Observation of an environmentally insensitive solid state spin defect in diamond
Authors:
Brendon C. Rose,
Ding Huang,
Zi-Huai Zhang,
Alexei M. Tyryshkin,
Sorawis Sangtawesin,
Srikanth Srinivasan,
Lorne Loudin,
Matthew L. Markham,
Andrew M. Edmonds,
Daniel J. Twitchen,
Stephen A. Lyon,
Nathalie P. de Leon
Abstract:
Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid state platform. However, the solid environment can adversely impact coherence. For example, phonon- mediated spin relaxation can induce spin decoherence, and electric field noise can change the opt…
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Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid state platform. However, the solid environment can adversely impact coherence. For example, phonon- mediated spin relaxation can induce spin decoherence, and electric field noise can change the optical transition frequency over time. We report a novel color center with insensitivity to both of these sources of environmental decoherence: the neutral charge state of silicon vacancy (SiV0). Through careful material engineering, we achieve over 80% conversion of implanted silicon to SiV0. SiV0 exhibits excellent spin properties, with spin-lattice relaxation times (T1) approaching one minute and coherence times (T2) approaching one second, as well as excellent optical properties, with approximately 90% of its emission into the zero-phonon line and near-transform limited optical linewidths. These combined properties make SiV0 a promising defect for quantum networks.
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Submitted 5 June, 2017;
originally announced June 2017.
