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Characterization of individual charge fluctuators in Si/SiGe quantum dots
Authors:
Feiyang Ye,
Ammar Ellaboudy,
Dylan Albrecht,
Rohith Vudatha,
N. Tobias Jacobson,
John M. Nichol
Abstract:
Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge noise in the semiconductor environment still hinders further improvements. Despite the importance of charge noise, key questions about the specific nature of the f…
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Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge noise in the semiconductor environment still hinders further improvements. Despite the importance of charge noise, key questions about the specific nature of the fluctuators that cause charge noise remain unanswered. Here, we probe individual two-level fluctuators (TLFs) in Si/SiGe quantum dots through simple quantum-dot transport measurement and analyses based on the Allan variance and factorial hidden Markov modeling. We find that the TLF switching times depend sensitively on gate voltages, decrease with temperature, and depend on the current through a nearby quantum dot. A model for the data of the primary TLF we study indicates that it may be a bistable charge dipole near the plunger gate electrode, heated by current through the sensor dot, and experiencing state transitions driven not by direct electron-phonon coupling but through some other mechanism such as coupling to electrons passing through the sensor dot.
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Submitted 25 January, 2024;
originally announced January 2024.
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A silicon singlet-triplet qubit driven by spin-valley coupling
Authors:
Ryan M. Jock,
N. Tobias Jacobson,
Martin Rudolph,
Daniel R. Ward,
Malcolm S. Carroll,
Dwight R. Luhman
Abstract:
Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here, we demonstrate a novel singlet-triplet qubit operating mode that can drive qubit evolution at frequencies in excess of 200 MHz. This approach offers…
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Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here, we demonstrate a novel singlet-triplet qubit operating mode that can drive qubit evolution at frequencies in excess of 200 MHz. This approach offers a means to electrically turn on and off fast control, while providing high logic gate orthogonality and long qubit dephasing times. We utilize this operational mode for dynamical decoupling experiments to probe the charge noise power spectrum in a silicon metal-oxide-semiconductor double quantum dot. In addition, we assess qubit frequency drift over longer timescales to capture low-frequency noise. We present the charge noise power spectral density up to 3 MHz, which exhibits a $1/f^α$ dependence consistent with $α\sim 0.7$, over 9 orders of magnitude in noise frequency.
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Submitted 11 November, 2021; v1 submitted 24 February, 2021;
originally announced February 2021.
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Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon
Authors:
Patrick Harvey-Collard,
N. Tobias Jacobson,
Chloé Bureau-Oxton,
Ryan M. Jock,
Vanita Srinivasa,
Andrew M. Mounce,
Daniel R. Ward,
John M. Anderson,
Ronald P. Manginell,
Joel R. Wendt,
Tammy Pluym,
Michael P. Lilly,
Dwight R. Luhman,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the s…
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Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates.
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Submitted 11 June, 2019; v1 submitted 22 August, 2018;
originally announced August 2018.
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Probing low noise at the MOS interface with a spin-orbit qubit
Authors:
Ryan M. Jock,
N. Tobias Jacobson,
Patrick Harvey-Collard,
Andrew M. Mounce,
Vanita Srinivasa,
Dan R. Ward,
John Anderson,
Ron Manginell,
Joel R. Wendt,
Martin Rudolph,
Tammy Pluym,
John King Gamble,
Andrew D. Baczewski,
Wayne M. Witzel,
Malcolm S. Carroll
Abstract:
The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns hav…
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The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet-triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 $μ$s using 99.95% $^{28}$Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise.
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Submitted 13 July, 2017;
originally announced July 2017.
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High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
Authors:
Patrick Harvey-Collard,
Benjamin D'Anjou,
Martin Rudolph,
N. Tobias Jacobson,
Jason Dominguez,
Gregory A. Ten Eyck,
Joel R. Wendt,
Tammy Pluym,
Michael P. Lilly,
William A. Coish,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge map** processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readou…
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The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge map** processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readout. We achieve average single-shot readout fidelities > 99.3% and > 99.86% for the conventional and enhanced readout respectively, the latter being the highest to date for spin blockade. The signal amplitude is enhanced to a full one-electron signal while preserving the readout speed. Furthermore, layout constraints are relaxed because the charge sensor signal is no longer dependent on being aligned with the conventional (2, 0) - (1, 1) charge dipole. Silicon donor-quantum-dot qubits are used for this study, for which the dipole insensitivity substantially relaxes donor placement requirements. One of the readout variations also benefits from a parametric lifetime enhancement by replacing the spin-relaxation process with a charge-metastable one. This provides opportunities to further increase the fidelity. The relaxation mechanisms in the different regimes are investigated. This work demonstrates a readout that is fast, has one-electron signal and results in higher fidelity. It further predicts that going beyond 99.9% fidelity in a few microseconds of measurement time is within reach.
