Showing 1–41 of 41 results for author: Fu, K

Direct measure of DNA bending by quantum magnetic imaging of a nano-mechanical torque-balance

Authors: Zeeshawn Kazi, Isaac M. Shelby, Ruhee Nirodi, Joseph Turnbull, Hideyuki Watanabe, Kohei M. Itoh, Paul A. Wiggins, Kai-Mei C. Fu

Abstract: DNA flexibility is a key determinant of biological function, from nucleosome positioning to transcriptional regulation, motivating a direct measurement of the bend-torque response of individual DNA molecules. In this work, DNA bending is detected using a nano-mechanical torque balance formed by tethering a ferromagnetic nanoparticle probe by an individual DNA molecule to a diamond magnetic field i… ▽ More DNA flexibility is a key determinant of biological function, from nucleosome positioning to transcriptional regulation, motivating a direct measurement of the bend-torque response of individual DNA molecules. In this work, DNA bending is detected using a nano-mechanical torque balance formed by tethering a ferromagnetic nanoparticle probe by an individual DNA molecule to a diamond magnetic field imager. The torque exerted by the DNA in response to bending caused by an applied magnetic torque is measured using wide-field imaging of quantum defects near the surface of the diamond. Qualitative measurements of differences in DNA bio-mechanical binding configuration are demonstrated, and as a proof-of-principle, a quantitative measurement of the bend response is made for individual DNA molecules. This quantum-enabled measurement approach could be applied to characterize the bend response of biophysically relevant short DNA molecules as well as the sequence dependence of DNA bending energy. △ Less

Submitted 27 February, 2024; originally announced February 2024.

Optomechanical ring resonator for efficient microwave-optical frequency conversion

Authors: I-Tung Chen, Bingzhao Li, Seokhyeong Lee, Srivatsa Chakravarthi, Kai-Mei Fu, Mo Li

Abstract: Phonons traveling in solid-state devices are emerging as a universal excitation that can couple to different physical systems through mechanical interaction. At microwave frequencies and in solid-state materials, phonons have a similar wavelength to optical photons, enabling them to interact efficiently with light and produce strong optomechanical effects that are highly desirable for classical an… ▽ More Phonons traveling in solid-state devices are emerging as a universal excitation that can couple to different physical systems through mechanical interaction. At microwave frequencies and in solid-state materials, phonons have a similar wavelength to optical photons, enabling them to interact efficiently with light and produce strong optomechanical effects that are highly desirable for classical and quantum signal transduction between optical and microwave. It becomes conceivable to build optomechanical integrated circuits (OMIC) that guide both photons and phonons and interconnect discrete photonic and phononic devices. Here, we demonstrate an OMIC including an optomechanical ring resonator (OMR), in which infrared photons and GHz phonons co-resonate to induce significantly enhanced interconversion. The OMIC is built on a hybrid platform where wide bandgap semiconductor gallium phosphide (GaP) is used as the waveguiding material and piezoelectric zinc oxide (ZnO) is used for phonon generation. The OMR features photonic and phononic quality factors of $>1\times10^5$ and $3.2\times10^3$, respectively, and resonantly enhances the optomechanical conversion between photonic modes to achieve an internal conversion efficiency $η_i=(2.1\pm0.1)%$ and a total device efficiency $η_{tot}=0.57\times10^{-6}$ at a low acoustic pump power of 1.6 mW. The efficient conversion in OMICs enables microwave-optical transduction for many applications in quantum information processing and microwave photonics. △ Less

Submitted 16 November, 2023; v1 submitted 10 November, 2023; originally announced November 2023.

Comments: 11 pages, 4 figures

Creation of color centers in diamond by recoil implantation through dielectric films

Authors: Yuyang Han, Christian Pederson, Bethany E. Matthews, Nicholas S. Yama, Maxwell F. Parsons, Kai-Mei C. Fu

Abstract: The need of near-surface color centers in diamond for quantum technologies motivates the controlled do** of specific extrinsic impurities into the crystal lattice. Recent experiments have shown that this can be achieved by momentum transfer from a surface precursor via ion implantation, an approach known as ``recoil implantation.'' Here, we extend this technique to incorporate dielectric precurs… ▽ More The need of near-surface color centers in diamond for quantum technologies motivates the controlled do** of specific extrinsic impurities into the crystal lattice. Recent experiments have shown that this can be achieved by momentum transfer from a surface precursor via ion implantation, an approach known as ``recoil implantation.'' Here, we extend this technique to incorporate dielectric precursors for creating nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers in diamond. Specifically, we demonstrate that gallium focused-ion-beam exposure to a thin layer of silicon nitride or silicon dioxide on the diamond surface results in the introduction of both extrinsic impurities and carbon vacancies. These defects subsequently give rise to near-surface NV and SiV centers with desirable optical properties after annealing. △ Less

Submitted 28 December, 2023; v1 submitted 19 October, 2023; originally announced October 2023.

Isolation of Single Donors in ZnO

Authors: Ethan R. Hansen, Vasileios Niaouris, Bethany E. Matthews, Christian Zimmermann, Xingyi Wang, Roman Kolodka, Lasse Vines, Steven R. Spurgeon, Kai-Mei C. Fu

Abstract: The shallow donor in zinc oxide (ZnO) is a promising semiconductor spin qubit with optical access. Single indium donors are isolated in a commercial ZnO substrate using plasma focused ion beam (PFIB) milling. Quantum emitters are identified optically by spatial and frequency filtering. The indium donor assignment is based on the optical bound exciton transition energy and magnetic dependence. The… ▽ More The shallow donor in zinc oxide (ZnO) is a promising semiconductor spin qubit with optical access. Single indium donors are isolated in a commercial ZnO substrate using plasma focused ion beam (PFIB) milling. Quantum emitters are identified optically by spatial and frequency filtering. The indium donor assignment is based on the optical bound exciton transition energy and magnetic dependence. The single donor emission is intensity and frequency stable with a transition linewidth less than twice the lifetime limit. The isolation of optically stable single donors post-FIB fabrication is promising for optical device integration required for scalable quantum technologies based on single donors in direct band gap semiconductors. △ Less

Submitted 17 January, 2024; v1 submitted 9 October, 2023; originally announced October 2023.

Comments: E. R. Hansen and V. Niaouris contributed equally to this work. 15 pages, 13 figures

Optical tuning of the diamond Fermi level measured by correlated scanning probe microscopy and quantum defect spectroscopy

Authors: Christian Pederson, Rajiv Giridharagopal, Fang Zhao, Scott T. Dunham, Yevgeny Raitses, David S. Ginger, Kai-Mei C. Fu

Abstract: Quantum technologies based on quantum point defects in crystals require control over the defect charge state. Here we tune the charge state of shallow nitrogen-vacancy and silicon-vacancy centers by locally oxidizing a hydrogenated surface with moderate optical excitation and simultaneous spectral monitoring. The loss of conductivity and change in work function due to oxidation are measured in atm… ▽ More Quantum technologies based on quantum point defects in crystals require control over the defect charge state. Here we tune the charge state of shallow nitrogen-vacancy and silicon-vacancy centers by locally oxidizing a hydrogenated surface with moderate optical excitation and simultaneous spectral monitoring. The loss of conductivity and change in work function due to oxidation are measured in atmosphere using conductive atomic force microscopy (C-AFM) and Kelvin probe force microscopy (KPFM). We correlate these scanning probe measurements with optical spectroscopy of the nitrogen-vacancy and silicon-vacancy centers created via implantation and annealing 15-25 nm beneath the diamond surface. The observed charge state of the defects as a function of optical exposure demonstrates that laser oxidation provides a way to precisely tune the Fermi level over a range of at least 2.00 eV. We also observe a significantly larger oxidation rate for implanted surfaces compared to unimplanted surfaces under ambient conditions. Combined with knowledge of the electron affinity of a surface, these results suggest KPFM is a powerful, high-spatial resolution technique to advance surface Fermi level engineering for charge stabilization of quantum defects. △ Less

Submitted 27 September, 2023; originally announced September 2023.

