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Broadband Entangled-Photon Pair Generation with Integrated Photonics: Guidelines and A Materials Comparison
Authors:
Liao Duan,
Trevor J. Steiner,
Paolo Pintus,
Lillian Thiel,
Joshua E. Castro,
John E. Bowers,
Galan Moody
Abstract:
Correlated photon-pair sources are key components for quantum computing, networking, and sensing applications. Integrated photonics has enabled chip-scale sources using nonlinear processes, producing high-rate entanglement with sub-100 microwatt power at telecom wavelengths. Many quantum systems operate in the visible or near-infrared ranges, necessitating broadband visible-telecom entangled-pair…
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Correlated photon-pair sources are key components for quantum computing, networking, and sensing applications. Integrated photonics has enabled chip-scale sources using nonlinear processes, producing high-rate entanglement with sub-100 microwatt power at telecom wavelengths. Many quantum systems operate in the visible or near-infrared ranges, necessitating broadband visible-telecom entangled-pair sources for connecting remote systems via entanglement swap** and teleportation. This study evaluates broadband entanglement generation through spontaneous four-wave mixing in various nonlinear integrated photonic materials, including silicon nitride, lithium niobate, aluminum gallium arsenide, indium gallium phosphide, and gallium nitride. We demonstrate how geometric dispersion engineering facilitates phase-matching for each platform and reveals unexpected results, such as robust designs to fabrication variations and a Type-1 cross-polarized phase-matching condition for III-V materials that expands the operational bandwidth. With experimentally attainable parameters, integrated photonic microresonators with optimized designs can achieve pair generation rates greater than ~1 THz/mW$^2$.
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Submitted 5 July, 2024;
originally announced July 2024.
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Wafer-Scale Fabrication of InGaP-on-Insulator for Nonlinear and Quantum Photonic Applications
Authors:
Lillian Thiel,
Joshua E. Castro,
Trevor J. Steiner,
Catherine L. Nguyen,
Audrey Pechilis,
Liao Duan,
Nicholas Lewis,
Garrett D. Cole,
John E. Bowers,
Galan Moody
Abstract:
The development of manufacturable and scalable integrated nonlinear photonic materials is driving key technologies in diverse areas such as high-speed communications, signal processing, sensing, and quantum information. Here, we demonstrate a novel nonlinear platform -- InGaP-on-insulator -- optimized for visible-to-telecommunication wavelength $χ^{\left(2\right)}$ nonlinear optical processes. In…
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The development of manufacturable and scalable integrated nonlinear photonic materials is driving key technologies in diverse areas such as high-speed communications, signal processing, sensing, and quantum information. Here, we demonstrate a novel nonlinear platform -- InGaP-on-insulator -- optimized for visible-to-telecommunication wavelength $χ^{\left(2\right)}$ nonlinear optical processes. In this work, we detail our 100-mm wafer-scale InGaP-on-insulator fabrication process realized via wafer bonding, optical lithography, and dry-etching techniques. The resulting wafers yield 1000s of components in each fabrication cycle, with initial designs that include chip-to-fiber couplers, 12.5-cm-long nested spiral waveguides, and arrays of microring resonators with free-spectral ranges spanning 400-900 GHz. We demonstrate intrinsic resonator quality factors as high as 324,000 (440,000) for single-resonance (split-resonance) modes near 1550 nm corresponding to 1.56 dB cm$^{-1}$ (1.22 dB cm$^{-1}$) propagation loss. We analyze the loss versus waveguide width and resonator radius to establish the operating regime for optimal 775-to-1550 nm phase matching. By combining the high $χ^{\left(2\right)}$ and $χ^{\left(3\right)}$ optical nonlinearity of InGaP with wafer-scale fabrication and low propagation loss, these results open promising possibilities for entangled-photon, multi-photon, and squeezed light generation.
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Submitted 26 June, 2024;
originally announced June 2024.
