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Purcell enhancement and spin spectroscopy of silicon vacancy centers in silicon carbide using an ultra-small mode-volume plasmonic cavity
Authors:
Jae-Pil So,
Jialun Luo,
Jaehong Choi,
Brendan McCullian,
Gregory D. Fuchs
Abstract:
Silicon vacancy (V$_{Si}$) centers in 4H-silicon carbide have emerged as a strong candidate for quantum networking applications due to their robust electronic and optical properties including a long spin coherence lifetime and bright, stable emission. Here, we report the integration of V$_{Si}$ centers with a plasmonic nanocavity to Purcell enhance the emission, which is critical for scalable quan…
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Silicon vacancy (V$_{Si}$) centers in 4H-silicon carbide have emerged as a strong candidate for quantum networking applications due to their robust electronic and optical properties including a long spin coherence lifetime and bright, stable emission. Here, we report the integration of V$_{Si}$ centers with a plasmonic nanocavity to Purcell enhance the emission, which is critical for scalable quantum networking. Employing a simple fabrication process, we demonstrate plasmonic cavities that support a nanoscale mode volume and exhibit an increase in the spontaneous emission rate with a measured Purcell factor of up to 48. In addition to investigating the optical resonance modes, we demonstrate that an improvement in the optical stability of the spin-preserving resonant optical transitions relative to the radiation-limited value. The results highlight the potential of nanophotonic structures for advancing quantum networking technologies and emphasizes the importance of optimizing emitter-cavity interactions for efficient quantum photonic applications.
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Submitted 8 July, 2024;
originally announced July 2024.
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Coherent Acoustic Control of Defect Orbital States in the Strong-Driving Limit
Authors:
B. A. McCullian,
V. Sharma,
H. Y. Chen,
J. C. Crossman,
E. J. Mueller,
G. D. Fuchs
Abstract:
We use a bulk acoustic wave resonator to demonstrate coherent control of the excited orbital states in a diamond nitrogen-vacancy (NV) center at cryogenic temperature. Coherent quantum control is an essential tool for understanding and mitigating decoherence. Moreover, characterizing and controlling orbital states is a central challenge for quantum networking, where optical coherence is tied to or…
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We use a bulk acoustic wave resonator to demonstrate coherent control of the excited orbital states in a diamond nitrogen-vacancy (NV) center at cryogenic temperature. Coherent quantum control is an essential tool for understanding and mitigating decoherence. Moreover, characterizing and controlling orbital states is a central challenge for quantum networking, where optical coherence is tied to orbital coherence. We study resonant multi-phonon orbital Rabi oscillations in both the frequency and time domain, extracting the strength of the orbital-phonon interactions and the coherence of the acoustically driven orbital states. We reach the strong-driving limit, where the physics is dominated by the coupling induced by the acoustic waves. We find agreement between our measurements, quantum master equation simulations, and a Landau-Zener transition model in the strong-driving limit. Using perturbation theory, we derive an expression for the orbital Rabi frequency versus acoustic drive strength that is non-perturbative in the drive strength and agrees well with our measurements for all acoustic powers. Motivated by continuous wave spin resonance-based decoherence protection schemes, we model the orbital decoherence and find good agreement between our model and our measured few-to-several nanoseconds orbital decoherence times. We discuss the outlook for orbital decoherence protection.
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Submitted 16 March, 2024;
originally announced March 2024.
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Room temperature optically detected magnetic resonance of single spins in GaN
Authors:
Jialun Luo,
Yifei Geng,
Farhan Rana,
Gregory D. Fuchs
Abstract:
Optically detected magnetic resonance (ODMR) is an efficient mechanism to readout the spin of solid-state color centers at room temperature, thus enabling spin-based quantum sensors of magnetic field, electric field, and temperature with high sensitivity and broad commercial applicability. The mechanism of room temperature ODMR is based on spin-dependent relaxation between the optically excited st…
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Optically detected magnetic resonance (ODMR) is an efficient mechanism to readout the spin of solid-state color centers at room temperature, thus enabling spin-based quantum sensors of magnetic field, electric field, and temperature with high sensitivity and broad commercial applicability. The mechanism of room temperature ODMR is based on spin-dependent relaxation between the optically excited states to the ground states, and thus it is an intrinsic property of a defect center. In this work we report that two distinct defect types exist in GaN based on their ODMR signatures. One group has small negative ODMR based on a spin in a metastable state. The second group has large (up to $\sim$30\%) positive ODMR contrast based on ground-state spin. Because GaN is a mature semiconductor with well-developed electronic technologies already developed, this defect platform is promising for integrated quantum sensing applications.
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Submitted 21 June, 2023;
originally announced June 2023.
