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Implications of Electronics Constraints for Solid-State Quantum Error Correction and Quantum Circuit Failure Probability
Authors:
James E. Levy,
Malcolm S. Carroll,
Anand Ganti,
Cynthia A. Phillips,
Andrew J. Landahl,
Thomas M. Gurrieri,
Robert D. Carr,
Harold L. Stalford,
Erik Nielsen
Abstract:
In this paper we present the impact of classical electronics constraints on a solid-state quantum dot logical qubit architecture. Constraints due to routing density, bandwidth allocation, signal timing, and thermally aware placement of classical supporting electronics significantly affect the quantum error correction circuit's error rate. We analyze one level of a quantum error correction circuit…
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In this paper we present the impact of classical electronics constraints on a solid-state quantum dot logical qubit architecture. Constraints due to routing density, bandwidth allocation, signal timing, and thermally aware placement of classical supporting electronics significantly affect the quantum error correction circuit's error rate. We analyze one level of a quantum error correction circuit using nine data qubits in a Bacon-Shor code configured as a quantum memory. A hypothetical silicon double quantum dot quantum bit (qubit) is used as the fundamental element. A pessimistic estimate of the error probability of the quantum circuit is calculated using the total number of gates and idle time using a provably optimal schedule for the circuit operations obtained with an integer program methodology. The micro-architecture analysis provides insight about the different ways the electronics impact the circuit performance (e.g., extra idle time in the schedule), which can significantly limit the ultimate performance of any quantum circuit and therefore is a critical foundation for any future larger scale architecture analysis.
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Submitted 3 May, 2011;
originally announced May 2011.
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Coherent electron transport by adiabatic passage in an imperfect donor chain
Authors:
Rajib Rahman,
Richard P. Muller,
James E. Levy,
Malcolm S. Carroll,
Gerhard Klimeck,
Andrew D. Greentree,
Lloyd C. L. Hollenberg
Abstract:
Coherent Tunneling Adiabatic Passage (CTAP) has been proposed as a long-range physical qubit transport mechanism in solid-state quantum computing architectures. Although the mechanism can be implemented in either a chain of quantum dots or donors, a 1D chain of donors in Si is of particular interest due to the natural confining potential of donors that can in principle help reduce the gate densiti…
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Coherent Tunneling Adiabatic Passage (CTAP) has been proposed as a long-range physical qubit transport mechanism in solid-state quantum computing architectures. Although the mechanism can be implemented in either a chain of quantum dots or donors, a 1D chain of donors in Si is of particular interest due to the natural confining potential of donors that can in principle help reduce the gate densities in solid-state quantum computing architectures. Using detailed atomistic modeling, we investigate CTAP in a more realistic triple donor system in the presence of inevitable fabrication imperfections. In particular, we investigate how an adiabatic pathway for CTAP is affected by donor misplacements, and propose schemes to correct for such errors. We also investigate the sensitivity of the adiabatic path to gate voltage fluctuations. The tight-binding based atomistic treatment of straggle used here may benefit understanding of other donor nanostructures, such as donor-based charge and spin qubits. Finally, we derive an effective 3 \times 3 model of CTAP that accurately resembles the voltage tuned lowest energy states of the multi-million atom tight-binding simulations, and provides a translation between intensive atomistic Hamiltonians and simplified effective Hamiltonians while retaining the relevant atomic-scale information. This method can help characterize multi-donor experimental structures quickly and accurately even in the presence of imperfections, overcoming some of the numeric intractabilities of finding optimal eigenstates for non-ideal donor placements.
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Submitted 5 August, 2010;
originally announced August 2010.
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Capacitance modeling of complex topographical silicon quantum dot structures
Authors:
H. L. Stalford,
R. Young,
E. P. Nordberg,
James. E. Levy,
Carlos Borras Pinilla,
M. S. Carroll
Abstract:
Quantum dot (QD) lay-outs are becoming more complex as the technology is being applied to more complex multi-QD structures. This increase in complexity requires improved capacitance modeling both for design and accurate interpretation of QD properties from measurement. A combination of process simulation, electrostatic simulation, and computer assisted design (CAD) lay-out packages are used to d…
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Quantum dot (QD) lay-outs are becoming more complex as the technology is being applied to more complex multi-QD structures. This increase in complexity requires improved capacitance modeling both for design and accurate interpretation of QD properties from measurement. A combination of process simulation, electrostatic simulation, and computer assisted design (CAD) lay-out packages are used to develop a three dimensional (3D) classical capacitance model. The agreement of the capacitances of the classical model is tested against two different, experimentally measured, topographically complex silicon QD geometries. Agreement with experiment, within 10-20%, is demonstrated for the two structures when the details of the structure are transferred from the CAD to the model capturing the full 3D topography. Small uncertainty in device dimensions due to uncontrolled variation in processing, like layer thickness and gate size, are calculated to be sufficient to explain the disagreement. The sensitivity of the capacitances to small variations in the structure also highlights the limits of accuracy of capacitance models for QD analysis. We furthermore observe that a critical density, the metal insulator transition, can be used as a good approximation of the metallic edge of the quantum dot when electron density in the dot is calculated directly with a semi-classical simulation.
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Submitted 18 November, 2009;
originally announced November 2009.
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The impact of classical electronics constraints on a solid-state logical qubit memory
Authors:
James E. Levy,
Anand Ganti,
Cynthia A. Phillips,
Benjamin R. Hamlet,
Andrew J. Landahl,
Thomas M. Gurrieri,
Robert D. Carr,
Malcolm S. Carroll
Abstract:
We describe a fault-tolerant memory for an error-corrected logical qubit based on silicon double quantum dot physical qubits. Our design accounts for constraints imposed by supporting classical electronics. A significant consequence of the constraints is to add error-prone idle steps for the physical qubits. Even using a schedule with provably minimum idle time, for our noise model and choice of…
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We describe a fault-tolerant memory for an error-corrected logical qubit based on silicon double quantum dot physical qubits. Our design accounts for constraints imposed by supporting classical electronics. A significant consequence of the constraints is to add error-prone idle steps for the physical qubits. Even using a schedule with provably minimum idle time, for our noise model and choice of error-correction code, we find that these additional idles negate any benefits of error correction. Using additional qubit operations, we can greatly suppress idle-induced errors, making error correction beneficial, provided the qubit operations achieve an error rate less than $2 \times 10^{-5}$. We discuss other consequences of these constraints such as error-correction code choice and physical qubit operation speed. While our analysis is specific to this memory architecture, the methods we develop are general enough to apply to other architectures as well.
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Submitted 31 March, 2009;
originally announced April 2009.
