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arXiv:2102.02644
[pdf]
cond-mat.mes-hall
cond-mat.mtrl-sci
cond-mat.str-el
cond-mat.supr-con
quant-ph
The 2021 Quantum Materials Roadmap
Authors:
Feliciano Giustino,
** Hong Lee,
Felix Trier,
Manuel Bibes,
Stephen M Winter,
Roser Valentí,
Young-Woo Son,
Louis Taillefer,
Christoph Heil,
Adriana I. Figueroa,
Bernard Plaçais,
QuanSheng Wu,
Oleg V. Yazyev,
Erik P. A. M. Bakkers,
Jesper Nygård,
Pol Forn-Diaz,
Silvano De Franceschi,
J. W. McIver,
L. E. F. Foa Torres,
Tony Low,
Anshuman Kumar,
Regina Galceran,
Sergio O. Valenzuela,
Marius V. Costache,
Aurélien Manchon
, et al. (4 additional authors not shown)
Abstract:
In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topologi…
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In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to sha** a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry.
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Submitted 4 February, 2021;
originally announced February 2021.
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Pum** electrons in graphene to the $\mathbf{M}$-point in the Brillouin zone: The emergence of anisotropic plasmons
Authors:
A. J. Chaves,
N. M. R. Peres,
Tony Low
Abstract:
We consider the existence of plasmons in a non-equilibrium situation where electrons from the valence band of graphene are pumped to states in the Brillouin zone around the $\mathbf{M}$-point by a high intensity UV electromagnetic field. The resulting out-of-equilibrium electron gas is later probed by a weak electromagnetic field of different frequency. We show that the optical properties of the s…
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We consider the existence of plasmons in a non-equilibrium situation where electrons from the valence band of graphene are pumped to states in the Brillouin zone around the $\mathbf{M}$-point by a high intensity UV electromagnetic field. The resulting out-of-equilibrium electron gas is later probed by a weak electromagnetic field of different frequency. We show that the optical properties of the system and the dispersion of the plasmons are strongly anisotropic, depending on the pum** radiation properties: its intensity, polarization, and frequency. This anisotropy has its roots in the saddle-like nature of the electronic dispersion relation around that particular point in the Brillouin zone.
It is found that despite the strong anisotropy, the dispersion of the plasmons scales with the square root of the wave number but is characterized an effective Fermi energy, which depends on the properties of the pum** radiation. Our calculations go beyond the usual Dirac cone approximation taking the full band structure of graphene into account. This is a necessary condition for discussing plasmons at the $\mathbf{M}$-point in the Brillouin zone.
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Submitted 1 October, 2016;
originally announced October 2016.
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Quantum behavior of graphene transistors near the scaling limit
Authors:
Yanqing Wu,
Vasili Perebeinos,
Yu-ming Lin,
Tony Low,
Fengnian Xia,
Phaedon Avouris
Abstract:
The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective electron cavity, which can form the basis for new quantum devices. In previous studies, quantum interference effects were demonstrated in graphene heterojunction…
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The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective electron cavity, which can form the basis for new quantum devices. In previous studies, quantum interference effects were demonstrated in graphene heterojunctions formed by a top gate. Here phase coherent transport behavior is demonstrated in a simple two terminal graphene structure with clearly-resolved Fabry-Perot oscillations in sub-100 nm devices. By aggressively scaling the channel length down to 50 nm, we study the evolution of the graphene transistor from the channel-dominated diffusive regime to the contact-dominated ballistic regime. Key issues such as the current asymmetry, the question of Fermi level pinning by the contacts, the graphene screening determining the heterojunction barrier width, the scaling of minimum conductivity and of the on/off current ratio, are investigated.
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Submitted 11 May, 2012;
originally announced May 2012.