Contributions to the optical linewidth of shallow donor-bound excitonic transition in ZnO

Authors: Vasileios Niaouris, Samuel H. D'Ambrosia, Christian Zimmermann, Xingyi Wang, Ethan R. Hansen, Michael Titze, Edward S. Bielejec, Kai-Mei C. Fu

Abstract: Neutral shallow donors in zinc oxide (ZnO) are spin qubits with optical access via the donor-bound exciton. This spin-photon interface enables applications in quantum networking, memories and transduction. Essential optical parameters which impact the spin-photon interface include radiative lifetime, optical inhomogeneous and homogeneous linewidth and optical depth. We study the donor-bound excito… ▽ More Neutral shallow donors in zinc oxide (ZnO) are spin qubits with optical access via the donor-bound exciton. This spin-photon interface enables applications in quantum networking, memories and transduction. Essential optical parameters which impact the spin-photon interface include radiative lifetime, optical inhomogeneous and homogeneous linewidth and optical depth. We study the donor-bound exciton optical linewidth properties of Al, Ga, and In donors in single-crystal ZnO. The ensemble photoluminescence linewidth ranges from 4-11 GHz, less than two orders of magnitude larger than the expected lifetime-limited linewidth. The ensemble linewidth remains narrow in absorption through samples with an estimated optical depth up to several hundred. The primary thermal relaxation mechanism is identified and found to have a negligible contribution to the total linewidth at 2 K. We find that inhomogeneous broadening due to the disordered isotopic environment in natural ZnO is significant, contributing 2 GHz. Two-laser spectral hole burning measurements, indicate the dominant mechanism, however, is homogeneous. Despite this broadening, the high homogeneity, large optical depth and potential for isotope purification indicate that the optical properties of the ZnO donor-bound exciton are promising for a wide range of quantum technologies and motivate a need to improve the isotope and chemical purity of ZnO for quantum technologies. △ Less

Submitted 17 January, 2024; v1 submitted 24 July, 2023; originally announced July 2023.

Comments: V. Niaouris and S. H. D'Ambrosia contributed equally to this work, 24 pages, 12 figures

Journal ref: Optica Quantum 2, 7-13 (2024)

Tunable phononic coupling in excitonic quantum emitters

Authors: Adina Ripin, Ruoming Peng, Xiaowei Zhang, Srivatsa Chakravarthi, Minhao He, Xiaodong Xu, Kai-Mei Fu, Ting Cao, Mo Li

Abstract: Engineering the coupling between fundamental quantum excitations is at the heart of quantum science and technologies. A significant case is the creation of quantum light sources in which coupling between single photons and phonons can be controlled and harnessed to enable quantum information transduction. Here, we report the deterministic creation of quantum emitters featuring highly tunable coupl… ▽ More Engineering the coupling between fundamental quantum excitations is at the heart of quantum science and technologies. A significant case is the creation of quantum light sources in which coupling between single photons and phonons can be controlled and harnessed to enable quantum information transduction. Here, we report the deterministic creation of quantum emitters featuring highly tunable coupling between excitons and phonons. The quantum emitters are formed in strain-induced quantum dots created in homobilayer semiconductor WSe2. The colocalization of quantum confined interlayer excitons and THz interlayer breathing mode phonons, which directly modulate the exciton energy, leads to a uniquely strong phonon coupling to single-photon emission. The single-photon spectrum of interlayer exciton emission features a single-photon purity >83% and multiple phonon replicas, each heralding the creation of a phonon Fock state in the quantum emitter. Owing to the vertical dipole moment of the interlayer exciton, the phonon-photon interaction is electrically tunable in a wide range, promising to reach the strong coupling regime. Our result demonstrates a new type of solid-state quantum excitonic-optomechanical system at the atomic interface that emits flying photonic qubits coupled with stationary phonons, which could be exploited for quantum transduction and interconnection. △ Less

Submitted 26 February, 2023; originally announced February 2023.

Comments: 20 pages, 4 figures

Architectures for Multinode Superconducting Quantum Computers

Authors: James Ang, Gabriella Carini, Yanzhu Chen, Isaac Chuang, Michael Austin DeMarco, Sophia E. Economou, Alec Eickbusch, Andrei Faraon, Kai-Mei Fu, Steven M. Girvin, Michael Hatridge, Andrew Houck, Paul Hilaire, Kevin Krsulich, Ang Li, Chenxu Liu, Yuan Liu, Margaret Martonosi, David C. McKay, James Misewich, Mark Ritter, Robert J. Schoelkopf, Samuel A. Stein, Sara Sussman, Hong X. Tang , et al. (8 additional authors not shown)

Abstract: Many proposals to scale quantum technology rely on modular or distributed designs where individual quantum processors, called nodes, are linked together to form one large multinode quantum computer (MNQC). One scalable method to construct an MNQC is using superconducting quantum systems with optical interconnects. However, a limiting factor of these machines will be internode gates, which may be t… ▽ More Many proposals to scale quantum technology rely on modular or distributed designs where individual quantum processors, called nodes, are linked together to form one large multinode quantum computer (MNQC). One scalable method to construct an MNQC is using superconducting quantum systems with optical interconnects. However, a limiting factor of these machines will be internode gates, which may be two to three orders of magnitude noisier and slower than local operations. Surmounting the limitations of internode gates will require a range of techniques, including improvements in entanglement generation, the use of entanglement distillation, and optimized software and compilers, and it remains unclear how improvements to these components interact to affect overall system performance, what performance from each is required, or even how to quantify the performance of each. In this paper, we employ a `co-design' inspired approach to quantify overall MNQC performance in terms of hardware models of internode links, entanglement distillation, and local architecture. In the case of superconducting MNQCs with microwave-to-optical links, we uncover a tradeoff between entanglement generation and distillation that threatens to degrade performance. We show how to navigate this tradeoff, lay out how compilers should optimize between local and internode gates, and discuss when noisy quantum links have an advantage over purely classical links. Using these results, we introduce a roadmap for the realization of early MNQCs which illustrates potential improvements to the hardware and software of MNQCs and outlines criteria for evaluating the landscape, from progress in entanglement generation and quantum memory to dedicated algorithms such as distributed quantum phase estimation. While we focus on superconducting devices with optical interconnects, our approach is general across MNQC implementations. △ Less

Submitted 12 December, 2022; originally announced December 2022.