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Submitted 31 January, 2018; v1 submitted 7 March, 2017;
originally announced March 2017.
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Valley splitting of single-electron Si MOS quantum dots
Authors:
John King Gamble,
Patrick Harvey-Collard,
N. Tobias Jacobson,
Andrew D. Baczewski,
Erik Nielsen,
Leon Maurer,
Inès Montaño,
Martin Rudolph,
M. S. Carroll,
C. H. Yang,
A. Rossi,
A. S. Dzurak,
Richard P. Muller
Abstract:
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory rem…
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Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from a new experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both the new experiment and a recently reported one. Through sampling millions of realistic cases of interface roughness, our method provides evidence that, despite radically different processing, the valley physics between the two samples is essentially the same. This work provides the first evidence that valley splitting can be deterministically predicted and controlled in metal oxide semiconductor quantum dots, a critical requirement for such systems to realize a reliable qubit platform.
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Submitted 11 October, 2016;
originally announced October 2016.
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Coherent coupling between a quantum dot and a donor in silicon
Authors:
Patrick Harvey-Collard,
N. Tobias Jacobson,
Martin Rudolph,
Jason Dominguez,
Gregory A. Ten Eyck,
Joel R. Wendt,
Tammy Pluym,
John King Gamble,
Michael P. Lilly,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of…
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Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a $^{31}$P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show that the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit.
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Submitted 18 October, 2017; v1 submitted 4 December, 2015;
originally announced December 2015.
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Multivalley effective mass theory simulation of donors in silicon
Authors:
John King Gamble,
N. Tobias Jacobson,
Erik Nielsen,
Andrew D. Baczewski,
Jonathan E. Moussa,
Inès Montaño,
Richard P. Muller
Abstract:
Last year, Salfi et al. made the first direct measurements of a donor wave function and found extremely good theoretical agreement with atomistic tight-binding [Salfi et al., Nat. Mater. 13, 605 (2014)]. Here, we show that multi-valley effective mass theory, applied properly, does achieve close agreement with tight-binding and hence gives reliable predictions. To demonstrate this, we variationally…
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Last year, Salfi et al. made the first direct measurements of a donor wave function and found extremely good theoretical agreement with atomistic tight-binding [Salfi et al., Nat. Mater. 13, 605 (2014)]. Here, we show that multi-valley effective mass theory, applied properly, does achieve close agreement with tight-binding and hence gives reliable predictions. To demonstrate this, we variationally solve the coupled six-valley Shindo-Nara equations, including silicon's full Bloch functions. Surprisingly, we find that including the full Bloch functions necessitates a tetrahedral, rather than spherical, donor central cell correction to accurately reproduce the experimental energy spectrum of a phosphorus impurity in silicon. We cross-validate this method against atomistic tight-binding calculations, showing that the two theories agree well for the calculation of donor-donor tunnel coupling. Further, we benchmark our results by performing a statistical uncertainty analysis, confirming that derived quantities such as the wave function profile and tunnel couplings are robust with respect to variational energy fluctuations. Finally, we apply this method to exhaustively enumerate the tunnel coupling for all donor-donor configurations within a large search volume, demonstrating conclusively that the tunnel coupling has no spatially stable regions. Though this instability is problematic for reliably coupling donor pairs for two-qubit operations, we identify specific target locations where donor qubits can be placed with scanning tunneling microscopy technology to achieve reliably large tunnel couplings.
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Submitted 2 November, 2015; v1 submitted 13 August, 2014;
originally announced August 2014.
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Spontaneous emission in a silicon charge qubit
Authors:
Khoi T. Nguyen,
N. Tobias Jacobson,
Michael P. Lilly,
Nathaniel C. Bishop,
Erik Nielsen,
Joel R. Wendt,
J. Dominguez,
T. Pluym,
Malcolm S. Carroll
Abstract:
The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double quantum dot (DQD) charge qubit through sensing the charge state's response to non-adiabatic driving of its excited state population. The charge distribution is sens…
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The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double quantum dot (DQD) charge qubit through sensing the charge state's response to non-adiabatic driving of its excited state population. The charge distribution is sensed remotely in the weak measurement regime. We extract emission rates down to kHz frequencies by measuring the variation of the non-equilibrium charge occupancy as a function of amplitude and dwell times between non-adiabatic pulses. Our measurement of the energy-dependent relaxation rate provides a fingerprint of the relaxation mechanism, indicating that relaxation rates for this Si MOS DQD are consistent with coupling to deformation acoustic phonons.
