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Universal logic with encoded spin qubits in silicon
Authors:
Aaron J. Weinstein,
Matthew D. Reed,
Aaron M. Jones,
Reed W. Andrews,
David Barnes,
Jacob Z. Blumoff,
Larken E. Euliss,
Kevin Eng,
Bryan Fong,
Sieu D. Ha,
Daniel R. Hulbert,
Clayton Jackson,
Michael Jura,
Tyler E. Keating,
Joseph Kerckhoff,
Andrey A. Kiselev,
Justine Matten,
Golam Sabbir,
Aaron Smith,
Jeffrey Wright,
Matthew T. Rakher,
Thaddeus D. Ladd,
Matthew G. Borselli
Abstract:
Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control crosstalk, and configurable insensitivity to certain error sources. Key difficulties are that encoded entangling gates require a large number of control pulses and high-…
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Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control crosstalk, and configurable insensitivity to certain error sources. Key difficulties are that encoded entangling gates require a large number of control pulses and high-yielding quantum dot arrays. Here we show a device made using the single-layer etch-defined gate electrode architecture that achieves both the required functional yield needed for full control and the coherence necessary for thousands of calibrated exchange pulses to be applied. We measure an average two-qubit Clifford fidelity of $97.1 \pm 0.2\%$ with randomized benchmarking. We also use interleaved randomized benchmarking to demonstrate the controlled-NOT gate with $96.3 \pm 0.7\%$ fidelity, SWAP with $99.3 \pm 0.5\%$ fidelity, and a specialized entangling gate that limits spreading of leakage with $93.8 \pm 0.7\%$ fidelity.
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Submitted 7 February, 2022;
originally announced February 2022.
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A flexible design platform for Si/SiGe exchange-only qubits with low disorder
Authors:
Wonill Ha,
Sieu D. Ha,
Maxwell D. Choi,
Yan Tang,
Adele E. Schmitz,
Mark P. Levendorf,
Kangmu Lee,
James M. Chappell,
Tower S. Adams,
Daniel R. Hulbert,
Edwin Acuna,
Ramsey S. Noah,
Justine W. Matten,
Michael P. Jura,
Jeffrey A. Wright,
Matthew T. Rakher,
Matthew G. Borselli
Abstract:
Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that ar…
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Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that are patterned simultaneously on one topographical plane and subsequently connected by vias to interconnect metal lines. The process design enables non-trivial layouts as well as flexibility in gate dimensions, material selection, and additional device features such as for rf qubit control. We show that the SLEDGE process has reduced electrostatic disorder with respect to traditional overlap** gate devices with lift-off metallization, and we present spin coherent exchange oscillations and single qubit blind randomized benchmarking data.
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Submitted 22 July, 2021;
originally announced July 2021.
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Optimization of Quantum-dot Qubit Fabrication via Machine Learning
Authors:
Antonio B. Mei,
Ivan Milosavljevic,
Amanda L. Simpson,
Valerie A. Smetanka,
Colin P. Feeney,
Shay M. Seguin,
Sieu D. Ha,
Wonill Ha,
Matthew D. Reed
Abstract:
Precise nanofabrication represents a critical challenge to develo** semiconductor quantum-dot qubits for practical quantum computation. Here, we design and train a convolutional neural network to interpret in-line scanning electron micrographs and quantify qualitative features affecting device functionality. The high-throughput strategy is exemplified by optimizing a model lithographic process w…
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Precise nanofabrication represents a critical challenge to develo** semiconductor quantum-dot qubits for practical quantum computation. Here, we design and train a convolutional neural network to interpret in-line scanning electron micrographs and quantify qualitative features affecting device functionality. The high-throughput strategy is exemplified by optimizing a model lithographic process within a five-dimensional design space and by demonstrating a new approach to address lithographic proximity effects. The present results emphasize the benefits of machine learning for develo** robust processes, shortening development cycles, and enforcing quality control during qubit fabrication.
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Submitted 15 December, 2020;
originally announced December 2020.
