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Probing single electrons across 300 mm spin qubit wafers
Authors:
Samuel Neyens,
Otto K. Zietz,
Thomas F. Watson,
Florian Luthi,
Aditi Nethwewala,
Hubert C. George,
Eric Henry,
Mohammad Islam,
Andrew J. Wagner,
Felix Borjans,
Elliot J. Connors,
J. Corrigan,
Matthew J. Curry,
Daniel Keith,
Roza Kotlyar,
Lester F. Lampert,
Mateusz T. Madzik,
Kent Millard,
Fahd A. Mohiyaddin,
Stefano Pellerano,
Ravi Pillarisetty,
Mick Ramsey,
Rostyslav Savytskyy,
Simon Schaal,
Guoji Zheng
, et al. (5 additional authors not shown)
Abstract:
Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient dev…
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Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient device screening and to improve statistical metrics like qubit yield and voltage variation. Spin qubits based on electrons in Si have shown impressive control fidelities but have historically been challenged by yield and process variation. Here we present a testing process using a cryogenic 300 mm wafer prober to collect high-volume data on the performance of hundreds of industry-manufactured spin qubit devices at 1.6 K. This testing method provides fast feedback to enable optimization of the CMOS-compatible fabrication process, leading to high yield and low process variation. Using this system, we automate measurements of the operating point of spin qubits and probe the transitions of single electrons across full wafers. We analyze the random variation in single-electron operating voltages and find that the optimized fabrication process leads to low levels of disorder at the 300 mm scale. Together these results demonstrate the advances that can be achieved through the application of CMOS industry techniques to the fabrication and measurement of spin qubit devices.
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Submitted 3 May, 2024; v1 submitted 10 July, 2023;
originally announced July 2023.
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Automated extraction of capacitive coupling for quantum dot systems
Authors:
Joshua Ziegler,
Florian Luthi,
Mick Ramsey,
Felix Borjans,
Guoji Zheng,
Justyna P. Zwolak
Abstract:
Gate-defined quantum dots (QDs) have appealing attributes as a quantum computing platform. However, near-term devices possess a range of possible imperfections that need to be accounted for during the tuning and operation of QD devices. One such problem is the capacitive cross-talk between the metallic gates that define and control QD qubits. A way to compensate for the capacitive cross-talk and e…
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Gate-defined quantum dots (QDs) have appealing attributes as a quantum computing platform. However, near-term devices possess a range of possible imperfections that need to be accounted for during the tuning and operation of QD devices. One such problem is the capacitive cross-talk between the metallic gates that define and control QD qubits. A way to compensate for the capacitive cross-talk and enable targeted control of specific QDs independent of coupling is by the use of virtual gates. Here, we demonstrate a reliable automated capacitive coupling identification method that combines machine learning with traditional fitting to take advantage of the desirable properties of each. We also show how the cross-capacitance measurement may be used for the identification of spurious QDs sometimes formed during tuning experimental devices. Our systems can autonomously flag devices with spurious dots near the operating regime, which is crucial information for reliable tuning to a regime suitable for qubit operations.
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Submitted 25 May, 2023; v1 submitted 20 January, 2023;
originally announced January 2023.
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Tuning arrays with rays: Physics-informed tuning of quantum dot charge states
Authors:
Joshua Ziegler,
Florian Luthi,
Mick Ramsey,
Felix Borjans,
Guoji Zheng,
Justyna P. Zwolak
Abstract:
Quantum computers based on gate-defined quantum dots (QDs) are expected to scale. However, as the number of qubits increases, the burden of manually calibrating these systems becomes unreasonable and autonomous tuning must be used. There has been a range of recent demonstrations of automated tuning of various QD parameters such as coarse gate ranges, global state topology (e.g. single QD, double Q…
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Quantum computers based on gate-defined quantum dots (QDs) are expected to scale. However, as the number of qubits increases, the burden of manually calibrating these systems becomes unreasonable and autonomous tuning must be used. There has been a range of recent demonstrations of automated tuning of various QD parameters such as coarse gate ranges, global state topology (e.g. single QD, double QD), charge, and tunnel coupling with a variety of methods. Here, we demonstrate an intuitive, reliable, and data-efficient set of tools for an automated global state and charge tuning in a framework deemed physics-informed tuning (PIT). The first module of PIT is an action-based algorithm that combines a machine learning classifier with physics knowledge to navigate to a target global state. The second module uses a series of one-dimensional measurements to tune to a target charge state by first emptying the QDs of charge, followed by calibrating capacitive couplings and navigating to the target charge state. The success rate for the action-based tuning consistently surpasses 95 % on both simulated and experimental data suitable for off-line testing. The success rate for charge setting is comparable when testing with simulated data, at 95.5(5.4) %, and only slightly worse for off-line experimental tests, with an average of 89.7(17.4) % (median 97.5 %). It is noteworthy that the high performance is demonstrated both on data from samples fabricated in an academic cleanroom as well as on an industrial 300 mm} process line, further underlining the device agnosticism of PIT. Together, these tests on a range of simulated and experimental devices demonstrate the effectiveness and robustness of PIT.