Comments: 23 pages, white paper

Properties of donor qubits in ZnO formed by indium ion implantation

Authors: Xingyi Wang, Christian Zimmermann, Michael Titze, Vasileios Niaouris, Ethan R. Hansen, Samuel H. D'Ambrosia, Lasse Vines, Edward S. Bielejec, Kai-Mei C. Fu

Abstract: Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, c… ▽ More Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, comparable to the optical linewidth of $\textit{in situ}$ In. Longitudinal spin relaxation times ($T_1$) exceed reported values for $\textit{in situ}$ Ga donors, indicating that residual In implantation damage does not degrade $T_1$. Two laser Raman spectroscopy on the donor spin reveals the hyperfine interaction of the donor electron with the spin-9/2 In nuclei. This work is an important step toward the deterministic formation of In donor qubits in ZnO with optical access to a long-lived nuclear spin memory. △ Less

Submitted 14 June, 2023; v1 submitted 10 December, 2022; originally announced December 2022.

Journal ref: PhysRevApplied. Vol. 19, Iss. 5, 054090, 2023

Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer

Authors: Srivatsa Chakravarthi, Nicholas S. Yama, Alex Abulnaga, Ding Huang, Christian Pederson, Karine Hestroffer, Fariba Hatami, Nathalie P. de Leon, Kai-Mei C. Fu

Abstract: Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV)… ▽ More Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stam** process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors ($Q$) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with $Q$ of 4100, we observe a three-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of $C = 2$. These results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal. △ Less

Submitted 13 December, 2022; v1 submitted 9 December, 2022; originally announced December 2022.

Ensemble spin relaxation of shallow donor qubits in ZnO

Authors: Vasileios Niaouris, Mikhail V. Durnev, Xiayu Linpeng, Maria L. K. Viitaniemi, Christian Zimmermann, Aswin Vishnuradhan, Y. Kozuka, M. Kawasaki, Kai-Mei C. Fu

Abstract: We present an experimental and theoretical study of the longitudinal electron spin relaxation ($T_1$) of shallow donors in the direct band-gap semiconductor ZnO. $T_1$ is measured via resonant excitation of the Ga donor-bound exciton. $T_1$ exhibits an inverse-power dependence on magnetic field $T_1\propto B^{-n}$, with $4\leq n\leq 5$, over a field range of 1.75 T to 7 T. We derive an analytic ex… ▽ More We present an experimental and theoretical study of the longitudinal electron spin relaxation ($T_1$) of shallow donors in the direct band-gap semiconductor ZnO. $T_1$ is measured via resonant excitation of the Ga donor-bound exciton. $T_1$ exhibits an inverse-power dependence on magnetic field $T_1\propto B^{-n}$, with $4\leq n\leq 5$, over a field range of 1.75 T to 7 T. We derive an analytic expression for the donor spin-relaxation rate due to spin-orbit (admixture mechanism) and electron-phonon (piezoelectric) coupling for the wurtzite crystal symmetry. Excellent quantitative agreement is found between experiment and theory suggesting the admixture spin-orbit mechanism is the dominant contribution to $T_1$ in the measured magnetic field range. Temperature and excitation-energy dependent measurements indicate a donor density dependent interaction may contribute to small deviations between experiment and theory. The longest $T_1$ measured is 480 ms at 1.75 T with increasing $T_1$ at smaller fields theoretically expected. This work highlights the extremely long longitudinal spin-relaxation time for ZnO donors due to their small spin-orbit coupling. △ Less

Submitted 15 April, 2022; v1 submitted 22 November, 2021; originally announced November 2021.

Comments: 9 pages, 11 figures

Coherent Spin Preparation of Indium Donor Qubits in Single ZnO Nanowires

Authors: Maria L. K. Viitaniemi, Christian Zimmermann, Vasileios Niaouris, Samuel H. D'Ambrosia, Xingyi Wang, E. Senthil Kumar, Faezeh Mohammadbeigi, Simon P. Watkins, Kai-Mei C. Fu

Abstract: Shallow donors in ZnO are promising candidates for photon-mediated quantum technologies. Utilizing the indium donor, we show that favorable donor-bound exciton optical and electron spin properties are retained in isolated ZnO nanowires. The inhomogeneous optical linewidth of single nanowires (60 GHz) is within a factor of 2 of bulk single-crystalline ZnO. Spin initialization via optical pum** is… ▽ More Shallow donors in ZnO are promising candidates for photon-mediated quantum technologies. Utilizing the indium donor, we show that favorable donor-bound exciton optical and electron spin properties are retained in isolated ZnO nanowires. The inhomogeneous optical linewidth of single nanowires (60 GHz) is within a factor of 2 of bulk single-crystalline ZnO. Spin initialization via optical pum** is demonstrated and coherent population trap** is observed. The two-photon absorption width approaches the theoretical limit expected due to the hyperfine interaction between the indium nuclear spin and the donor-bound electron. △ Less

Submitted 26 October, 2021; originally announced October 2021.

Impact of surface and laser-induced noise on the spectral stability of implanted nitrogen-vacancy centers in diamond

Authors: Srivatsa Chakravarthi, Christian Pederson, Zeeshawn Kazi, Andrew Ivanov, Kai-Mei C. Fu

Abstract: Scalable realizations of quantum network technologies utilizing the nitrogen vacancy center in diamond require creation of optically coherent NV centers in close proximity to a surface for coupling to optical structures. We create single NV centers by $^{15}$N ion implantation and high-temperature vacuum annealing. Origin of the NV centers is established by optically detected magnetic resonance sp… ▽ More Scalable realizations of quantum network technologies utilizing the nitrogen vacancy center in diamond require creation of optically coherent NV centers in close proximity to a surface for coupling to optical structures. We create single NV centers by $^{15}$N ion implantation and high-temperature vacuum annealing. Origin of the NV centers is established by optically detected magnetic resonance spectroscopy for nitrogen isotope identification. Near lifetime-limited optical linewidths ($<$ 60 MHz) are observed for the majority of the normal-implant (7$^\circ$, $\approx$ 100 nm deep) $^{15}$NV centers. Long-term stability of the NV$^-$ charge state and emission frequency is demonstrated. The effect of NV-surface interaction is investigated by varying the implantation angle for a fixed ion-energy, and thus lattice damage profile. In contrast to the normal implant condition, NVs from an oblique-implant (85$^\circ$, $\approx$ 20 nm deep) exhibit substantially reduced optical coherence. Our results imply that the surface is a larger source of perturbation than implantation damage for shallow implanted NVs. This work supports the viability of ion implantation for formation of optically stable NV centers. However, careful surface preparation will be necessary for scalable defect engineering. △ Less

Submitted 6 August, 2021; v1 submitted 19 May, 2021; originally announced May 2021.

