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Coherent Erbium Spin Defects in Colloidal Nanocrystal Hosts
Authors:
Joeson Wong,
Mykyta Onizhuk,
Jonah Nagura,
Arashdeep S. Thind,
Jasleen K. Bindra,
Christina Wicker,
Gregory D. Grant,
Yuxuan Zhang,
Jens Niklas,
Oleg G. Poluektov,
Robert F. Klie,
Jiefei Zhang,
Giulia Galli,
F. Joseph Heremans,
David D. Awschalom,
A. Paul Alivisatos
Abstract:
We demonstrate nearly a microsecond of spin coherence in Er3+ ions doped in cerium dioxide nanocrystal hosts, despite a large gyromagnetic ratio and nanometric proximity of the spin defect to the nanocrystal surface. The long spin coherence is enabled by reducing the dopant density below the instantaneous diffusion limit in a nuclear spin-free host material, reaching the limit of a single erbium s…
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We demonstrate nearly a microsecond of spin coherence in Er3+ ions doped in cerium dioxide nanocrystal hosts, despite a large gyromagnetic ratio and nanometric proximity of the spin defect to the nanocrystal surface. The long spin coherence is enabled by reducing the dopant density below the instantaneous diffusion limit in a nuclear spin-free host material, reaching the limit of a single erbium spin defect per nanocrystal. We observe a large Orbach energy in a highly symmetric cubic site, further protecting the coherence in a qubit that would otherwise rapidly decohere. Spatially correlated electron spectroscopy measurements reveal the presence of Ce3+ at the nanocrystal surface that likely acts as extraneous paramagnetic spin noise. Even with these factors, defect-embedded nanocrystal hosts show tremendous promise for quantum sensing and quantum communication applications, with multiple avenues, including core-shell fabrication, redox tuning of oxygen vacancies, and organic surfactant modification, available to further enhance their spin coherence and functionality in the future.
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Submitted 11 June, 2024;
originally announced June 2024.
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Isolation of individual Er quantum emitters in anatase TiO$_2$ on Si photonics
Authors:
Cheng Ji,
Robert M. Pettit,
Shobhit Gupta,
Gregory D. Grant,
Ignas Masiulionis,
Ananthesh Sundaresh,
Skylar Deckoff--Jones,
Max Olberding,
Manish K. Singh,
F. Joseph Heremans,
Supratik Guha,
Alan M. Dibos,
Sean E. Sullivan
Abstract:
Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er$^{3+}$) is of interest because it couples C-band telecom optical transitions with a spin-based memory platform. In order to produce…
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Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er$^{3+}$) is of interest because it couples C-band telecom optical transitions with a spin-based memory platform. In order to produce quantum repeaters at the scale required for a quantum internet, it is imperative to integrate these necessary building blocks with mature and scalable semiconductor processes. In this work, we demonstrate the optical isolation of single Er$^{3+}$ ions in CMOS-compatible titanium dioxide (TiO$_2$) thin films monolithically integrated on a silicon-on-insulator (SOI) photonics platform. Our results demonstrate a first step toward the realization of a monolithically integrated and scalable quantum photonics package based on Er$^{3+}$ doped thin films.
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Submitted 4 June, 2024;
originally announced June 2024.
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Extended spin relaxation times of optically addressed telecom defects in silicon carbide
Authors:
Jonghoon Ahn,
Christina Wicker,
Nolan Bitner,
Michael T. Solomon,
Benedikt Tissot,
Guido Burkard,
Alan M. Dibos,
Jiefei Zhang,
F. Joseph Heremans,
David D. Awschalom
Abstract:
Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived spin states, and a scalable material platform, simultaneously. Here, we employ one such system, vanadium (V4+) in silicon carbide (SiC), to establish a potential telecom spin-photon interface within a mature semiconducto…
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Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived spin states, and a scalable material platform, simultaneously. Here, we employ one such system, vanadium (V4+) in silicon carbide (SiC), to establish a potential telecom spin-photon interface within a mature semiconductor host. This demonstration of efficient optical spin polarization and readout facilitates all optical measurements of temperature-dependent spin relaxation times (T1). With this technique, we lower the temperature from about 2K to 100 mK to observe a remarkable four-orders-of-magnitude increase in spin T1 from all measured sites, with site-specific values ranging from 57 ms to above 27 s. Furthermore, we identify the underlying relaxation mechanisms, which involve a two-phonon Orbach process, indicating the opportunity for strain-tuning to enable qubit operation at higher temperatures. These results position V4+ in SiC as a prime candidate for scalable quantum nodes in future quantum networks.
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Submitted 25 May, 2024;
originally announced May 2024.
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High-Q Cavity Interface for Color Centers in Thin Film Diamond
Authors:
Sophie W. Ding,
Michael Haas,
Xinghan Guo,
Kazuhiro Kuruma,
Chang **,
Zixi Li,
David D. Awschalom,
Nazar Delegan,
F. Joseph Heremans,
Alex High,
Marko Loncar
Abstract:
Quantum information technology offers the potential to realize unprecedented computational resources via secure channels capable of distributing entanglement between quantum computers. Diamond, as a host to atom-like defects with optically-accessible spin qubits, is a leading platform to realize quantum memory nodes needed to extend the reach of quantum links. Photonic crystal (PhC) cavities enhan…
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Quantum information technology offers the potential to realize unprecedented computational resources via secure channels capable of distributing entanglement between quantum computers. Diamond, as a host to atom-like defects with optically-accessible spin qubits, is a leading platform to realize quantum memory nodes needed to extend the reach of quantum links. Photonic crystal (PhC) cavities enhance light-matter interaction and are essential ingredients of an efficient interface between spins and photons that are used to store and communicate quantum information respectively. Despite great effort, however, the realization of visible PhC cavities with high quality factor (Q) and design flexibility is challenging in diamond. Here, we demonstrate one- and two-dimensional PhC cavities fabricated in recently developed thin-film diamonds, featuring Q-factors of 1.8x10$^5$ and 1.6x10$^5$, respectively, the highest Qs for visible PhC cavities realized in any material. Importantly, our fabrication process is simple and high-yield, based on conventional planar fabrication techniques, in contrast to previous approaches that rely on complex undercut methods. We also demonstrate fiber-coupled 1D PhC cavities with high photon extraction efficiency, and optical coupling between a single SiV center and such a cavity at 4K achieving a Purcell factor of 13. The demonstrated diamond thin-film photonic platform will improve the performance and scalability of quantum nodes and expand the range of quantum technologies.
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Submitted 8 February, 2024;
originally announced February 2024.
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Quantum spin probe of single charge dynamics
Authors:
Jonathan C. Marcks,
Mykyta Onizhuk,
Yu-Xin Wang,
Yizhi Zhu,
Yu **,
Benjamin S. Soloway,
Masaya Fukami,
Nazar Delegan,
F. Joseph Heremans,
Aashish A. Clerk,
Giulia Galli,
David D. Awschalom
Abstract:
Electronic defects in semiconductors form the basis for many emerging quantum technologies. Understanding defect spin and charge dynamics in solid state platforms is crucial to develo** these building blocks, but many defect centers are difficult to access at the single-particle level due to the lack of sensitive readout techniques. A method for probing optically inactive spin defects would reve…
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Electronic defects in semiconductors form the basis for many emerging quantum technologies. Understanding defect spin and charge dynamics in solid state platforms is crucial to develo** these building blocks, but many defect centers are difficult to access at the single-particle level due to the lack of sensitive readout techniques. A method for probing optically inactive spin defects would reveal semiconductor physics at the atomic scale and advance the study of new quantum systems. We exploit the intrinsic correlation between the charge and spin states of defect centers to measure defect charge populations and dynamics through the steady-state spin population, read-out at the single-defect level with a nearby optically active qubit. We directly measure ionization and charge relaxation of single dark defects in diamond, effects we do not have access to with traditional coherence-based quantum sensing. These spin resonance-based methods generalize to other solid state defect systems in relevant materials.