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Strong photon-magnon coupling using a lithographically defined organic ferrimagnet
Authors:
Qin Xu,
Hil Fung Harry Cheung,
Donley S. Cormode,
Tharnier O. Puel,
Huma Yusuf,
Michael Chilcote,
Michael E. Flatté,
Ezekiel Johnston-Halperin,
Gregory D. Fuchs
Abstract:
We demonstrate a hybrid quantum system composed of superconducting resonator photons and magnons hosted by the organic-based ferrimagnet vanadium tetracyanoethylene (V[TCNE]$_x$). Our work is motivated by the challenge of scalably integrating an arbitrarily-shaped, low-dam** magnetic system with planar superconducting circuits, thus enabling a host of quantum magnonic circuit designs that were p…
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We demonstrate a hybrid quantum system composed of superconducting resonator photons and magnons hosted by the organic-based ferrimagnet vanadium tetracyanoethylene (V[TCNE]$_x$). Our work is motivated by the challenge of scalably integrating an arbitrarily-shaped, low-dam** magnetic system with planar superconducting circuits, thus enabling a host of quantum magnonic circuit designs that were previously inaccessible. For example, by leveraging the inherent properties of magnons, one can enable nonreciprocal magnon-mediated quantum devices that use magnon propagation rather than electrical current. We take advantage of the properties of V[TCNE]$_x$, which has ultra-low intrinsic dam**, can be grown at low processing temperatures on arbitrary substrates, and can be patterned via electron beam lithography. We demonstrate the scalable, lithographically integrated fabrication of hybrid quantum magnonic devices consisting of a thin-film superconducting resonator coupled to a low-dam**, thin-film V[TCNE]$_x$ microstructure. Our devices operate in the strong coupling regime, with a cooperativity as high as 1181(44) at T$\sim$0.4 K, suitable for scalable quantum circuit integration. This work paves the way for the exploration of high-cooperativity hybrid magnonic quantum devices in which magnonic circuits can be designed and fabricated as easily as electrical wires.
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Submitted 8 December, 2022;
originally announced December 2022.
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Decoherence by Optical Phonons in GaN Defect Single-Photon Emitters
Authors:
Yifei Geng,
Jialun Luo,
Len van Deurzen,
Huili,
Xing,
Debdeep Jena,
Gregory David Fuchs,
Farhan Rana
Abstract:
In most single-photon defect emitters, such as those in SiC and diamond, interaction with low-energy acoustic phonons determines the temperature dependence of the decoherence rate and the resulting broadening of the ZPL with the temperature obeys a power law. GaN hosts bright and stable single-photon emitters in the 600 nm to 700 nm wavelength range with strong ZPLs even at room temperature. In th…
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In most single-photon defect emitters, such as those in SiC and diamond, interaction with low-energy acoustic phonons determines the temperature dependence of the decoherence rate and the resulting broadening of the ZPL with the temperature obeys a power law. GaN hosts bright and stable single-photon emitters in the 600 nm to 700 nm wavelength range with strong ZPLs even at room temperature. In this work, we study the temperature dependence of the ZPL spectra of GaN SPEs integrated with solid immersion lenses with the goal of understanding the relevant decoherence mechanisms. At temperatures below ~50 K, the ZPL lineshape is found to be Gaussian and the ZPL linewidth is temperature independent and dominated by spectral diffusion. Above ~50 K, the linewidth increases monotonically with the temperature and the lineshape evolves into a Lorentzian. Quite remarkably, the temperature dependence of the linewidth does not follow a power law. We propose a model in which decoherence caused by absorption/emission of optical phonons in an elastic Raman process determines the temperature dependence of the lineshape and the linewidth. Our model explains the temperature dependence of the ZPL linewidth and lineshape in the entire 10 K to 270 K temperature range explored in this work. The ~19 meV optical phonon energy extracted by fitting the model to the data matches remarkably well the ~18 meV zone center energy of the lowest optical phonon band (E2(low)) in GaN. Our work sheds light on the mechanisms responsible for linewidth broadening in GaN SPEs. Since a low energy optical phonon band (E2(low)) is a feature of most group III-V nitrides with a wurtzite crystal structure, including hBN and AlN, we expect our proposed mechanism to play an important role in defect emitters in these materials as well.
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Submitted 29 January, 2023; v1 submitted 25 June, 2022;
originally announced June 2022.