Comments: 8 pages, 6 figures, 1 table

Journal ref: Phys. Rev. B 104, 085425 (2021)

Optical spin control and coherence properties of acceptor bound holes in strained GaAs

Authors: Xiayu Linpeng, Todd Karin, Mikhail V. Durnev, Mikhail M. Glazov, Rüdiger Schott, Andreas D. Wieck, Arne Ludwig, Kai-Mei C. Fu

Abstract: Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to potentially longer coherence times. Here we demonstrate optical pum** and coherent population trap** for acceptor-bound holes in a strained GaAs epitaxial la… ▽ More Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to potentially longer coherence times. Here we demonstrate optical pum** and coherent population trap** for acceptor-bound holes in a strained GaAs epitaxial layer. We find $μ$s-scale longitudinal spin relaxation time T$_1$ and an inhomogeneous dephasing time T$_2^*$ of $\sim$7~ns. We attribute the spin relaxation mechanism to a combination effect of a hole-phonon interaction through the deformation potentials and a heavy-hole light-hole mixing in an in-plane magnetic field. We attribute the short T$_2^*$ to g-factor broadening due to strain inhomogeneity. T$_1$ and T$_2^*$ are quantitatively calculated based on these mechanisms and compared with the experimental results. While the hyperfine-mediated decoherence is mitigated, our results highlight the important contribution of strain to relaxation and dephasing of acceptor-bound hole spins. △ Less

Submitted 13 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. B 103, 115412 (2021)

Sensitive magnetometry in challenging environments

Authors: Kai-Mei C. Fu, Geoffrey Z. Iwata, Arne Wickenbrock, Dmitry Budker

Abstract: State-of-the-art magnetic field measurements performed in shielded environments with carefully controlled conditions rarely reflect the realities of those applications envisioned in the introductions of peer-reviewed publications. Nevertheless, significant advances in magnetometer sensitivity have been accompanied by serious attempts to bring these magnetometers into the challenging working enviro… ▽ More State-of-the-art magnetic field measurements performed in shielded environments with carefully controlled conditions rarely reflect the realities of those applications envisioned in the introductions of peer-reviewed publications. Nevertheless, significant advances in magnetometer sensitivity have been accompanied by serious attempts to bring these magnetometers into the challenging working environments in which they are often required. This review discusses the ways in which various (predominantly optically-pumped) magnetometer technologies have been adapted for use in a wide range of noisy and physically demanding environments. △ Less

Submitted 12 October, 2020; v1 submitted 31 July, 2020; originally announced August 2020.

Inverse-designed photon extractors for optically addressable defect qubits

Authors: Srivatsa Chakravarthi, Pengning Chao, Christian Pederson, Sean Molesky, Andrew Ivanov, Karine Hestroffer, Fariba Hatami, Alejandro W. Rodriguez, Kai-Mei C. Fu

Abstract: Solid-state defect qubit systems with spin-photon interfaces show great promise for quantum information and metrology applications. Photon collection efficiency, however, presents a major challenge for defect qubits in high refractive index host materials. Inverse-design optimization of photonic devices enables unprecedented flexibility in tailoring critical parameters of a spin-photon interface i… ▽ More Solid-state defect qubit systems with spin-photon interfaces show great promise for quantum information and metrology applications. Photon collection efficiency, however, presents a major challenge for defect qubits in high refractive index host materials. Inverse-design optimization of photonic devices enables unprecedented flexibility in tailoring critical parameters of a spin-photon interface including spectral response, photon polarization and collection mode. Further, the design process can incorporate additional constraints, such as fabrication tolerance and material processing limitations. Here we design and demonstrate a compact hybrid gallium phosphide on diamond inverse-design planar dielectric structure coupled to single near-surface nitrogen-vacancy centers formed by implantation and annealing. We observe device operation near the theoretical limit and measure up to a 14-fold broadband enhancement in photon extraction efficiency. We expect that such inverse-designed devices will enable realization of scalable arrays of single-photon emitters, rapid characterization of new quantum emitters, sensing and efficient heralded entanglement schemes. △ Less

Submitted 15 December, 2020; v1 submitted 24 July, 2020; originally announced July 2020.

Photon-mediated entanglement scheme between a ZnO semiconductor defect and a trapped Yb ion

Authors: Jennifer F. Lilieholm, Vasilis Niaouris, Alexander Kato, Kai-Mei C. Fu, Boris B. Blinov

Abstract: We propose an optical scheme to generate an entangled state between a trapped ion and a solid state donor qubit through which-path erasure of identical photons emitted from the two systems. The proposed scheme leverages the similar transition frequencies between In donor bound excitons in ZnO and the $^2P_{1/2}$ to $^2S_{1/2}$ transition in Yb$^+$. The lifetime of the relevant ionic state is longe… ▽ More We propose an optical scheme to generate an entangled state between a trapped ion and a solid state donor qubit through which-path erasure of identical photons emitted from the two systems. The proposed scheme leverages the similar transition frequencies between In donor bound excitons in ZnO and the $^2P_{1/2}$ to $^2S_{1/2}$ transition in Yb$^+$. The lifetime of the relevant ionic state is longer than that of the ZnO system by a factor of 6, leading to a mismatch in the temporal profiles of emitted photons. A detuned cavity-assisted Raman scheme weakly excites the donor with a shaped laser pulse to generate photons with 0.99 temporal overlap to the Yb$^+$ emission and partially shift the emission of the defect toward the Yb$^+$ transition. The remaining photon shift is accomplished via the dc Stark effect. We show that an entanglement rate of 21 kHz and entanglement fidelity of 94 % can be attained using a weak excitation scheme with reasonable parameters. △ Less

Submitted 2 September, 2020; v1 submitted 25 June, 2020; originally announced June 2020.

Quantum Simulators: Architectures and Opportunities

Authors: Ehud Altman, Kenneth R. Brown, Giuseppe Carleo, Lincoln D. Carr, Eugene Demler, Cheng Chin, Brian DeMarco, Sophia E. Economou, Mark A. Eriksson, Kai-Mei C. Fu, Markus Greiner, Kaden R. A. Hazzard, Randall G. Hulet, Alicia J. Kollar, Benjamin L. Lev, Mikhail D. Lukin, Ruichao Ma, Xiao Mi, Shashank Misra, Christopher Monroe, Kater Murch, Zaira Nazario, Kang-Kuen Ni, Andrew C. Potter, Pedram Roushan , et al. (12 additional authors not shown)

Abstract: Quantum simulators are a promising technology on the spectrum of quantum devices from specialized quantum experiments to universal quantum computers. These quantum devices utilize entanglement and many-particle behaviors to explore and solve hard scientific, engineering, and computational problems. Rapid development over the last two decades has produced more than 300 quantum simulators in operati… ▽ More Quantum simulators are a promising technology on the spectrum of quantum devices from specialized quantum experiments to universal quantum computers. These quantum devices utilize entanglement and many-particle behaviors to explore and solve hard scientific, engineering, and computational problems. Rapid development over the last two decades has produced more than 300 quantum simulators in operation worldwide using a wide variety of experimental platforms. Recent advances in several physical architectures promise a golden age of quantum simulators ranging from highly optimized special purpose simulators to flexible programmable devices. These developments have enabled a convergence of ideas drawn from fundamental physics, computer science, and device engineering. They have strong potential to address problems of societal importance, ranging from understanding vital chemical processes, to enabling the design of new materials with enhanced performance, to solving complex computational problems. It is the position of the community, as represented by participants of the NSF workshop on "Programmable Quantum Simulators," that investment in a national quantum simulator program is a high priority in order to accelerate the progress in this field and to result in the first practical applications of quantum machines. Such a program should address two areas of emphasis: (1) support for creating quantum simulator prototypes usable by the broader scientific community, complementary to the present universal quantum computer effort in industry; and (2) support for fundamental research carried out by a blend of multi-investigator, multi-disciplinary collaborations with resources for quantum simulator software, hardware, and education. △ Less

Submitted 20 December, 2019; v1 submitted 14 December, 2019; originally announced December 2019.

