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Optomechanical ring resonator for efficient microwave-optical frequency conversion
Authors:
I-Tung Chen,
Bingzhao Li,
Seokhyeong Lee,
Srivatsa Chakravarthi,
Kai-Mei Fu,
Mo Li
Abstract:
Phonons traveling in solid-state devices are emerging as a universal excitation that can couple to different physical systems through mechanical interaction. At microwave frequencies and in solid-state materials, phonons have a similar wavelength to optical photons, enabling them to interact efficiently with light and produce strong optomechanical effects that are highly desirable for classical an…
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Phonons traveling in solid-state devices are emerging as a universal excitation that can couple to different physical systems through mechanical interaction. At microwave frequencies and in solid-state materials, phonons have a similar wavelength to optical photons, enabling them to interact efficiently with light and produce strong optomechanical effects that are highly desirable for classical and quantum signal transduction between optical and microwave. It becomes conceivable to build optomechanical integrated circuits (OMIC) that guide both photons and phonons and interconnect discrete photonic and phononic devices. Here, we demonstrate an OMIC including an optomechanical ring resonator (OMR), in which infrared photons and GHz phonons co-resonate to induce significantly enhanced interconversion. The OMIC is built on a hybrid platform where wide bandgap semiconductor gallium phosphide (GaP) is used as the waveguiding material and piezoelectric zinc oxide (ZnO) is used for phonon generation. The OMR features photonic and phononic quality factors of $>1\times10^5$ and $3.2\times10^3$, respectively, and resonantly enhances the optomechanical conversion between photonic modes to achieve an internal conversion efficiency $η_i=(2.1\pm0.1)%$ and a total device efficiency $η_{tot}=0.57\times10^{-6}$ at a low acoustic pump power of 1.6 mW. The efficient conversion in OMICs enables microwave-optical transduction for many applications in quantum information processing and microwave photonics.
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Submitted 16 November, 2023; v1 submitted 10 November, 2023;
originally announced November 2023.
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Tunable phononic coupling in excitonic quantum emitters
Authors:
Adina Ripin,
Ruoming Peng,
Xiaowei Zhang,
Srivatsa Chakravarthi,
Minhao He,
Xiaodong Xu,
Kai-Mei Fu,
Ting Cao,
Mo Li
Abstract:
Engineering the coupling between fundamental quantum excitations is at the heart of quantum science and technologies. A significant case is the creation of quantum light sources in which coupling between single photons and phonons can be controlled and harnessed to enable quantum information transduction. Here, we report the deterministic creation of quantum emitters featuring highly tunable coupl…
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Engineering the coupling between fundamental quantum excitations is at the heart of quantum science and technologies. A significant case is the creation of quantum light sources in which coupling between single photons and phonons can be controlled and harnessed to enable quantum information transduction. Here, we report the deterministic creation of quantum emitters featuring highly tunable coupling between excitons and phonons. The quantum emitters are formed in strain-induced quantum dots created in homobilayer semiconductor WSe2. The colocalization of quantum confined interlayer excitons and THz interlayer breathing mode phonons, which directly modulate the exciton energy, leads to a uniquely strong phonon coupling to single-photon emission. The single-photon spectrum of interlayer exciton emission features a single-photon purity >83% and multiple phonon replicas, each heralding the creation of a phonon Fock state in the quantum emitter. Owing to the vertical dipole moment of the interlayer exciton, the phonon-photon interaction is electrically tunable in a wide range, promising to reach the strong coupling regime. Our result demonstrates a new type of solid-state quantum excitonic-optomechanical system at the atomic interface that emits flying photonic qubits coupled with stationary phonons, which could be exploited for quantum transduction and interconnection.
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Submitted 26 February, 2023;
originally announced February 2023.
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Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer
Authors:
Srivatsa Chakravarthi,
Nicholas S. Yama,
Alex Abulnaga,
Ding Huang,
Christian Pederson,
Karine Hestroffer,
Fariba Hatami,
Nathalie P. de Leon,
Kai-Mei C. Fu
Abstract:
Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV)…
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Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stam** process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors ($Q$) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with $Q$ of 4100, we observe a three-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of $C = 2$. These results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.
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Submitted 13 December, 2022; v1 submitted 9 December, 2022;
originally announced December 2022.
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Impact of surface and laser-induced noise on the spectral stability of implanted nitrogen-vacancy centers in diamond
Authors:
Srivatsa Chakravarthi,
Christian Pederson,
Zeeshawn Kazi,
Andrew Ivanov,
Kai-Mei C. Fu
Abstract:
Scalable realizations of quantum network technologies utilizing the nitrogen vacancy center in diamond require creation of optically coherent NV centers in close proximity to a surface for coupling to optical structures. We create single NV centers by $^{15}$N ion implantation and high-temperature vacuum annealing. Origin of the NV centers is established by optically detected magnetic resonance sp…
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Scalable realizations of quantum network technologies utilizing the nitrogen vacancy center in diamond require creation of optically coherent NV centers in close proximity to a surface for coupling to optical structures. We create single NV centers by $^{15}$N ion implantation and high-temperature vacuum annealing. Origin of the NV centers is established by optically detected magnetic resonance spectroscopy for nitrogen isotope identification. Near lifetime-limited optical linewidths ($<$ 60 MHz) are observed for the majority of the normal-implant (7$^\circ$, $\approx$ 100 nm deep) $^{15}$NV centers. Long-term stability of the NV$^-$ charge state and emission frequency is demonstrated. The effect of NV-surface interaction is investigated by varying the implantation angle for a fixed ion-energy, and thus lattice damage profile. In contrast to the normal implant condition, NVs from an oblique-implant (85$^\circ$, $\approx$ 20 nm deep) exhibit substantially reduced optical coherence. Our results imply that the surface is a larger source of perturbation than implantation damage for shallow implanted NVs. This work supports the viability of ion implantation for formation of optically stable NV centers. However, careful surface preparation will be necessary for scalable defect engineering.