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Quantifying NV-center Spectral Diffusion by Symmetry
Authors:
B. A. McCullian,
H. F. H. Cheung,
H. Y. Chen,
G. D. Fuchs
Abstract:
The spectrally narrow, spin-dependent optical transitions of nitrogen vacancy (NV) center defects in diamond can be harnessed for quantum networking applications. Key to such networking schemes is the generation of indistinguishable photons. Two challenges limit scalability in such systems: defect-to-defect variations of the optical transition frequencies caused by local strain variation, and spec…
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The spectrally narrow, spin-dependent optical transitions of nitrogen vacancy (NV) center defects in diamond can be harnessed for quantum networking applications. Key to such networking schemes is the generation of indistinguishable photons. Two challenges limit scalability in such systems: defect-to-defect variations of the optical transition frequencies caused by local strain variation, and spectral diffusion of the optical frequencies on repeated measurement caused by photoexcitation of nearby charge traps. In this experimental study we undertake a group theoretic approach to quantifying spectral diffusion and strain, decomposing each into components corresponding to Jahn-Teller symmetries of the NV center. We investigate correlations between the components of strain, spectral diffusion, and depth from surface, finding that strain and spectral diffusion are each dominated by longitudinal perturbations. We also find a weak negative correlation between transverse static strain and total spectral diffusion suggesting that transverse strain provides some degree of protection from spectral diffusion. Additionally, we find that spectral diffusion becomes more pronounced with increasing depth in the diamond bulk. Our symmetry-decomposed technique for quantifying spectral diffusion can be valuable for understanding how a given nanoscale charge trap environment influences spectral diffusion and for develo** strategies of mitigation.
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Submitted 22 June, 2022;
originally announced June 2022.
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Excited-state spin-resonance spectroscopy of V$_\text{B}^-$ defect centers in hexagonal boron nitride
Authors:
Nikhil Mathur,
Arunabh Mukherjee,
Xingyu Gao,
Jialun Luo,
Brendan A. McCullian,
Tongcang Li,
A. Nick Vamivakas,
Gregory D. Fuchs
Abstract:
The recently discovered spin-active boron vacancy (V$_\text{B}^-$) defect center in hexagonal boron nitride (hBN) has high contrast optically-detected magnetic resonance (ODMR) at room-temperature, with a spin-triplet ground-state that shows promise as a quantum sensor. Here we report temperature-dependent ODMR spectroscopy to probe spin within the orbital excited-state. Our experiments determine…
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The recently discovered spin-active boron vacancy (V$_\text{B}^-$) defect center in hexagonal boron nitride (hBN) has high contrast optically-detected magnetic resonance (ODMR) at room-temperature, with a spin-triplet ground-state that shows promise as a quantum sensor. Here we report temperature-dependent ODMR spectroscopy to probe spin within the orbital excited-state. Our experiments determine the excited-state spin Hamiltonian, including a room-temperature zero-field splitting of 2.1 GHz and a g-factor similar to that of the ground-state. We confirm that the resonance is associated with spin rotation in the excited-state using pulsed ODMR measurements, and we observe Zeeman-mediated level anti-crossings in both the orbital ground- and excited-state. Our observation of a single set of excited-state spin-triplet resonance from 10 to 300 K is consistent with an orbital-singlet, which has consequences for understanding the symmetry of this defect. Additionally, the excited-state ODMR has strong temperature dependence of both contrast and transverse anisotropy splitting, enabling promising avenues for quantum sensing.
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Submitted 21 November, 2021;
originally announced November 2021.
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Spectral and spatial isolation of single WSe$_2$ quantum emitters using hexagonal boron nitride wrinkles
Authors:
Raphaël S. Daveau,
Tom Vandekerckhove,
Arunabh Mukherjee,
Zefang Wang,
Jie Shan,
Kin Fai Mak,
A. Nick Vamivakas,
Gregory D. Fuchs
Abstract:
Monolayer WSe$_2$ hosts bright single-photon emitters. Because of its compliance, monolayer WSe$_2$ conforms to patterned substrates without breaking, thus creating the potential for large local strain, which is one activation mechanism of its intrinsic quantum emitters. Here, we report an approach to creating spatially and spectrally isolated quantum emitters from WSe$_2$ monolayers with few or n…
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Monolayer WSe$_2$ hosts bright single-photon emitters. Because of its compliance, monolayer WSe$_2$ conforms to patterned substrates without breaking, thus creating the potential for large local strain, which is one activation mechanism of its intrinsic quantum emitters. Here, we report an approach to creating spatially and spectrally isolated quantum emitters from WSe$_2$ monolayers with few or no detrimental sources of emission. We show that a bilayer of hexagonal boron nitride (hBN) and WSe$_2$ placed on a nanostructured substrate can be used to create and shape wrinkles that communicate local strain to the WSe$_2$, thus creating quantum emitters that are isolated from substrate features. We compare quantum emitters created directly on top of substrate features with quantum emitters forming along wrinkles and find that the spectra of the latter consist of mainly a single peak and a low background fluorescence. We also discuss possible approaches to controlling emitter position along hBN wrinkles.
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Submitted 14 May, 2020;
originally announced May 2020.
