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Control of threshold voltages in Si/SiGe quantum devices via optical illumination
Authors:
M. A. Wolfe,
Brighton X. Coe,
Justin S. Edwards,
Tyler J. Kovach,
Thomas McJunkin,
Benjamin Harpt,
D. E. Savage,
M. G. Lagally,
R. McDermott,
Mark Friesen,
Shimon Kolkowitz,
M. A. Eriksson
Abstract:
Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic threshold voltage shifts in a dopant-free, Si/SiGe field effect transistor using a near infrared (780 nm) laser diode. We find that illumination under an applied gate v…
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Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic threshold voltage shifts in a dopant-free, Si/SiGe field effect transistor using a near infrared (780 nm) laser diode. We find that illumination under an applied gate voltage can be used to set a specific, stable, and reproducible threshold voltage that, over a wide range in gate bias, is equal to that gate bias. Outside this range, the threshold voltage can still be tuned, although the resulting threshold voltage is no longer equal to the applied gate bias during illumination. We present a simple and intuitive model that provides a mechanism for the tunability in gate bias. The model presented also explains why cryogenic illumination is successful at resetting quantum dot qubit devices after undesired charging events.
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Submitted 20 June, 2024; v1 submitted 21 December, 2023;
originally announced December 2023.
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Latched readout for the quantum dot hybrid qubit
Authors:
J. Corrigan,
J. P. Dodson,
Brandur Thorgrimsson,
Samuel F. Neyens,
T. J. Knapp,
Thomas McJunkin,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
A primary method of reading out a quantum dot hybrid qubit involves projection of the logical basis onto distinct charge states that are readily detected by an integrated charge sensing dot. However, in the simplest configuration, the excited charge state decays rapidly, making single-shot readout challenging. Here, we demonstrate a readout procedure where the qubit excited state is latched to a m…
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A primary method of reading out a quantum dot hybrid qubit involves projection of the logical basis onto distinct charge states that are readily detected by an integrated charge sensing dot. However, in the simplest configuration, the excited charge state decays rapidly, making single-shot readout challenging. Here, we demonstrate a readout procedure where the qubit excited state is latched to a metastable charge configuration whose lifetime is tunnel rate limited, persisting here as long as 2.5 ms. Additionally, we show that working in the (4,1)-(3,2) charge configuration enables a latched readout window that is larger and more tunable than typical charge configurations, because the size of the readout window is determined by an orbital splitting rather than a valley splitting.
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Submitted 15 October, 2022;
originally announced October 2022.
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SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits
Authors:
Thomas McJunkin,
Benjamin Harpt,
Yi Feng,
Merritt P. Losert,
Rajib Rahman,
J. P. Dodson,
M. A. Wolfe,
D. E. Savage,
M. G. Lagally,
S. N. Coppersmith,
Mark Friesen,
Robert Joynt,
M. A. Eriksson
Abstract:
Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new hete…
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Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new heterostructure, the "Wiggle Well," whose key feature is Ge concentration oscillations inside the quantum well. Experimentally, we show that placing Ge in the quantum well does not significantly impact our ability to form and manipulate single-electron quantum dots. We further observe large and widely tunable valley splittings, from 54 to 239 ueV. Tight-binding calculations, and the tunability of the valley splitting, indicate that these results can mainly be attributed to random concentration fluctuations that are amplified by the presence of Ge alloy in the heterostructure, as opposed to a deterministic enhancement due to the concentration oscillations. Quantitative predictions for several other heterostructures point to the Wiggle Well as a robust method for reliably enhancing the valley splitting in future qubit devices.
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Submitted 15 December, 2022; v1 submitted 17 December, 2021;
originally announced December 2021.
