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Discovery of T center-like quantum defects in silicon
Authors:
Yihuang Xiong,
Jiongzhi Zheng,
Shay McBride,
Xueyue Zhang,
Sinéad M. Griffin,
Geoffroy Hautier
Abstract:
Quantum technologies would benefit from the development of high performance quantum defects acting as single-photon emitters or spin-photon interface. Finding such a quantum defect in silicon is especially appealing in view of its favorable spin bath and high processability. While some color centers in silicon have been emerging in quantum applications, there is still a need to search and develop…
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Quantum technologies would benefit from the development of high performance quantum defects acting as single-photon emitters or spin-photon interface. Finding such a quantum defect in silicon is especially appealing in view of its favorable spin bath and high processability. While some color centers in silicon have been emerging in quantum applications, there is still a need to search and develop new high performance quantum emitters. Searching a high-throughput computational database of more than 22,000 charged complex defects in silicon, we identify a series of defects formed by a group III element combined with carbon ((A-C)$\rm _{Si}$ with A=B,Al,Ga,In,Tl) and substituting on a silicon site. These defects are analogous structurally, electronically and chemically to the well-known T center in silicon ((C-C-H)$\rm_{Si}$) and their optical properties are mainly driven by an unpaired electron in a carbon $p$ orbital. They all emit in the telecom and some of these color centers show improved properties compared to the T center in terms of computed radiative lifetime or emission efficiency. We also show that the synthesis of hydrogenated T center-like defects followed by a dehydrogenation annealing step could be an efficient way of synthesis. All the T center-like defects show a higher symmetry than the T center making them easier to align with magnetic fields. Our work motivates further studies on the synthesis and control of this new family of quantum defects, and also demonstrates the use of high-throughput computational screening to detect new complex quantum defects.
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Submitted 8 May, 2024;
originally announced May 2024.
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A substitutional quantum defect in WS$_2$ discovered by high-throughput computational screening and fabricated by site-selective STM manipulation
Authors:
John C. Thomas,
Wei Chen,
Yihuang Xiong,
Bradford A. Barker,
Junze Zhou,
Weiru Chen,
Antonio Rossi,
Nolan Kelly,
Zhuohang Yu,
Da Zhou,
Shalini Kumari,
Edward S. Barnard,
Joshua A. Robinson,
Mauricio Terrones,
Adam Schwartzberg,
D. Frank Ogletree,
Eli Rotenberg,
Marcus M. Noack,
Sinéad Griffin,
Archana Raja,
David A. Strubbe,
Gian-Marco Rignanese,
Alexander Weber-Bargioni,
Geoffroy Hautier
Abstract:
Point defects in two-dimensional materials are of key interest for quantum information science. However, the space of possible defects is immense, making the identification of high-performance quantum defects extremely challenging. Here, we perform high-throughput (HT) first-principles computational screening to search for promising quantum defects within WS$_2$, which present localized levels in…
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Point defects in two-dimensional materials are of key interest for quantum information science. However, the space of possible defects is immense, making the identification of high-performance quantum defects extremely challenging. Here, we perform high-throughput (HT) first-principles computational screening to search for promising quantum defects within WS$_2$, which present localized levels in the band gap that can lead to bright optical transitions in the visible or telecom regime. Our computed database spans more than 700 charged defects formed through substitution on the tungsten or sulfur site. We found that sulfur substitutions enable the most promising quantum defects. We computationally identify the neutral cobalt substitution to sulfur (Co$_{\rm S}^{0}$) as very promising and fabricate it with scanning tunneling microscopy (STM). The Co$_{\rm S}^{0}$ electronic structure measured by STM agrees with first principles and showcases an attractive new quantum defect. Our work shows how HT computational screening and novel defect synthesis routes can be combined to design new quantum defects.
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Submitted 14 September, 2023;
originally announced September 2023.
