-
Quantum Instrumentation Control Kit -- Defect Arbitrary Waveform Generator (QICK-DAWG): A Quantum Sensing Control Framework for Quantum Defects
Authors:
Emmeline G. Riendeau,
Luca Basso,
Jasmine J. Mah,
Rong Cong,
MA Sadi,
Jacob Henshaw,
KM Azizur-Rahman,
Aulden Jones,
Gajadhar Joshi,
Michael P. Lilly,
Andrew A. Mounce
Abstract:
Quantum information communication, sensing, and computation often require complex and expensive instrumentation resulting in a large entry barrier. The Quantum Instrumentation Control Kit (QICK) overcomes this barrier for superconducting qubits with a collection of software and firmware for state-of-the-art radio frequency system on chip (RFSoC's) field programmable gate architecture (FPGA) chips.…
▽ More
Quantum information communication, sensing, and computation often require complex and expensive instrumentation resulting in a large entry barrier. The Quantum Instrumentation Control Kit (QICK) overcomes this barrier for superconducting qubits with a collection of software and firmware for state-of-the-art radio frequency system on chip (RFSoC's) field programmable gate architecture (FPGA) chips. Here we present a software and firmware extension to QICK, the Quantum Instrumentation Control Kit - Defect Arbitrary Waveform Generator (QICK-DAWG), which is an open-source software and firmware package that supports full quantum control and measurement of nitrogen-vacancy defects in diamond and other quantum defects using RFSoC FPGAs. QICKDAWG extends QICK to the characterization of nitrogen-vacancy defects and other diamond quantum defects by implementing DC-1 GHz readout, AOM or gated laser control, and analog or photon counting readout options. QICK-DAWG also adds pulse sequence programs and data analysis scripts to collect and characterize photoluminescence (PL) intensity, optically detected magnetic resonance (ODMR) spectra, PL readout windows, Rabi oscillations, Ramsay interference spectra, Hahn echo spin-spin relaxation times T$_2$, and spin-lattice relaxation times T$_1$. We demonstrate that QICK-DAWG is a powerful new paradigm of open source quantum hardware that significantly lowers the entry barrier and cost for quantum sensing using quantum defects.
△ Less
Submitted 30 November, 2023;
originally announced November 2023.
-
Mitigation of Nitrogen Vacancy Ionization from Material Integration for Quantum Sensing
Authors:
Jacob Henshaw,
Pauli Kehayias,
Luca Basso,
Michael Jaris,
Rong Cong,
Michael Titze,
Tzu-Ming Lu,
Michael P. Lilly,
Andrew M. Mounce
Abstract:
The nitrogen-vacancy (NV) color center in diamond has demonstrated great promise in a wide range of quantum sensing. Recently, there have been a series of proposals and experiments using NV centers to detect spin noise of quantum materials near the diamond surface. This is a rich complex area of study with novel nano-magnetism and electronic behavior, that the NV center would be ideal for sensing.…
▽ More
The nitrogen-vacancy (NV) color center in diamond has demonstrated great promise in a wide range of quantum sensing. Recently, there have been a series of proposals and experiments using NV centers to detect spin noise of quantum materials near the diamond surface. This is a rich complex area of study with novel nano-magnetism and electronic behavior, that the NV center would be ideal for sensing. However, due to the electronic properties of the NV itself and its host material, getting high quality NV centers within nanometers of such systems is challenging. Band bending caused by space charges formed at the metal-semiconductor interface force the NV center into its insensitive charge states. Here, we investigate optimizing this interface by depositing thin metal films and thin insulating layers on a series of NV ensembles at different depths to characterize the impact of metal films on different ensemble depths. We find an improvement of coherence and dephasing times we attribute to ionization of other paramagnetic defects. The insulating layer of alumina between the metal and diamond provide improved photoluminescence and higher sensitivity in all modes of sensing as compared to direct contact with the metal, providing as much as a factor of 2 increase in sensitivity, decrease of integration time by a factor of 4, for NV $T_1$ relaxometry measurements.
△ Less
Submitted 12 April, 2023;
originally announced April 2023.
