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Quantum optimal control robust to $1/f^α$ noises using fractional calculus: voltage-controlled exchange in semiconductor spin qubits
Authors:
Bohdan Khromets,
Jonathan Baugh
Abstract:
Low-frequency $1/f^α$ charge noise significantly hinders the performance of voltage-controlled spin qubits in quantum dots. Here, we utilize fractional calculus to design voltage control pulses yielding the highest average fidelities for noisy quantum gate operations. We focus specifically on the exponential voltage control of the exchange interaction generating two-spin $\mathrm{SWAP}^k$ gates. W…
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Low-frequency $1/f^α$ charge noise significantly hinders the performance of voltage-controlled spin qubits in quantum dots. Here, we utilize fractional calculus to design voltage control pulses yielding the highest average fidelities for noisy quantum gate operations. We focus specifically on the exponential voltage control of the exchange interaction generating two-spin $\mathrm{SWAP}^k$ gates. When stationary charge noise is the dominant source of gate infidelity, we derive that the optimal exchange pulse is long and weak, with the broad shape of the symmetric beta distribution function with parameter $1-α/2$. The common practice of making exchange pulses fast and high-amplitude still remains beneficial in the case of strongly nonstationary noise dynamics, modeled as fractional Brownian motion. The proposed methods are applicable to the characterization and optimization of quantum gate operations in various voltage-controlled qubit architectures.
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Submitted 22 May, 2024; v1 submitted 21 May, 2024;
originally announced May 2024.
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Hamiltonian engineering with time-ordered evolution for unitary control of electron spins in semiconductor quantum dots
Authors:
Bohdan Khromets,
Zach D. Merino,
Jonathan Baugh
Abstract:
We present a unitary control pulse design method for a scalable quantum computer architecture based on electron spins in lateral quantum dots. We employ simultaneous control of spin interactions and derive the functional forms of spin Hamiltonian parameter pulses for a universal set of 1- and 2-qubit logic gates. This includes selective spin rotations with the weak local g-factor variations in the…
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We present a unitary control pulse design method for a scalable quantum computer architecture based on electron spins in lateral quantum dots. We employ simultaneous control of spin interactions and derive the functional forms of spin Hamiltonian parameter pulses for a universal set of 1- and 2-qubit logic gates. This includes selective spin rotations with the weak local g-factor variations in the presence of the global oscillating field, and a Control-Phase operation with the simultaneous control of g-factors and exchange couplings. We outline how to generalize the control scheme to multiqubit gate operations and the case of constrained or imperfect control of the Hamiltonian parameters.
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Submitted 12 February, 2024;
originally announced February 2024.
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Optimizing lateral quantum dot geometries for reduced exchange noise
Authors:
Brandon Buonacorsi,
Marek Korkusinski,
Bohdan Khromets,
Jonathan Baugh
Abstract:
For electron spin qubits in quantum dots, reducing charge noise sensitivity is a critical step in achieving fault tolerant two-qubit gates mediated by the exchange interaction. This work explores how the physical device geometry affects the sensitivity of exchange to fluctuations in applied gate voltage and interdot bias due to charge noise. We present a modified linear combination of harmonic orb…
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For electron spin qubits in quantum dots, reducing charge noise sensitivity is a critical step in achieving fault tolerant two-qubit gates mediated by the exchange interaction. This work explores how the physical device geometry affects the sensitivity of exchange to fluctuations in applied gate voltage and interdot bias due to charge noise. We present a modified linear combination of harmonic orbitals configuration interaction (LCHO-CI) method for calculating exchange energies that is applicable to general quantum dot networks. In the modified LCHO-CI approach, an orthogonal set of harmonic orbitals formed at the center of the dot network is used to approximate the many-electron states. This choice of basis significantly reduces the computation time of the full CI calculation by enabling a pre-calculated library of matrix elements to be used in evaluating the Coulomb integrals. The resultant many-electron spectra are mapped onto a Heisenberg Hamiltonian to determine the individual pairwise electronic exchange interaction strengths, $J_{ij}$. The accuracy of the modified LCHO-CI method is further improved by optimizing the choice of harmonic orbitals without significantly lengthening the calculation time. The modified LCHO-CI method is used to calculate $J$ for a silicon MOSFET double quantum dot occupied by two electrons. Two-dimensional potential landscapes are calculated from a 3D device structure, including both the Si/SiO$_2$ heterostructure and metal gate electrodes. The computational efficiency of the modified LCHO-CI method enables systematic tuning of the device parameters to determine their impact on the sensitivity of $J$ to charge noise, including plunger gate size, tunnel gate width, SiO$_2$ thickness and dot eccentricity. Generally, we find that geometries with larger dot charging energies, smaller plunger gate lever arms, and symmetric dots are less sensitive to noise.
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Submitted 18 December, 2020;
originally announced December 2020.
