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Voltage-tunable superconducting resonators: a platform for random access quantum memory
Authors:
Kasra Sardashti,
Matthieu C. Dartiailh,
Joseph Yuan,
Sean Hart,
Patryk Gumann,
Javad Shabani
Abstract:
In quantum computing architectures, one important factor is the trade-off between the need to couple qubits to each other and to an external drive and the need to isolate them well enough in order to protect the information for an extended period of time. In the case of superconducting circuits, one approach is to utilize fixed frequency qubits coupled to coplanar waveguide resonators such that th…
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In quantum computing architectures, one important factor is the trade-off between the need to couple qubits to each other and to an external drive and the need to isolate them well enough in order to protect the information for an extended period of time. In the case of superconducting circuits, one approach is to utilize fixed frequency qubits coupled to coplanar waveguide resonators such that the system can be kept in a configuration that is relatively insensitive to noise. Here, we propose a scalable voltage-tunable quantum memory (QuMem) design concept compatible with superconducting qubit platforms. Our design builds on the recent progress in fabrication of Josephson field effect transistors (JJ-FETs) which use InAs quantum wells. The JJ-FET is incorporated into a tunable coupler between a transmission line and a high-quality resonator in order to control the overall inductance of the coupler. A full isolation of the high-quality resonator can be achieved by turning off the JJ-FET. This could allow for long coherence times and protection of the quantum information inside the storage cavity. The proposed design would facilitate the implementation of random access memory for storage of quantum information in between computational gate operations.
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Submitted 15 June, 2020;
originally announced June 2020.
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NMR study of optically hyperpolarized phosphorus donor nuclei in silicon
Authors:
P. Gumann,
H. Haas,
S. Sheldon,
L. Zhu,
M. L. W. Thewalt,
D. G. Cory,
C. Ramanathan
Abstract:
We use above-bandgap optical excitation, via a 1047 nm laser, to hyperpolarize the $^{31}$P spins in low-doped (N$_D =6\times10^{15}$ cm$^{-3}$) natural abundance silicon at 4.2 K and 6.7 T, and inductively detect the resulting NMR signal. The $30$ kHz spectral linewidth observed is dramatically larger than the 600 Hz linewidth observed from a $^{28}$Si-enriched silicon crystal. We show that the o…
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We use above-bandgap optical excitation, via a 1047 nm laser, to hyperpolarize the $^{31}$P spins in low-doped (N$_D =6\times10^{15}$ cm$^{-3}$) natural abundance silicon at 4.2 K and 6.7 T, and inductively detect the resulting NMR signal. The $30$ kHz spectral linewidth observed is dramatically larger than the 600 Hz linewidth observed from a $^{28}$Si-enriched silicon crystal. We show that the observed broadening is consistent with previous ENDOR results showing discrete isotope mass effect contributions to the donor hyperfine coupling. A secondary source of broadening is likely due to variations in the local strain, induced by the random distribution of different isotopes in natural silicon. The nuclear spin T$_1$ and the build-up time for the optically-induced $^{31}$P hyperpolarization in the natural abundance silicon sample were observed to be $178\pm47$ s and $69\pm6$ s respectively, significantly shorter than the values previously measured in $^{28}$Si-enriched samples under the same conditions. We also measured the T$_1$ and hyperpolarization build-up time for the $^{31}$P signal in natural abundance silicon at 9.4 T to be $54\pm31$ s and $13\pm2$ s respectively. The shorter build-up and nuclear spin T$_1$ times at high field are likely due to the shorter electron-spin T$_1$, which drives nuclear spin relaxation via non-secular hyperfine interactions. At 6.7 T, the phosphorus nuclear spin T$_{2}$ was measured to be $16.7\pm1.6$ ms at 4.2 K, a factor of 4 shorter than in $^{28}$Si-enriched crystals. This was observed to further shorten to $1.9\pm0.4$ ms in the presence of the infra-red laser.
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Submitted 23 July, 2018;
originally announced July 2018.
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Inductive measurement of optically hyperpolarized phosphorous donor nuclei in an isotopically-enriched silicon-28 crystal
Authors:
P. Gumann,
O. Patange,
C. Ramanathan,
H. Haas,
O. Moussa,
M. L. W. Thewalt,
H. Riemann,
N. V. Abrosimov,
P. Becker,
H. -J. Pohl,
K. M. Itoh,
D. G. Cory
Abstract:
We experimentally demonstrate the inductive readout of optically hyperpolarized phosphorus-31 donor nuclear spins in an isotopically enriched silicon-28 crystal. The concentration of phosphorus donors in the crystal was 1.5 x 10$^{15}$ cm$^{-3}$, three orders of magnitude lower than has previously been detected via direct inductive detection. The signal-to-noise ratio measured in a single free ind…
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We experimentally demonstrate the inductive readout of optically hyperpolarized phosphorus-31 donor nuclear spins in an isotopically enriched silicon-28 crystal. The concentration of phosphorus donors in the crystal was 1.5 x 10$^{15}$ cm$^{-3}$, three orders of magnitude lower than has previously been detected via direct inductive detection. The signal-to-noise ratio measured in a single free induction decay from a 1 cm$^3$ sample ($\approx 10^{15}$ spins) was 113. By transferring the sample to an X-band ESR spectrometer, we were able to obtain a lower bound for the nuclear spin polarization at 1.7 K of 64 %. The $^{31}$P-T$_{2}$ measured with a Hahn echo sequence was 420 ms at 1.7 K, which was extended to 1.2 s with a Carr Purcell cycle. The T$_1$ of the $^{31}$P nuclear spins at 1.7 K is extremely long and could not be determined, as no decay was observed even on a timescale of 4.5 hours. Optical excitation was performed with a 1047 nm laser, which provided above bandgap excitation of the silicon. The build-up of the hyperpolarization at 4.2 K followed a single exponential with a characteristic time of 577 s, while the build-up at 1.7 K showed bi-exponential behavior with characteristic time constants of 578 s and 5670 s.
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Submitted 12 December, 2014; v1 submitted 20 July, 2014;
originally announced July 2014.