Comments: 41 pages -- references and acknowledgments added in v2

Journal ref: PRX Quantum 2, 017003 (2021)

A window into NV center kinetics via repeated annealing and spatial tracking of thousands of individual NV centers

Authors: Srivatsa Chakravarthi, Chris Moore, April Opsvig, Christian Pederson, Emma Hunt, Andrew Ivanov, Ian Christen, Scott Dunham, Kai-Mei C Fu

Abstract: Knowledge of the nitrogen-vacancy center formation kinetics in diamond is critical to engineering sensors and quantum information devices based on this defect. Here we utilize the longitudinal tracking of single NV centers to elucidate NV defect kinetics during high-temperature annealing from 800-1100 $^\circ$C in high-purity chemical-vapor-deposition diamond. We observe three phenomena which can… ▽ More Knowledge of the nitrogen-vacancy center formation kinetics in diamond is critical to engineering sensors and quantum information devices based on this defect. Here we utilize the longitudinal tracking of single NV centers to elucidate NV defect kinetics during high-temperature annealing from 800-1100 $^\circ$C in high-purity chemical-vapor-deposition diamond. We observe three phenomena which can coexist: NV formation, NV quenching, and NV orientation changes. Of relevance to NV-based applications, a 6 to 24-fold enhancement in the NV density, in the absence of sample irradiation, is observed by annealing at 980 $^\circ$C, and NV orientation changes are observed at 1050 $^\circ$C. With respect to the fundamental understanding of defect kinetics in ultra-pure diamond, our results indicate a significant vacancy source can be activated for NV creation between 950-980 $^\circ$C and suggests that native hydrogen from NVH$_y$ complexes plays a dominant role in NV quenching, in agreement with recent {\it ab initio} calculations. Finally, the direct observation of orientation changes allows us to estimate an NV diffusion barrier of 5.1~eV. △ Less

Submitted 23 November, 2019; v1 submitted 17 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. Materials 4, 023402 (2020)

Frequency control of single quantum emitters in integrated photonic circuits

Authors: Emma R. Schmidgall, Srivatsa Chakravarthi, Michael Gould, Ian R. Christen, Karine Hestroffer, Fariba Hatami, Kai-Mei C. Fu

Abstract: Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect… ▽ More Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation. △ Less

Submitted 23 February, 2018; originally announced February 2018.

Journal ref: Nano Lett. 18, 1175 (2018)

Coherence properties of shallow donor qubits in ZnO

Authors: Xiayu Linpeng, Maria L. K. Viitaniemi, Aswin Vishnuradhan, Y. Kozuka, Cameron Johnson, M. Kawasaki, Kai-Mei C. Fu

Abstract: Defects in crystals are leading candidates for photon-based quantum technologies, but progress in develo** practical devices critically depends on improving defect optical and spin properties. Motivated by this need, we study a new defect qubit candidate, the shallow donor in ZnO. We demonstrate all-optical control of the electron spin state of the donor qubits and measure the spin coherence pro… ▽ More Defects in crystals are leading candidates for photon-based quantum technologies, but progress in develo** practical devices critically depends on improving defect optical and spin properties. Motivated by this need, we study a new defect qubit candidate, the shallow donor in ZnO. We demonstrate all-optical control of the electron spin state of the donor qubits and measure the spin coherence properties. We find a longitudinal relaxation time T$_1$ exceeding 100 ms, an inhomogeneous dephasing time T$_2^*$ of $17\pm2$ ns, and a Hahn spin-echo time T$_2$ of $50\pm13$ $μ$s. The magnitude of T$_2^*$ is consistent with the inhomogeneity of the nuclear hyperfine field in natural ZnO. Possible mechanisms limiting T$_2$ include instantaneous diffusion and nuclear spin diffusion (spectral diffusion). These results are comparable to the phosphorous donor system in natural silicon, suggesting that with isotope and chemical purification long qubit coherence times can be obtained for donor spins in a direct band gap semiconductor. This work motivates further research on high-purity material growth, quantum device fabrication, and high-fidelity control of the donor:ZnO system for quantum technologies. △ Less

Submitted 23 May, 2018; v1 submitted 9 February, 2018; originally announced February 2018.

Journal ref: Phys. Rev. Applied 10, 064061 (2018)

Efficient extraction of zero-phonon-line photons from single nitrogen-vacancy centers in an integrated GaP-on-diamond platform

Authors: Michael Gould, Emma R. Schmidgall, Shabnam Dadgostar, Fariba Hatami, Kai-Mei C. Fu

Abstract: Scaling beyond two-node quantum networks using nitrogen vacancy (NV) centers in diamond is limited by the low probability of collecting zero phonon line (ZPL) photons from single centers. Here, we demonstrate GaP-on-diamond disk resonators which resonantly couple ZPL photons from single NV centers to single-mode waveguides. In these devices, the probability of a single NV center emitting a ZPL pho… ▽ More Scaling beyond two-node quantum networks using nitrogen vacancy (NV) centers in diamond is limited by the low probability of collecting zero phonon line (ZPL) photons from single centers. Here, we demonstrate GaP-on-diamond disk resonators which resonantly couple ZPL photons from single NV centers to single-mode waveguides. In these devices, the probability of a single NV center emitting a ZPL photon into the guided waveguide mode after optical excitation can reach 9%, due to a combination of resonant enhancement of the ZPL emission and efficient coupling between the resonator and waveguide. We verify the single-photon nature of the emission and experimentally demonstrate both high in-waveguide photon numbers and substantial Purcell enhancement for a set of devices. These devices may enable scalable integrated quantum networks based on NV centers. △ Less

Submitted 15 June, 2016; v1 submitted 6 June, 2016; originally announced June 2016.

Comments: 8 pages, 6 figures (Including Supplemental Info)

Journal ref: Phys. Rev. Applied 6, 011001 (2016)

A Large-Scale GaP-on-Diamond Integrated Photonics Platform for NV Center-Based Quantum Information

Authors: Michael Gould, Srivatsa Chakravarthi, Ian R. Christen, Nicole Thomas, Shabnam Dadgostar, Yuncheng Song, Minjoo Larry Lee, Fariba Hatami, Kai-Mei C. Fu

Abstract: We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place th… ▽ More We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place the platform in a strong position to realize measurement-based quantum information protocols utilizing the NV center in diamond. △ Less

Submitted 16 October, 2015; originally announced October 2015.

Comments: 8 pages, 8 figures

Room-temperature detection of single 20 nm super-paramagnetic nanoparticles with an imaging magnetometer

Authors: Michael Gould, Russell Barbour, Nicole Thomas, Hamed Arami, Kannan M. Krishnan, Kai-Mei Fu

Abstract: We demonstrate room temperature detection of single 20 nm super-paramagnetic nanoparticles (SPNs) with a wide-field optical microscope platform suitable for biological integration. The particles are made of magnetite (Fe3O4) and are thus non-toxic and biocompatible. Detection is accomplished via optically detected magnetic resonance imaging using nitrogen-vacancy defect centers in diamond, resulti… ▽ More We demonstrate room temperature detection of single 20 nm super-paramagnetic nanoparticles (SPNs) with a wide-field optical microscope platform suitable for biological integration. The particles are made of magnetite (Fe3O4) and are thus non-toxic and biocompatible. Detection is accomplished via optically detected magnetic resonance imaging using nitrogen-vacancy defect centers in diamond, resulting in a DC magnetic field detection limit of 2.3 μT. This marks a large step forward in the detection of SPNs, and we expect that it will allow for the development of magnetic-field-based biosensors capable of detecting a single molecular binding event. △ Less

Submitted 4 March, 2014; originally announced March 2014.

