A Race Track Trapped-Ion Quantum Processor
Authors:
S. A. Moses,
C. H. Baldwin,
M. S. Allman,
R. Ancona,
L. Ascarrunz,
C. Barnes,
J. Bartolotta,
B. Bjork,
P. Blanchard,
M. Bohn,
J. G. Bohnet,
N. C. Brown,
N. Q. Burdick,
W. C. Burton,
S. L. Campbell,
J. P. Campora III,
C. Carron,
J. Chambers,
J. W. Chan,
Y. H. Chen,
A. Chernoguzov,
E. Chertkov,
J. Colina,
J. P. Curtis,
R. Daniel
, et al. (71 additional authors not shown)
Abstract:
We describe and benchmark a new quantum charge-coupled device (QCCD) trapped-ion quantum computer based on a linear trap with periodic boundary conditions, which resembles a race track. The new system successfully incorporates several technologies crucial to future scalability, including electrode broadcasting, multi-layer RF routing, and magneto-optical trap (MOT) loading, while maintaining, and…
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We describe and benchmark a new quantum charge-coupled device (QCCD) trapped-ion quantum computer based on a linear trap with periodic boundary conditions, which resembles a race track. The new system successfully incorporates several technologies crucial to future scalability, including electrode broadcasting, multi-layer RF routing, and magneto-optical trap (MOT) loading, while maintaining, and in some cases exceeding, the gate fidelities of previous QCCD systems. The system is initially operated with 32 qubits, but future upgrades will allow for more. We benchmark the performance of primitive operations, including an average state preparation and measurement error of 1.6(1)$\times 10^{-3}$, an average single-qubit gate infidelity of $2.5(3)\times 10^{-5}$, and an average two-qubit gate infidelity of $1.84(5)\times 10^{-3}$. The system-level performance of the quantum processor is assessed with mirror benchmarking, linear cross-entropy benchmarking, a quantum volume measurement of $\mathrm{QV}=2^{16}$, and the creation of 32-qubit entanglement in a GHZ state. We also tested application benchmarks including Hamiltonian simulation, QAOA, error correction on a repetition code, and dynamics simulations using qubit reuse. We also discuss future upgrades to the new system aimed at adding more qubits and capabilities.
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Submitted 16 May, 2023; v1 submitted 5 May, 2023;
originally announced May 2023.
Toward durable Al-InSb hybrid heterostructures via epitaxy of 2ML interfacial InAs screening layers
Authors:
Candice Thomas,
Rosa E. Diaz,
J. Houston Dycus,
Michael E. Salmon,
Roger E. Daniel,
Tiantian Wang,
Geoffrey C. Gardner,
Michael J. Manfra
Abstract:
The large Landé g-factor, high spin-orbit coupling, and low effective mass of the two-dimensional electron gas in InSb quantum wells combined with proximal superconductivity may realize a scalable platform for topological quantum computation. Aluminum thin films directly deposited on top of InSb planar structures result in the formation of a reactive AlInSb layer at the interface. This interlayer…
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The large Landé g-factor, high spin-orbit coupling, and low effective mass of the two-dimensional electron gas in InSb quantum wells combined with proximal superconductivity may realize a scalable platform for topological quantum computation. Aluminum thin films directly deposited on top of InSb planar structures result in the formation of a reactive AlInSb layer at the interface. This interlayer progressively consumes the whole Al film, resulting in a disordered AlInSb layer after few months at room temperature. We report on a heterostructure design that results in a significant increase of the durability of these hybrid Al-InSb heterostructures with the preservation of a pure Al film and sharp superconductor-semiconductor interface for more than one year. Two monolayers of epitaxial InAs at the superconductor-semiconductor interface prevent interfacial reactivity as evidenced by X-ray reflectivity and energy dispersive spectroscopy measurements. Structural characterizations of the Al films by transmission electron microscopy reveal the presence of tens of nanometers wide grains predominantly oriented with Al(110) parallel to InSb(001).
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Submitted 8 October, 2019;
originally announced October 2019.