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Continuous Entanglement Distribution from an AlGaAs-on-Insulator Microcomb for Quantum Communications
Authors:
Trevor J. Steiner,
Maximilian Shen,
Joshua E. Castro,
John E. Bowers,
Galan Moody
Abstract:
Using an aluminum gallium arsenide microring resonator, we demonstrate a bright quantum optical microcomb with $>300$ nm bandwidth and more than 20 sets of time-energy entangled modes, enabling spectral demultiplexing with simple, off-the-shelf commercial telecom components. We report high-rate continuous entanglement distribution for two sets of entangled-photon pair frequency modes exhibiting up…
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Using an aluminum gallium arsenide microring resonator, we demonstrate a bright quantum optical microcomb with $>300$ nm bandwidth and more than 20 sets of time-energy entangled modes, enabling spectral demultiplexing with simple, off-the-shelf commercial telecom components. We report high-rate continuous entanglement distribution for two sets of entangled-photon pair frequency modes exhibiting up to $20$ GHz/mW$^2$ pair generation rate. As an illustrative example of entanglement distribution, we perform a continuous-wave time-bin quantum key distribution protocol with 8 kbps raw key rates while maintaining less than 10$\%$ error rate and sufficient two-photon visibility to ensure security of the channel. When the $>$20 frequency modes are multiplexed, we estimate $>$100 kbps entanglement-based key rates or the creation of a multi-user quantum communications network. The entire system requires less than 110 $μ$W of on-chip optical power, demonstrating an efficient source of entangled frequency modes for quantum communications. As a proof of principle, a quantum key is distributed across 12 km of deployed fiber on the UCSB campus and used to transmit a 21 kB image with $<9\%$ error.
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Submitted 21 October, 2023;
originally announced October 2023.
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Heterogeneous integration of superconducting thin films and epitaxial semiconductor heterostructures with Lithium Niobate
Authors:
Michelle Lienhart,
Michael Choquer,
Emeline D. S. Nysten,
Matthias Weiß,
Kai Müller,
Jonathan J. Finley,
Galan Moody,
Hubert J. Krenner
Abstract:
We report on scalable heterointegration of superconducting electrodes and epitaxial semiconductor quantum dots on strong piezoelectric and optically nonlinear lithium niobate. The implemented processes combine the sputter-deposited thin film superconductor niobium nitride and III-V compound semiconductor membranes onto the host substrate. The superconducting thin film is employed as a zero-resisti…
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We report on scalable heterointegration of superconducting electrodes and epitaxial semiconductor quantum dots on strong piezoelectric and optically nonlinear lithium niobate. The implemented processes combine the sputter-deposited thin film superconductor niobium nitride and III-V compound semiconductor membranes onto the host substrate. The superconducting thin film is employed as a zero-resistivity electrode material for a surface acoustic wave resonator with internal quality factors $Q \approx 17000$ representing a three-fold enhancement compared to identical devices with normal conducting electrodes. Superconducting operation of $\approx 400\,\mathrm{MHz}$ resonators is achieved to temperatures $T>7\,\mathrm{K}$ and electrical radio frequency powers $P_{\mathrm{rf}}>+9\,\mathrm{dBm}$. Heterogeneously integrated single quantum dots couple to the resonant phononic field of the surface acoustic wave resonator operated in the superconducting regime. Position and frequency selective coupling mediated by deformation potential coupling is validated using time-integrated and time-resolved optical spectroscopy. Furthermore, acoustoelectric charge state control is achieved in a modified device geometry harnessing large piezoelectric fields inside the resonator. The hybrid quantum dot - surface acoustic wave resonator can be scaled to higher operation frequencies and smaller mode volumes for quantum phase modulation and transduction between photons and phonons via the quantum dot. Finally, the employed materials allow for the realization of other types of optoelectronic devices, including superconducting single photon detectors and integrated photonic and phononic circuits.
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Submitted 30 April, 2023; v1 submitted 6 February, 2023;
originally announced February 2023.