-
Current Paths in an Atomic Precision Advanced Manufactured Device Imaged by Nitrogen-Vacancy Diamond Magnetic Microscopy
Authors:
Luca Basso,
Pauli Kehayias,
Jacob Henshaw,
Maziar Saleh Ziabari,
Heejun Byeon,
Michael P. Lilly,
Ezra Bussmann,
Deanna M. Campbell,
Shashank Misra,
Andrew M. Mounce
Abstract:
The recently-developed ability to control phosphorous-do** of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include wh…
▽ More
The recently-developed ability to control phosphorous-do** of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and map** of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this paper, we performed nitrogen-vacancy (NV) wide-field magnetic imaging of stray magnetic fields from surface current densities flowing in an APAM test device over a mm-field of view with μm-resolution. To do this, we integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current density, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ~0.03 A/m, corresponding to a smallest detectable current in the 200 μm-wide APAM ribbon of ~6 μA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.
△ Less
Submitted 28 July, 2022;
originally announced July 2022.
-
Nanoscale Solid-State Nuclear Quadrupole Resonance Spectroscopy using Depth-Optimized Nitrogen-Vacancy Ensembles in Diamond
Authors:
Jacob Henshaw,
Pauli Kehayias,
Maziar Saleh Ziabari,
Michael Titze,
Erin Morissette,
Kenji Watanabe,
Takashi Taniguchi,
J. I. A Li,
Victor M. Acosta,
Edward Bielejec,
Michael P. Lilly,
Andrew M. Mounce
Abstract:
Nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) spectroscopy of bulk quantum materials have provided insight into phenomena such as quantum phase criticality, magnetism, and superconductivity. With the emergence of nanoscale 2-D materials with magnetic phenomena, inductively-detected NMR and NQR spectroscopy are not sensitive enough to detect the smaller number of spins in…
▽ More
Nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) spectroscopy of bulk quantum materials have provided insight into phenomena such as quantum phase criticality, magnetism, and superconductivity. With the emergence of nanoscale 2-D materials with magnetic phenomena, inductively-detected NMR and NQR spectroscopy are not sensitive enough to detect the smaller number of spins in nanomaterials. The nitrogen-vacancy (NV) center in diamond has shown promise in bringing the analytic power of NMR and NQR spectroscopy to the nanoscale. However, due to depth-dependent formation efficiency of the defect centers, noise from surface spins, band bending effects, and the depth dependence of the nuclear magnetic field, there is ambiguity regarding the ideal NV depth for surface NMR of statistically-polarized spins. In this work, we prepared a range of shallow NV ensemble layer depths and determined the ideal NV depth by performing NMR spectroscopy on statistically-polarized \fluorine{} in Fomblin oil on the diamond surface. We found that the measurement time needed to achieve an SNR of 3 using XY8-N noise spectroscopy has a minimum at an NV depth of 5.4 nm. To demonstrate the sensing capabilities of NV ensembles, we perform NQR spectroscopy on the \boron{} of hexagonal boron nitride flakes. We compare our best diamond to previous work with a single NV and find that this ensemble provides a shorter measurement time with excitation diameters as small as 4 $μ$m. This analysis provides ideal conditions for further experiments involving NMR/NQR spectroscopy of 2-D materials with magnetic properties.
△ Less
Submitted 29 December, 2021;
originally announced December 2021.