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Submitted 5 December, 2023;
originally announced December 2023.
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Optical and spin coherence of Er$^{3+}$ in epitaxial CeO$_2$ on silicon
Authors:
Jiefei Zhang,
Gregory D. Grant,
Ignas Masiulionis,
Michael T. Solomon,
Jasleen K. Bindra,
Jens Niklas,
Alan M. Dibos,
Oleg G. Poluektov,
F. Joseph Heremans,
Supratik Guha,
David D. Awschalom
Abstract:
Solid-state atomic defects with optical transitions in the telecommunication bands, potentially in a nuclear spin free environment, are important for applications in fiber-based quantum networks. Erbium ions doped in CeO$_2$ offer such a desired combination. Here we report on the optical homogeneous linewidth and electron spin coherence of Er$^{3+}$ ions doped in CeO$_2$ epitaxial film grown on a…
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Solid-state atomic defects with optical transitions in the telecommunication bands, potentially in a nuclear spin free environment, are important for applications in fiber-based quantum networks. Erbium ions doped in CeO$_2$ offer such a desired combination. Here we report on the optical homogeneous linewidth and electron spin coherence of Er$^{3+}$ ions doped in CeO$_2$ epitaxial film grown on a Si(111) substrate. The long-lived optical transition near 1530 nm in the environmentally-protected 4f shell of Er$^{3+}$ shows a narrow homogeneous linewidth of 440 kHz with an optical coherence time of 0.72 $μ$s at 3.6 K. The reduced nuclear spin noise in the host allows for Er$^{3+}$ electron spin polarization at 3.6 K, yielding an electron spin coherence of 0.66 $μ$s (in the isolated ion limit) and a spin relaxation of 2.5 ms. These findings indicate the potential of Er$^{3+}$:CeO$_2$ film as a valuable platform for quantum networks and communication applications.
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Submitted 28 September, 2023;
originally announced September 2023.
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Anomalous Purcell decay of strongly driven inhomogeneous emitters coupled to a cavity
Authors:
Michael T. Solomon,
Martin Koppenhöfer,
Mikhail Mamaev,
Cheng Ji,
Gregory Grant,
Ignas Masiulionis,
Sean E. Sullivan,
F. Joseph Heremans,
Supratik Guha,
David D. Awschalom,
Aashish A. Clerk,
Alan M. Dibos
Abstract:
We perform resonant fluorescence lifetime measurements on a nanocavity-coupled erbium ensemble as a function of cavity-laser detuning and pump power. Our measurements reveal an anomalous three-fold suppression of the ensemble Purcell factor at zero cavity detuning and high pump fluence. We capture qualitative aspects of this decay rate suppression using a Tavis-Cummings model of non-interacting sp…
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We perform resonant fluorescence lifetime measurements on a nanocavity-coupled erbium ensemble as a function of cavity-laser detuning and pump power. Our measurements reveal an anomalous three-fold suppression of the ensemble Purcell factor at zero cavity detuning and high pump fluence. We capture qualitative aspects of this decay rate suppression using a Tavis-Cummings model of non-interacting spins coupled to a common cavity.
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Submitted 7 March, 2024; v1 submitted 28 September, 2023;
originally announced September 2023.
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Nanocavity-mediated Purcell enhancement of Er in TiO$_2$ thin films grown via atomic layer deposition
Authors:
Cheng Ji,
Michael T. Solomon,
Gregory D. Grant,
Koichi Tanaka,
Muchuan Hua,
Jianguo Wen,
Sagar K. Seth,
Connor P. Horn,
Ignas Masiulionis,
Manish K. Singh,
Sean E. Sullivan,
F. Joseph Heremans,
David D. Awschalom,
Supratik Guha,
Alan M. Dibos
Abstract:
The use of trivalent erbium (Er$^{3+}$), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunications devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface makes it an ideal candidate for integration into existing optical fiber…
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The use of trivalent erbium (Er$^{3+}$), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunications devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface makes it an ideal candidate for integration into existing optical fiber networks without the need for quantum frequency conversion. However, successful scaling requires a host material with few intrinsic nuclear spins, compatibility with semiconductor foundry processes, and straightforward integration with silicon photonics. Here, we present Er-doped titanium dioxide (TiO$_2$) thin film growth on silicon substrates using a foundry-scalable atomic layer deposition process with a wide range of do** control over the Er concentration. Even though the as-grown films are amorphous, after oxygen annealing they exhibit relatively large crystalline grains, and the embedded Er ions exhibit the characteristic optical emission spectrum from anatase TiO$_2$. Critically, this growth and annealing process maintains the low surface roughness required for nanophotonic integration. Finally, we interface Er ensembles with high quality factor Si nanophotonic cavities via evanescent coupling and demonstrate a large Purcell enhancement (300) of their optical lifetime. Our findings demonstrate a low-temperature, non-destructive, and substrate-independent process for integrating Er-doped materials with silicon photonics. At high do** densities this platform can enable integrated photonic components such as on-chip amplifiers and lasers, while dilute concentrations can realize single ion quantum memories.
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Submitted 23 September, 2023;
originally announced September 2023.
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Quantifying the limits of controllability for the nitrogen-vacancy electron spin defect
Authors:
Paul Kairys,
Jonathan C. Marcks,
Nazar Delegan,
Jiefei Zhang,
David D. Awschalom,
F. Joseph Heremans
Abstract:
Solid-state electron spin qubits, like the nitrogen-vacancy center in diamond, rely on control sequences of population inversion to enhance sensitivity and improve device coherence. But even for this paradigmatic system, the fundamental limits of population inversion and potential impacts on applications like quantum sensing have not been assessed quantitatively. Here, we perform high accuracy sim…
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Solid-state electron spin qubits, like the nitrogen-vacancy center in diamond, rely on control sequences of population inversion to enhance sensitivity and improve device coherence. But even for this paradigmatic system, the fundamental limits of population inversion and potential impacts on applications like quantum sensing have not been assessed quantitatively. Here, we perform high accuracy simulations beyond the rotating wave approximation, including explicit unitary simulation of neighboring nuclear spins. Using quantum optimal control, we identify analytical pulses for the control of a qubit subspace within the spin-1 ground state and quantify the relationship between pulse complexity, control duration, and fidelity. We find exponentially increasing amplitude and bandwidth requirements with reduced control duration and further quantify the emergence of non-Markovian effects for multipulse sequences using sub-nanosecond population inversion. From this, we determine that the reduced fidelity and non-Markovianity is due to coherent interactions of the electron spin with the nuclear spin environment. Ultimately, we identify a potentially realizable regime of nanosecond control duration for high-fidelity multipulse sequences. These results provide key insights into the fundamental limits of quantum information processing using electron spin defects in diamond.
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Submitted 6 September, 2023;
originally announced September 2023.
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Quasi-deterministic Localization of Er Emitters in Thin Film TiO$_2$ through Submicron-scale Crystalline Phase Control
Authors:
Sean E. Sullivan,
Jonghoon Ahn,
Tao Zhou,
Preetha Saha,
Martin V. Holt,
Supratik Guha,
F. J. Heremans,
Manish Kumar Singh
Abstract:
With their shielded 4f orbitals, rare-earth ions (REIs) offer optical and electron spin transitions with good coherence properties even when embedded in a host crystal matrix, highlighting their utility as promising quantum emitters and memories for quantum information processing. Among REIs, trivalent erbium (Er$^{3+}$) uniquely has an optical transition in the telecom C-band, ideal for transmiss…
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With their shielded 4f orbitals, rare-earth ions (REIs) offer optical and electron spin transitions with good coherence properties even when embedded in a host crystal matrix, highlighting their utility as promising quantum emitters and memories for quantum information processing. Among REIs, trivalent erbium (Er$^{3+}$) uniquely has an optical transition in the telecom C-band, ideal for transmission over optical fibers, and making it well-suited for applications in quantum communication. The deployment of Er$^{3+}$ emitters into a thin film TiO$_2$ platform has been a promising step towards scalable integration; however, like many solid-state systems, the deterministic spatial placement of quantum emitters remains an open challenge. We investigate laser annealing as a means to locally tune the optical resonance of Er$^{3+}$ emitters in TiO$_2$ thin films on Si. Using both nanoscale X-ray diffraction measurements and cryogenic photoluminescence spectroscopy, we show that tightly focused below-gap laser annealing can induce anatase to rutile phase transitions in a nearly diffraction-limited area of the films and improve local crystallinity through grain growth. As a percentage of the Er:TiO$_2$ is converted to rutile, the Er$^{3+}$ optical transition blueshifts by 13 nm. We explore the effects of changing laser annealing time and show that the amount of optically active Er:rutile increases linearly with laser power. We additionally demonstrate local phase conversion on microfabricated Si structures, which holds significance for quantum photonics.
