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Experimental quantum channel discrimination using metastable states of a trapped ion
Authors:
Kyle DeBry,
Jasmine Sinanan-Singh,
Colin D. Bruzewicz,
David Reens,
May E. Kim,
Matthew P. Roychowdhury,
Robert McConnell,
Isaac L. Chuang,
John Chiaverini
Abstract:
We present experimental demonstrations of accurate and unambiguous single-shot discrimination between three quantum channels using a single trapped $^{40}\text{Ca}^{+}$ ion. The three channels cannot be distinguished unambiguously using repeated single channel queries, the natural classical analogue. We develop techniques for using the 6-dimensional $\text{D}_{5/2}$ state space for quantum informa…
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We present experimental demonstrations of accurate and unambiguous single-shot discrimination between three quantum channels using a single trapped $^{40}\text{Ca}^{+}$ ion. The three channels cannot be distinguished unambiguously using repeated single channel queries, the natural classical analogue. We develop techniques for using the 6-dimensional $\text{D}_{5/2}$ state space for quantum information processing, and we implement protocols to discriminate quantum channel analogues of phase shift keying and amplitude shift keying data encodings used in classical radio communication. The demonstrations achieve discrimination accuracy exceeding $99\%$ in each case, limited entirely by known experimental imperfections.
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Submitted 6 November, 2023; v1 submitted 23 May, 2023;
originally announced May 2023.
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Ablation loading of barium ions into a surface electrode trap
Authors:
X. Shi,
S. L. Todaro,
G. L. Mintzer,
C. D. Bruzewicz,
J. Chiaverini,
I. L. Chuang
Abstract:
Trapped-ion quantum information processing may benefit from qubits encoded in isotopes that are practically available in only small quantities, e.g. due to low natural abundance or radioactivity. Laser ablation provides a method of controllably liberating neutral atoms or ions from low-volume targets, but energetic ablation products can be difficult to confine in the small ion-electrode distance,…
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Trapped-ion quantum information processing may benefit from qubits encoded in isotopes that are practically available in only small quantities, e.g. due to low natural abundance or radioactivity. Laser ablation provides a method of controllably liberating neutral atoms or ions from low-volume targets, but energetic ablation products can be difficult to confine in the small ion-electrode distance, micron-scale, microfabricated traps amenable to high-speed, high-fidelity manipulation of ion arrays. Here we investigate ablation-based ion loading into surface-electrode traps of different sizes to test a model describing ion loading probability as a function of effective trap volume and other trap parameters. We demonstrate loading of ablated and photoionized barium in two cryogenic surface-electrode traps with 730 $μ$m and 50 $μ$m ion-electrode distances. Our loading success probability agrees with a predictive analytical model, providing insight for the confinement of limited-quantity species of interest for quantum computing, simulation, and sensing.
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Submitted 3 March, 2023;
originally announced March 2023.
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High-Fidelity Ion State Detection Using Trap-Integrated Avalanche Photodiodes
Authors:
David Reens,
Michael Collins,
Joseph Ciampi,
Dave Kharas,
Brian F. Aull,
Kevan Donlon,
Colin D. Bruzewicz,
Bradley Felton,
Jules Stuart,
Robert J. Niffenegger,
Philip Rich,
Danielle Braje,
Kevin K. Ryu,
John Chiaverini,
Robert McConnell
Abstract:
Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at ea…
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Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at each ion-trap** location. Here we demonstrate ion quantum state detection at room temperature utilizing single-photon avalanche diodes (SPADs) integrated directly into the substrate of silicon ion trap** chips. We detect the state of a trapped $^{88}\text{Sr}^{+}$ ion via fluorescence collection with the SPAD, achieving $99.92(1)\%$ average fidelity in 450 $μ$s, opening the door to the application of integrated state detection to quantum computing and sensing utilizing arrays of trapped ions.
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Submitted 3 February, 2022;
originally announced February 2022.