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Predicted strong coupling of solid-state spins via a single magnon mode
Authors:
Denis R. Candido,
Gregory D. Fuchs,
Ezekiel Johnston-Halperin,
Michael E. Flatté
Abstract:
We propose an approach to realize a hybrid quantum system composed of a diamond nitrogen-vacancy (NV) center spin coupled to a magnon mode of the low-dam**, low-moment organic ferrimagnet vanadium tetracyanoethylene. We derive an analytical expression for the spin-magnon cooperativity as a function of NV position under a micron-scale perpendicularly magnetized disk, and show that, surprisingly,…
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We propose an approach to realize a hybrid quantum system composed of a diamond nitrogen-vacancy (NV) center spin coupled to a magnon mode of the low-dam**, low-moment organic ferrimagnet vanadium tetracyanoethylene. We derive an analytical expression for the spin-magnon cooperativity as a function of NV position under a micron-scale perpendicularly magnetized disk, and show that, surprisingly, the cooperativity will be higher using this magnetic material than in more conventional materials with larger magnetic moments, due to in part to the reduced demagnetization field. For reasonable experimental parameters, we predict that the spin-magnon-mode coupling strength is $g\sim 10$ kHz. For isotopically pure $^{12}$C diamond we predict strong coupling of an NV spin to the unoccupied magnon mode, with cooperativity $\mathcal C=6$ for a wide range of NV spin locations within the diamond, well within the spatial precision of NV center implantation. Thus our proposal describes a practical pathway for single-spin-state-to-single-magnon-occupancy transduction and for entangling NV centers over micron length scales.
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Submitted 1 September, 2020; v1 submitted 9 March, 2020;
originally announced March 2020.
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Acoustically driving the single quantum spin transition of diamond nitrogen-vacancy centers
Authors:
H. Y. Chen,
S. A. Bhave,
G. D. Fuchs
Abstract:
Using a high quality factor 3 GHz bulk acoustic wave resonator device, we demonstrate the acoustically driven single quantum spin transition ($\left|m_{s}=0\right>\leftrightarrow\left|\pm1\right>$) for diamond NV centers and characterize the corresponding stress susceptibility. A key challenge is to disentangle the unintentional magnetic driving field generated by device current from the intention…
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Using a high quality factor 3 GHz bulk acoustic wave resonator device, we demonstrate the acoustically driven single quantum spin transition ($\left|m_{s}=0\right>\leftrightarrow\left|\pm1\right>$) for diamond NV centers and characterize the corresponding stress susceptibility. A key challenge is to disentangle the unintentional magnetic driving field generated by device current from the intentional stress driving within the device. We quantify these driving fields independently using Rabi spectroscopy before studying the more complicated case in which both are resonant with the single quantum spin transition. By building an equivalent circuit model to describe the device's current and mechanical dynamics, we quantitatively model the experiment to establish their relative contributions and compare with our results. We find that the stress susceptibility of the NV center spin single quantum transition is around $\sqrt{2}(0.5\pm0.2)$ times that for double quantum transition ($\left|+1\right>\leftrightarrow\left|-1\right>$). Although acoustic driving in the double quantum basis is valuable for quantum-enhanced sensing applications, double quantum driving lacks the ability to manipulate NV center spins out of the $\left|m_{s}=0\right>$ initialization state. Our results demonstrate that efficient all-acoustic quantum control over NV centers is possible, and is especially promising for sensing applications that benefit from the compact footprint and location selectivity of acoustic devices.
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Submitted 6 March, 2020;
originally announced March 2020.
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Engineering electron-phonon coupling of quantum defects to a semi-confocal acoustic resonator
Authors:
Huiyao Chen,
Noah F. Opondo,
Boyang Jiang,
Evan R. MacQuarrie,
Raphaël S. Daveau,
Sunil A. Bhave,
Gregory D. Fuchs
Abstract:
Diamond-based microelectromechanical systems (MEMS) enable direct coupling between the quantum states of nitrogen-vacancy (NV) centers and the phonon modes of a mechanical resonator. One example, diamond high-overtone bulk acoustic resonators (HBARs), feature an integrated piezoelectric transducer and support high-quality factor resonance modes into the GHz frequency range. The acoustic modes allo…
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Diamond-based microelectromechanical systems (MEMS) enable direct coupling between the quantum states of nitrogen-vacancy (NV) centers and the phonon modes of a mechanical resonator. One example, diamond high-overtone bulk acoustic resonators (HBARs), feature an integrated piezoelectric transducer and support high-quality factor resonance modes into the GHz frequency range. The acoustic modes allow mechanical manipulation of deeply embedded NV centers with long spin and orbital coherence times. Unfortunately, the spin-phonon coupling rate is limited by the large resonator size, $>100~μ$m, and thus strongly-coupled NV electron-phonon interactions remain out of reach in current diamond BAR devices. Here, we report the design and fabrication of a semi-confocal HBAR (SCHBAR) device on diamond (silicon carbide) with $f\cdot Q>10^{12}$($>10^{13}$). The semi-confocal geometry confines the phonon mode laterally below 10~$μ$m. This drastic reduction in modal volume enhances defect center electron-phonon coupling. For the native NV centers inside the diamond device, we demonstrate mechanically driven spin transitions and show a high strain-driving efficiency with a Rabi frequency of $(2π)2.19(14)$~MHz/V$_{p}$, which is comparable to a typical microwave antenna at the same microwave power.