Comments: 12 pages, 3 figures, submitted to Applied Physics Letters

Dynamic stabilization of the optical resonances of single nitrogen-vacancy centers in diamond

Authors: V. M. Acosta, C. Santori, A. Faraon, Z. Huang, K. -M. C. Fu, A. Stacey, D. A. Simpson, S. Tomljenovic-Hanic, K. Ganesan, A. D. Greentree, S. Prawer, R. G. Beausoleil

Abstract: We report electrical tuning by the Stark effect of the excited-state structure of single nitrogen-vacancy (NV) centers located less than ~100 nm from the diamond surface. The zero-phonon line (ZPL) emission frequency is controllably varied over a range of 300 GHz. Using high-resolution emission spectroscopy, we observe electrical tuning of the strengths of both cycling and spin-altering transition… ▽ More We report electrical tuning by the Stark effect of the excited-state structure of single nitrogen-vacancy (NV) centers located less than ~100 nm from the diamond surface. The zero-phonon line (ZPL) emission frequency is controllably varied over a range of 300 GHz. Using high-resolution emission spectroscopy, we observe electrical tuning of the strengths of both cycling and spin-altering transitions. Under resonant excitation, we apply dynamic feedback to stabilize the ZPL frequency. The transition is locked over several minutes and drifts of the peak position on timescales greater than ~100 ms are reduced to a fraction of the single-scan linewidth, with standard deviation as low as 16 MHz (obtained for an NV in bulk, ultra-pure diamond). These techniques should improve the entanglement success probability in quantum communications protocols. △ Less

Submitted 3 April, 2012; v1 submitted 22 December, 2011; originally announced December 2011.

Comments: 6 pages, 3 figures + Supplementary Info (4 pages, 3 figures)

Journal ref: Phys. Rev. Lett. 108, 206401 (2012)

Hybrid nanocavities for resonant enhancement of color center emission in diamond

Authors: Paul E. Barclay, Kai-Mei C. Fu, Charles Santori, Andrei Faraon, Raymond G. Beausoleil

Abstract: Resonantly enhanced emission from the zero phonon line of a diamond nitrogen-vacancy (NV) center in single crystal diamond is demonstrated experimentally using a hybrid whispering gallery mode nanocavity. A 900 nm diameter ring nanocavity formed from gallium phosphide, whose sidewalls extend into a diamond substrate, is tuned onto resonance at low-temperature with the zero phonon line of a negativ… ▽ More Resonantly enhanced emission from the zero phonon line of a diamond nitrogen-vacancy (NV) center in single crystal diamond is demonstrated experimentally using a hybrid whispering gallery mode nanocavity. A 900 nm diameter ring nanocavity formed from gallium phosphide, whose sidewalls extend into a diamond substrate, is tuned onto resonance at low-temperature with the zero phonon line of a negatively charged NV center implanted near the diamond surface. When the nanocavity is on resonance, the zero phonon line intensity is enhanced by approximately an order of magnitude, and the spontaneous emission lifetime of the NV is reduced as much as 18%, corresponding to a 6.3X enhancement of emission in the zero photon line. △ Less

Submitted 25 May, 2011; originally announced May 2011.

Journal ref: Phys. Rev. X 1, 011007 (2011)

Low-temperature tapered-fiber probing of diamond NV ensembles coupled to GaP microcavities

Authors: K. -M. C. Fu, P. E. Barclay, C. Santori, A. Faraon, R. G. Beausoleil

Abstract: In this work we present a platform for testing the device performance of a cavity-emitter system, using an ensemble of emitters and a tapered optical fiber. This method provides high-contrast spectra of the cavity modes, selective detection of emitters coupled to the cavity, and an estimate of the device performance in the single- emitter case. Using nitrogen-vacancy (NV) centers in diamond and a… ▽ More In this work we present a platform for testing the device performance of a cavity-emitter system, using an ensemble of emitters and a tapered optical fiber. This method provides high-contrast spectra of the cavity modes, selective detection of emitters coupled to the cavity, and an estimate of the device performance in the single- emitter case. Using nitrogen-vacancy (NV) centers in diamond and a GaP optical microcavity, we are able to tune the cavity onto the NV resonance at 10 K, couple the cavity-coupled emission to a tapered fiber, and measure the fiber-coupled NV spontaneous emission decay. Theoretically we show that the fiber-coupled average Purcell factor is 2-3 times greater than that of free-space collection; although due to ensemble averaging it is still a factor of 3 less than the Purcell factor of a single, ideally placed center. △ Less

Submitted 25 February, 2011; originally announced February 2011.

Comments: 15 pages, 6 figures

Resonant enhancement of the zero-phonon emission from a color center in a diamond cavity

Authors: Andrei Faraon, Paul E. Barclay, Charles Santori, Kai-Mei C. Fu, Raymond G. Beausoleil

Abstract: We demonstrate coupling of the zero-phonon line of individual nitrogen-vacancy centers and the modes of microring resonators fabricated in single-crystal diamond. A zero-phonon line enhancement exceeding ten-fold is estimated from lifetime measurements at cryogenic temperatures. The devices are fabricated using standard semiconductor techniques and off-the-shelf materials, thus enabling integrated… ▽ More We demonstrate coupling of the zero-phonon line of individual nitrogen-vacancy centers and the modes of microring resonators fabricated in single-crystal diamond. A zero-phonon line enhancement exceeding ten-fold is estimated from lifetime measurements at cryogenic temperatures. The devices are fabricated using standard semiconductor techniques and off-the-shelf materials, thus enabling integrated diamond photonics. △ Less

Submitted 17 December, 2010; originally announced December 2010.

Comments: 5 pages, 4 figures

Observation of the dynamic Jahn-Teller effect in the excited states of nitrogen-vacancy centers in diamond

Authors: Kai-Mei C. Fu, Charles Santori, Paul E. Barclay, Lachlan J. Rogers, Neil B. Manson, Raymond G. Beausoleil

Abstract: The optical transition linewidth and emission polarization of single nitrogen-vacancy (NV) centers are measured from 5 K to room temperature. Inter-excited state population relaxation is shown to broaden the zero-phonon line and both the relaxation and linewidth are found to follow a T^5 dependence for T up to 100 K. This dependence indicates that the dynamic Jahn-Teller effect is the dominant d… ▽ More The optical transition linewidth and emission polarization of single nitrogen-vacancy (NV) centers are measured from 5 K to room temperature. Inter-excited state population relaxation is shown to broaden the zero-phonon line and both the relaxation and linewidth are found to follow a T^5 dependence for T up to 100 K. This dependence indicates that the dynamic Jahn-Teller effect is the dominant dephasing mechanism for the NV optical transitions at low temperatures. △ Less

Submitted 17 December, 2009; v1 submitted 2 October, 2009; originally announced October 2009.