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A Brillouin Laser Optical Atomic Clock
Authors:
William Loh,
Jules Stuart,
David Reens,
Colin D. Bruzewicz,
Danielle Braje,
John Chiaverini,
Paul W. Juodawlkis,
Jeremy M. Sage,
Robert McConnell
Abstract:
Over the last decade, optical atomic clocks have surpassed their microwave counterparts and now offer the ability to measure time with an increase in precision of two orders of magnitude or more. This performance increase is compelling not only for enabling new science, such as geodetic measurements of the earth, searches for dark matter, and investigations into possible long-term variations of fu…
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Over the last decade, optical atomic clocks have surpassed their microwave counterparts and now offer the ability to measure time with an increase in precision of two orders of magnitude or more. This performance increase is compelling not only for enabling new science, such as geodetic measurements of the earth, searches for dark matter, and investigations into possible long-term variations of fundamental physics constants but also for revolutionizing existing technology, such as the global positioning system (GPS). A significant remaining challenge is to transition these optical clocks to non-laboratory environments, which requires the ruggedization and miniaturization of the atomic reference and clock laser along with their supporting lasers and electronics. Here, using a compact stimulated Brillouin scattering (SBS) laser to interrogate a $^8$$^8$Sr$^+$ ion, we demonstrate a promising component of a portable optical atomic clock architecture. In order to bring the stability of the SBS laser to a level suitable for clock operation, we utilize a self-referencing technique to compensate for temperature drift of the laser to within $170$ nK. Our SBS optical clock achieves a short-term stability of $3.9 \times 10^{-14}$ at $1$ s---an order of magnitude improvement over state-of-the-art microwave clocks. Based on this technology, a future GPS employing portable SBS clocks offers the potential for distance measurements with a 100-fold increase in resolution.
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Submitted 15 January, 2020;
originally announced January 2020.
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Integrated multi-wavelength control of an ion qubit
Authors:
Robert J. Niffenegger,
Jules Stuart,
Cheryl Sorace-Agaskar,
Dave Kharas,
Suraj Bramhavar,
Colin D. Bruzewicz,
William Loh,
Ryan T. Maxson,
Robert McConnell,
David Reens,
Gavin N. West,
Jeremy M. Sage,
John Chiaverini
Abstract:
Monolithic integration of control technologies for atomic systems is a promising route to the development of quantum computers and portable quantum sensors. Trapped atomic ions form the basis of high-fidelity quantum information processors and high-accuracy optical clocks. However, current implementations rely on free-space optics for ion control, which limits their portability and scalability. He…
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Monolithic integration of control technologies for atomic systems is a promising route to the development of quantum computers and portable quantum sensors. Trapped atomic ions form the basis of high-fidelity quantum information processors and high-accuracy optical clocks. However, current implementations rely on free-space optics for ion control, which limits their portability and scalability. Here we demonstrate a surface-electrode ion-trap chip using integrated waveguides and grating couplers, which delivers all the wavelengths of light required for ionization, cooling, coherent operations, and quantum-state preparation and detection of Sr+ qubits. Laser light from violet to infrared is coupled onto the chip via an optical-fiber array, creating an inherently stable optical path, which we use to demonstrate qubit coherence that is resilient to platform vibrations. This demonstration of CMOS-compatible integrated-photonic surface-trap fabrication, robust packaging, and enhanced qubit coherence is a key advance in the development of portable trapped-ion quantum sensors and clocks, providing a way toward the complete, individual control of larger numbers of ions in quantum information processing systems.
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Submitted 2 January, 2021; v1 submitted 14 January, 2020;
originally announced January 2020.