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Toward Robust Autotuning of Noisy Quantum Dot Devices
Authors:
Joshua Ziegler,
Thomas McJunkin,
E. S. Joseph,
Sandesh S. Kalantre,
Benjamin Harpt,
D. E. Savage,
M. G. Lagally,
M. A. Eriksson,
Jacob M. Taylor,
Justyna P. Zwolak
Abstract:
The current autotuning approaches for quantum dot (QD) devices, while showing some success, lack an assessment of data reliability. This leads to unexpected failures when noisy or otherwise low-quality data is processed by an autonomous system. In this work, we propose a framework for robust autotuning of QD devices that combines a machine learning (ML) state classifier with a data quality control…
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The current autotuning approaches for quantum dot (QD) devices, while showing some success, lack an assessment of data reliability. This leads to unexpected failures when noisy or otherwise low-quality data is processed by an autonomous system. In this work, we propose a framework for robust autotuning of QD devices that combines a machine learning (ML) state classifier with a data quality control module. The data quality control module acts as a "gatekeeper" system, ensuring that only reliable data are processed by the state classifier. Lower data quality results in either device recalibration or termination. To train both ML systems, we enhance the QD simulation by incorporating synthetic noise typical of QD experiments. We confirm that the inclusion of synthetic noise in the training of the state classifier significantly improves the performance, resulting in an accuracy of 95.0(9) % when tested on experimental data. We then validate the functionality of the data quality control module by showing that the state classifier performance deteriorates with decreasing data quality, as expected. Our results establish a robust and flexible ML framework for autonomous tuning of noisy QD devices.
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Submitted 8 September, 2022; v1 submitted 30 July, 2021;
originally announced August 2021.
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Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well
Authors:
Thomas McJunkin,
E. R. MacQuarrie,
Leah Tom,
S. F. Neyens,
J. P. Dodson,
Brandur Thorgrimsson,
J. Corrigan,
H. Ekmel Ercan,
D. E. Savage,
M. G. Lagally,
Robert Joynt,
S. N. Coppersmith,
Mark Friesen,
M. A. Eriksson
Abstract:
Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure i…
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Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure is grown by chemical vapor deposition and magnetospectroscopy is performed on gate-defined quantum dots to measure the excited state spectrum. We demonstrate a large and widely tunable valley splitting as a function of applied vertical electric field and lateral dot confinement. We further investigate the role of the germanium spike by means of tight-binding simulations in single-electron dots and show a robust doubling of the valley splitting when the spike is present, as compared to a standard (spike-free) heterostructure. This doubling effect is nearly independent of the electric field, germanium content of the spike, and spike location. This experimental evidence of a stable, tunable quantum dot, despite a drastic change to the heterostructure, provides a foundation for future heterostructure modifications.
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Submitted 16 April, 2021;
originally announced April 2021.
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How valley-orbit states in silicon quantum dots probe quantum well interfaces
Authors:
J. P. Dodson,
H. Ekmel Ercan,
J. Corrigan,
Merritt Losert,
Nathan Holman,
Thomas McJunkin,
L. F. Edge,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration int…
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The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration interaction calculations. The results enable an understanding of the interplay between the physical contributions and enable a new probe of the quantum well interface.
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Submitted 6 April, 2022; v1 submitted 26 March, 2021;
originally announced March 2021.
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Ray-based framework for state identification in quantum dot devices
Authors:
Justyna P. Zwolak,
Thomas McJunkin,
Sandesh S. Kalantre,
Samuel F. Neyens,
E. R. MacQuarrie,
Mark A. Eriksson,
Jacob M. Taylor
Abstract:
Quantum dots (QDs) defined with electrostatic gates are a leading platform for a scalable quantum computing implementation. However, with increasing numbers of qubits, the complexity of the control parameter space also grows. Traditional measurement techniques, relying on complete or near-complete exploration via two-parameter scans (images) of the device response, quickly become impractical with…
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Quantum dots (QDs) defined with electrostatic gates are a leading platform for a scalable quantum computing implementation. However, with increasing numbers of qubits, the complexity of the control parameter space also grows. Traditional measurement techniques, relying on complete or near-complete exploration via two-parameter scans (images) of the device response, quickly become impractical with increasing numbers of gates. Here we propose to circumvent this challenge by introducing a measurement technique relying on one-dimensional projections of the device response in the multidimensional parameter space. Dubbed the ``ray-based classification (RBC) framework,'' we use this machine learning approach to implement a classifier for QD states, enabling automated recognition of qubit-relevant parameter regimes. We show that RBC surpasses the 82 % accuracy benchmark from the experimental implementation of image-based classification techniques from prior work while reducing the number of measurement points needed by up to 70 %. The reduction in measurement cost is a significant gain for time-intensive QD measurements and is a step forward toward the scalability of these devices. We also discuss how the RBC-based optimizer, which tunes the device to a multiqubit regime, performs when tuning in the two-dimensional and three-dimensional parameter spaces defined by plunger and barrier gates that control the QDs.This work provides experimental validation of both efficient state identification and optimization with machine learning techniques for non-traditional measurements in quantum systems with high-dimensional parameter spaces and time-intensive measurements.