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Submitted 28 September, 2023; v1 submitted 8 September, 2022;
originally announced September 2022.
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A Scalable Microarchitecture for Efficient Instruction-Driven Signal Synthesis and Coherent Qubit Control
Authors:
Nader Khammassi,
Randy W. Morris,
Shavindra Premaratne,
Florian Luthi,
Felix Borjans,
Satoshi Suzuki,
Robert Flory,
Linda Patricia Osuna Ibarra,
Lester Lampert,
Anne Y. Matsuura
Abstract:
Execution of quantum algorithms requires a quantum computer architecture with a dedicated quantum instruction set that is capable of supporting translation of workloads into actual quantum operations acting on the qubits. State-of-the-art qubit control setups typically utilize general purpose test instruments such as arbitrary waveform generators (AWGs) to generate a limited set of waveforms or pu…
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Execution of quantum algorithms requires a quantum computer architecture with a dedicated quantum instruction set that is capable of supporting translation of workloads into actual quantum operations acting on the qubits. State-of-the-art qubit control setups typically utilize general purpose test instruments such as arbitrary waveform generators (AWGs) to generate a limited set of waveforms or pulses. These waveforms are precomputed and stored prior to execution, and then used to produce control pulses during execution. Besides their prohibitive cost and limited scalability, such instruments suffer from poor programmability due to the absence of an instruction set architecture (ISA). Limited memory for pulse storage ultimately determines the total number of supported quantum operations. In this work, we present a scalable qubit control system that enables efficient qubit control using a flexible ISA to drive a direct digital synthesis (DDS) pipeline producing nanosecond-accurate qubit control signals dynamically. The designed qubit controller provides a higher density of control channels, a scalable design, better programmability, and lower cost compared to state-of-the-art systems. In this work, we discuss the new qubit controller's capabilities, its architecture and instruction set, and present experimental results for coherent qubit control.
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Submitted 13 May, 2022;
originally announced May 2022.
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Spin digitizer for high-fidelity readout of a cavity-coupled silicon triple quantum dot
Authors:
F. Borjans,
X. Mi,
J. R. Petta
Abstract:
An important requirement for spin-based quantum information processing is reliable and fast readout of electron spin states, allowing for feedback and error correction. However, common readout techniques often require additional gate structures hindering device scaling or impose stringent constraints on the tuning configuration of the sensed quantum dots. Here, we operate an in-line charge sensor…
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An important requirement for spin-based quantum information processing is reliable and fast readout of electron spin states, allowing for feedback and error correction. However, common readout techniques often require additional gate structures hindering device scaling or impose stringent constraints on the tuning configuration of the sensed quantum dots. Here, we operate an in-line charge sensor within a triple quantum dot, where one of the dots is coupled to a microwave cavity and used to readout the charge states of the other two dots. Owing to the proximity of the charge sensor, we observe a near-digital sensor response with a power signal-to-noise ratio >450 at an integration time of $t_{\rm int}$ = 1 $μ$s. Despite small singlet-triplet splittings $\approx$40 $μ$eV, we further utilize the sensor to measure the spin relaxation time of a singlet-triplet qubit, achieving an average single-shot spin readout fidelity >99%. Our approach enables high-fidelity spin readout, combining minimal device overhead with flexible qubit operation in semiconductor quantum devices.
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Submitted 8 April, 2021;
originally announced April 2021.