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Dual-Species, Multi-Qubit Logic Primitives for Ca+/Sr+ Trapped-Ion Crystals
Authors:
C. D. Bruzewicz,
R. McConnell,
J. Stuart,
J. M. Sage,
J. Chiaverini
Abstract:
We demonstrate key multi-qubit quantum logic primitives in a dual-species trapped-ion system based on $^{40}$Ca+ and $^{88}$Sr+ ions, using two optical qubits with quantum-logic-control frequencies in the red to near-infrared range. With all ionization, cooling, and control wavelengths in a wavelength band similar for the two species and centered in the visible, and with a favorable mass ratio for…
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We demonstrate key multi-qubit quantum logic primitives in a dual-species trapped-ion system based on $^{40}$Ca+ and $^{88}$Sr+ ions, using two optical qubits with quantum-logic-control frequencies in the red to near-infrared range. With all ionization, cooling, and control wavelengths in a wavelength band similar for the two species and centered in the visible, and with a favorable mass ratio for sympathetic cooling, this pair is a promising candidate for scalable quantum information processing. Same-species and dual-species two-qubit gates, based on the Moelmer-Soerensen interaction and performed in a cryogenic surface-electrode trap, are characterized via the fidelity of generated entangled states; we achieve fidelities of 98.8(2)% and 97.5(2)% in Ca+ - Ca+ and Sr+ - Sr+ gates, respectively. For a similar Ca+ - Sr+ gate, we achieve a fidelity of 94.3(3)%, and carrying out a Sr+ - Sr+ gate performed with a Ca+ sympathetic cooling ion in a Sr+ - Ca+ - Sr+ crystal configuration, we achieve a fidelity of 95.7(3)%. These primitives form a set of trapped-ion capabilities for logic with sympathetic cooling and ancilla readout or state transfer for general quantum computing and communication applications.
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Submitted 30 May, 2019;
originally announced May 2019.
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Trapped-Ion Quantum Computing: Progress and Challenges
Authors:
Colin D. Bruzewicz,
John Chiaverini,
Robert McConnell,
Jeremy M. Sage
Abstract:
Trapped ions are among the most promising systems for practical quantum computing (QC). The basic requirements for universal QC have all been demonstrated with ions and quantum algorithms using few-ion-qubit systems have been implemented. We review the state of the field, covering the basics of how trapped ions are used for QC and their strengths and limitations as qubits. In addition, we discuss…
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Trapped ions are among the most promising systems for practical quantum computing (QC). The basic requirements for universal QC have all been demonstrated with ions and quantum algorithms using few-ion-qubit systems have been implemented. We review the state of the field, covering the basics of how trapped ions are used for QC and their strengths and limitations as qubits. In addition, we discuss what is being done, and what may be required, to increase the scale of trapped ion quantum computers while mitigating decoherence and control errors. Finally, we explore the outlook for trapped-ion QC. In particular, we discuss near-term applications, considerations impacting the design of future systems of trapped ions, and experiments and demonstrations that may further inform these considerations.
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Submitted 8 April, 2019;
originally announced April 2019.
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Chip-integrated voltage sources for control of trapped ions
Authors:
J. Stuart,
R. Panock,
C. D. Bruzewicz,
J. A. Sedlacek,
R. McConnell,
I. L. Chuang,
J. M. Sage,
J. Chiaverini
Abstract:
Trapped-ion quantum information processors offer many advantages for achieving high-fidelity operations on a large number of qubits, but current experiments require bulky external equipment for classical and quantum control of many ions. We demonstrate the cryogenic operation of an ion-trap that incorporates monolithically-integrated high-voltage CMOS electronics ($\pm 8\mathrm{V}$ full swing) to…
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Trapped-ion quantum information processors offer many advantages for achieving high-fidelity operations on a large number of qubits, but current experiments require bulky external equipment for classical and quantum control of many ions. We demonstrate the cryogenic operation of an ion-trap that incorporates monolithically-integrated high-voltage CMOS electronics ($\pm 8\mathrm{V}$ full swing) to generate surface-electrode control potentials without the need for external, analog voltage sources. A serial bus programs an array of 16 digital-to-analog converters (DACs) within a single chip that apply voltages to segmented electrodes on the chip to control ion motion. Additionally, we present the incorporation of an integrated circuit that uses an analog switch to reduce voltage noise on trap electrodes due to the integrated amplifiers by over $50\mathrm{dB}$. We verify the function of our integrated electronics by performing diagnostics with trapped ions and find noise and speed performance similar to those we observe using external control elements.