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Submitted 14 March, 2014;
originally announced March 2014.
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Quadratic constrained mixed discrete optimization with an adiabatic quantum optimizer
Authors:
Rishabh Chandra,
N. Tobias Jacobson,
Jonathan E. Moussa,
Steven H. Frankel,
Sabre Kais
Abstract:
We extend the family of problems that may be implemented on an adiabatic quantum optimizer (AQO). When a quadratic optimization problem has at least one set of discrete controls and the constraints are linear, we call this a quadratic constrained mixed discrete optimization (QCMDO) problem. QCMDO problems are NP-hard, and no efficient classical algorithm for their solution is known. Included in th…
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We extend the family of problems that may be implemented on an adiabatic quantum optimizer (AQO). When a quadratic optimization problem has at least one set of discrete controls and the constraints are linear, we call this a quadratic constrained mixed discrete optimization (QCMDO) problem. QCMDO problems are NP-hard, and no efficient classical algorithm for their solution is known. Included in the class of QCMDO problems are combinatorial optimization problems constrained by a linear partial differential equation (PDE) or system of linear PDEs. An essential complication commonly encountered in solving this type of problem is that the linear constraint may introduce many intermediate continuous variables into the optimization while the computational cost grows exponentially with problem size. We resolve this difficulty by develo** a constructive map** from QCMDO to quadratic unconstrained binary optimization (QUBO) such that the size of the QUBO problem depends only on the number of discrete control variables. With a suitable embedding, taking into account the physical constraints of the realizable coupling graph, the resulting QUBO problem can be implemented on an existing AQO. The map** itself is efficient, scaling cubically with the number of continuous variables in the general case and linearly in the PDE case if an efficient preconditioner is available.
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Submitted 20 March, 2014; v1 submitted 7 October, 2013;
originally announced October 2013.
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Unitary equilibration after a quantum quench of a thermal state
Authors:
N. Tobias Jacobson,
Lorenzo Campos Venuti,
Paolo Zanardi
Abstract:
In this work we investigate the equilibration dynamics after a sudden Hamiltonian quench of a quantum spin system initially prepared in a thermal state. To characterize the equilibration we evaluate the Loschmidt echo, a global measure for the degree of distinguishability between the initial and time-evolved quenched states. We present general results valid for small quenches and detailed analysis…
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In this work we investigate the equilibration dynamics after a sudden Hamiltonian quench of a quantum spin system initially prepared in a thermal state. To characterize the equilibration we evaluate the Loschmidt echo, a global measure for the degree of distinguishability between the initial and time-evolved quenched states. We present general results valid for small quenches and detailed analysis of the quantum XY chain. The result is that quantum criticality manifests, even at small but finite temperatures, in a universal double-peaked form of the echo statistics and poor equilibration for sufficiently relevant perturbations. In addition, for this model we find a tight lower bound on the Loschmidt echo in terms of the purity of the initial state and the more-easily-evaluated Hilbert-Schmidt inner product between initial and time-evolved quenched states. This bound allows us to relate the time-averaged Loschmidt echo with the purity of the time-averaged state, a quantity that has been shown to provide an upper bound on the variance of observables.
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Submitted 10 June, 2011;
originally announced June 2011.
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Exact infinite-time statistics of the Loschmidt echo for a quantum quench
Authors:
Lorenzo Campos Venuti,
N. Tobias Jacobson,
Siddhartha Santra,
Paolo Zanardi
Abstract:
The equilibration dynamics of a closed quantum system is encoded in the long-time distribution function of generic observables. In this paper we consider the Loschmidt echo generalized to finite temperature, and show that we can obtain an exact expression for its long-time distribution for a closed system described by a quantum XY chain following a sudden quench. In the thermodynamic limit the log…
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The equilibration dynamics of a closed quantum system is encoded in the long-time distribution function of generic observables. In this paper we consider the Loschmidt echo generalized to finite temperature, and show that we can obtain an exact expression for its long-time distribution for a closed system described by a quantum XY chain following a sudden quench. In the thermodynamic limit the logarithm of the Loschmidt echo becomes normally distributed, whereas for small quenches in the opposite, quasi-critical regime, the distribution function acquires a universal double-peaked form indicating poor equilibration. These findings, obtained by a central limit theorem-type result, extend to completely general models in the small-quench regime.
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Submitted 16 April, 2011;
originally announced April 2011.