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Submitted 14 June, 2019;
originally announced June 2019.
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Dual-frequency spin resonance spectroscopy of diamond nitrogen-vacancy centers in zero magnetic field
Authors:
A. K. Dmitriev,
H. Y. Chen,
G. D. Fuchs,
A. K. Vershovskii
Abstract:
The methods for controlling spin states of negatively charged nitrogen-vacancy (NV) centers using microwave (MW) or radiofrequency (RF) excitation fields for electron spin and nuclear spin transitions are effective in strong magnetic fields where a level anti-crossing (LAC) occurs. A LAC can also occur at zero field in the presence of transverse strain or electric fields in the diamond crystal, le…
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The methods for controlling spin states of negatively charged nitrogen-vacancy (NV) centers using microwave (MW) or radiofrequency (RF) excitation fields for electron spin and nuclear spin transitions are effective in strong magnetic fields where a level anti-crossing (LAC) occurs. A LAC can also occur at zero field in the presence of transverse strain or electric fields in the diamond crystal, leading to mixing of the spin states. In this paper, we investigate zero-field LAC of NV centers using dual-frequency excitation spectroscopy. Under RF modulation of the spin states, we observe sideband transitions and Autler-Townes splitting in the optically detected magnetic resonance (ODMR) spectra. Numerical simulations show that the splitting originates from Landau-Zener transition between electron spin |$\pm$1> states, which potentially provides a new way of manipulating NV center spin states in zero or weak magnetic field.
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Submitted 20 May, 2019;
originally announced May 2019.
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Orbital state manipulation of a diamond nitrogen-vacancy center using a mechanical resonator
Authors:
H. Y. Chen,
E. R. MacQuarrie,
G. D. Fuchs
Abstract:
We study the resonant optical transitions of a single nitrogen-vacancy (NV) center that is coherently dressed by a strong mechanical drive. Using a gigahertz-frequency diamond mechanical resonator that is strain-coupled to an NV center's orbital states, we demonstrate coherent Raman sidebands out to the ninth order and orbital-phonon interactions that mix the two excited-state orbital branches. Th…
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We study the resonant optical transitions of a single nitrogen-vacancy (NV) center that is coherently dressed by a strong mechanical drive. Using a gigahertz-frequency diamond mechanical resonator that is strain-coupled to an NV center's orbital states, we demonstrate coherent Raman sidebands out to the ninth order and orbital-phonon interactions that mix the two excited-state orbital branches. These interactions are spectroscopically revealed through a multi-phonon Rabi splitting of the orbital branches which scales as a function of resonator driving amplitude, and is successfully reproduced in a quantum model. Finally, we discuss the application of mechanical driving to engineering NV center orbital states.
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Submitted 20 January, 2018;
originally announced January 2018.
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Optical absorption and emission mechanisms of single defects in hexagonal boron nitride
Authors:
Nicholas R. Jungwirth,
Gregory D. Fuchs
Abstract:
We investigate the polarization selection rules of sharp zero-phonon lines (ZPLs) from isolated defects in hexagonal boron nitride (h-BN) and compare our findings with the predictions of a configuration coordinate model involving two electronic states. Our survey, which spans the spectral range ~550-740 nm, reveals that, in disagreement with a two-level model, the absorption and emission dipoles a…
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We investigate the polarization selection rules of sharp zero-phonon lines (ZPLs) from isolated defects in hexagonal boron nitride (h-BN) and compare our findings with the predictions of a configuration coordinate model involving two electronic states. Our survey, which spans the spectral range ~550-740 nm, reveals that, in disagreement with a two-level model, the absorption and emission dipoles are often misaligned. We relate the dipole misalignment angle ($Δθ$) to the ZPL Stokes shift ($ΔE$) and find that $Δθ\sim 0°$ when $ΔE$ corresponds to an allowed h-BN phonon frequency and that $0°\leqΔθ\leq 90°$ when $ΔE$ exceeds the maximum allowed h-BN phonon frequency. Consequently, a two-level configuration coordinate model succeeds at describing excitations mediated by the creation of one optical phonon but fails at describing excitations that require the creation of multiple phonons. We propose that direct excitations requiring the creation of multiple phonons are inefficient due to the low Huang-Rhys factors in h-BN and that these ZPLs are instead excited indirectly via an intermediate electronic state. This hypothesis is corroborated by polarization measurements of an individual ZPL excited with two distinct wavelengths that indicate a single ZPL may be excited by multiple mechanisms. These findings provide new insight on the nature of the optical cycle of novel defect-based single photon sources in h-BN.