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Submitted 16 October, 2018;
originally announced October 2018.
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Evidence for multiple mechanisms underlying surface electric-field noise in ion traps
Authors:
J. A. Sedlacek,
J. Stuart,
D. H. Slichter,
C. D. Bruzewicz,
R. McConnell,
J. M. Sage,
J. Chiaverini
Abstract:
Electric-field noise from ion-trap electrode surfaces can limit the fidelity of multiqubit entangling operations in trapped-ion quantum information processors and can give rise to systematic errors in trapped-ion optical clocks. The underlying mechanism for this noise is unknown, but it has been shown that the noise amplitude can be reduced by energetic ion bombardment, or "ion milling," of the tr…
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Electric-field noise from ion-trap electrode surfaces can limit the fidelity of multiqubit entangling operations in trapped-ion quantum information processors and can give rise to systematic errors in trapped-ion optical clocks. The underlying mechanism for this noise is unknown, but it has been shown that the noise amplitude can be reduced by energetic ion bombardment, or "ion milling," of the trap electrode surfaces. Using a single trapped $^{88}$Sr$^{+}$ ion as a sensor, we investigate the temperature dependence of this noise both before and after ex situ ion milling of the trap electrodes. Making measurements over a trap electrode temperature range of 4 K to 295 K in both sputtered niobium and electroplated gold traps, we see a marked change in the temperature scaling of the electric-field noise after ion milling: power-law behavior in untreated surfaces is transformed to Arrhenius behavior after treatment. The temperature scaling becomes material-dependent after treatment as well, strongly suggesting that different noise mechanisms are at work before and after ion milling. To constrain potential noise mechanisms, we measure the frequency dependence of the electric-field noise, as well as its dependence on ion-electrode distance, for niobium traps at room temperature both before and after ion milling. These scalings are unchanged by ion milling.
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Submitted 10 January, 2019; v1 submitted 20 September, 2018;
originally announced September 2018.
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Method for Determination of Technical Noise Contributions to Ion Motional Heating
Authors:
J. A. Sedlacek,
J. Stuart,
W. Loh,
R. McConnell,
C. D. Bruzewicz,
J. M. Sage,
J. Chiaverini
Abstract:
Microfabricated Paul ion traps show tremendous promise for large-scale quantum information processing. However, motional heating of ions can have a detrimental effect on the fidelity of quantum logic operations in miniaturized, scalable designs. In many experiments, contributions to ion heating due to technical voltage noise present on the static (DC) and radio frequency (RF) electrodes can be ove…
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Microfabricated Paul ion traps show tremendous promise for large-scale quantum information processing. However, motional heating of ions can have a detrimental effect on the fidelity of quantum logic operations in miniaturized, scalable designs. In many experiments, contributions to ion heating due to technical voltage noise present on the static (DC) and radio frequency (RF) electrodes can be overlooked. We present a reliable method for determining the extent to which motional heating is dominated by residual voltage noise on the DC or RF electrodes. Also, we demonstrate that stray DC electric fields can shift the ion position such that technical noise on the RF electrode can significantly contribute to the motional heating rate. After minimizing the pseudopotential gradient experienced by the ion induced by stray DC electric fields, the motional heating due to RF technical noise can be significantly reduced.
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Submitted 23 May, 2018;
originally announced May 2018.