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Submitted 28 August, 2023;
originally announced August 2023.
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Magnon-mediated qubit coupling determined via dissipation measurements
Authors:
Masaya Fukami,
Jonathan C. Marcks,
Denis R. Candido,
Leah R. Weiss,
Benjamin Soloway,
Sean E. Sullivan,
Nazar Delegan,
F. Joseph Heremans,
Michael E. Flatté,
David D. Awschalom
Abstract:
Controlled interaction between localized and delocalized solid-state spin systems offers a compelling platform for on-chip quantum information processing with quantum spintronics. Hybrid quantum systems (HQSs) of localized nitrogen-vacancy (NV) centers in diamond and delocalized magnon modes in ferrimagnets-systems with naturally commensurate energies-have recently attracted significant attention,…
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Controlled interaction between localized and delocalized solid-state spin systems offers a compelling platform for on-chip quantum information processing with quantum spintronics. Hybrid quantum systems (HQSs) of localized nitrogen-vacancy (NV) centers in diamond and delocalized magnon modes in ferrimagnets-systems with naturally commensurate energies-have recently attracted significant attention, especially for interconnecting isolated spin qubits at length-scales far beyond those set by the dipolar coupling. However, despite extensive theoretical efforts, there is a lack of experimental characterization of the magnon-mediated interaction between NV centers, which is necessary to develop such hybrid quantum architectures. Here, we experimentally determine the magnon-mediated NV-NV coupling from the magnon-induced self-energy of NV centers. Our results are quantitatively consistent with a model in which the NV center is coupled to magnons by dipolar interactions. This work provides a versatile tool to characterize HQSs in the absence of strong coupling, informing future efforts to engineer entangled solid-state systems.
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Submitted 22 August, 2023;
originally announced August 2023.
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Guiding Diamond Spin Qubit Growth with Computational Methods
Authors:
Jonathan C. Marcks,
Mykyta Onizhuk,
Nazar Delegan,
Yu-Xin Wang,
Masaya Fukami,
Maya Watts,
Aashish A. Clerk,
F. Joseph Heremans,
Giulia Galli,
David D. Awschalom
Abstract:
The nitrogen vacancy (NV) center in diamond, a well-studied, optically active spin defect, is the prototypical system in many state of the art quantum sensing and communication applications. In addition to the enticing properties intrinsic to the NV center, its diamond host's nuclear and electronic spin baths can be leveraged as resources for quantum information, rather than considered solely as s…
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The nitrogen vacancy (NV) center in diamond, a well-studied, optically active spin defect, is the prototypical system in many state of the art quantum sensing and communication applications. In addition to the enticing properties intrinsic to the NV center, its diamond host's nuclear and electronic spin baths can be leveraged as resources for quantum information, rather than considered solely as sources of decoherence. However, current synthesis approaches result in stochastic defect spin positions, reducing the technology's potential for deterministic control and yield of NV-spin bath systems, as well as scalability and integration with other technologies. Here, we demonstrate the use of theoretical calculations of electronic central spin decoherence as an integral part of an NV-spin bath synthesis workflow, providing a path forward for the quantitative design of NV center-based quantum sensing systems. We use computationally generated coherence data to characterize the properties of single NV center qubits across relevant growth parameters to find general trends in coherence time distributions dependent on spin bath dimensionality and density. We then build a maximum likelihood estimator with our theoretical model, enabling the characterization of a test sample through NV T2* measurements. Finally, we explore the impact of dimensionality on the yield of strongly coupled electron spin systems. The methods presented herein are general and applicable to other qubit platforms that can be appropriately simulated.
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Submitted 17 August, 2023;
originally announced August 2023.
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Microwave-based quantum control and coherence protection of tin-vacancy spin qubits in a strain-tuned diamond membrane heterostructure
Authors:
Xinghan Guo,
Alexander M. Stramma,
Zixi Li,
William G. Roth,
Benchen Huang,
Yu **,
Ryan A. Parker,
Jesús Arjona Martínez,
Noah Shofer,
Cathryn P. Michaels,
Carola P. Purser,
Martin H. Appel,
Evgeny M. Alexeev,
Tianle Liu,
Andrea C. Ferrari,
David D. Awschalom,
Nazar Delegan,
Benjamin **ault,
Giulia Galli,
F. Joseph Heremans,
Mete Atatüre,
Alexander A. High
Abstract:
Robust spin-photon interfaces in solids are essential components in quantum networking and sensing technologies. Ideally, these interfaces combine a long-lived spin memory, coherent optical transitions, fast and high-fidelity spin manipulation, and straightforward device integration and scaling. The tin-vacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and…
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Robust spin-photon interfaces in solids are essential components in quantum networking and sensing technologies. Ideally, these interfaces combine a long-lived spin memory, coherent optical transitions, fast and high-fidelity spin manipulation, and straightforward device integration and scaling. The tin-vacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and spin properties at 1.7 K. However, the SnV spin lacks efficient microwave control and its spin coherence degrades with higher temperature. In this work, we introduce a new platform that overcomes these challenges - SnV centers in uniformly strained thin diamond membranes. The controlled generation of crystal strain introduces orbital mixing that allows microwave control of the spin state with 99.36(9) % gate fidelity and spin coherence protection beyond a millisecond. Moreover, the presence of crystal strain suppresses temperature dependent dephasing processes, leading to a considerable improvement of the coherence time up to 223(10) $μ$s at 4 K, a widely accessible temperature in common cryogenic systems. Critically, the coherence of optical transitions is unaffected by the elevated temperature, exhibiting nearly lifetime-limited optical linewidths. Combined with the compatibility of diamond membranes with device integration, the demonstrated platform is an ideal spin-photon interface for future quantum technologies.
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Submitted 6 October, 2023; v1 submitted 21 July, 2023;
originally announced July 2023.
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Direct-bonded diamond membranes for heterogeneous quantum and electronic technologies
Authors:
Xinghan Guo,
Mouzhe Xie,
Anchita Addhya,
Avery Linder,
Uri Zvi,
Stella Wang,
Xiaofei Yu,
Tanvi D. Deshmukh,
Yuzi Liu,
Ian N. Hammock,
Zixi Li,
Clayton T. DeVault,
Amy Butcher,
Aaron P. Esser-Kahn,
David D. Awschalom,
Nazar Delegan,
Peter C. Maurer,
F. Joseph Heremans,
Alexander A. High
Abstract:
Diamond has superlative material properties for a broad range of quantum and electronic technologies. However, heteroepitaxial growth of single crystal diamond remains limited, impeding integration and evolution of diamond-based technologies. Here, we directly bond single-crystal diamond membranes to a wide variety of materials including silicon, fused silica, sapphire, thermal oxide, and lithium…
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Diamond has superlative material properties for a broad range of quantum and electronic technologies. However, heteroepitaxial growth of single crystal diamond remains limited, impeding integration and evolution of diamond-based technologies. Here, we directly bond single-crystal diamond membranes to a wide variety of materials including silicon, fused silica, sapphire, thermal oxide, and lithium niobate. Our bonding process combines customized membrane synthesis, transfer, and dry surface functionalization, allowing for minimal contamination while providing pathways for near unity yield and scalability. We generate bonded crystalline membranes with thickness as low as 10 nm, sub-nm interfacial regions, and nanometer-scale thickness variability over 200 by 200 $μm^2$ areas. We measure spin coherence times $T_2$ for nitrogen-vacancy centers in bonded membranes of up to 623(21) $μ$s, suitable for advanced quantum applications. We demonstrate multiple methods for integrating high quality factor nanophotonic cavities with the diamond heterostructures, highlighting the platform versatility in quantum photonic applications. Furthermore, we show that our ultra-thin diamond membranes are compatible with total internal reflection fluorescence (TIRF) microscopy, which enables interfacing coherent diamond quantum sensors with living cells while rejecting unwanted background luminescence. The processes demonstrated herein provide a full toolkit to synthesize heterogeneous diamond-based hybrid systems for quantum and electronic technologies.