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High-throughput identification of spin-photon interfaces in silicon
Authors:
Yihuang Xiong,
Céline Bourgois,
Natalya Sheremetyeva,
Wei Chen,
Diana Dahliah,
Hanbin Song,
Sinéad M. Griffin,
Alp Sipahigil,
Geoffroy Hautier
Abstract:
Color centers in host semiconductors are prime candidates for spin-photon interfaces that would enable numerous quantum applications. The discovery of an optimal spin-photon interface in silicon would move quantum information technologies towards a mature semiconductor technology. However, the space of possible charged defects in a host is very large, making the identification of promising quantum…
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Color centers in host semiconductors are prime candidates for spin-photon interfaces that would enable numerous quantum applications. The discovery of an optimal spin-photon interface in silicon would move quantum information technologies towards a mature semiconductor technology. However, the space of possible charged defects in a host is very large, making the identification of promising quantum defects from experiments only extremely challenging. Here, we use high-throughput first principles computational screening to identify spin-photon interfaces among more than 1000 substitutional and interstitial charged defects in silicon. We evaluate the most promising defects by considering their optical properties, spin multiplicity, and formation energies. The use of a single-shot hybrid functional approach is critical in enabling the screening of a large number of defects with a reasonable accuracy in the calculated optical and electronic properties. We identify three new promising spin-photon interface as potential bright emitters in the telecom band: $\rm Ti_{i}^{+}$, $\rm Fe_{i}^{0}$, and $\rm Ru_{i}^{0}$. These candidates are excited through defect-bound excitons, stressing the importance of considering these type of defects in silicon if operations in the telecom band is targeted. Our work paves the way to further large scale computational screening for quantum defects in silicon and other hosts.
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Submitted 2 March, 2023;
originally announced March 2023.
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Midgap state requirements for optically active quantum defects
Authors:
Yihuang Xiong,
Milena Mathew,
Sinéad M. Griffin,
Alp Sipahigil,
Geoffroy Hautier
Abstract:
Optically active quantum defects play an important role in quantum sensing, computing, and communication. The electronic structure and the single-particle energy levels of these quantum defects in the semiconducting host have been used to understand their opto-electronic properties. Optical excitations that are central for their initialization and readout are linked to transitions between occupied…
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Optically active quantum defects play an important role in quantum sensing, computing, and communication. The electronic structure and the single-particle energy levels of these quantum defects in the semiconducting host have been used to understand their opto-electronic properties. Optical excitations that are central for their initialization and readout are linked to transitions between occupied and unoccupied single-particle states. It is commonly assumed that only quantum defects introducing levels well within the band gap and far from the band edges are of interest for quantum technologies as they mimic an isolated atom embedded in the host. In this perspective, we contradict this common assumption and show that optically active defects with energy levels close to the band edges can display similar properties. We highlight quantum defects that are excited through transitions to or from a band-like level (bound exciton), such as the T center and Se$\rm _{Si}^+$ in silicon. We also present how defects such as the silicon divacancy in diamond can involve transitions between localized levels that are above the conduction band or below the valence band. Loosening the commonly assumed requirement on the electronic structure of quantum defects offers opportunities in quantum defects design and discovery, especially in smaller band gap hosts such as silicon. We discuss the challenges in terms of operating temperature for photoluminescence or radiative lifetime in this regime. We also highlight how these alternative type of defects bring their own needs in terms of theoretical developments and fundamental understanding. This perspective clarifies the electronic structure requirement for quantum defects and will facilitate the identification and design of new color centers for quantum applications especially driven by first principles computations.
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Submitted 21 February, 2023;
originally announced February 2023.
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New Horizons: Scalar and Vector Ultralight Dark Matter
Authors:
D. Antypas,
A. Banerjee,
C. Bartram,
M. Baryakhtar,
J. Betz,
J. J. Bollinger,
C. Boutan,
D. Bowring,
D. Budker,
D. Carney,
G. Carosi,
S. Chaudhuri,
S. Cheong,
A. Chou,
M. D. Chowdhury,
R. T. Co,
J. R. Crespo López-Urrutia,
M. Demarteau,
N. DePorzio,
A. V. Derbin,
T. Deshpande,
M. D. Chowdhury,
L. Di Luzio,
A. Diaz-Morcillo,
J. M. Doyle
, et al. (104 additional authors not shown)
Abstract:
The last decade has seen unprecedented effort in dark matter model building at all mass scales coupled with the design of numerous new detection strategies. Transformative advances in quantum technologies have led to a plethora of new high-precision quantum sensors and dark matter detection strategies for ultralight ($<10\,$eV) bosonic dark matter that can be described by an oscillating classical,…
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The last decade has seen unprecedented effort in dark matter model building at all mass scales coupled with the design of numerous new detection strategies. Transformative advances in quantum technologies have led to a plethora of new high-precision quantum sensors and dark matter detection strategies for ultralight ($<10\,$eV) bosonic dark matter that can be described by an oscillating classical, largely coherent field. This white paper focuses on searches for wavelike scalar and vector dark matter candidates.