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Submitted 18 April, 2017;
originally announced April 2017.
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Cooling a Mechanical Resonator with a Nitrogen-Vacancy Center Ensemble Using a Room Temperature Excited State Spin-Strain Interaction
Authors:
E. R. MacQuarrie,
M. Otten,
S. K. Gray,
G. D. Fuchs
Abstract:
We propose a protocol to dissipatively cool a room temperature mechanical resonator using a nitrogen-vacancy (NV) center ensemble. The spin ensemble is coupled to the resonator through its orbitally-averaged excited state, which has a spin-strain interaction that has not been previously characterized. We experimentally demonstrate that the spin-strain coupling in the excited state is $13.5\pm0.5$…
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We propose a protocol to dissipatively cool a room temperature mechanical resonator using a nitrogen-vacancy (NV) center ensemble. The spin ensemble is coupled to the resonator through its orbitally-averaged excited state, which has a spin-strain interaction that has not been previously characterized. We experimentally demonstrate that the spin-strain coupling in the excited state is $13.5\pm0.5$ times stronger than the ground state spin-strain coupling. We then theoretically show that this interaction combined with a high-density spin ensemble enables the cooling of a mechanical resonator from room temperature to a fraction of its thermal phonon occupancy.
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Submitted 23 June, 2016; v1 submitted 23 May, 2016;
originally announced May 2016.
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Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride
Authors:
Nicholas R. Jungwirth,
Brian Calderon,
Yanxin Ji,
Michael G. Spencer,
Michael E. Flatté,
Gregory D. Fuchs
Abstract:
We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in multilayer hexagonal boron nitride (h-BN) flakes. We observe sharp emission lines from optically active defects distributed across an energy range that exceeds 500 meV. Spectrally-resolved photon-correlation measurements verify single photon emissio…
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We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in multilayer hexagonal boron nitride (h-BN) flakes. We observe sharp emission lines from optically active defects distributed across an energy range that exceeds 500 meV. Spectrally-resolved photon-correlation measurements verify single photon emission, even when multiple emission lines are simultaneously excited within the same h-BN flake. We also present a detailed study of the temperature-dependent linewidth, spectral energy shift, and intensity for two different zero-phonon lines centered at 575 nm and 682 nm, which reveals a nearly identical temperature dependence despite a large difference in transition energy. Our temperature-dependent results are best described by a lattice vibration model that considers piezoelectric coupling to in-plane phonons. Finally, polarization spectroscopy measurements suggest that whereas the 575 nm emission line is directly excited by 532 nm excitation, the 682 nm line is excited indirectly.
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Submitted 14 May, 2016;
originally announced May 2016.
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Polarization spectroscopy of defect-based single photon sources in ZnO
Authors:
N. R. Jungwirth,
H. -S. Chang,
M. Jiang,
G. D. Fuchs
Abstract:
Point-defects in wide bandgap semiconductors are promising candidates for future applications that necessitate quantum light sources. Recently, defect-based single photon sources have been observed in ZnO that are very bright and remain photoactive from 4.5 K to room temperature. Despite several investigations, the structure and electronic states of these emitters remain unknown. In this work, we…
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Point-defects in wide bandgap semiconductors are promising candidates for future applications that necessitate quantum light sources. Recently, defect-based single photon sources have been observed in ZnO that are very bright and remain photoactive from 4.5 K to room temperature. Despite several investigations, the structure and electronic states of these emitters remain unknown. In this work, we establish a procedure to distinguish a Z dipole from an XY dipole when studying quantum emitters that are randomly oriented. Our cryogenic and room temperature polarization measurements collectively establish that these unidentified ZnO quantum emitters have a Z dipole. We show that the associated absorption and emission dipoles are parallel within experimental uncertainty for all 32 individuals studied. Additionally, we apply group theory and find that assuming the defect symmetry belongs to a point-group relevant to the ZnO wurtzite lattice, the ground and excited states are orbital singlets. These results are a significant step in identifying the structure and electronic states of defect-based single photon sources in ZnO.
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Submitted 21 October, 2015;
originally announced October 2015.