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Submitted 20 June, 2024; v1 submitted 7 June, 2023;
originally announced June 2023.
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Atomic Layer Deposition Nucleation Dependence on Diamond Surface Termination
Authors:
Jessica C. Jones,
Nazar Delegan,
F. Joseph Heremans,
Alex B. F. Martinson
Abstract:
Surface termination and interfacial interactions are critical for advanced solid-state quantum applications. In this paper, we demonstrate that atomic layer deposition (ALD) can both provide valuable insight on the chemical environment of the surface, having sufficient sensitivity to distinguish between the common diamond (001) surface termination types and passivate these interfaces as desired. W…
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Surface termination and interfacial interactions are critical for advanced solid-state quantum applications. In this paper, we demonstrate that atomic layer deposition (ALD) can both provide valuable insight on the chemical environment of the surface, having sufficient sensitivity to distinguish between the common diamond (001) surface termination types and passivate these interfaces as desired. We selected diamond substrates exhibiting both smooth and anomalously rough surfaces to probe the effect of morphology on ALD nucleation. We use high resolution in situ spectroscopic ellipsometry to monitor the surface reaction with sub-angstrom resolution, to evaluate the nucleation of an ALD Al2O3 process as a function of different ex and in situ treatments to the diamond surface. In situ water dosing and high vacuum annealing provided the most favorable environment for nucleation of dimethylaluminum isopropoxide and water ALD. Hydrogen termination passivated both smooth and rough surfaces while triacid cleaning passivated the smooth surface only, with striking effectiveness.
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Submitted 26 April, 2023;
originally announced April 2023.
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Detecting spin bath polarization with quantum quench phase shifts of single spins in diamond
Authors:
Paul C. Jerger,
Yu-Xin Wang,
Mykyta Onizhuk,
Benjamin S. Soloway,
Michael T. Solomon,
Christopher Egerstrom,
F. Joseph Heremans,
Giulia Galli,
Aashish A. Clerk,
David D. Awschalom
Abstract:
Single-qubit sensing protocols can be used to measure qubit-bath coupling parameters. However, for sufficiently large coupling, the sensing protocol itself perturbs the bath, which is predicted to result in a characteristic response in the sensing measurements. Here, we observe this bath perturbation, also known as a quantum quench, by preparing the nuclear spin bath of a nitrogen-vacancy (NV) cen…
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Single-qubit sensing protocols can be used to measure qubit-bath coupling parameters. However, for sufficiently large coupling, the sensing protocol itself perturbs the bath, which is predicted to result in a characteristic response in the sensing measurements. Here, we observe this bath perturbation, also known as a quantum quench, by preparing the nuclear spin bath of a nitrogen-vacancy (NV) center in polarized initial states and performing phase-resolved spin echo measurements on the NV electron spin. These measurements reveal a time-dependent phase determined by the initial state of the bath. We derive the relationship between sensor phase and Gaussian spin bath polarization, and apply it to reconstruct both the axial and transverse polarization components. Using this insight, we optimize the transfer efficiency of our dynamic nuclear polarization sequence. This technique for directly measuring bath polarization may assist in preparing high-fidelity quantum memory states, improving nanoscale NMR methods, and investigating non-Gaussian quantum baths.
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Submitted 3 March, 2023;
originally announced March 2023.
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Purcell enhancement of erbium ions in TiO$_{2}$ on silicon nanocavities
Authors:
Alan M. Dibos,
Michael T. Solomon,
Sean E. Sullivan,
Manish K. Singh,
Kathryn E. Sautter,
Connor P. Horn,
Gregory D. Grant,
Yulin Lin,
Jianguo Wen,
F. Joseph Heremans,
Supratik Guha,
David D. Awschalom
Abstract:
Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects such as erbium suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Many of the traditional hosts for erbium ions are not amenable to d…
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Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects such as erbium suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Many of the traditional hosts for erbium ions are not amenable to direct incorporation with existing integrated photonics platforms, limiting scalable fabrication of qubit-based devices. Here we present a scalable approach towards CMOS-compatible telecom qubits by using erbium-doped titanium dioxide thin films grown atop silicon-on-insulator substrates. From this heterostructure, we have fabricated one-dimensional photonic crystal cavities demonstrating quality factors in excess of $5\times10^{4}$ and corresponding Purcell-enhanced optical emission rates of the erbium ensembles in excess of 200. This easily fabricated materials platform represents an important step towards realizing telecom quantum memories in a scalable qubit architecture compatible with mature silicon technologies.
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Submitted 20 April, 2022;
originally announced April 2022.
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Tunable and Transferable Diamond Membranes for Integrated Quantum Technologies
Authors:
Xinghan Guo,
Nazar Delegan,
Jonathan C. Karsch,
Zixi Li,
Tianle Liu,
Robert Shreiner,
Amy Butcher,
David D. Awschalom,
F. Joseph Heremans,
Alexander A. High
Abstract:
Color centers in diamond are widely explored as qubits in quantum technologies. However, challenges remain in the effective and efficient integration of these diamond-hosted qubits in device heterostructures. Here, nanoscale-thick uniform diamond membranes are synthesized via "smart-cut" and isotopically (12C) purified overgrowth. These membranes have tunable thicknesses (demonstrated 50 nm to 250…
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Color centers in diamond are widely explored as qubits in quantum technologies. However, challenges remain in the effective and efficient integration of these diamond-hosted qubits in device heterostructures. Here, nanoscale-thick uniform diamond membranes are synthesized via "smart-cut" and isotopically (12C) purified overgrowth. These membranes have tunable thicknesses (demonstrated 50 nm to 250 nm), are deterministically transferable, have bilaterally atomically flat surfaces (Rq <= 0.3 nm), and bulk-diamond-like crystallinity. Color centers are synthesized via both implantation and in-situ overgrowth incorporation. Within 110 nm thick membranes, individual germanium-vacancy (GeV-) centers exhibit stable photoluminescence at 5.4 K and average optical transition linewidths as low as 125 MHz. The room temperature spin coherence of individual nitrogen-vacancy (NV-) centers shows Ramsey spin dephasing times (T2*) and Hahn echo times (T2) as long as 150 us and 400 us, respectively. This platform enables the straightforward integration of diamond membranes that host coherent color centers into quantum technologies.
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Submitted 23 September, 2021;
originally announced September 2021.
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Parasitic erbium photoluminescence in commercial telecom fiber optical components
Authors:
Gary Wolfowicz,
F. Joseph Heremans,
David D. Awschalom
Abstract:
Noiseless optical components are critical for applications ranging from metrology to quantum communication. Here we characterize several commercial telecom C-band fiber components for parasitic noise using a tunable laser. We observe the spectral signature of trace concentrations of erbium in all devices from the underlying optical crystals including YVO4, LiNbO3, TeO2 and AMTIR glass. Due to the…
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Noiseless optical components are critical for applications ranging from metrology to quantum communication. Here we characterize several commercial telecom C-band fiber components for parasitic noise using a tunable laser. We observe the spectral signature of trace concentrations of erbium in all devices from the underlying optical crystals including YVO4, LiNbO3, TeO2 and AMTIR glass. Due to the long erbium lifetime, these signals are challenging to mitigate at the single photon level in the telecom range, and suggests the need for higher purity optical crystals.