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Distance scaling of electric-field noise in a surface-electrode ion trap
Authors:
J. A. Sedlacek,
A. Greene,
J. Stuart,
R. McConnell,
C. D. Bruzewicz,
J. M. Sage,
J. Chiaverini
Abstract:
We investigate anomalous ion-motional heating, a limitation to multi-qubit quantum-logic gate fidelity in trapped-ion systems, as a function of ion-electrode separation. Using a multi-zone surface-electrode trap in which ions can be held at five discrete distances from the metal electrodes, we measure power-law dependencies of the electric-field noise experienced by the ion on the ion-electrode di…
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We investigate anomalous ion-motional heating, a limitation to multi-qubit quantum-logic gate fidelity in trapped-ion systems, as a function of ion-electrode separation. Using a multi-zone surface-electrode trap in which ions can be held at five discrete distances from the metal electrodes, we measure power-law dependencies of the electric-field noise experienced by the ion on the ion-electrode distance $d$. We find a scaling of approximately $d^{-4}$ regardless of whether the electrodes are at room temperature or cryogenic temperature, despite the fact that the heating rates are approximately two orders of magnitude smaller in the latter case. Through auxiliary measurements using application of noise to the electrodes, we rule out technical limitations to the measured heating rates and scalings. We also measure frequency scaling of the inherent electric-field noise close to $1/f$ at both temperatures. These measurements eliminate from consideration anomalous-heating models which do not have a $d^{-4}$ distance dependence, including several microscopic models of current interest.
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Submitted 30 November, 2017;
originally announced December 2017.
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Heisenberg scaling of imaging resolution by coherent enhancement
Authors:
Robert McConnell,
Guang Hao Low,
Theodore J. Yoder,
Colin D. Bruzewicz,
Isaac L. Chuang,
John Chiaverini,
Jeremy M. Sage
Abstract:
Classical imaging works by scattering photons from an object to be imaged, and achieves resolution scaling as $1/\sqrt{t}$, with $t$ the imaging time. By contrast, the laws of quantum mechanics allow one to utilize quantum coherence to obtain imaging resolution that can scale as quickly as $1/t$ -- the so-called "Heisenberg limit." However, ambiguities in the obtained signal often preclude taking…
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Classical imaging works by scattering photons from an object to be imaged, and achieves resolution scaling as $1/\sqrt{t}$, with $t$ the imaging time. By contrast, the laws of quantum mechanics allow one to utilize quantum coherence to obtain imaging resolution that can scale as quickly as $1/t$ -- the so-called "Heisenberg limit." However, ambiguities in the obtained signal often preclude taking full advantage of this quantum enhancement, while imaging techniques designed to be unambiguous often lose this optimal Heisenberg scaling. Here, we demonstrate an imaging technique which combines unambiguous detection of the target with Heisenberg scaling of the resolution. We also demonstrate a binary search algorithm which can efficiently locate a coherent target using the technique, resolving a target trapped ion to within 0.3% of the $1/e^2$ diameter of the excitation beam.
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Submitted 13 November, 2017; v1 submitted 7 June, 2016;
originally announced June 2016.
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Scalable Loading of a Two-Dimensional Trapped-Ion Array
Authors:
C. D. Bruzewicz,
R. McConnell,
J. Chiaverini,
J. M. Sage
Abstract:
We describe rapid, random-access loading of a two-dimensional (2D) surface-electrode ion-trap array based on two crossed photo-ionization laser beams. With the use of a continuous flux of pre-cooled neutral atoms from a remotely-located source, we achieve loading of a single ion per site while maintaining long trap lifetimes and without disturbing the coherence of an ion quantum bit in an adjacent…
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We describe rapid, random-access loading of a two-dimensional (2D) surface-electrode ion-trap array based on two crossed photo-ionization laser beams. With the use of a continuous flux of pre-cooled neutral atoms from a remotely-located source, we achieve loading of a single ion per site while maintaining long trap lifetimes and without disturbing the coherence of an ion quantum bit in an adjacent site. This demonstration satisfies all major criteria necessary for loading and reloading extensive 2D arrays, as will be required for large-scale quantum information processing. Moreover, the already high loading rate can be increased by loading ions in parallel with only a concomitant increase in photo-ionization laser power and no need for additional atomic flux.