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Surface Acoustic Wave Cavity Optomechanics with WSe$_2$ Single Photon Emitters
Authors:
Sahil D. Patel,
Kamyar Parto,
Michael Choquer,
Sammy Umezawa,
Landon Hellman,
Daniella Polishchuk,
Galan Moody
Abstract:
Surface acoustic waves (SAWs) are a versatile tool for coherently interfacing with a variety of solid-state quantum systems spanning microwave to optical frequencies, including superconducting qubits, spins, and quantum emitters. Here, we demonstrate SAW cavity optomechanics with quantum emitters in 2D materials, specifically monolayer WSe$_2$, on a planar lithium niobate SAW resonator driven by s…
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Surface acoustic waves (SAWs) are a versatile tool for coherently interfacing with a variety of solid-state quantum systems spanning microwave to optical frequencies, including superconducting qubits, spins, and quantum emitters. Here, we demonstrate SAW cavity optomechanics with quantum emitters in 2D materials, specifically monolayer WSe$_2$, on a planar lithium niobate SAW resonator driven by superconducting electronics. Using steady-state photoluminescence spectroscopy and time-resolved single-photon counting, we map the temporal dynamics of modulated 2D emitters under coupling to different SAW cavity modes, showing energy-level splitting consistent with deformation potential coupling of 30 meV/%. We leverage the large anisotropic strain from the SAW to modulate the excitonic fine-structure splitting on a nanosecond timescale, which may find applications for on-demand entangled photon-pair generation from 2D materials. Cavity optomechanics with SAWs and 2D quantum emitters provides opportunities for compact sensors and quantum electro-optomechanics in a multi-functional integrated platform that combines phononic, optical, and superconducting electronic quantum systems.
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Submitted 28 November, 2022;
originally announced November 2022.
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Cavity-Enhanced 2D Material Quantum Emitters Deterministically Integrated with Silicon Nitride Microresonators
Authors:
Kamyar Parto,
Shaimaa I. Azzam,
Nicholas Lewis,
Sahil D. Patel,
Sammy Umezawa,
Kenji Watanabe,
Takashi Taniguchi,
Galan Moody
Abstract:
Optically active defects in 2D materials, such as hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDs), are an attractive class of single-photon emitters with high brightness, room-temperature operation, site-specific engineering of emitter arrays, and tunability with external strain and electric fields. In this work, we demonstrate a novel approach to precisely align and embe…
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Optically active defects in 2D materials, such as hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDs), are an attractive class of single-photon emitters with high brightness, room-temperature operation, site-specific engineering of emitter arrays, and tunability with external strain and electric fields. In this work, we demonstrate a novel approach to precisely align and embed hBN and TMDs within background-free silicon nitride microring resonators. Through the Purcell effect, high-purity hBN emitters exhibit a cavity-enhanced spectral coupling efficiency up to $46\%$ at room temperature, which exceeds the theoretical limit for cavity-free waveguide-emitter coupling and previous demonstrations by nearly an order-of-magnitude. The devices are fabricated with a CMOS-compatible process and exhibit no degradation of the 2D material optical properties, robustness to thermal annealing, and 100 nm positioning accuracy of quantum emitters within single-mode waveguides, opening a path for scalable quantum photonic chips with on-demand single-photon sources.
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Submitted 29 June, 2022;
originally announced June 2022.
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Expanding the Quantum Photonic Toolbox in AlGaAsOI
Authors:
Joshua E. Castro,
Trevor J. Steiner,
Lillian Thiel,
Alex Dinkelacker,
Corey McDonald,
Paolo Pintus,
Lin Chang,
John E. Bowers,
Galan Moody
Abstract:
Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large $χ^\left(2\right)$ and $χ^\left(3\right)$ optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it an exciting platform for integrated quantum photonics. With ultrabright sources of quantum light established in AlGaAsOI, the next step is to develop the critical bu…
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Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large $χ^\left(2\right)$ and $χ^\left(3\right)$ optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it an exciting platform for integrated quantum photonics. With ultrabright sources of quantum light established in AlGaAsOI, the next step is to develop the critical building blocks for chip-scale quantum photonic circuits. Here we expand the quantum photonic toolbox for AlGaAsOI by demonstrating edge couplers, 3-dB splitters, tunable interferometers, and waveguide crossings with performance comparable to or exceeding silicon and silicon-nitride quantum photonic platforms. As a demonstration, we demultiplex photonic qubits through an unbalanced interferometer, paving the route toward ultra-efficient and high-rate chip-scale demonstrations of photonic quantum computation and information applications.
