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Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells
Authors:
Will J. Hardy,
C. Thomas Harris,
Yi-Hsin Su,
Yen Chuang,
Jonathan Moussa,
Leon N. Maurer,
Jiun-Yun Li,
Tzu-Ming Lu,
Dwight R. Luhman
Abstract:
Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit control, longer coherence times, and improved extensibility. Recent advances in heterostructure material growth have opened new possibilities for employing hole sp…
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Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit control, longer coherence times, and improved extensibility. Recent advances in heterostructure material growth have opened new possibilities for employing hole spins in semiconductors for qubit applications. Undoped, strained Ge/SiGe quantum wells are promising candidate hosts for hole spin-based qubits due to their low disorder, large intrinsic spin-orbit coupling strength, and absence of valley states. Here, we use a simple one-layer gated device structure to demonstrate both a single quantum dot as well as coupling between two adjacent quantum dots. The hole effective mass in these undoped structures, $m$* ~ 0.08 $m$$_0$, is significantly lower than for electrons in Si/SiGe, pointing to the possibility of enhanced tunnel couplings in quantum dots and favorable qubit-qubit interactions in an industry-compatible semiconductor platform.
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Submitted 18 March, 2019; v1 submitted 21 August, 2018;
originally announced August 2018.
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Valley splitting of single-electron Si MOS quantum dots
Authors:
John King Gamble,
Patrick Harvey-Collard,
N. Tobias Jacobson,
Andrew D. Baczewski,
Erik Nielsen,
Leon Maurer,
Inès Montaño,
Martin Rudolph,
M. S. Carroll,
C. H. Yang,
A. Rossi,
A. S. Dzurak,
Richard P. Muller
Abstract:
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory rem…
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Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from a new experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both the new experiment and a recently reported one. Through sampling millions of realistic cases of interface roughness, our method provides evidence that, despite radically different processing, the valley physics between the two samples is essentially the same. This work provides the first evidence that valley splitting can be deterministically predicted and controlled in metal oxide semiconductor quantum dots, a critical requirement for such systems to realize a reliable qubit platform.
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Submitted 11 October, 2016;
originally announced October 2016.
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Microwave Photon Counter Based on Josephson Junctions
Authors:
Y. -F. Chen,
D. Hover,
S. Sendelbach,
L. Maurer,
S. T. Merkel,
E. J. Pritchett,
F. K. Wilhelm,
R. McDermott
Abstract:
We describe a microwave photon counter based on the current-biased Josephson junction. The junction is tuned to absorb single microwave photons from the incident field, after which it tunnels into a classically observable voltage state. Using two such detectors, we have performed a microwave version of the Hanbury Brown and Twiss experiment at 4 GHz and demonstrated a clear signature of photon bun…
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We describe a microwave photon counter based on the current-biased Josephson junction. The junction is tuned to absorb single microwave photons from the incident field, after which it tunnels into a classically observable voltage state. Using two such detectors, we have performed a microwave version of the Hanbury Brown and Twiss experiment at 4 GHz and demonstrated a clear signature of photon bunching for a thermal source. The design is readily scalable to tens of parallelized junctions, a configuration that would allow number-resolved counting of microwave photons.
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Submitted 7 November, 2011; v1 submitted 18 November, 2010;
originally announced November 2010.