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Submitted 28 March, 2022;
originally announced March 2022.
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First principles study of the T-center in Silicon
Authors:
Diana Dhaliah,
Yihuang Xiong,
Alp Sipahigil,
Sinéad M. Griffin,
Geoffroy Hautier
Abstract:
The T-center in silicon is a well-known carbon-based color center that has been recently considered for quantum technology applications. Using first principles computations, we show that the excited state is formed by a defect-bound exciton made of a localized defect state occupied by an electron to which a hole is bound. The localized state is of strong carbon \textit{p} character and reminiscent…
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The T-center in silicon is a well-known carbon-based color center that has been recently considered for quantum technology applications. Using first principles computations, we show that the excited state is formed by a defect-bound exciton made of a localized defect state occupied by an electron to which a hole is bound. The localized state is of strong carbon \textit{p} character and reminiscent of the localization of the unpaired electron in the ethyl radical molecule. The radiative lifetime for the defect-bound exciton is calculated to be on the order of $μ$s, much longer than other quantum defects such as the NV center in diamond and in agreement with experiments. The longer lifetime is associated with the small transition dipole moment as a result of the very different nature of the localized and delocalized states forming the defect-bound exciton. Finally, we use first principles calculations to assess the stability of the T-center. We find the T-center to be stable against decomposition into simpler defects when kee** the stoichiometry fixed. However, we identify that the T-center is easily prone to (de)hydrogenation and so requires very precise annealing conditions (temperature and atmosphere) to be efficiently formed.
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Submitted 30 March, 2022; v1 submitted 8 February, 2022;
originally announced February 2022.
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Microscopic Theory of Magnetic Disorder-Induced Decoherence in Superconducting Nb Films
Authors:
Evan Sheridan,
Thomas F. Harrelson,
Eric Sivonxay,
Kristin A. Persson,
M. Virginia P. Altoé,
Irfan Siddiqi,
D. Frank Ogletree,
David I. Santiago,
Sinéad M. Griffin
Abstract:
The performance of superconducting qubits is orders of magnitude below what is expected from theoretical estimates based on the loss tangents of the constituent bulk materials. This has been attributed to the presence of uncontrolled surface oxides formed during fabrication which can introduce defects and impurities that create decoherence channels. Here, we develop an ab initio Shiba theory to in…
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The performance of superconducting qubits is orders of magnitude below what is expected from theoretical estimates based on the loss tangents of the constituent bulk materials. This has been attributed to the presence of uncontrolled surface oxides formed during fabrication which can introduce defects and impurities that create decoherence channels. Here, we develop an ab initio Shiba theory to investigate the microscopic origin of magnetic-induced decoherence in niobium thin film superconductors and the formation of native oxides. Our ab initio calculations encompass the roles of structural disorder, stoichiometry, and strain on the formation of decoherence-inducing local spin moments. With parameters derived from these first-principles calculations we develop an effective quasi-classical model of magnetic-induced losses in the superconductor. We identify d-channel losses (associated with oxygen vacancies) as especially parasitic, resulting in a residual zero temperature surface impedance. This work provides a route to connecting atomic scale properties of superconducting materials and macroscopic decoherence channels affecting quantum systems.
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Submitted 23 November, 2021;
originally announced November 2021.
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Elucidating the local atomic and electronic structure of amorphous oxidized superconducting niobium films
Authors:
Thomas F. Harrelson,
Evan Sheridan,
Ellis Kennedy,
John Vinson,
Alpha T. N'Diaye,
M. Virginia P. Altoé,
Adam Schwartzberg,
Irfan Siddiqi,
D. Frank Ogletree,
Mary C. Scott,
Sinéad M. Griffin
Abstract:
Qubits made from superconducting materials are a mature platform for quantum information science application such as quantum computing. However, materials-based losses are now a limiting factor in reaching the coherence times needed for applications. In particular, knowledge of the atomistic structure and properties of the circuit materials is needed to identify, understand, and mitigate materials…
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Qubits made from superconducting materials are a mature platform for quantum information science application such as quantum computing. However, materials-based losses are now a limiting factor in reaching the coherence times needed for applications. In particular, knowledge of the atomistic structure and properties of the circuit materials is needed to identify, understand, and mitigate materials-based decoherence channels. In this work we characterize the atomic structure of the native oxide film formed on Nb resonators by comparing fluctuation electron microscopy experiments to density functional theory calculations, finding that an amorphous layer consistent with an Nb$_2$O$_5$ stoichiometry. Comparing X-ray absorption measurements at the Oxygen K edge with first-principles calculations, we find evidence of d-type magnetic impurities in our sample, known to cause impedance in proximal superconductors. This work identifies the structural and chemical composition of the oxide layer grown on Nb superconductors, and shows that soft X-ray absorption can fingerprint magnetic impurities in these superconducting systems.