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Submitted 13 May, 2022;
originally announced May 2022.
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Roadmap on Integrated Quantum Photonics
Authors:
Galan Moody,
Volker J. Sorger,
Daniel J. Blumenthal,
Paul W. Juodawlkis,
William Loh,
Cheryl Sorace-Agaskar,
Alex E. Jones,
Krishna C. Balram,
Jonathan C. F. Matthews,
Anthony Laing,
Marcelo Davanco,
Lin Chang,
John E. Bowers,
Niels Quack,
Christophe Galland,
Igor Aharonovich,
Martin A. Wolff,
Carsten Schuck,
Neil Sinclair,
Marko Lončar,
Tin Komljenovic,
David Weld,
Shayan Mookherjea,
Sonia Buckley,
Marina Radulaski
, et al. (30 additional authors not shown)
Abstract:
Integrated photonics is at the heart of many classical technologies, from optical communications to biosensors, LIDAR, and data center fiber interconnects. There is strong evidence that these integrated technologies will play a key role in quantum systems as they grow from few-qubit prototypes to tens of thousands of qubits. The underlying laser and optical quantum technologies, with the required…
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Integrated photonics is at the heart of many classical technologies, from optical communications to biosensors, LIDAR, and data center fiber interconnects. There is strong evidence that these integrated technologies will play a key role in quantum systems as they grow from few-qubit prototypes to tens of thousands of qubits. The underlying laser and optical quantum technologies, with the required functionality and performance, can only be realized through the integration of these components onto quantum photonic integrated circuits (QPICs) with accompanying electronics. In the last decade, remarkable advances in quantum photonic integration and a dramatic reduction in optical losses have enabled benchtop experiments to be scaled down to prototype chips with improvements in efficiency, robustness, and key performance metrics. The reduction in size, weight, power, and improvement in stability that will be enabled by QPICs will play a key role in increasing the degree of complexity and scale in quantum demonstrations. In the next decade, with sustained research, development, and investment in the quantum photonic ecosystem (i.e. PIC-based platforms, devices and circuits, fabrication and integration processes, packaging, and testing and benchmarking), we will witness the transition from single- and few-function prototypes to the large-scale integration of multi-functional and reconfigurable QPICs that will define how information is processed, stored, transmitted, and utilized for quantum computing, communications, metrology, and sensing. This roadmap highlights the current progress in the field of integrated quantum photonics, future challenges, and advances in science and technology needed to meet these challenges.
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Submitted 22 September, 2021; v1 submitted 5 February, 2021;
originally announced February 2021.
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Ultra-bright entangled-photon pair generation from an AlGaAs-on-insulator microring resonator
Authors:
Trevor J. Steiner,
Joshua E. Castro,
Lin Chang,
Quynh Dang,
Weiqiang Xie,
Justin Norman,
John E. Bowers,
Galan Moody
Abstract:
Entangled-photon pairs are an essential resource for quantum information technologies. Chip-scale sources of entangled pairs have been integrated with various photonic platforms, including silicon, nitrides, indium phosphide, and lithium niobate, but each has fundamental limitations that restrict the photon-pair brightness and quality, including weak optical nonlinearity or high waveguide loss. He…
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Entangled-photon pairs are an essential resource for quantum information technologies. Chip-scale sources of entangled pairs have been integrated with various photonic platforms, including silicon, nitrides, indium phosphide, and lithium niobate, but each has fundamental limitations that restrict the photon-pair brightness and quality, including weak optical nonlinearity or high waveguide loss. Here, we demonstrate a novel, ultra-low-loss AlGaAs-on-insulator platform capable of generating time-energy entangled photons in a $Q$ $>1$ million microring resonator with nearly 1,000-fold improvement in brightness compared to existing sources. The waveguide-integrated source exhibits an internal generation rate greater than $20\times 10^9$ pairs sec$^{-1}$ mW$^{-2}$, emits near 1550 nm, produces heralded single photons with $>99\%$ purity, and violates Bell's inequality by more than 40 standard deviations with visibility $>97\%$. Combined with the high optical nonlinearity and optical gain of AlGaAs for active component integration, these are all essential features for a scalable quantum photonic platform.