-
Measurement and Simulation of the Magnetic Fields from a 555 Timer Integrated Circuit using a Quantum Diamond Microscope and Finite Element Analysis
Authors:
P. Kehayias,
E. V. Levine,
L. Basso,
J. Henshaw,
M. Saleh Ziabari,
M. Titze,
R. Haltli,
J. Okoro,
D. R. Tibbetts,
D. M. Udoni,
E. Bielejec,
M. P. Lilly,
T. M. Lu,
P. D. D. Schwindt,
A. M. Mounce
Abstract:
Quantum Diamond Microscope (QDM) magnetic field imaging is an emerging interrogation and diagnostic technique for integrated circuits (ICs). To date, the ICs measured with a QDM were either too complex for us to predict the expected magnetic fields and benchmark the QDM performance, or were too simple to be relevant to the IC community. In this paper, we establish a 555 timer IC as a "model system…
▽ More
Quantum Diamond Microscope (QDM) magnetic field imaging is an emerging interrogation and diagnostic technique for integrated circuits (ICs). To date, the ICs measured with a QDM were either too complex for us to predict the expected magnetic fields and benchmark the QDM performance, or were too simple to be relevant to the IC community. In this paper, we establish a 555 timer IC as a "model system" to optimize QDM measurement implementation, benchmark performance, and assess IC device functionality. To validate the magnetic field images taken with a QDM, we used a SPICE electronic circuit simulator and Finite Element Analysis (FEA) to model the magnetic fields from the 555 die for two functional states. We compare the advantages and the results of three IC-diamond measurement methods, confirm that the measured and simulated magnetic images are consistent, identify the magnetic signatures of current paths within the device, and discuss using this model system to advance QDM magnetic imaging as an IC diagnostic tool.
△ Less
Submitted 19 January, 2022; v1 submitted 23 September, 2021;
originally announced September 2021.
-
Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon
Authors:
Patrick Harvey-Collard,
N. Tobias Jacobson,
Chloé Bureau-Oxton,
Ryan M. Jock,
Vanita Srinivasa,
Andrew M. Mounce,
Daniel R. Ward,
John M. Anderson,
Ronald P. Manginell,
Joel R. Wendt,
Tammy Pluym,
Michael P. Lilly,
Dwight R. Luhman,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the s…
▽ More
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates.
△ Less
Submitted 11 June, 2019; v1 submitted 22 August, 2018;
originally announced August 2018.
-
Quantum dots with split enhancement gate tunnel barrier control
Authors:
S. Rochette,
M. Rudolph,
A. -M. Roy,
M. Curry,
G. Ten Eyck,
R. Manginell,
J. Wendt,
T. Pluym,
S. M. Carr,
D. Ward,
M. P. Lilly,
M. S. Carroll,
M. Pioro-Ladrière
Abstract:
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attai…
▽ More
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the reservoir, is observed in all devices, and is expected to play a role in the sizable tuning orthogonality of the split enhancement gate structure. The all-silicon process is expected to minimize strain gradients from electrode thermal mismatch, while the single gate layer should avoid issues related to overlayers (e.g., additional dielectric charge noise) and help improve yield. Finally, reservoir gate control of the tunnel barrier has implications for initialization, manipulation and readout schemes in multi-quantum dot architectures.
△ Less
Submitted 5 March, 2019; v1 submitted 12 July, 2017;
originally announced July 2017.
-
High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
Authors:
Patrick Harvey-Collard,
Benjamin D'Anjou,
Martin Rudolph,
N. Tobias Jacobson,
Jason Dominguez,
Gregory A. Ten Eyck,
Joel R. Wendt,
Tammy Pluym,
Michael P. Lilly,
William A. Coish,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge map** processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readou…
▽ More
The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge map** processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readout. We achieve average single-shot readout fidelities > 99.3% and > 99.86% for the conventional and enhanced readout respectively, the latter being the highest to date for spin blockade. The signal amplitude is enhanced to a full one-electron signal while preserving the readout speed. Furthermore, layout constraints are relaxed because the charge sensor signal is no longer dependent on being aligned with the conventional (2, 0) - (1, 1) charge dipole. Silicon donor-quantum-dot qubits are used for this study, for which the dipole insensitivity substantially relaxes donor placement requirements. One of the readout variations also benefits from a parametric lifetime enhancement by replacing the spin-relaxation process with a charge-metastable one. This provides opportunities to further increase the fidelity. The relaxation mechanisms in the different regimes are investigated. This work demonstrates a readout that is fast, has one-electron signal and results in higher fidelity. It further predicts that going beyond 99.9% fidelity in a few microseconds of measurement time is within reach.
△ Less
Submitted 31 January, 2018; v1 submitted 7 March, 2017;
originally announced March 2017.