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Magnetic Gradient Fluctuations from Quadrupolar $^{73}$Ge in Si/SiGe Exchange-Only Qubits
Authors:
J. Kerckhoff,
B. Sun,
B. H. Fong,
C. Jones,
A. A. Kiselev,
D. W. Barnes,
R. S. Noah,
E. Acuna,
M. Akmal,
S. D. Ha,
J. A. Wright,
B. J. Thomas,
C. A. C. Jackson,
L. F. Edge,
K. Eng,
R. S. Ross,
T. D. Ladd
Abstract:
We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar precession of the $^{73}$Ge nuclei play a key role in the spin-echo decay time $T_2$, with a characteristic dependence on magnetic field and the width…
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We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar precession of the $^{73}$Ge nuclei play a key role in the spin-echo decay time $T_2$, with a characteristic dependence on magnetic field and the width of the Si quantum well. The $^{73}$Ge noise peaks appear at the fundamental and first harmonic of the $^{73}$Ge Larmor resonance, superimposed over $1/f$ noise due to $^{29}$Si dipole-dipole dynamics, and are dependent on material epitaxy and applied magnetic field. These results may inform the needs of dynamical decoupling when using Si/SiGe quantum dots as qubits in quantum information processing devices.
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Submitted 17 September, 2020;
originally announced September 2020.
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Quantifying error and leakage in an encoded Si/SiGe triple-dot qubit
Authors:
R. W. Andrews,
C. Jones,
M. D. Reed,
A. M. Jones,
S. D. Ha,
M. P. Jura,
J. Kerckhoff,
M. Levendorf,
S. Meenehan,
S. T. Merkel,
A. Smith,
B. Sun,
A. J. Weinstein,
M. T. Rakher,
T. D. Ladd,
M. G. Borselli
Abstract:
Quantum computation requires qubits that satisfy often-conflicting criteria, including scalable control and long-lasting coherence. One approach to creating a suitable qubit is to operate in an encoded subspace of several physical qubits. Though such encoded qubits may be particularly susceptible to leakage out of their computational subspace, they can be insensitive to certain noise processes and…
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Quantum computation requires qubits that satisfy often-conflicting criteria, including scalable control and long-lasting coherence. One approach to creating a suitable qubit is to operate in an encoded subspace of several physical qubits. Though such encoded qubits may be particularly susceptible to leakage out of their computational subspace, they can be insensitive to certain noise processes and can also allow logical control with a single type of entangling interaction while maintaining favorable features of the underlying physical system. Here we demonstrate a qubit encoded in a subsystem of three coupled electron spins confined in gated, isotopically enhanced silicon quantum dots. Using a modified "blind" randomized benchmarking protocol that determines both computational and leakage errors, we show that unitary operations have an average total error of 0.35%, with 0.17% of that coming from leakage driven by interactions with substrate nuclear spins. This demonstration utilizes only the voltage-controlled exchange interaction for qubit manipulation and highlights the operational benefits of encoded subsystems, heralding the realization of high-quality encoded multi-qubit operations.
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Submitted 6 December, 2018;
originally announced December 2018.
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Spin-Blockade Spectroscopy of Si/SiGe Quantum Dots
Authors:
A. M. Jones,
E. J. Pritchett,
E. H. Chen,
T. E. Keating,
R. W. Andrews,
J. Z. Blumoff,
L. A. De Lorenzo,
K. Eng,
S. D. Ha,
A. A. Kiselev,
S. M. Meenehan,
S. T. Merkel,
J. A. Wright,
L. F. Edge,
R. S. Ross,
M. T. Rakher,
M. G. Borselli,
A. Hunter
Abstract:
We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the limits of both large and small splittings. We perform this technique on an undoped, accumulation-mode Si/SiGe triple-quantum dot and find that the mea…
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We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the limits of both large and small splittings. We perform this technique on an undoped, accumulation-mode Si/SiGe triple-quantum dot and find that the measured splitting varies smoothly as a function of confinement gate biases. Not only does this demonstration prove the value of having an $in~situ$ excited-state measurement technique as part of a standard tune-up procedure, it also suggests that in typical Si/SiGe quantum dot devices, spin-blockade can be limited by lateral orbital excitation energy rather than valley splitting.
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Submitted 21 September, 2018;
originally announced September 2018.