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Submitted 13 August, 2021;
originally announced August 2021.
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Photoluminescence spectra of point defects in semiconductors: validation of first principles calculations
Authors:
Yu **,
Marco Govoni,
Gary Wolfowicz,
Sean E. Sullivan,
F. Joseph Heremans,
David D. Awschalom,
Giulia Galli
Abstract:
Optically and magnetically active point defects in semiconductors are interesting platforms for the development of solid-state quantum technologies. Their optical properties are usually probed by measuring photoluminescence spectra, which provide information on excitation energies and on the interaction of electrons with lattice vibrations. We present a combined computational and experimental stud…
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Optically and magnetically active point defects in semiconductors are interesting platforms for the development of solid-state quantum technologies. Their optical properties are usually probed by measuring photoluminescence spectra, which provide information on excitation energies and on the interaction of electrons with lattice vibrations. We present a combined computational and experimental study of photoluminescence spectra of defects in diamond and SiC, aimed at assessing the validity of theoretical and numerical approximations used in first principles calculations, including the use of the Franck-Condon principle and the displaced harmonic oscillator approximation. We focus on prototypical examples of solid-state qubits, the divacancy centers in SiC and the nitrogen-vacancy in diamond, and we report computed photoluminescence spectra as a function of temperature that are in very good agreement with the measured ones. As expected we find that the use of hybrid functionals leads to more accurate results than semilocal functionals. Interestingly our calculations show that constrained density functional theory (CDFT) and time-dependent hybrid DFT perform equally well in describing the excited state potential energy surface of triplet states; our findings indicate that CDFT, a relatively cheap computational approach, is sufficiently accurate for the calculations of photoluminescence spectra of the defects studied here. Finally, we find that only by correcting for finite-size effects and extrapolating to the dilute limit, one can obtain a good agreement between theory and experiment. Our results provide a detailed validation protocol of first principles calculations of photoluminescence spectra, necessary both for the interpretation of experiments and for robust predictions of the electronic properties of point defects in semiconductors.
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Submitted 9 August, 2021; v1 submitted 16 June, 2021;
originally announced June 2021.
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Scanning X-ray Diffraction Microscopy for Diamond Quantum Sensing
Authors:
Mason C. Marshall,
David F. Phillips,
Matthew J. Turner,
Mark J. H. Ku,
Tao Zhou,
Nazar Delegan,
F. Joseph Heremans,
Martin V. Holt,
Ronald L. Walsworth
Abstract:
Understanding nano- and micro-scale crystal strain in CVD diamond is crucial to the advancement of diamond quantum technologies. In particular, the presence of such strain and its characterization present a challenge to diamond-based quantum sensing and information applications -- as well as for future dark matter detectors where directional information of incoming particles is encoded in crystal…
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Understanding nano- and micro-scale crystal strain in CVD diamond is crucial to the advancement of diamond quantum technologies. In particular, the presence of such strain and its characterization present a challenge to diamond-based quantum sensing and information applications -- as well as for future dark matter detectors where directional information of incoming particles is encoded in crystal strain. Here, we exploit nanofocused scanning X-ray diffraction microscopy to quantitatively measure crystal deformation from defects in diamond with high spatial and strain resolution. Combining information from multiple Bragg angles allows stereoscopic three-dimensional modeling of strain feature geometry; the diffraction results are validated via comparison to optical measurements of the strain tensor based on spin-state-dependent spectroscopy of ensembles of nitrogen vacancy (NV) centers in the diamond. Our results demonstrate both strain and spatial resolution sufficient for directional detection of dark matter via X-ray measurement of crystal strain, and provide a promising tool for diamond growth analysis and improvement of defect-based sensing.
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Submitted 14 October, 2022; v1 submitted 15 March, 2021;
originally announced March 2021.
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Quantum engineering with hybrid magnonics systems and materials
Authors:
D. D. Awschalom,
C. H. R. Du,
R. He,
F. J. Heremans,
A. Hoffmann,
J. T. Hou,
H. Kurebayashi,
Y. Li,
L. Liu,
V. Novosad,
J. Sklenar,
S. E. Sullivan,
D. Sun,
H. Tang,
V. Tiberkevich,
C. Trevillian,
A. W. Tsen,
L. R. Weiss,
W. Zhang,
X. Zhang,
L. Zhao,
C. W. Zollitsch
Abstract:
Quantum technology has made tremendous strides over the past two decades with remarkable advances in materials engineering, circuit design and dynamic operation. In particular, the integration of different quantum modules has benefited from hybrid quantum systems, which provide an important pathway for harnessing the different natural advantages of complementary quantum systems and for engineering…
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Quantum technology has made tremendous strides over the past two decades with remarkable advances in materials engineering, circuit design and dynamic operation. In particular, the integration of different quantum modules has benefited from hybrid quantum systems, which provide an important pathway for harnessing the different natural advantages of complementary quantum systems and for engineering new functionalities. This review focuses on the current frontiers with respect to utilizing magnetic excitatons or magnons for novel quantum functionality. Magnons are the fundamental excitations of magnetically ordered solid-state materials and provide great tunability and flexibility for interacting with various quantum modules for integration in diverse quantum systems. The concomitant rich variety of physics and material selections enable exploration of novel quantum phenomena in materials science and engineering. In addition, the relative ease of generating strong coupling and forming hybrid dynamic systems with other excitations makes hybrid magnonics a unique platform for quantum engineering. We start our discussion with circuit-based hybrid magnonic systems, which are coupled with microwave photons and acoustic phonons. Subsequently, we are focusing on the recent progress of magnon-magnon coupling within confined magnetic systems. Next we highlight new opportunities for understanding the interactions between magnons and nitrogen-vacancy centers for quantum sensing and implementing quantum interconnects. Lastly, we focus on the spin excitations and magnon spectra of novel quantum materials investigated with advanced optical characterization.
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Submitted 5 February, 2021;
originally announced February 2021.
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Generalized scaling of spin qubit coherence in over 12,000 host materials
Authors:
Shun Kanai,
F. Joseph Heremans,
Hosung Seo,
Gary Wolfowicz,
Christopher P. Anderson,
Sean E. Sullivan,
Giulia Galli,
David D. Awschalom,
Hideo Ohno
Abstract:
Spin defect centers with long quantum coherence times ($T_2$) are key solid-state platforms for a variety of quantum applications. Recently, cluster correlation expansion (CCE) techniques have emerged as a powerful tool to simulate the $T_2$ of defect electron spins in these solid-state systems with good accuracy. Here, based on CCE, we uncover an algebraic expression for $T_2$ generalized for hos…
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Spin defect centers with long quantum coherence times ($T_2$) are key solid-state platforms for a variety of quantum applications. Recently, cluster correlation expansion (CCE) techniques have emerged as a powerful tool to simulate the $T_2$ of defect electron spins in these solid-state systems with good accuracy. Here, based on CCE, we uncover an algebraic expression for $T_2$ generalized for host compounds with dilute nuclear spin baths, which enables a quantitative and comprehensive materials exploration with a near instantaneous estimate of the coherence. We investigate more than 12,000 host compounds at natural isotopic abundance, and find that silicon carbide (SiC), a prominent widegap semiconductor for quantum applications, possesses the longest coherence times among widegap non-chalcogenides. In addition, more than 700 chalcogenides are shown to possess a longer $T_2$ than SiC. We suggest new potential host compounds with promisingly long $T_2$ up to 47 ms, and pave the way to explore unprecedented functional materials for quantum applications.
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Submitted 4 February, 2021;
originally announced February 2021.