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Continuous dynamical decoupling of a single diamond nitrogen-vacancy center spin with a mechanical resonator
Authors:
E. R. MacQuarrie,
T. A. Gosavi,
S. A. Bhave,
G. D. Fuchs
Abstract:
Inhomogeneous dephasing from uncontrolled environmental noise can limit the coherence of a quantum sensor or qubit. For solid state spin qubits such as the nitrogen-vacancy (NV) center in diamond, a dominant source of environmental noise is magnetic field fluctuations due to nearby paramagnetic impurities and instabilities in a magnetic bias field. In this work, we use ac stress generated by a dia…
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Inhomogeneous dephasing from uncontrolled environmental noise can limit the coherence of a quantum sensor or qubit. For solid state spin qubits such as the nitrogen-vacancy (NV) center in diamond, a dominant source of environmental noise is magnetic field fluctuations due to nearby paramagnetic impurities and instabilities in a magnetic bias field. In this work, we use ac stress generated by a diamond mechanical resonator to engineer a dressed spin basis in which a single NV center qubit is less sensitive to its magnetic environment. For a qubit in the thermally isolated subspace of this protected basis, we prolong the dephasing time $T_2^*$ from $2.7\pm0.1$ $μ$s to $15\pm1$ $μ$s by dressing with a $Ω=581\pm2$ kHz mechanical Rabi field. Furthermore, we develop a model that quantitatively predicts the relationship between $Ω$ and $T_2^*$ in the dressed basis. Our model suggests that a combination of magnetic field fluctuations and hyperfine coupling to nearby nuclear spins limits the protected coherence time over the range of $Ω$ accessed here. We show that amplitude noise in $Ω$ will dominate the dephasing for larger driving fields.
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Submitted 5 October, 2015;
originally announced October 2015.
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Coherent Control of a Nitrogen-Vacancy Center Spin Ensemble with a Diamond Mechanical Resonator
Authors:
E. R. MacQuarrie,
T. A. Gosavi,
A. M. Moehle,
N. R. Jungwirth,
S. A. Bhave,
G. D. Fuchs
Abstract:
Coherent control of the nitrogen-vacancy (NV) center in diamond's triplet spin state has traditionally been accomplished with resonant ac magnetic fields under the constraint of the magnetic dipole selection rule, which forbids direct control of the $|-1>\leftrightarrow |+1>$ spin transition. We show that high-frequency stress resonant with the spin state splitting can coherently control NV center…
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Coherent control of the nitrogen-vacancy (NV) center in diamond's triplet spin state has traditionally been accomplished with resonant ac magnetic fields under the constraint of the magnetic dipole selection rule, which forbids direct control of the $|-1>\leftrightarrow |+1>$ spin transition. We show that high-frequency stress resonant with the spin state splitting can coherently control NV center spins within this subspace. Using a bulk-mode mechanical microresonator fabricated from single-crystal diamond, we apply intense ac stress to the diamond substrate and observe mechanically driven Rabi oscillations between the $|-1>$ and $|+1>$ states of an NV center spin ensemble. Additionally, we measure the inhomogeneous spin dephasing time ($T_{2}^{*}$) of the spin ensemble using a mechanical Ramsey sequence and compare it to the dephasing times measured with a magnetic Ramsey sequence for each of the three spin qubit combinations available within the NV center ground state. These results demonstrate coherent spin driving with a mechanical resonator and could enable the creation of a phase-sensitive $Δ$-system within the NV center ground state.
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Submitted 3 December, 2014; v1 submitted 19 November, 2014;
originally announced November 2014.
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A single-molecule approach to ZnO defect studies: single photons and single defects
Authors:
N. R. Jungwirth,
Y. Y. Pai,
H. S. Chang,
E. R. MacQuarrie,
G. D. Fuchs
Abstract:
Investigations that probe defects one at a time offer a unique opportunity to observe properties and dynamics that are washed out of ensemble measurements. Here we present confocal fluorescence measurements of individual defects in Al-doped ZnO nanoparticles and undoped ZnO sputtered films that are excited with sub-bandgap energy light. Photon correlation measurements yield both antibunching and b…
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Investigations that probe defects one at a time offer a unique opportunity to observe properties and dynamics that are washed out of ensemble measurements. Here we present confocal fluorescence measurements of individual defects in Al-doped ZnO nanoparticles and undoped ZnO sputtered films that are excited with sub-bandgap energy light. Photon correlation measurements yield both antibunching and bunching, indicative of single-photon emission from isolated defects that possess a metastable shelving state. The single-photon emission is in the range 560 - 720 nm and typically exhibits two broad spectral peaks separated by approximately 150 meV. The excited state lifetimes range from 1 - 13 ns, consistent with the finite-size and surface effects of nanoparticles and small grains. We also observe discrete jumps in the fluorescence intensity between a bright state and a dark state. The dwell times in each state are exponentially distributed and the average dwell time in the bright (dark) state does (may) depend on the power of the exciting laser. Taken together, our measurements demonstrate the utility of a single-molecule approach to semiconductor defect studies and highlight ZnO as a potential host material for single-defect based applications.
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Submitted 7 February, 2014;
originally announced February 2014.
