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Rapid suppression of quantum many-body magnetic exciton in doped van der Waals antiferromagnet (Ni,Cd)PS3
Authors:
Junghyun Kim,
Woongki Na,
Jonghyeon Kim,
Pyeongjae Park,
Kaixuan Zhang,
Inho Hwang,
Young-Woo Son,
Jae Hoon Kim,
Hyeonsik Cheong,
Je-Geun Park
Abstract:
The unique discovery of magnetic exciton in van der Waals antiferromagnet NiPS3 arises between two quantum many-body states of a Zhang-Rice singlet excited state and a Zhang-Rice triplet ground state. Simultaneously, the spectral width of photoluminescence originating from this exciton is exceedingly narrow as 0.4 meV. These extraordinary properties, including the extreme coherence of the magnetic…
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The unique discovery of magnetic exciton in van der Waals antiferromagnet NiPS3 arises between two quantum many-body states of a Zhang-Rice singlet excited state and a Zhang-Rice triplet ground state. Simultaneously, the spectral width of photoluminescence originating from this exciton is exceedingly narrow as 0.4 meV. These extraordinary properties, including the extreme coherence of the magnetic exciton in NiPS3, beg many questions. We studied do** effects using Ni1-xCdxPS3 using two experimental techniques and theoretical studies. Our experimental results show that the magnetic exciton is drastically suppressed upon a few % Cd do**. All these happen while the width of the exciton only gradually increases, and the antiferromagnetic ground state is robust. These results highlight the lattice uniformity's hidden importance as a prerequisite for coherent magnetic exciton. Finally, an exciting scenario emerges: the broken charge transfer forbids the otherwise uniform formation of the coherent magnetic exciton in (Ni,Cd)PS3.
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Submitted 30 October, 2023;
originally announced October 2023.
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Scaling properties of induced density of chiral and non-chiral Dirac fermions in magnetic fields
Authors:
P. S. Park,
S. C. Kim,
S. -R. Eric Yang
Abstract:
We find that a repulsive potential of graphene in the presence of a magnetic field has bound states that are peaked inside the barrier with tails extending over \ell(N + 1), where \ell and N are the magnetic length and Landau level(LL) index. We have investigated how these bound states affect scaling properties of the induced density of filled Landau levels of massless Dirac fermions. For chiral f…
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We find that a repulsive potential of graphene in the presence of a magnetic field has bound states that are peaked inside the barrier with tails extending over \ell(N + 1), where \ell and N are the magnetic length and Landau level(LL) index. We have investigated how these bound states affect scaling properties of the induced density of filled Landau levels of massless Dirac fermions. For chiral fermions we find, in strong coupling regime, that the density inside the repulsive potential can be greater than the value in the absence of the potential while in the weak coupling regime we find negative induced density. Similar results hold also for non-chiral fermions. As one moves from weak to strong coupling regimes the effective coupling constant between the potential and electrons becomes more repulsive, and then it changes sign and becomes attractive. Different power-laws of induced density are found for chiral and non-chiral fermions.
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Submitted 24 August, 2011; v1 submitted 17 June, 2011;
originally announced June 2011.
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Polarization-engineered GaN/InGaN/GaN tunnel diodes
Authors:
Sriram Krishnamoorthy,
Digbijoy N. Nath,
Fatih Akyol,
Pil Sung Park,
Michele Esposto,
Siddharth Rajan
Abstract:
We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular be…
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We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.
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Submitted 24 August, 2010;
originally announced August 2010.
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Pum** in quantum dots and non-Abelian matrix Berry phases
Authors:
N. Y. Hwang,
S. C. Kim,
P. S. Park,
S. -R. Eric Yang
Abstract:
We have investigated pum** in quantum dots from the perspective of non-Abelian (matrix) Berry phases by solving the time dependent Schr{ö}dinger equation exactly for adiabatic changes. Our results demonstrate that a pumped charge is related to the presence of a finite matrix Berry phase. When consecutive adiabatic cycles are performed the pumped charge of each cycle is different from the previ…
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We have investigated pum** in quantum dots from the perspective of non-Abelian (matrix) Berry phases by solving the time dependent Schr{ö}dinger equation exactly for adiabatic changes. Our results demonstrate that a pumped charge is related to the presence of a finite matrix Berry phase. When consecutive adiabatic cycles are performed the pumped charge of each cycle is different from the previous ones.
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Submitted 14 February, 2008; v1 submitted 7 June, 2007;
originally announced June 2007.