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Submitted 6 August, 2021; v1 submitted 19 May, 2021;
originally announced May 2021.
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Inverse-designed photon extractors for optically addressable defect qubits
Authors:
Srivatsa Chakravarthi,
Pengning Chao,
Christian Pederson,
Sean Molesky,
Andrew Ivanov,
Karine Hestroffer,
Fariba Hatami,
Alejandro W. Rodriguez,
Kai-Mei C. Fu
Abstract:
Solid-state defect qubit systems with spin-photon interfaces show great promise for quantum information and metrology applications. Photon collection efficiency, however, presents a major challenge for defect qubits in high refractive index host materials. Inverse-design optimization of photonic devices enables unprecedented flexibility in tailoring critical parameters of a spin-photon interface i…
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Solid-state defect qubit systems with spin-photon interfaces show great promise for quantum information and metrology applications. Photon collection efficiency, however, presents a major challenge for defect qubits in high refractive index host materials. Inverse-design optimization of photonic devices enables unprecedented flexibility in tailoring critical parameters of a spin-photon interface including spectral response, photon polarization and collection mode. Further, the design process can incorporate additional constraints, such as fabrication tolerance and material processing limitations. Here we design and demonstrate a compact hybrid gallium phosphide on diamond inverse-design planar dielectric structure coupled to single near-surface nitrogen-vacancy centers formed by implantation and annealing. We observe device operation near the theoretical limit and measure up to a 14-fold broadband enhancement in photon extraction efficiency. We expect that such inverse-designed devices will enable realization of scalable arrays of single-photon emitters, rapid characterization of new quantum emitters, sensing and efficient heralded entanglement schemes.
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Submitted 15 December, 2020; v1 submitted 24 July, 2020;
originally announced July 2020.
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A window into NV center kinetics via repeated annealing and spatial tracking of thousands of individual NV centers
Authors:
Srivatsa Chakravarthi,
Chris Moore,
April Opsvig,
Christian Pederson,
Emma Hunt,
Andrew Ivanov,
Ian Christen,
Scott Dunham,
Kai-Mei C Fu
Abstract:
Knowledge of the nitrogen-vacancy center formation kinetics in diamond is critical to engineering sensors and quantum information devices based on this defect. Here we utilize the longitudinal tracking of single NV centers to elucidate NV defect kinetics during high-temperature annealing from 800-1100 $^\circ$C in high-purity chemical-vapor-deposition diamond. We observe three phenomena which can…
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Knowledge of the nitrogen-vacancy center formation kinetics in diamond is critical to engineering sensors and quantum information devices based on this defect. Here we utilize the longitudinal tracking of single NV centers to elucidate NV defect kinetics during high-temperature annealing from 800-1100 $^\circ$C in high-purity chemical-vapor-deposition diamond. We observe three phenomena which can coexist: NV formation, NV quenching, and NV orientation changes. Of relevance to NV-based applications, a 6 to 24-fold enhancement in the NV density, in the absence of sample irradiation, is observed by annealing at 980 $^\circ$C, and NV orientation changes are observed at 1050 $^\circ$C. With respect to the fundamental understanding of defect kinetics in ultra-pure diamond, our results indicate a significant vacancy source can be activated for NV creation between 950-980 $^\circ$C and suggests that native hydrogen from NVH$_y$ complexes plays a dominant role in NV quenching, in agreement with recent {\it ab initio} calculations. Finally, the direct observation of orientation changes allows us to estimate an NV diffusion barrier of 5.1~eV.
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Submitted 23 November, 2019; v1 submitted 17 July, 2019;
originally announced July 2019.
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Frequency control of single quantum emitters in integrated photonic circuits
Authors:
Emma R. Schmidgall,
Srivatsa Chakravarthi,
Michael Gould,
Ian R. Christen,
Karine Hestroffer,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect…
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Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.
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Submitted 23 February, 2018;
originally announced February 2018.
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A Large-Scale GaP-on-Diamond Integrated Photonics Platform for NV Center-Based Quantum Information
Authors:
Michael Gould,
Srivatsa Chakravarthi,
Ian R. Christen,
Nicole Thomas,
Shabnam Dadgostar,
Yuncheng Song,
Minjoo Larry Lee,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place th…
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We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place the platform in a strong position to realize measurement-based quantum information protocols utilizing the NV center in diamond.
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Submitted 16 October, 2015;
originally announced October 2015.