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Mechanical spin control of nitrogen-vacancy centers in diamond
Authors:
E. R. MacQuarrie,
T. A. Gosavi,
N. R. Jungwirth,
S. A. Bhave,
G. D. Fuchs
Abstract:
As spin-based quantum technology evolves, the ability to manipulate spin with non-magnetic fields is critical - both for the development of hybrid quantum systems and for compatibility with conventional technology. Particularly useful examples are electric fields, optical fields, and mechanical lattice vibrations. The last of these represents direct spin-phonon coupling, which has garnered fundame…
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As spin-based quantum technology evolves, the ability to manipulate spin with non-magnetic fields is critical - both for the development of hybrid quantum systems and for compatibility with conventional technology. Particularly useful examples are electric fields, optical fields, and mechanical lattice vibrations. The last of these represents direct spin-phonon coupling, which has garnered fundamental interest as a potential mediator of spin-spin interactions, but could also find applications in high-stability inertial sensing. In this Letter, we demonstrate direct coupling between phonons and nitrogen-vacancy (NV) center spins in diamond by inducing spin transitions with mechanically-driven harmonic strain. The ability to control NV spins mechanically can enhance NV-based quantum metrology, grant access to all transitions within the spin-1 quantum state of the NV center, and provide a platform to study spin-phonon interactions at the level of a few interacting spins.
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Submitted 26 June, 2013;
originally announced June 2013.
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Spin Coherence During Optical Excitation of a Single NV Center in Diamond
Authors:
G. D. Fuchs,
A. L. Falk,
V. V. Dobrovitski,
D. D. Awschalom
Abstract:
We examine the quantum spin state of a single nitrogen-vacancy (NV) center in diamond at room temperature as it makes a transition from the orbital ground-state (GS) to the orbital excited-state (ES) during non-resonant optical excitation. While the fluorescence read-out of NV-center spins relies on conservation of the longitudinal spin projection during optical excitation, the question of quantum…
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We examine the quantum spin state of a single nitrogen-vacancy (NV) center in diamond at room temperature as it makes a transition from the orbital ground-state (GS) to the orbital excited-state (ES) during non-resonant optical excitation. While the fluorescence read-out of NV-center spins relies on conservation of the longitudinal spin projection during optical excitation, the question of quantum phase preservation has not been examined. Using Ramsey measurements and quantum process tomography, we establish limits on NV center spin decoherence induced during optical excitation. Treating the optical excitation and ES spin precession as a quantum process, we measure a process fidelity of F=0.87\pm0.03, which includes ES spin dephasing during measurement. Extrapolation to the moment of optical excitation yields F\approx0.95. This result demonstrates that ES spin interactions may be used as a resource for quantum control because the quantum spin state can survive incoherent orbital transitions.
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Submitted 15 November, 2011;
originally announced November 2011.
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Chip-scale nanofabrication of single spins and spin arrays in diamond
Authors:
David M. Toyli,
Christoph D. Weis,
Gregory D. Fuchs,
Thomas Schenkel,
David D. Awschalom
Abstract:
We demonstrate a technique to nanofabricate nitrogen vacancy (NV) centers in diamond based on broad-beam nitrogen implantation through apertures in electron beam lithography resist. This method enables high-throughput nanofabrication of single NV centers on sub-100 nm length scales. Secondary ion mass spectroscopy (SIMS) measurements facilitate depth profiling of the implanted nitrogen to provide…
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We demonstrate a technique to nanofabricate nitrogen vacancy (NV) centers in diamond based on broad-beam nitrogen implantation through apertures in electron beam lithography resist. This method enables high-throughput nanofabrication of single NV centers on sub-100 nm length scales. Secondary ion mass spectroscopy (SIMS) measurements facilitate depth profiling of the implanted nitrogen to provide three-dimensional characterization of the NV center spatial distribution. Measurements of NV center coherence with on-chip coplanar waveguides suggest a pathway for incorporating this scalable nanofabrication technique in future quantum applications.
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Submitted 2 July, 2010; v1 submitted 1 July, 2010;
originally announced July 2010.
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Excited-state spectroscopy using single-spin manipulation in diamond
Authors:
G. D. Fuchs,
V. V. Dobrovitski,
R. Hanson,
A. Batra,
C. D. Weis,
T. Schenkel,
D. D. Awschalom
Abstract:
We use single-spin resonant spectroscopy to study the spin structure in the orbital excited-state of a diamond nitrogen-vacancy center at room temperature. We find that the excited state spin levels have a zero-field splitting that is approximately half of the value of the ground state levels, a g-factor similar to the ground state value, and a hyperfine splitting ~20x larger than in the ground…
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We use single-spin resonant spectroscopy to study the spin structure in the orbital excited-state of a diamond nitrogen-vacancy center at room temperature. We find that the excited state spin levels have a zero-field splitting that is approximately half of the value of the ground state levels, a g-factor similar to the ground state value, and a hyperfine splitting ~20x larger than in the ground state. In addition, the width of the resonances reflects the electronic lifetime in the excited state. We also show that the spin-splitting can significantly differ between NV centers, likely due to the effects of local strain, which provides a pathway to control over the spin Hamiltonian and may be useful for quantum information processing.
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Submitted 11 June, 2008;
originally announced June 2008.