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The transition to chaos of coupled oscillators: An operator fidelity susceptibility study
Authors:
N. Tobias Jacobson,
Paolo Giorda,
Paolo Zanardi
Abstract:
The operator fidelity is a measure of the information-theoretic distinguishability between perturbed and unperturbed evolutions. The response of this measure to the perturbation may be formulated in terms of the operator fidelity susceptibility (OFS), a quantity which has been used to investigate the parameter spaces of quantum systems in order to discriminate their regular and chaotic regimes. In…
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The operator fidelity is a measure of the information-theoretic distinguishability between perturbed and unperturbed evolutions. The response of this measure to the perturbation may be formulated in terms of the operator fidelity susceptibility (OFS), a quantity which has been used to investigate the parameter spaces of quantum systems in order to discriminate their regular and chaotic regimes. In this work we numerically study the OFS for a pair of non-linearly coupled two-dimensional harmonic oscillators, a model which is equivalent to that of a hydrogen atom in a uniform external magnetic field. We show how the two terms of the OFS, being linked to the main properties that differentiate regular from chaotic behavior, allow for the detection of this model's transition between the two regimes. In addition, we find that the parameter interval where perturbation theory applies is delimited from above by a local minimum of one of the analyzed terms.
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Submitted 4 May, 2010;
originally announced May 2010.
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Scaling of the fidelity susceptibility in a disordered quantum spin chain
Authors:
N. Tobias Jacobson,
Silvano Garnerone,
Stephan Haas,
Paolo Zanardi
Abstract:
The phase diagram of a quantum XY spin chain with Gaussian-distributed random anisotropies and transverse fields is investigated, with focus on the fidelity susceptibility, a recently introduced quantum information theoretical measure. Monitoring the finite-size scaling of the probability distribution of this quantity as well as its average and typical values, we detect a disorder-induced disapp…
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The phase diagram of a quantum XY spin chain with Gaussian-distributed random anisotropies and transverse fields is investigated, with focus on the fidelity susceptibility, a recently introduced quantum information theoretical measure. Monitoring the finite-size scaling of the probability distribution of this quantity as well as its average and typical values, we detect a disorder-induced disappearance of criticality and the emergence of Griffiths phases in this model. It is found that the fidelity susceptibility is not self-averaging near the disorder-free quantum critical lines. At the Ising critical point the fidelity susceptibility scales as a disorder-strength independent stretched exponential of the system size, in contrast with the quadratic scaling at the corresponding point in the disorder-free XY chain. Along the line where the average anisotropy vanishes the fidelity susceptibility appears to scale extensively, whereas in the disorder-free case this point is quantum critical with quadratic finite-size scaling.
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Submitted 5 May, 2009; v1 submitted 11 March, 2009;
originally announced March 2009.
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Fidelity approach to the disordered quantum XY model
Authors:
Silvano Garnerone,
N. Tobias Jacobson,
Stephan Haas,
Paolo Zanardi
Abstract:
We study the random XY spin chain in a transverse field by analyzing the susceptibility of the ground state fidelity, numerically evaluated through a standard map** of the model onto quasi-free fermions. It is found that the fidelity susceptibility and its scaling properties provide useful information about the phase diagram. In particular it is possible to determine the Ising critical line an…
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We study the random XY spin chain in a transverse field by analyzing the susceptibility of the ground state fidelity, numerically evaluated through a standard map** of the model onto quasi-free fermions. It is found that the fidelity susceptibility and its scaling properties provide useful information about the phase diagram. In particular it is possible to determine the Ising critical line and the Griffiths phase regions, in agreement with previous analytical and numerical results.
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Submitted 4 February, 2009; v1 submitted 29 August, 2008;
originally announced August 2008.
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Quantum Chernoff Bound metric for the XY model at finite temperature
Authors:
Damian F. Abasto,
N. Tobias Jacobson,
Paolo Zanardi
Abstract:
We explore the finite temperature phase diagram of the anisotropic XY spin chain using the Quantum Chernoff Bound metric on thermal states. The analysis of the metric elements allows to easily identify, in terms of different scaling with temperature, quasi-classical and quantum-critical regions. These results extend recent ones obtained using the Bures metric and show that different information-…
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We explore the finite temperature phase diagram of the anisotropic XY spin chain using the Quantum Chernoff Bound metric on thermal states. The analysis of the metric elements allows to easily identify, in terms of different scaling with temperature, quasi-classical and quantum-critical regions. These results extend recent ones obtained using the Bures metric and show that different information-theoretic notions of distance can carry the same sophisticated information about the phase diagram of an interacting many-body system featuring quantum-critical points.
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Submitted 8 November, 2007;
originally announced November 2007.