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Submitted 10 November, 2015;
originally announced November 2015.
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Integrated optical addressing of an ion qubit
Authors:
Karan K. Mehta,
Colin D. Bruzewicz,
Robert McConnell,
Rajeev J. Ram,
Jeremy M. Sage,
John Chiaverini
Abstract:
The long coherence times and strong Coulomb interactions afforded by trapped ion qubits have enabled realizations of the necessary primitives for quantum information processing (QIP), and indeed the highest-fidelity quantum operations in any qubit to date. But while light delivery to each individual ion in a system is essential for general quantum manipulations and readout, experiments so far have…
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The long coherence times and strong Coulomb interactions afforded by trapped ion qubits have enabled realizations of the necessary primitives for quantum information processing (QIP), and indeed the highest-fidelity quantum operations in any qubit to date. But while light delivery to each individual ion in a system is essential for general quantum manipulations and readout, experiments so far have employed optical systems cumbersome to scale to even a few tens of qubits. Here we demonstrate lithographically defined nanophotonic waveguide devices for light routing and ion addressing fully integrated within a surface-electrode ion trap chip. Ion qubits are addressed at multiple locations via focusing grating couplers emitting through openings in the trap electrodes to ions trapped 50 $μ$m above the chip; using this light we perform quantum coherent operations on the optical qubit transition in individual $^{88}$Sr$^+$ ions. The grating focuses the beam to a diffraction-limited spot near the ion position with a 2 $μ$m 1/$e^2$-radius along the trap axis, and we measure crosstalk errors between $10^{-2}$ and $4\times10^{-4}$ at distances 7.5-15 $μ$m from the beam center. Owing to the scalability of the planar fabrication employed, together with the tight focusing and stable alignment afforded by optics integration within the trap chip, this approach presents a path to creating the optical systems required for large-scale trapped-ion QIP.
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Submitted 23 July, 2016; v1 submitted 19 October, 2015;
originally announced October 2015.
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Measurement of Ion Motional Heating Rates over a Range of Trap Frequencies and Temperatures
Authors:
C. D. Bruzewicz,
J. M. Sage,
J. Chiaverini
Abstract:
We present measurements of the motional heating rate of a trapped ion at different trap frequencies and temperatures between $\sim$0.6 and 1.5 MHz and $\sim$4 and 295 K. Additionally, we examine the possible effect of adsorbed surface contaminants with boiling points below $\sim$105$^{\circ}$C by measuring the ion heating rate before and after locally baking our ion trap chip under ultrahigh vacuu…
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We present measurements of the motional heating rate of a trapped ion at different trap frequencies and temperatures between $\sim$0.6 and 1.5 MHz and $\sim$4 and 295 K. Additionally, we examine the possible effect of adsorbed surface contaminants with boiling points below $\sim$105$^{\circ}$C by measuring the ion heating rate before and after locally baking our ion trap chip under ultrahigh vacuum conditions. We compare the heating rates presented here to those calculated from available electric-field noise models. We can tightly constrain a subset of these models based on their expected frequency and temperature scaling interdependence. Discrepancies between the measured results and predicted values point to the need for refinement of theoretical noise models in order to more fully understand the mechanisms behind motional trapped-ion heating.
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Submitted 16 December, 2014;
originally announced December 2014.
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Ion traps fabricated in a CMOS foundry
Authors:
K. K. Mehta,
A. M. Eltony,
C. D. Bruzewicz,
I. L. Chuang,
R. J. Ram,
J. M. Sage,
J. Chiaverini
Abstract:
We demonstrate trap** in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With…
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We demonstrate trap** in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trap** is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This is the first demonstration of scalable quantum computing hardware, in any modality, utilizing a commercial CMOS process, and it opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.
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Submitted 13 June, 2014;
originally announced June 2014.