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Submitted 28 September, 2020;
originally announced September 2020.
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Irradiation of Nanostrained Monolayer WSe$_2$ for Site-Controlled Single-Photon Emission up to 150 K
Authors:
Kamyar Parto,
Kaustav Banerjee,
Galan Moody
Abstract:
Quantum-dot-like WSe$_2$ single-photon emitters have become a promising platform for future on-chip scalable quantum light sources with unique advantages over existing technologies, notably the potential for site-specific engineering. However, the required cryogenic temperatures for the functionality of these sources have been an inhibitor of their full potential. Existing strain engineering metho…
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Quantum-dot-like WSe$_2$ single-photon emitters have become a promising platform for future on-chip scalable quantum light sources with unique advantages over existing technologies, notably the potential for site-specific engineering. However, the required cryogenic temperatures for the functionality of these sources have been an inhibitor of their full potential. Existing strain engineering methods face fundamental challenges in extending the working temperature while maintaining the emitter's fabrication yield and purity. In this work, we demonstrate a novel method of designing site-specific single-photon emitters in atomically thin WSe$_2$ with near-unity yield utilizing independent and simultaneous strain engineering via nanoscale stressors and defect engineering via electron-beam irradiation. Many of these emitters exhibit exciton-biexciton cascaded emission, purities above 95%, and working temperatures extending up to 150 K, which is the highest observed in van der Waals semiconductor single-photon emitters without Purcell enhancement. This methodology, coupled with possible plasmonic or optical micro-cavity integration, potentially furthers the realization of future scalable, room-temperature, and high-quality van der Waals quantum light sources.
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Submitted 15 September, 2020;
originally announced September 2020.
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Demonstrating sub-3 ps temporal resolution in a superconducting nanowire single-photon detector
Authors:
B. A. Korzh,
Q-Y. Zhao,
S. Frasca,
J. P. Allmaras,
T. M. Autry,
E. A. Bersin,
M. Colangelo,
G. M. Crouch,
A. E. Dane,
T. Gerrits,
F. Marsili,
G. Moody,
E. Ramirez,
J. D. Rezac,
M. J. Stevens,
E. E. Wollman,
D. Zhu,
P. D. Hale,
K. L. Silverman,
R. P. Mirin,
S. W. Nam,
M. D. Shaw,
K. K. Berggren
Abstract:
Improving the temporal resolution of single photon detectors has an impact on many applications, such as increased data rates and transmission distances for both classical and quantum optical communication systems, higher spatial resolution in laser ranging and observation of shorter-lived fluorophores in biomedical imaging. In recent years, superconducting nanowire single-photon detectors (SNSPDs…
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Improving the temporal resolution of single photon detectors has an impact on many applications, such as increased data rates and transmission distances for both classical and quantum optical communication systems, higher spatial resolution in laser ranging and observation of shorter-lived fluorophores in biomedical imaging. In recent years, superconducting nanowire single-photon detectors (SNSPDs) have emerged as the highest efficiency time-resolving single-photon counting detectors available in the near infrared. As the detection mechanism in SNSPDs occurs on picosecond time scales, SNSPDs have been demonstrated with exquisite temporal resolution below 15 ps. We reduce this value to 2.7$\pm$0.2 ps at 400 nm and 4.6$\pm$0.2 ps at 1550 nm, using a specialized niobium nitride (NbN) SNSPD. The observed photon-energy dependence of the temporal resolution and detection latency suggests that intrinsic effects make a significant contribution.
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Submitted 18 April, 2018;
originally announced April 2018.