Journal ref: Phys. Rev. Lett. 103, 256404 (2009)

Chip-based microcavities coupled to NV centers in single crystal diamond

Authors: Paul E. Barclay, Kai-Mei C. Fu, Charles Santori, Raymond G. Beausoleil

Abstract: Optical coupling of nitrogen vacancy centers in single-crystal diamond to an on-chip microcavity is demonstrated. The microcavity is fabricated from a hybrid gallium phosphide and diamond material system, and supports whispering gallery mode resonances with spectrometer resolution limited Q > 25000. Optical coupling of nitrogen vacancy centers in single-crystal diamond to an on-chip microcavity is demonstrated. The microcavity is fabricated from a hybrid gallium phosphide and diamond material system, and supports whispering gallery mode resonances with spectrometer resolution limited Q > 25000. △ Less

Submitted 14 August, 2009; originally announced August 2009.

Journal ref: Appl. Phys. Lett. 95, 191115 (2009)

On the indistinguishability of Raman photons

Authors: Charles Santori, David Fattal, Kai-Mei C. Fu, Paul E. Barclay, Raymond G. Beausoleil

Abstract: We provide a theoretical framework to study the effect of dephasing on the quantum indistinguishability of single photons emitted from a coherently driven cavity QED $Λ$-system. We show that with a large excited-state detuning, the photon indistinguishability can be drastically improved provided that the fluctuation rate of the noise source affecting the excited state is fast compared with the p… ▽ More We provide a theoretical framework to study the effect of dephasing on the quantum indistinguishability of single photons emitted from a coherently driven cavity QED $Λ$-system. We show that with a large excited-state detuning, the photon indistinguishability can be drastically improved provided that the fluctuation rate of the noise source affecting the excited state is fast compared with the photon emission rate. In some cases a spectral filter is required to realize this improvement, but the cost in efficiency can be made small. △ Less

Submitted 9 December, 2009; v1 submitted 14 July, 2009; originally announced July 2009.

Comments: 18 pages, 3 figures, final version

Journal ref: New Journal of Physics 11, 123009 (2009)

Ultrafast optical spin echo for electron spins in semiconductors

Authors: Susan M. Clark, Kai-Mei C. Fu, Qiang Zhang, Thaddeus D. Ladd, Colin Stanley, Yoshihisa Yamamoto

Abstract: Spin-based quantum computing and magnetic resonance techniques rely on the ability to measure the coherence time, T2, of a spin system. We report on the experimental implementation of all-optical spin echo to determine the T2 time of a semiconductor electron-spin system. We use three ultrafast optical pulses to rotate spins an arbitrary angle and measure an echo signal as the time between pulses… ▽ More Spin-based quantum computing and magnetic resonance techniques rely on the ability to measure the coherence time, T2, of a spin system. We report on the experimental implementation of all-optical spin echo to determine the T2 time of a semiconductor electron-spin system. We use three ultrafast optical pulses to rotate spins an arbitrary angle and measure an echo signal as the time between pulses is lengthened. Unlike previous spin-echo techniques using microwaves, ultrafast optical pulses allow clean T2 measurements of systems with dephasing times T2* fast in comparison to the timescale for microwave control. This demonstration provides a step toward ultrafast optical dynamic decoupling of spin-based qubits. △ Less

Submitted 3 April, 2009; originally announced April 2009.

Comments: 4 pages, 3 figures

Hybrid photonic crystal cavity and waveguide for coupling to diamond NV-centers

Authors: Paul E. Barclay, Kai-Mei Fu, Charles Santori, Raymond G. Beausoleil

Abstract: A design for an ultra-high Q photonic crystal nanocavity engineered to interact with nitrogen-vacancy (NV) centers located near the surface of a single crystal diamond sample is presented. The structure is based upon a nanowire photonic crystal geometry, and consists of a patterned high refractive index membrane, such as gallium phosphide (GaP), supported by a diamond substrate. The nanocavity s… ▽ More A design for an ultra-high Q photonic crystal nanocavity engineered to interact with nitrogen-vacancy (NV) centers located near the surface of a single crystal diamond sample is presented. The structure is based upon a nanowire photonic crystal geometry, and consists of a patterned high refractive index membrane, such as gallium phosphide (GaP), supported by a diamond substrate. The nanocavity supports a mode with quality factor Q > 1.5 million and mode volume V < 0.52 (λ/n_\text{GaP})^3, and promises to allow Purcell enhanced collection of spontaneous emission from an NV located more than 50 nm below the diamond surface. The nanowire photonic crystal waveguide can be used to efficiently couple light into and out of the cavity, or as an efficient broadband collector of NV phonon sideband emission. The proposed structures can be fabricated using existing materials and processing techniques. △ Less

Submitted 22 May, 2009; v1 submitted 2 April, 2009; originally announced April 2009.

Journal ref: Optics Express, Vol. 17, Issue 12, pp. 9588-9601 (2009)

High nitrogen-vacancy density diamonds for magnetometry applications

Authors: V. M. Acosta, E. Bauch, M. P. Ledbetter, C. Santori, K. -M. C. Fu, P. E. Barclay, R. G. Beausoleil, H. Linget, J. F. Roch, F. Treussart, S. Chemerisov, W. Gawlik, D. Budker

Abstract: Nitrogen-vacancy (NV) centers in millimeter-scale diamond samples were produced by irradiation and subsequent annealing under varied conditions. The optical and spin relaxation properties of these samples were characterized using confocal microscopy, visible and infrared absorption, and optically detected magnetic resonance. The sample with the highest NV- concentration, approximately 16 ppm = 2… ▽ More Nitrogen-vacancy (NV) centers in millimeter-scale diamond samples were produced by irradiation and subsequent annealing under varied conditions. The optical and spin relaxation properties of these samples were characterized using confocal microscopy, visible and infrared absorption, and optically detected magnetic resonance. The sample with the highest NV- concentration, approximately 16 ppm = 2.8 x 10^{18} cm^{-3}, was prepared with no observable traces of neutrally-charged vacancy defects. The effective transverse spin relaxation time for this sample was T2* = 118(48) ns, predominately limited by residual paramagnetic nitrogen which was determined to have a concentration of 52(7) ppm. Under ideal conditions, the shot-noise limited sensitivity is projected to be ~150 fT/\sqrt{Hz} for a 100 micron-scale magnetometer based on this sample. Other samples with NV- concentrations from .007 to 12 ppm and effective relaxation times ranging from 27 to 291 ns were prepared and characterized. △ Less

Submitted 31 July, 2009; v1 submitted 19 March, 2009; originally announced March 2009.

Comments: Accepted by PRB (July 29, 2009), 24 pages, 10 figures, 3 tables

Journal ref: Phys.Rev.B80:115202,2009

Coherent interference effects in a nano-assembled optical cavity-QED system

Authors: Paul E. Barclay, Charles Santori, Kai-Mei Fu, Raymond G. Beausoleil, Oskar Painter

Abstract: Diamond nanocrystals containing NV color centers are positioned with 100-nanometer-scale accuracy in the near-field of a high-Q SiO2 microdisk cavity using a fiber taper. The cavity modified nanocrystal photoluminescence is studied, with Fano-like quantum interference features observed in the far-field emission spectrum. A quantum optical model of the system is proposed, from which the NV- zero… ▽ More Diamond nanocrystals containing NV color centers are positioned with 100-nanometer-scale accuracy in the near-field of a high-Q SiO2 microdisk cavity using a fiber taper. The cavity modified nanocrystal photoluminescence is studied, with Fano-like quantum interference features observed in the far-field emission spectrum. A quantum optical model of the system is proposed, from which the NV- zero phonon line coherent coupling rate to the microdisk is estimated to be 28 MHz for a nearly optimally placed nanocrystal. △ Less

Submitted 24 December, 2008; v1 submitted 24 December, 2008; originally announced December 2008.

