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RF simulation platform of qubit control using FDSOI technology for quantum computing
Authors:
H. Jacquinot,
R. Maurand,
G. Troncoso Fernandez Bada,
B. Bertrand,
M. Cassé,
Y. M. Niquet,
S. de Franceschi,
T. Meunier,
M. Vinet
Abstract:
In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line characteristics (geometry and configuration, stack and material properties) and the electromagnetic (EM) environment at the vicinity of the qubits such as gates and interconnect network. With the accurate assessment of the mag…
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In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line characteristics (geometry and configuration, stack and material properties) and the electromagnetic (EM) environment at the vicinity of the qubits such as gates and interconnect network. With the accurate assessment of the magnetic and electric field distribution, we found that the EM environment of the qubits contributes significantly to the ESR line efficiency for spin control characterized by the magnetic over electric field ratio generated at the qubit location.
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Submitted 7 April, 2023;
originally announced April 2023.
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Quantum dynamics for energetic advantage in a charge-based classical full-adder
Authors:
João P. Moutinho,
Marco Pezzutto,
Sagar Pratapsi,
Francisco Ferreira da Silva,
Silvano De Franceschi,
Sougato Bose,
António T. Costa,
Yasser Omar
Abstract:
We present a proposal for a one-bit full-adder to process classical information based on the quantum reversible dynamics of a triple quantum dot system. The device works via the repeated execution of a Fredkin gate implemented through the dynamics of a single time-independent Hamiltonian. Our proposal uses realistic parameter values and could be implemented on currently available quantum dot archi…
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We present a proposal for a one-bit full-adder to process classical information based on the quantum reversible dynamics of a triple quantum dot system. The device works via the repeated execution of a Fredkin gate implemented through the dynamics of a single time-independent Hamiltonian. Our proposal uses realistic parameter values and could be implemented on currently available quantum dot architectures. We compare the estimated energy requirements for operating our full-adder with those of well-known fully classical devices, and argue that our proposal may provide a consistently better energy efficiency. Our work serves as a proof of principle for the development of energy-efficient information technologies operating through coherent quantum dynamics.
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Submitted 29 July, 2022; v1 submitted 28 June, 2022;
originally announced June 2022.
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Strong coupling between a photon and a hole spin in silicon
Authors:
Cécile X. Yu,
Simon Zihlmann,
José C. Abadillo-Uriel,
Vincent P. Michal,
Nils Rambal,
Heimanu Niebojewski,
Thomas Bedecarrats,
Maud Vinet,
Etienne Dumur,
Michele Filippone,
Benoit Bertrand,
Silvano De Franceschi,
Yann-Michel Niquet,
Romain Maurand
Abstract:
Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbor quantum interactions. Here we demonstrate strong coupling between a microwave photon in a supe…
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Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbor quantum interactions. Here we demonstrate strong coupling between a microwave photon in a superconducting resonator and a hole spin in a silicon-based double quantum dot issued from a foundry-compatible MOS fabrication process. By leveraging the strong spin-orbit interaction intrinsically present in the valence band of silicon, we achieve a spin-photon coupling rate as high as 330~MHz largely exceeding the combined spin-photon decoherence rate. This result, together with the recently demonstrated long coherence of hole spins in silicon, opens a new realistic pathway to the development of circuit quantum electrodynamics with spins in semiconductor quantum dots.
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Submitted 9 May, 2023; v1 submitted 28 June, 2022;
originally announced June 2022.
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Compact gate-based read-out of multiplexed quantum devices with a cryogenic CMOS active inductor
Authors:
L. Le Guevel,
G. Billiot,
S. De Franceschi,
A. Morel,
X. Jehl,
A. G. M. Jansen,
G. Pillonnet
Abstract:
In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit incorporating a CMOS-based active inductor enabling fast impedance measurements with a sensitivity of 10 aF and an input-referred noise of 3.7 aF/sqrt(Hz). This type of…
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In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit incorporating a CMOS-based active inductor enabling fast impedance measurements with a sensitivity of 10 aF and an input-referred noise of 3.7 aF/sqrt(Hz). This type of circuit is especially conceived for the readout of semiconductor spin qubits. As opposed to commonly used schemes based on dispersive rf reflectometry, which require mm-scale passive inductors, it allows for a markedly reduced footprint (50$μ$m $\times$ 60$μ$m), facilitating its integration in a scalable quantum-classical architecture. In addition, its active inductor results in a resonant circuit with tunable frequency and quality factor, enabling the optimization of readout sensitivity.
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Submitted 9 February, 2021; v1 submitted 8 February, 2021;
originally announced February 2021.