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Submitted 22 November, 2021;
originally announced November 2021.
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Theoretical investigation of decoherence channels in athermal phonon sensors
Authors:
Thomas F. Harrelson,
Ibrahim Hajar,
Omar A. Ashour,
Sinéad M. Griffin
Abstract:
The creation and evolution of nonequilibrium phonons is central in applications ranging from cosmological particle searches to decoherence processes in qubits. However, the fundamental understanding of decoherence pathways for athermal phonon distributions in solid-state systems remains an open question. Using first-principles calculations, we investigate the primary decay channels of athermal pho…
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The creation and evolution of nonequilibrium phonons is central in applications ranging from cosmological particle searches to decoherence processes in qubits. However, the fundamental understanding of decoherence pathways for athermal phonon distributions in solid-state systems remains an open question. Using first-principles calculations, we investigate the primary decay channels of athermal phonons in two technologically relevant semiconductors -- Si and GaAs. We quantify the contributions of anharmonic, isotopic, and interfacial scattering in these materials. From this, we construct a model to estimate the thermal power in a readout scheme as a function of time. We discuss the implication of our results on noise limitations in current phonon sensor designs and strategies for improving coherence in next-generation phonon sensors.
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Submitted 17 October, 2023; v1 submitted 22 September, 2021;
originally announced September 2021.
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Localization and reduction of superconducting quantum coherent circuit losses
Authors:
M. Virginia P. Altoé,
Archan Banerjee,
Cassidy Berk,
Ahmed Hajr,
Adam Schwartzberg,
Chengyu Song,
Mohammed Al Ghadeer,
Shaul Aloni,
Michael J. Elowson,
John Mark Kreikebaum,
Ed K. Wong,
Sinead Griffin,
Saleem Rao,
Alexander Weber-Bargioni,
Andrew M. Minor,
David I. Santiago,
Stefano Cabrini,
Irfan Siddiqi,
D. Frank Ogletree
Abstract:
Quantum sensing and computation can be realized with superconducting microwave circuits. Qubits are engineered quantum systems of capacitors and inductors with non-linear Josephson junctions. They operate in the single-excitation quantum regime, photons of $27 μ$eV at 6.5 GHz. Quantum coherence is fundamentally limited by materials defects, in particular atomic-scale parasitic two-level systems (T…
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Quantum sensing and computation can be realized with superconducting microwave circuits. Qubits are engineered quantum systems of capacitors and inductors with non-linear Josephson junctions. They operate in the single-excitation quantum regime, photons of $27 μ$eV at 6.5 GHz. Quantum coherence is fundamentally limited by materials defects, in particular atomic-scale parasitic two-level systems (TLS) in amorphous dielectrics at circuit interfaces.[1] The electric fields driving oscillating charges in quantum circuits resonantly couple to TLS, producing phase noise and dissipation. We use coplanar niobium-on-silicon superconducting resonators to probe decoherence in quantum circuits. By selectively modifying interface dielectrics, we show that most TLS losses come from the silicon surface oxide, and most non-TLS losses are distributed throughout the niobium surface oxide. Through post-fabrication interface modification we reduced TLS losses by 85% and non-TLS losses by 72%, obtaining record single-photon resonator quality factors above 5 million and approaching a regime where non-TLS losses are dominant.
[1]Müller, C., Cole, J. H. & Lisenfeld, J. Towards understanding two-level-systems in amorphous solids: insights from quantum circuits. Rep. Prog. Phys. 82, 124501 (2019)
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Submitted 14 December, 2020;
originally announced December 2020.