Journal ref: Optics Express, Vol. 17, Issue 10, pp. 8081-8097 (2009)

Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealing

Authors: Charles Santori, Paul E. Barclay, Kai-Mei C. Fu, Raymond G. Beausoleil

Abstract: Etching experiments were performed that reveal the vertical distribution of optically active nitrogen-vacancy (NV) centers in diamond created in close proximity to a surface through ion implantation and annealing. The NV distribution depends strongly on the native nitrogen concentration, and spectral measurements of the neutral and negatively-charged NV peaks give evidence for electron depletion… ▽ More Etching experiments were performed that reveal the vertical distribution of optically active nitrogen-vacancy (NV) centers in diamond created in close proximity to a surface through ion implantation and annealing. The NV distribution depends strongly on the native nitrogen concentration, and spectral measurements of the neutral and negatively-charged NV peaks give evidence for electron depletion effects in lower-nitrogen material. The results are important for potential quantum information and magnetometer devices where NV centers must be created in close proximity to a surface for coupling to optical structures. △ Less

Submitted 8 February, 2009; v1 submitted 19 December, 2008; originally announced December 2008.

Comments: 9 pages, 6 figures

Coupling of nitrogen-vacancy centers in diamond to a GaP waveguide

Authors: K. -M. C. Fu, C. Santori, P. E. Barclay, I. Aharonovich, S. Prawer, N. Meyer, A. M. Holm, R. G. Beausoleil

Abstract: The optical coupling of guided modes in a GaP waveguide to nitrogen-vacancy (NV) centers in diamond is demonstrated. The electric field penetration into diamond and the loss of the guided mode are measured. The results indicate that the GaP-diamond system could be useful for realizing coupled microcavity-NV devices for quantum information processing in diamond. The optical coupling of guided modes in a GaP waveguide to nitrogen-vacancy (NV) centers in diamond is demonstrated. The electric field penetration into diamond and the loss of the guided mode are measured. The results indicate that the GaP-diamond system could be useful for realizing coupled microcavity-NV devices for quantum information processing in diamond. △ Less

Submitted 3 November, 2008; originally announced November 2008.

Comments: 4 pages 4 figures

Ultrafast control of donor-bound electron spins with single detuned optical pulses

Authors: Kai-Mei C. Fu, Susan M. Clark, Charles Santori, M. C. Holland, Colin R. Stanley, Yoshihisa Yamamoto

Abstract: The ability to control spins in semiconductors is important in a variety of fields including spintronics and quantum information processing. Due to the potentially fast dephasing times of spins in the solid state [1-3], spin control operating on the picosecond or faster timescale may be necessary. Such speeds, which are not possible to attain with standard electron spin resonance (ESR) technique… ▽ More The ability to control spins in semiconductors is important in a variety of fields including spintronics and quantum information processing. Due to the potentially fast dephasing times of spins in the solid state [1-3], spin control operating on the picosecond or faster timescale may be necessary. Such speeds, which are not possible to attain with standard electron spin resonance (ESR) techniques based on microwave sources, can be attained with broadband optical pulses. One promising ultrafast technique utilizes single broadband pulses detuned from resonance in a three-level Lambda system [4]. This attractive technique is robust against optical pulse imperfections and does not require a fixed optical reference phase. Here we demonstrate the principle of coherent manipulation of spins theoretically and experimentally. Using this technique, donor-bound electron spin rotations with single-pulse areas exceeding pi/4 and two-pulses areas exceeding pi/2 are demonstrated. We believe the maximum pulse areas attained do not reflect a fundamental limit of the technique and larger pulse areas could be achieved in other material systems. This technique has applications from basic solid-state ESR spectroscopy to arbitrary single-qubit rotations [4, 5] and bang-bang control[6] for quantum computation. △ Less

Submitted 25 June, 2008; originally announced June 2008.

Comments: 15 pages, 4 figures, submitted 12/2008. Since the submission of this work we have become aware of related work: J. Berezovsky, M. H. Mikkelsen, N. G. Stoltz, L. A. Coldren, and D. D. Awschalom, Science 320: 349-352 (2008)

Quantum computers based on electron spins controlled by ultra-fast, off-resonant, single optical pulses

Authors: Susan M. Clark, Kai-Mei C. Fu, Thaddeus D. Ladd, Yoshihisa Yamamoto

Abstract: We describe a fast quantum computer based on optically controlled electron spins in charged quantum dots that are coupled to microcavities. This scheme uses broad-band optical pulses to rotate electron spins and provide the clock signal to the system. Non-local two-qubit gates are performed by phase shifts induced by electron spins on laser pulses propagating along a shared waveguide. Numerical… ▽ More We describe a fast quantum computer based on optically controlled electron spins in charged quantum dots that are coupled to microcavities. This scheme uses broad-band optical pulses to rotate electron spins and provide the clock signal to the system. Non-local two-qubit gates are performed by phase shifts induced by electron spins on laser pulses propagating along a shared waveguide. Numerical simulations of this scheme demonstrate high-fidelity single-qubit and two-qubit gates with operation times comparable to the inverse Zeeman frequency. △ Less

Submitted 11 June, 2007; v1 submitted 18 October, 2006; originally announced October 2006.

Comments: 4 pages, 4 figures, introduction is clarified, the section on two-qubit gates was expanded and much more detail about gate fidelities is given, figures were modified, one figure replaced with a figure showing gate fidelities for relevant parameters

Coherent Population Trap** of Electron Spins in a Semiconductor

Authors: Kai-Mei C. Fu, Charles Santori, Colin Stanley, M. C. Holland, Yoshihisa Yamamoto

Abstract: In high-purity n-type GaAs under strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence indicating the creation of the coherent population-trapped state. Our dat… ▽ More In high-purity n-type GaAs under strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trap** in GaAs indicates that this and similar semiconductor systems could be used for various EIT-type experiments. △ Less

Submitted 25 June, 2007; v1 submitted 31 March, 2005; originally announced April 2005.

Comments: 5 pages, 4 figures replaced 6/25/2007 with PRL version

Journal ref: Phys. Rev. Lett. 95, 187405 (2005)

Optical Detection of a Single Nuclear Spin

Authors: K-M. C. Fu, T. D. Ladd, C. Santori, Y. Yamamoto

Abstract: We propose a method to optically detect the spin state of a 31-P nucleus embedded in a 28-Si matrix. The nuclear-electron hyperfine splitting of the 31-P neutral-donor ground state can be resolved via a direct frequency discrimination measurement of the 31-P bound exciton photoluminescence using single photon detectors. The measurement time is expected to be shorter than the lifetime of the nucl… ▽ More We propose a method to optically detect the spin state of a 31-P nucleus embedded in a 28-Si matrix. The nuclear-electron hyperfine splitting of the 31-P neutral-donor ground state can be resolved via a direct frequency discrimination measurement of the 31-P bound exciton photoluminescence using single photon detectors. The measurement time is expected to be shorter than the lifetime of the nuclear spin at 4 K and 10 T. △ Less

Submitted 14 February, 2003; originally announced February 2003.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B 69, 125306 (2004)