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arXiv:2102.02644
[pdf]
cond-mat.mes-hall
cond-mat.mtrl-sci
cond-mat.str-el
cond-mat.supr-con
quant-ph
The 2021 Quantum Materials Roadmap
Authors:
Feliciano Giustino,
** Hong Lee,
Felix Trier,
Manuel Bibes,
Stephen M Winter,
Roser Valentí,
Young-Woo Son,
Louis Taillefer,
Christoph Heil,
Adriana I. Figueroa,
Bernard Plaçais,
QuanSheng Wu,
Oleg V. Yazyev,
Erik P. A. M. Bakkers,
Jesper Nygård,
Pol Forn-Diaz,
Silvano De Franceschi,
J. W. McIver,
L. E. F. Foa Torres,
Tony Low,
Anshuman Kumar,
Regina Galceran,
Sergio O. Valenzuela,
Marius V. Costache,
Aurélien Manchon
, et al. (4 additional authors not shown)
Abstract:
In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topologi…
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In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to sha** a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry.
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Submitted 4 February, 2021;
originally announced February 2021.
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Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives
Authors:
M. F. Gonzalez-Zalba,
S. de Franceschi,
E. Charbon,
T. Meunier,
M. Vinet,
A. S. Dzurak
Abstract:
Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance, a strategy that has been recently hampered by the increasing complexity and cost of miniaturization. To continue achieving significant gains in compu…
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Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance, a strategy that has been recently hampered by the increasing complexity and cost of miniaturization. To continue achieving significant gains in computing performance, new computing paradigms, such as quantum computing, must be developed. However, finding the optimal physical system to process quantum information, and scale it up to the large number of qubits necessary to build a general-purpose quantum computer, remains a significant challenge. Recent breakthroughs in nanodevice engineering have shown that qubits can now be manufactured in a similar fashion to silicon field-effect transistors, opening an opportunity to leverage the know-how of the CMOS industry to address the scaling challenge. In this article, we focus on the analysis of the scaling prospects of quantum computing systems based on CMOS technology.
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Submitted 8 April, 2023; v1 submitted 23 November, 2020;
originally announced November 2020.
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Semiconductor Qubits In Practice
Authors:
Anasua Chatterjee,
Paul Stevenson,
Silvano De Franceschi,
Andrea Morello,
Nathalie de Leon,
Ferdinand Kuemmeth
Abstract:
In recent years semiconducting qubits have undergone a remarkable evolution, making great strides in overcoming decoherence as well as in prospects for scalability, and have become one of the leading contenders for the development of large-scale quantum circuits. In this Review we describe the current state of the art in semiconductor charge and spin qubits based on gate-controlled semiconductor q…
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In recent years semiconducting qubits have undergone a remarkable evolution, making great strides in overcoming decoherence as well as in prospects for scalability, and have become one of the leading contenders for the development of large-scale quantum circuits. In this Review we describe the current state of the art in semiconductor charge and spin qubits based on gate-controlled semiconductor quantum dots, shallow dopants, and color centers in wide band gap materials. We frame the relative strengths of the different semiconductor qubit implementations in the context of quantum simulations, computing, sensing and networks. By highlighting the status and future perspectives of the basic types of semiconductor qubits, this Review aims to serve as a technical introduction for non-specialists as well as a forward-looking reference for scientists intending to work in this field.
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Submitted 13 May, 2020;
originally announced May 2020.
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The germanium quantum information route
Authors:
Giordano Scappucci,
Christoph Kloeffel,
Floris A. Zwanenburg,
Daniel Loss,
Maksym Myronov,
Jian-Jun Zhang,
Silvano De Franceschi,
Georgios Katsaros,
Menno Veldhorst
Abstract:
In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties of the germanium valence-band states, commonly known as holes, such as their inherently strong spin-orbit coupling and the ability to host superconducting pairi…
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In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties of the germanium valence-band states, commonly known as holes, such as their inherently strong spin-orbit coupling and the ability to host superconducting pairing correlations. In this Review, we initially introduce the physics of holes in low-dimensional germanium structures with key insights from a theoretical perspective. We then examine the material science progress underpinning germanium-based planar heterostructures and nanowires. We review the most significant experimental results demonstrating key building blocks for quantum technology, such as an electrically driven universal quantum gate set with spin qubits in quantum dots and superconductor-semiconductor devices for hybrid quantum systems. We conclude by identifying the most promising prospects toward scalable quantum information processing.
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Submitted 17 April, 2020;
originally announced April 2020.
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28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing
Authors:
H. Bohuslavskyi,
S. Barraud,
M. Cassé,
V. Barral,
B. Bertrand,
L. Hutin,
F. Arnaud,
P. Galy,
M. Sanquer,
S. De Franceschi,
M. Vinet
Abstract:
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent $V_{TH}$ controllability. Low-temperature operation enables higher d…
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This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent $V_{TH}$ controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.
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Submitted 20 December, 2019;
originally announced February 2020.