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Probing the Spatial Variation of the Inter-Valley Tunnel Coupling in a Silicon Triple Quantum Dot
Authors:
F. Borjans,
X. Zhang,
X. Mi,
G. Cheng,
N. Yao,
C. A. C. Jackson,
L. F. Edge,
J. R. Petta
Abstract:
Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can be lifted in silicon quantum wells due to strain and electronic confinement, but the "valley splitting" of the two lowest lying valleys is known to be sensitive…
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Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can be lifted in silicon quantum wells due to strain and electronic confinement, but the "valley splitting" of the two lowest lying valleys is known to be sensitive to atomic-scale disorder. Large valley splittings are desirable to have a well-defined spin qubit. In addition, an understanding of the inter-valley tunnel coupling that couples different valleys in adjacent quantum dots is extremely important, as the resulting gaps in the energy level diagram may affect the fidelity of charge and spin transfer protocols in silicon quantum dot arrays. Here we use microwave spectroscopy to probe spatial variations in the valley splitting, and the intra- and inter-valley tunnel couplings ($t_{ij}$ and $t'_{ij}$) that couple dots $i$ and $j$ in a triple quantum dot (TQD). We uncover large spatial variations in the ratio of inter-valley to intra-valley tunnel couplings $t_{12}'/t_{12}=0.90$ and $t_{23}'/t_{23}=0.56$. By tuning the interdot tunnel barrier we also show that $t'_{ij}$ scales linearly with $t_{ij}$, as expected from theory. The results indicate strong interactions between different valley states on neighboring dots, which we attribute to local inhomogeneities in the silicon quantum well.
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Submitted 29 January, 2021;
originally announced January 2021.
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Split-Gate Cavity Coupler for Silicon Circuit Quantum Electrodynamics
Authors:
F. Borjans,
X. Croot,
S. Putz,
X. Mi,
S. M. Quinn,
A. Pan,
J. Kerckhoff,
E. J. Pritchett,
C. A. Jackson,
L. F. Edge,
R. S. Ross,
T. D. Ladd,
M. G. Borselli,
M. F. Gyure,
J. R. Petta
Abstract:
Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave cavity. Measurements of the cavity transmission as a function of level detuning yield a charge cavity coupling rate $g_c/2π$ = 58 MHz, charge decoherence rate…
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Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave cavity. Measurements of the cavity transmission as a function of level detuning yield a charge cavity coupling rate $g_c/2π$ = 58 MHz, charge decoherence rate $γ_c/2π$ = 36 MHz, and cavity decay rate $κ/2π$ = 1.2 MHz. The charge cavity coupling rate is in good agreement with device simulations. Our coupling technique can be extended to enable simultaneous coupling of multiple DQDs to the same cavity mode, opening the door to long-range coupling of semiconductor qubits using microwave frequency photons.
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Submitted 2 March, 2020;
originally announced March 2020.
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Long-Range Microwave Mediated Interactions Between Electron Spins
Authors:
F. Borjans,
X. G. Croot,
X. Mi,
M. J. Gullans,
J. R. Petta
Abstract:
Entangling gates for electron spins in semiconductor quantum dots are generally based on exchange, a short-ranged interaction that requires wavefunction overlap. Coherent spin-photon coupling raises the prospect of using photons as long-distance interconnects for spin qubits. Realizing a key milestone for spin-based quantum information processing, we demonstrate microwave-mediated spin-spin intera…
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Entangling gates for electron spins in semiconductor quantum dots are generally based on exchange, a short-ranged interaction that requires wavefunction overlap. Coherent spin-photon coupling raises the prospect of using photons as long-distance interconnects for spin qubits. Realizing a key milestone for spin-based quantum information processing, we demonstrate microwave-mediated spin-spin interactions between two electrons that are physically separated by more than 4 mm. Coherent spin-photon coupling is demonstrated for each individual spin using microwave transmission spectroscopy. An enhanced vacuum Rabi splitting is observed when both spins are tuned into resonance with the cavity, indicative of a coherent spin-spin interaction. Our results demonstrate that microwave-frequency photons can be used as a resource to generate long-range two-qubit gates between spatially separated spins.
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Submitted 2 May, 2019;
originally announced May 2019.