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Qubit guidelines for solid-state spin defects
Authors:
Gary Wolfowicz,
F. Joseph Heremans,
Christopher P. Anderson,
Shun Kanai,
Hosung Seo,
Adam Gali,
Giulia Galli,
David D. Awschalom
Abstract:
Defects with associated electron and nuclear spins in solid-state materials have a long history relevant to quantum information science going back to the first spin echo experiments with silicon dopants in the 1950s. Since the turn of the century, the field has rapidly spread to a vast array of defects and host crystals applicable to quantum communication, sensing, and computing. From simple spin…
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Defects with associated electron and nuclear spins in solid-state materials have a long history relevant to quantum information science going back to the first spin echo experiments with silicon dopants in the 1950s. Since the turn of the century, the field has rapidly spread to a vast array of defects and host crystals applicable to quantum communication, sensing, and computing. From simple spin resonance to long-distance remote entanglement, the complexity of working with spin defects is fast advancing, and requires an in-depth understanding of their spin, optical, charge, and material properties in this modern context. This is especially critical for discovering new relevant systems dedicated to specific quantum applications. In this review, we therefore expand upon all the key components with an emphasis on the properties of defects and the host material, on engineering opportunities and other pathways for improvement. Finally, this review aims to be as defect and material agnostic as possible, with some emphasis on optical emitters, providing a broad guideline for the field of solid-state spin defects for quantum information.
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Submitted 30 October, 2020;
originally announced October 2020.
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High-Q Nanophotonic Resonators on Diamond Membranes using Templated Atomic Layer Deposition of TiO2
Authors:
Amy Butcher,
Xinghan Guo,
Robert Shreiner,
Nazar Delegan,
Kai Hao,
Peter J. Duda III,
David D. Awschalom,
F. Joseph Heremans,
Alexander A. High
Abstract:
Integrating solid-state quantum emitters with nanophotonic resonators is essential for efficient spin-photon interfacing and optical networking applications. While diamond color centers have proven to be excellent candidates for emerging quantum technologies, their integration with optical resonators remains challenging. Conventional approaches based on etching resonators into diamond often negati…
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Integrating solid-state quantum emitters with nanophotonic resonators is essential for efficient spin-photon interfacing and optical networking applications. While diamond color centers have proven to be excellent candidates for emerging quantum technologies, their integration with optical resonators remains challenging. Conventional approaches based on etching resonators into diamond often negatively impact color center performance and offer low device yield. Here, we developed an integrated photonics platform based on templated atomic layer deposition of TiO2 on diamond membranes. Our fabrication method yields high-performance nanophotonic devices while avoiding etching wavelength-scale features into diamond. Moreover, this technique generates highly reproducible optical resonances and can be iterated on individual diamond samples, a unique processing advantage. Our approach is suitable for a broad range of both wavelengths and substrates and can enable high-cooperativity interfacing between cavity photons and coherent defects in diamond or silicon carbide, rare earth ions, or other material systems.
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Submitted 30 May, 2020; v1 submitted 7 April, 2020;
originally announced April 2020.
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Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide
Authors:
Berk Diler,
Samuel J. Whiteley,
Christopher P. Anderson,
Gary Wolfowicz,
Marie E. Wesson,
Edward S. Bielejec,
F. Joseph Heremans,
David Awschalom
Abstract:
Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindered by material quality resulting in limited coherent control. In this work, we implant Cr into commer…
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Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindered by material quality resulting in limited coherent control. In this work, we implant Cr into commercial 4H-SiC and show optimal defect activation after annealing above 1600 C. We measure an ensemble optical hole linewidth of 31 MHz, an order of magnitude improvement compared to as-grown samples. An in-depth exploration of optical and spin dynamics reveals efficient spin polarization, coherent control, and readout with high fidelity (79%). We report T1 times greater than 1 second at cryogenic temperatures (15 K) with a T2* = 317 nanoseconds and a T2 = 81 microseconds, where spin dephasing times are currently limited by spin-spin interactions within the defect ensemble. Our results demonstrate the potential of Cr4+ in SiC as an extrinsic, optically active spin qubit.
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Submitted 18 September, 2019;
originally announced September 2019.
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Vanadium spin qubits as telecom quantum emitters in silicon carbide
Authors:
Gary Wolfowicz,
Christopher P. Anderson,
Berk Diler,
Oleg G. Poluektov,
F. Joseph Heremans,
David D. Awschalom
Abstract:
Solid state quantum emitters with spin registers are promising platforms for quantum communication, yet few emit in the narrow telecom band necessary for low-loss fiber networks. Here we create and isolate near-surface single vanadium dopants in silicon carbide (SiC) with stable and narrow emission in the O-band (1278-1388 nm), with brightness allowing cavity-free detection in a wafer-scale CMOS-c…
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Solid state quantum emitters with spin registers are promising platforms for quantum communication, yet few emit in the narrow telecom band necessary for low-loss fiber networks. Here we create and isolate near-surface single vanadium dopants in silicon carbide (SiC) with stable and narrow emission in the O-band (1278-1388 nm), with brightness allowing cavity-free detection in a wafer-scale CMOS-compatible material. In vanadium ensembles, we characterize the complex d1 orbital physics in all five available sites in 4H-SiC and 6H-SiC. The optical transitions are sensitive to mass shifts from local silicon and carbon isotopes, enabling optically resolved nuclear spin registers. Optically detected magnetic resonance in the ground and excited orbital states reveals a variety of hyperfine interactions with the vanadium nuclear spin and clock transitions for quantum memories. Finally, we demonstrate coherent quantum control of the spin state. These results provide a path for telecom emitters in the solid-state for quantum applications.
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Submitted 26 August, 2019;
originally announced August 2019.
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Atomic layer deposition of titanium nitride for quantum circuits
Authors:
A. Shearrow,
G. Koolstra,
S. J. Whiteley,
N. Earnest,
P. S. Barry,
F. J. Heremans,
D. D. Awschalom,
E. Shirokoff,
D. I. Schuster
Abstract:
Superconducting thin films with high intrinsic kinetic inductance are of great importance for photon detectors, achieving strong coupling in hybrid systems, and protected qubits. We report on the performance of titanium nitride resonators, patterned on thin films (9-110 nm) grown by atomic layer deposition, with sheet inductances of up to 234 pH/square. For films thicker than 14 nm, quality factor…
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Superconducting thin films with high intrinsic kinetic inductance are of great importance for photon detectors, achieving strong coupling in hybrid systems, and protected qubits. We report on the performance of titanium nitride resonators, patterned on thin films (9-110 nm) grown by atomic layer deposition, with sheet inductances of up to 234 pH/square. For films thicker than 14 nm, quality factors measured in the quantum regime range from 0.4 to 1.0 million and are likely limited by dielectric two-level systems. Additionally, we show characteristic impedances up to 28 kOhm, with no significant degradation of the internal quality factor as the impedance increases. These high impedances correspond to an increased single photon coupling strength of 24 times compared to a 50 Ohm resonator, transformative for hybrid quantum systems and quantum sensing.
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Submitted 24 August, 2018; v1 submitted 17 August, 2018;
originally announced August 2018.
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Correlating dynamic strain and photoluminescence of solid-state defects with stroboscopic x-ray diffraction microscopy
Authors:
S. J. Whiteley,
F. J. Heremans,
G. Wolfowicz,
D. D. Awschalom,
M. V. Holt
Abstract:
Control of local lattice perturbations near optically-active defects in semiconductors is a key step to harnessing the potential of solid-state qubits for quantum information science and nanoscale sensing. We report the development of a stroboscopic scanning X-ray diffraction microscopy approach for real-space imaging of dynamic strain used in correlation with microscopic photoluminescence measure…
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Control of local lattice perturbations near optically-active defects in semiconductors is a key step to harnessing the potential of solid-state qubits for quantum information science and nanoscale sensing. We report the development of a stroboscopic scanning X-ray diffraction microscopy approach for real-space imaging of dynamic strain used in correlation with microscopic photoluminescence measurements. We demonstrate this technique in 4H-SiC, which hosts long-lifetime room temperature vacancy spin defects. Using nano-focused X-ray photon pulses synchronized to a surface acoustic wave launcher, we achieve an effective time resolution of 100 ps at a 25 nm spatial resolution to map micro-radian dynamic lattice curvatures. The acoustically induced lattice distortions near an engineered scattering structure are correlated with enhanced photoluminescence responses of optically-active SiC quantum defects driven by local piezoelectric effects. These results demonstrate a unique route for directly imaging local strain in nanomechanical structures and quantifying dynamic structure-function relationships in materials under realistic operating conditions.