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Germanium quantum well Josephson field effect transistors and interferometers
Authors:
Florian Vigneau,
Raisei Mizokuchi,
Dante Colao Zanuz,
XuHai Huang,
Susheng Tan,
Romain Maurand,
Sergey Frolov,
Amir Sammak,
Giordano Scappucci,
François Lefloch,
Silvano De Franceschi
Abstract:
Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as gate-tunable superconducting quantum bits. Here we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum supe…
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Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as gate-tunable superconducting quantum bits. Here we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum superconducting leads to realize prototypical hybrid devices, such as Josephson field-effect transistors (JoFETs) and superconducting quantum interference devices (SQUIDs). We observe gate-controlled supercurrent transport with Ge channels as long as one micrometer and estimate the induced superconducting gap from tunnel spectroscopy measurements in superconducting point-contact devices. Transmission electron microscopy reveals the diffusion of Ge into the aluminum contacts, whereas no aluminum is detected in the Ge channel.
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Submitted 23 October, 2018; v1 submitted 11 October, 2018;
originally announced October 2018.
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Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing
Authors:
Arnout Beckers,
Farzan Jazaeri,
Heorhii Bohuslavskyi,
Louis Hutin,
Silvano De Franceschi,
Christian Enz
Abstract:
In this paper a commercial 28-nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and interface traps on this technology starting from the fundamental device physics. We then illustrate how these phenomena can be accounted for in circuit device-models. We find that the design-oriented simplified EKV model…
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In this paper a commercial 28-nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and interface traps on this technology starting from the fundamental device physics. We then illustrate how these phenomena can be accounted for in circuit device-models. We find that the design-oriented simplified EKV model can accurately predict the impact of the temperature reduction on the transfer characteristics, back-gate sensitivity, and transconductance efficiency. The presented results aim at extending industry-standard compact models to cryogenic temperatures for the design of cryo- CMOS circuits implemented in a 28 nm FDSOI technology.
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Submitted 16 August, 2018;
originally announced August 2018.
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A CMOS silicon spin qubit
Authors:
R. Maurand,
X. Jehl,
D. Kotekar Patil,
A. Corna,
H. Bohuslavskyi,
R. Laviéville,
L. Hutin,
S. Barraud,
M. Vinet,
M. Sanquer,
S. De Franceschi
Abstract:
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silic…
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Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot (QD) encoding a hole spin qubit, the second one a QD used for the qubit readout. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. Our result opens a viable path to qubit up-scaling through a readily exploitable CMOS platform.
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Submitted 24 May, 2016;
originally announced May 2016.
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Coupling and coherent electrical control of two dopants in a silicon nanowire
Authors:
E. Dupont-Ferrier,
B. Roche,
B. Voisin,
X. Jehl,
R. Wacquez,
M. Vinet,
M. Sanquer,
S. De Franceschi
Abstract:
Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon technology, leading to the realization of single-atom transistors and to the first measurements of electron spin dynamics in single donors. Here we show that we…
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Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon technology, leading to the realization of single-atom transistors and to the first measurements of electron spin dynamics in single donors. Here we show that we can electrically couple two donors embedded in a multi-gate silicon transistor, and induce coherent oscillations in their charge states by means of microwave signals. We measure single-electron tunneling across the two donors, which reveals their energy spectrum. The lowest energy states, corresponding to a single electron located on either of the two donors, form a two-level system (TLS) well separated from all other electronic levels. Gigahertz driving of this TLS results in a quantum interference pattern associated with the absorption or the stimulated emission of up to ten microwave photons. We estimate a charge dephasing time of 0.3 nanoseconds, consistent with other types of charge quantum bits. Here, however, the relatively short coherence time can be counterbalanced by fast operation signals (in principle up to 1 terahertz) as allowed by the large empty energy window separating ground and excited states in donor atoms. The demonstrated coherent coupling of two donors constitutes an essential step towards donor-based quantum computing devices in silicon.
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Submitted 8 July, 2012;
originally announced July 2012.
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Quantum Computing with Electron Spins in Quantum Dots
Authors:
L. M. K. Vandersypen,
R. Hanson,
L. H. Willems van Beveren,
J. M. Elzerman,
J. S. Greidanus,
S. De Franceschi,
L. P. Kouwenhoven
Abstract:
We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable spin-polarization. Read-out hinges on spin-to-charge conversion via spin-selective tunneling to or from the leads, followed by measurement of the number of elect…
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We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable spin-polarization. Read-out hinges on spin-to-charge conversion via spin-selective tunneling to or from the leads, followed by measurement of the number of electron charges on the dot via a charge detector. Single-qubit manipulation relies on a microfabricated wire located close to the quantum dot, and two-qubit interactions are controlled via the tunnel barrier connecting the respective quantum dots. Based on these ideas, we have begun a series of experiments in order to demonstrate unitary control and to measure the coherence time of individual electron spins in quantum dots.
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Submitted 10 July, 2002;
originally announced July 2002.