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Flop**-mode electric dipole spin resonance
Authors:
X. Croot,
X. Mi,
S. Putz,
M. Benito,
F. Borjans,
G. Burkard,
J. R. Petta
Abstract:
Traditional approaches to controlling single spins in quantum dots require the generation of large electromagnetic fields to drive many Rabi oscillations within the spin coherence time. We demonstrate "flop**-mode" electric dipole spin resonance, where an electron is electrically driven in a Si/SiGe double quantum dot in the presence of a large magnetic field gradient. At zero detuning, charge d…
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Traditional approaches to controlling single spins in quantum dots require the generation of large electromagnetic fields to drive many Rabi oscillations within the spin coherence time. We demonstrate "flop**-mode" electric dipole spin resonance, where an electron is electrically driven in a Si/SiGe double quantum dot in the presence of a large magnetic field gradient. At zero detuning, charge delocalization across the double quantum dot enhances coupling to the drive field and enables low power electric dipole spin resonance. Through dispersive measurements of the single electron spin state, we demonstrate a nearly three order of magnitude improvement in driving efficiency using flop**-mode resonance, which should facilitate low power spin control in quantum dot arrays.
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Submitted 1 May, 2019;
originally announced May 2019.
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Single-Spin Relaxation in a Synthetic Spin-Orbit Field
Authors:
F. Borjans,
D. M. Zajac,
T. M. Hazard,
J. R. Petta
Abstract:
Strong magnetic field gradients can produce a synthetic spin-orbit interaction that allows for high fidelity electrical control of single electron spins. We investigate how a field gradient impacts the spin relaxation time T_1 by measuring T_1 as a function of magnetic field B in silicon. The interplay of charge noise, magnetic field gradients, phonons, and conduction band valleys leads to a maxim…
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Strong magnetic field gradients can produce a synthetic spin-orbit interaction that allows for high fidelity electrical control of single electron spins. We investigate how a field gradient impacts the spin relaxation time T_1 by measuring T_1 as a function of magnetic field B in silicon. The interplay of charge noise, magnetic field gradients, phonons, and conduction band valleys leads to a maximum relaxation time of 160 ms at low field, a strong spin-valley relaxation hotspot at intermediate fields, and a B^4 scaling at high fields. T_1 is found to decrease with lattice temperature T_lat as well as with added electrical noise. In comparison, samples without micromagnets have a significantly longer T_1. Optimization of the micromagnet design, combined with reductions in charge noise and electron temperature, may further extend T_1 in devices with large magnetic field gradients.
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Submitted 2 November, 2018;
originally announced November 2018.
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High-fidelity quantum gates in Si/SiGe double quantum dots
Authors:
Maximilian Russ,
D. M. Zajac,
A. J. Sigillito,
F. Borjans,
J. M. Taylor,
J. R. Petta,
Guido Burkard
Abstract:
Motivated by recent experiments of Zajac et al. [arXiv:1708.03530], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient. We use a combination of analytical calculations and numerical simulations to provide the optimal pulse sequences and parameter settings for the gate operation. W…
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Motivated by recent experiments of Zajac et al. [arXiv:1708.03530], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient. We use a combination of analytical calculations and numerical simulations to provide the optimal pulse sequences and parameter settings for the gate operation. We present a novel synchronization method which avoids detrimental spin flips during the gate operation and provide details about phase mismatches accumulated during the two-qubit gates which occur due to residual exchange interaction, non-adiabatic pulses, and off-resonant driving. By adjusting the gate times, synchronizing the resonant and off-resonant transitions, and compensating these phase mismatches by phase control, the overall gate fidelity can be increased significantly.
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Submitted 2 November, 2017;
originally announced November 2017.
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Quantum CNOT Gate for Spins in Silicon
Authors:
D. M. Zajac,
A. J. Sigillito,
M. Russ,
F. Borjans,
J. M. Taylor,
G. Burkard,
J. R. Petta
Abstract:
Single qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. While high fidelity single qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been a major challenge due to rapid nuclear spin dephasing and charge noise. We demonstrate an efficient resonantly-driven CNOT gate for electron spins…
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Single qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. While high fidelity single qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been a major challenge due to rapid nuclear spin dephasing and charge noise. We demonstrate an efficient resonantly-driven CNOT gate for electron spins in silicon. Our platform achieves single-qubit rotations with fidelities >99%, as verified by randomized benchmarking. Gate control of the exchange coupling allows a quantum CNOT gate to be implemented with resonant driving in ~200 ns. We use the CNOT gate to generate a Bell state with 75% fidelity, limited by quantum state readout. Our quantum dot device architecture opens the door to multi-qubit algorithms in silicon.
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Submitted 11 August, 2017;
originally announced August 2017.