-
Coherent coupling between a quantum dot and a donor in silicon
Authors:
Patrick Harvey-Collard,
N. Tobias Jacobson,
Martin Rudolph,
Jason Dominguez,
Gregory A. Ten Eyck,
Joel R. Wendt,
Tammy Pluym,
John King Gamble,
Michael P. Lilly,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of…
▽ More
Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a $^{31}$P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show that the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit.
△ Less
Submitted 18 October, 2017; v1 submitted 4 December, 2015;
originally announced December 2015.
-
Efficient self-consistent quantum transport simulator for quantum devices
Authors:
Xujiao Gao,
Denis Mamaluy,
Erik Nielsen,
Ralph W. Young,
Amir Shirkhorshidian,
Michael P. Lilly,
Nathan C. Bishop,
Malcolm S. Carroll,
Richard P. Muller
Abstract:
We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulation of 1D quantum devices. Applying the general CBR approach to 1D open systems results in a set of very simple equations that are derived and given in detail for the first time. The charge self-consistency of the coupled…
▽ More
We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulation of 1D quantum devices. Applying the general CBR approach to 1D open systems results in a set of very simple equations that are derived and given in detail for the first time. The charge self-consistency of the coupled CBR-Poisson equations is achieved by using the predictor-corrector iteration scheme with the optional Anderson acceleration. In addition, we introduce a new way to convert an equilibrium electrostatic barrier potential calculated from an external simulator to an effective do** profile, which is then used by the CBR-Poisson code for transport simulation of the barrier under non-zero biases. The code has been applied to simulate the quantum transport in a double barrier structure and across a tunnel barrier in a silicon double quantum dot. Extremely fast self-consistent 1D simulations of the differential conductance across a tunnel barrier in the quantum dot show better qualitative agreement with experiment than non-self-consistent simulations.
△ Less
Submitted 28 March, 2014;
originally announced March 2014.
-
QCAD Simulation and Optimization of Semiconductor Quantum Dots
Authors:
Xujiao Gao,
Erik Nielsen,
Richard P. Muller,
Ralph W. Young,
Andrew G. Salinger,
Nathan C. Bishop,
Michael P. Lilly,
Malcolm S. Carroll
Abstract:
We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed for quantum bits (qubits). This finite-element simulator has three differentiating features: (i) its core contains nonlinear Poisson, effective mass Schrodinger, and Configuration Interaction solvers that have massively paral…
▽ More
We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed for quantum bits (qubits). This finite-element simulator has three differentiating features: (i) its core contains nonlinear Poisson, effective mass Schrodinger, and Configuration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; and (iii) it interfaces directly with the full-featured optimization engine Dakota. In this work, we describe the capabilities and implementation of the QCAD simulation tool, and show how it can be used to both analyze existing experimental QD devices through capacitance calculations, and aid in the design of few-electron multi-QDs. In particular, we observe that computed capacitances are in rough agreement with experiment, and that quantum confinement increases capacitance when the number of electrons is fixed in a quantum dot. Coupling of QCAD with the optimizer Dakota allows for rapid identification and improvement of device layouts that are likely to exhibit few-electron quantum dot characteristics.
△ Less
Submitted 28 March, 2014;
originally announced March 2014.
-
Spontaneous emission in a silicon charge qubit
Authors:
Khoi T. Nguyen,
N. Tobias Jacobson,
Michael P. Lilly,
Nathaniel C. Bishop,
Erik Nielsen,
Joel R. Wendt,
J. Dominguez,
T. Pluym,
Malcolm S. Carroll
Abstract:
The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double quantum dot (DQD) charge qubit through sensing the charge state's response to non-adiabatic driving of its excited state population. The charge distribution is sens…
▽ More
The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double quantum dot (DQD) charge qubit through sensing the charge state's response to non-adiabatic driving of its excited state population. The charge distribution is sensed remotely in the weak measurement regime. We extract emission rates down to kHz frequencies by measuring the variation of the non-equilibrium charge occupancy as a function of amplitude and dwell times between non-adiabatic pulses. Our measurement of the energy-dependent relaxation rate provides a fingerprint of the relaxation mechanism, indicating that relaxation rates for this Si MOS DQD are consistent with coupling to deformation acoustic phonons.
△ Less
Submitted 14 March, 2014;
originally announced March 2014.