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Submitted 17 June, 2021; v1 submitted 23 February, 2021;
originally announced February 2021.
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Radio frequency reflectometry in silicon-based quantum dots
Authors:
Y. -Y. Liu,
S. G. J. Philips,
L. A. Orona,
N. Samkharadze,
T. McJunkin,
E. R. MacQuarrie,
M. A. Eriksson,
L. M. K. Vandersypen,
A. Yacoby
Abstract:
RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a se…
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RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that these methods enable high-performance charge readout in Si/SiGe quantum dots, achieving a fidelity of 99.9% for a measurement time of 1 $μ$s.
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Submitted 6 January, 2021; v1 submitted 28 December, 2020;
originally announced December 2020.
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Ray-based classification framework for high-dimensional data
Authors:
Justyna P. Zwolak,
Sandesh S. Kalantre,
Thomas McJunkin,
Brian J. Weber,
Jacob M. Taylor
Abstract:
While classification of arbitrary structures in high dimensions may require complete quantitative information, for simple geometrical structures, low-dimensional qualitative information about the boundaries defining the structures can suffice. Rather than using dense, multi-dimensional data, we propose a deep neural network (DNN) classification framework that utilizes a minimal collection of one-d…
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While classification of arbitrary structures in high dimensions may require complete quantitative information, for simple geometrical structures, low-dimensional qualitative information about the boundaries defining the structures can suffice. Rather than using dense, multi-dimensional data, we propose a deep neural network (DNN) classification framework that utilizes a minimal collection of one-dimensional representations, called \emph{rays}, to construct the "fingerprint" of the structure(s) based on substantially reduced information. We empirically study this framework using a synthetic dataset of double and triple quantum dot devices and apply it to the classification problem of identifying the device state. We show that the performance of the ray-based classifier is already on par with traditional 2D images for low dimensional systems, while significantly cutting down the data acquisition cost.
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Submitted 26 February, 2022; v1 submitted 1 October, 2020;
originally announced October 2020.
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Coherent control and spectroscopy of a semiconductor quantum dot Wigner molecule
Authors:
J. Corrigan,
J. P. Dodson,
H. Ekmel Ercan,
J. C. Abadillo-Uriel,
Brandur Thorgrimsson,
T. J. Knapp,
Nathan Holman,
Thomas McJunkin,
Samuel F. Neyens,
E. R. MacQuarrie,
Ryan H. Foote,
L. F. Edge,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such control in the strongly interacting regime has not been realized. Here we report quantum control of eight different resonances in a silicon-based quantum do…
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Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such control in the strongly interacting regime has not been realized. Here we report quantum control of eight different resonances in a silicon-based quantum dot. We use qubit readout to perform spectroscopy, revealing a dense set of energy levels with characteristic spacing far smaller than the single-particle energy. By comparing with full configuration interaction calculations, we argue that the dense set of levels arises from Wigner-molecule physics.
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Submitted 28 September, 2020;
originally announced September 2020.