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Submitted 29 July, 2019; v1 submitted 14 August, 2018;
originally announced August 2018.
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Probing spin-phonon interactions in silicon carbide with Gaussian acoustics
Authors:
Samuel J. Whiteley,
Gary Wolfowicz,
Christopher P. Anderson,
Alexandre Bourassa,
He Ma,
Meng Ye,
Gerwin Koolstra,
Kevin J. Satzinger,
Martin V. Holt,
F. Joseph Heremans,
Andrew N. Cleland,
David I. Schuster,
Giulia Galli,
David D. Awschalom
Abstract:
Hybrid spin-mechanical systems provide a platform for integrating quantum registers and transducers. Efficient creation and control of such systems require a comprehensive understanding of the individual spin and mechanical components as well as their mutual interactions. Point defects in silicon carbide (SiC) offer long-lived, optically addressable spin registers in a wafer-scale material with lo…
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Hybrid spin-mechanical systems provide a platform for integrating quantum registers and transducers. Efficient creation and control of such systems require a comprehensive understanding of the individual spin and mechanical components as well as their mutual interactions. Point defects in silicon carbide (SiC) offer long-lived, optically addressable spin registers in a wafer-scale material with low acoustic losses, making them natural candidates for integration with high quality factor mechanical resonators. Here, we show Gaussian focusing of a surface acoustic wave in SiC, characterized by a novel stroboscopic X-ray diffraction imaging technique, which delivers direct, strain amplitude information at nanoscale spatial resolution. Using ab initio calculations, we provide a more complete picture of spin-strain coupling for various defects in SiC with C3v symmetry. This reveals the importance of shear for future device engineering and enhanced spin-mechanical coupling. We demonstrate all-optical detection of acoustic paramagnetic resonance without microwave magnetic fields, relevant to sensing applications. Finally, we show mechanically driven Autler-Townes splittings and magnetically forbidden Rabi oscillations. These results offer a basis for full strain control of three-level spin systems.
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Submitted 4 August, 2018; v1 submitted 29 April, 2018;
originally announced April 2018.
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Optical charge state control of spin defects in 4H-SiC
Authors:
Gary Wolfowicz,
Christopher P. Anderson,
Andrew L. Yeats,
Samuel J. Whiteley,
Jens Niklas,
Oleg G. Poluektov,
F. Joseph Heremans,
David D. Awschalom
Abstract:
Defects in silicon carbide (SiC) have emerged as a favorable platform for optically-active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability of the qubits. We investigate this charge state control for two major spin qubits in 4H-SiC, the…
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Defects in silicon carbide (SiC) have emerged as a favorable platform for optically-active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability of the qubits. We investigate this charge state control for two major spin qubits in 4H-SiC, the divacancy (VV) and silicon vacancy (Vsi), obtaining bidirectional optical charge conversion between the bright and dark states of these defects. We measure increased photoluminescence from VV ensembles by up to three orders of magnitude using near-ultraviolet excitation, depending on the substrate, and without degrading the electron spin coherence time. This charge conversion remains stable for hours at cryogenic temperatures, allowing spatial and persistent patterning of the relative charge state populations. We develop a comprehensive model of the defects and optical processes involved, offering a strong basis to improve material design and to develop quantum applications in SiC.
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Submitted 26 May, 2017;
originally announced May 2017.
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Holonomic Quantum Control by Coherent Optical Excitation in Diamond
Authors:
Brian B. Zhou,
Paul C. Jerger,
V. O. Shkolnikov,
F. Joseph Heremans,
Guido Burkard,
David D. Awschalom
Abstract:
Although geometric phases in quantum evolution were historically overlooked, their active control now stimulates strategies for constructing robust quantum technologies. Here, we demonstrate arbitrary single-qubit holonomic gates from a single cycle of non-adiabatic evolution, eliminating the need to concatenate two separate cycles. Our method varies the amplitude, phase, and detuning of a two-ton…
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Although geometric phases in quantum evolution were historically overlooked, their active control now stimulates strategies for constructing robust quantum technologies. Here, we demonstrate arbitrary single-qubit holonomic gates from a single cycle of non-adiabatic evolution, eliminating the need to concatenate two separate cycles. Our method varies the amplitude, phase, and detuning of a two-tone optical field to control the non-Abelian geometric phase acquired by a nitrogen-vacancy center in diamond over a coherent excitation cycle. We demonstrate the enhanced robustness of detuned gates to excited-state decoherence and provide insights for optimizing fast holonomic control in dissipative quantum systems.
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Submitted 2 October, 2017; v1 submitted 1 May, 2017;
originally announced May 2017.
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Hybrid nanodiamond-YIG systems for efficient quantum information processing and nanoscale sensing
Authors:
Paolo Andrich,
Charles F. de las Casas,
Xiaoying Liu,
Hope L. Bretscher,
Jonson R. Berman,
F. Joseph Heremans,
Paul F. Nealey,
David D. Awschalom
Abstract:
The nitrogen-vacancy (NV) center in diamond has been extensively studied in recent years for its remarkable quantum coherence properties that make it an ideal candidate for room temperature quantum computing and quantum sensing schemes. However, these schemes rely on spin-spin dipolar interactions, which require the NV centers to be within a few nanometers from each other while still separately ad…
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The nitrogen-vacancy (NV) center in diamond has been extensively studied in recent years for its remarkable quantum coherence properties that make it an ideal candidate for room temperature quantum computing and quantum sensing schemes. However, these schemes rely on spin-spin dipolar interactions, which require the NV centers to be within a few nanometers from each other while still separately addressable, or to be in close proximity of the diamond surface, where their coherence properties significantly degrade. Here we demonstrate a method for overcoming these limitations using a hybrid yttrium iron garnet (YIG)-nanodiamond quantum system constructed with the help of directed assembly and transfer printing techniques. We show that YIG spin-waves can amplify the oscillating field of a microwave source by more than two orders of magnitude and efficiently mediate its coherent interactions with an NV center ensemble. These results demonstrate that spin-waves in ferromagnets can be used as quantum buses for enhanced, long-range qubit interactions, paving the way to ultra-efficient manipulation and coupling of solid state defects in hybrid quantum networks and sensing devices.
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Submitted 25 January, 2017;
originally announced January 2017.
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Accelerated quantum control using superadiabatic dynamics in a solid-state lambda system
Authors:
Brian B. Zhou,
Alexandre Baksic,
Hugo Ribeiro,
Christopher G. Yale,
F. Joseph Heremans,
Paul C. Jerger,
Adrian Auer,
Guido Burkard,
Aashish A. Clerk,
David D. Awschalom
Abstract:
Adiabatic evolutions find widespread utility in applications to quantum state engineering, geometric quantum computation, and quantum simulation. Although offering robustness to experimental imperfections, adiabatic processes are susceptible to decoherence due to their long evolution time. A general strategy termed "shortcuts to adiabaticity" (STA) aims to remedy this vulnerability by designing fa…
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Adiabatic evolutions find widespread utility in applications to quantum state engineering, geometric quantum computation, and quantum simulation. Although offering robustness to experimental imperfections, adiabatic processes are susceptible to decoherence due to their long evolution time. A general strategy termed "shortcuts to adiabaticity" (STA) aims to remedy this vulnerability by designing fast dynamics to reproduce the results of slow, adiabatic evolutions. Here, we implement a novel STA technique known as "superadiabatic transitionless driving" (SATD) to speed up stimulated Raman adiabatic passage (STIRAP) in a solid-state lambda (Λ) system. Utilizing optical transitions to a dissipative excited state in the nitrogen-vacancy (NV) center in diamond, we demonstrate the accelerated performance of different shortcut trajectories for population transfer and for the initialization and transfer of coherent superpositions. We reveal that SATD protocols exhibit robustness to dissipation and experimental uncertainty, and can be optimized when these effects are present. These results motivate STA as a promising tool for controlling open quantum systems comprising individual or hybrid nanomechanical, superconducting, and photonic elements in the solid state.
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Submitted 21 July, 2016;
originally announced July 2016.
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Optical manipulation of Berry phase in a solid-state spin qubit
Authors:
Christopher G. Yale,
F. Joseph Heremans,
Brian B. Zhou,
Adrian Auer,
Guido Burkard,
David D. Awschalom
Abstract:
The phase relation between quantum states represents an essential resource for the storage and processing of quantum information. While quantum phases are commonly controlled dynamically by tuning energetic interactions, utilizing geometric phases that accumulate during cyclic evolution may offer superior robustness to noise. To date, demonstrations of geometric phase control in solid-state system…
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The phase relation between quantum states represents an essential resource for the storage and processing of quantum information. While quantum phases are commonly controlled dynamically by tuning energetic interactions, utilizing geometric phases that accumulate during cyclic evolution may offer superior robustness to noise. To date, demonstrations of geometric phase control in solid-state systems rely on microwave fields that have limited spatial resolution. Here, we demonstrate an all-optical method based on stimulated Raman adiabatic passage to accumulate a geometric phase, the Berry phase, in an individual nitrogen-vacancy (NV) center in diamond. Using diffraction-limited laser light, we guide the NV center's spin along loops on the Bloch sphere to enclose arbitrary Berry phase and characterize these trajectories through time-resolved state tomography. We investigate the limits of this control due to loss of adiabiaticity and decoherence, as well as its robustness to noise intentionally introduced into the experimental control parameters, finding its resilience to be independent of the amount of Berry phase enclosed. These techniques set the foundation for optical geometric manipulation in future implementations of photonic networks of solid state qubits linked and controlled by light.
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Submitted 31 July, 2015;
originally announced July 2015.
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Three-dimensional localization of spins in diamond using 12C implantation
Authors:
Kenichi Ohno,
F. Joseph Heremans,
Charles F. de las Casas,
Bryan. A. Myers,
Benjamín J. Aleman,
Ania C. Bleszynski Jayich,
David D. Awschalom
Abstract:
We demonstrate three-dimensional localization of a single nitrogen-vacancy (NV) center in diamond by combining nitrogen do** during growth with a post-growth 12C implantation technique that facilitates vacancy formation in the crystal. We show that the NV density can be controlled by the implantation dose without necessitating increase of the nitrogen incorporation. By implanting a large 12C dos…
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We demonstrate three-dimensional localization of a single nitrogen-vacancy (NV) center in diamond by combining nitrogen do** during growth with a post-growth 12C implantation technique that facilitates vacancy formation in the crystal. We show that the NV density can be controlled by the implantation dose without necessitating increase of the nitrogen incorporation. By implanting a large 12C dose through nanoscale apertures, we can localize an individual NV center within a volume of (~180 nm)**3 at a deterministic position while reproducibly preserving a coherence time (T2) > 300 μs. Our approach enables integration of NV centers into diamond nanostructures to realize scalable spin-sensing devices as well as coherent spin coupling mediated by photons and phonons.
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Submitted 28 May, 2014;
originally announced May 2014.
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All-optical control of a solid-state spin using coherent dark states
Authors:
Christopher G. Yale,
Bob B. Buckley,
David J. Christle,
Guido Burkard,
F. Joseph Heremans,
Lee C. Bassett,
David D. Awschalom
Abstract:
The study of individual quantum systems in solids, for use as quantum bits (qubits) and probes of decoherence, requires protocols for their initialization, unitary manipulation, and readout. In many solid-state quantum systems, these operations rely on disparate techniques that can vary widely depending on the particular qubit structure. One such qubit, the nitrogen-vacancy (NV) center spin in dia…
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The study of individual quantum systems in solids, for use as quantum bits (qubits) and probes of decoherence, requires protocols for their initialization, unitary manipulation, and readout. In many solid-state quantum systems, these operations rely on disparate techniques that can vary widely depending on the particular qubit structure. One such qubit, the nitrogen-vacancy (NV) center spin in diamond, can be initialized and read out through its special spin selective intersystem crossing, while microwave electron spin resonance (ESR) techniques provide unitary spin rotations. Instead, we demonstrate an alternative, fully optical approach to these control protocols in an NV center that does not rely on its intersystem crossing. By tuning an NV center to an excited-state spin anticrossing at cryogenic temperatures, we use coherent population trap** and stimulated Raman techniques to realize initialization, readout, and unitary manipulation of a single spin. Each of these techniques can be directly performed along any arbitrarily-chosen quantum basis, removing the need for extra control steps to map the spin to and from a preferred basis. Combining these protocols, we perform measurements of the NV center's spin coherence, a demonstration of this full optical control. Consisting solely of optical pulses, these techniques enable control within a smaller footprint and within photonic networks. Likewise, this approach obviates the need for both ESR manipulation and spin addressability through the intersystem crossing. This method could therefore be applied to a wide range of potential solid-state qubits, including those which currently lack a means to be addressed.
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Submitted 6 March, 2013; v1 submitted 26 February, 2013;
originally announced February 2013.
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Engineering shallow spins in diamond with nitrogen delta-do**
Authors:
Kenichi Ohno,
F. Joseph Heremans,
Lee C. Bassett,
Bryan A. Myers,
David M. Toyli,
Ania C. Bleszynski Jayich,
Christopher J. Palmstrom,
David D. Awschalom
Abstract:
We demonstrate nanometer-precision depth control of nitrogen-vacancy (NV) center creation near the surface of synthetic diamond using an in situ nitrogen delta-do** technique during plasma-enhanced chemical vapor deposition. Despite their proximity to the surface, doped NV centers with depths (d) ranging from 5 - 100 nm display long spin coherence times, T2 > 100 \mus at d = 5 nm and T2 > 600 \m…
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We demonstrate nanometer-precision depth control of nitrogen-vacancy (NV) center creation near the surface of synthetic diamond using an in situ nitrogen delta-do** technique during plasma-enhanced chemical vapor deposition. Despite their proximity to the surface, doped NV centers with depths (d) ranging from 5 - 100 nm display long spin coherence times, T2 > 100 \mus at d = 5 nm and T2 > 600 \mus at d \geq 50 nm. The consistently long spin coherence observed in such shallow NV centers enables applications such as atomic-scale external spin sensing and hybrid quantum architectures.
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Submitted 11 July, 2012;
originally announced July 2012.
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Electrical Tuning of Single Nitrogen-Vacancy Center Optical Transitions Enhanced by Photoinduced Fields
Authors:
L. C. Bassett,
F. J. Heremans,
C. G. Yale,
B. B. Buckley,
D. D. Awschalom
Abstract:
We demonstrate precise control over the zero-phonon optical transition energies of individual nitrogen-vacancy (NV) centers in diamond by applying multiaxis electric fields, via the dc Stark effect. The Stark shifts display surprising asymmetries that we attribute to an enhancement and rectification of the local electric field by photoionized charge traps in the diamond. Using this effect, we tune…
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We demonstrate precise control over the zero-phonon optical transition energies of individual nitrogen-vacancy (NV) centers in diamond by applying multiaxis electric fields, via the dc Stark effect. The Stark shifts display surprising asymmetries that we attribute to an enhancement and rectification of the local electric field by photoionized charge traps in the diamond. Using this effect, we tune the excited-state orbitals of strained NV centers to degeneracy and vary the resulting degenerate optical transition frequency by >10 GHz, a scale comparable to the inhomogeneous frequency distribution. This technique will facilitate the integration of NV-center spins within photonic networks.
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Submitted 10 January, 2012; v1 submitted 19 April, 2011;
originally announced April 2011.