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Fabrication process and failure analysis for robust quantum dots in silicon
Authors:
J. P. Dodson,
Nathan Holman,
Brandur Thorgrimsson,
Samuel F. Neyens,
E. R. MacQuarrie,
Thomas McJunkin,
Ryan H. Foote,
L. F. Edge,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
We present an improved fabrication process for overlap** aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic discharge (ESD) protection, and an optimized interconnect process for thermal budget considerations. This process reduces gate-to-gate leakage, damage from ESD, dewetti…
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We present an improved fabrication process for overlap** aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic discharge (ESD) protection, and an optimized interconnect process for thermal budget considerations. This process reduces gate-to-gate leakage, damage from ESD, dewetting of aluminum, and formation of undesired alloys in device interconnects. Additionally, cross-sectional scanning transmission electron microscopy (STEM) images elucidate gate electrode morphology in the active region as device geometry is varied. We show that overlap** aluminum gate layers homogeneously conform to the topology beneath them, independent of gate geometry, and identify critical dimensions in the gate geometry where pattern transfer becomes non-ideal, causing device failure.
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Submitted 15 September, 2020; v1 submitted 12 April, 2020;
originally announced April 2020.
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Auto-tuning of double dot devices in situ with machine learning
Authors:
Justyna P. Zwolak,
Thomas McJunkin,
Sandesh S. Kalantre,
J. P. Dodson,
E. R. MacQuarrie,
D. E. Savage,
M. G. Lagally,
S. N. Coppersmith,
Mark A. Eriksson,
Jacob M. Taylor
Abstract:
The current practice of manually tuning quantum dots (QDs) for qubit operation is a relatively time-consuming procedure that is inherently impractical for scaling up and applications. In this work, we report on the {\it in situ} implementation of a recently proposed autotuning protocol that combines machine learning (ML) with an optimization routine to navigate the parameter space. In particular,…
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The current practice of manually tuning quantum dots (QDs) for qubit operation is a relatively time-consuming procedure that is inherently impractical for scaling up and applications. In this work, we report on the {\it in situ} implementation of a recently proposed autotuning protocol that combines machine learning (ML) with an optimization routine to navigate the parameter space. In particular, we show that a ML algorithm trained using exclusively simulated data to quantitatively classify the state of a double-QD device can be used to replace human heuristics in the tuning of gate voltages in real devices. We demonstrate active feedback of a functional double-dot device operated at millikelvin temperatures and discuss success rates as a function of the initial conditions and the device performance. Modifications to the training network, fitness function, and optimizer are discussed as a path toward further improvement in the success rate when starting both near and far detuned from the target double-dot range.
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Submitted 1 April, 2020; v1 submitted 17 September, 2019;
originally announced September 2019.
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Measurements of capacitive coupling within a quadruple quantum dot array
Authors:
Samuel F. Neyens,
E. R. MacQuarrie,
J. P. Dodson,
J. Corrigan,
Nathan Holman,
Brandur Thorgrimsson,
M. Palma,
Thomas McJunkin,
L. F. Edge,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regime of strong ($>$1 GHz) intra-double dot tunnel coupling, as is typical for double dot qubits, we measure a capacitive coupling energy of $20.9 \pm 0.3$ GHz. In this regime, we demonstrate a fitting procedure to extract…
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We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regime of strong ($>$1 GHz) intra-double dot tunnel coupling, as is typical for double dot qubits, we measure a capacitive coupling energy of $20.9 \pm 0.3$ GHz. In this regime, we demonstrate a fitting procedure to extract all the parameters in the 4D Hamiltonian for two capacitively coupled charge qubits from a 2D slice through the quadruple dot charge stability diagram. We also investigate the tunability of the capacitive coupling energy, using inter-dot barrier gate voltages to tune the inter- and intra-double dot capacitances, and change the capacitive coupling energy of the double dots over a range of 15-32 GHz. We provide a model for the capacitive coupling energy based on the electrostatics of a network of charge nodes joined by capacitors, which shows how the coupling energy should depend on inter-double dot and intra-double dot capacitances in the network, and find that the expected trends agree well with the measurements of coupling energy.
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Submitted 18 July, 2019;
originally announced July 2019.
