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Probing single electrons across 300 mm spin qubit wafers
Authors:
Samuel Neyens,
Otto K. Zietz,
Thomas F. Watson,
Florian Luthi,
Aditi Nethwewala,
Hubert C. George,
Eric Henry,
Mohammad Islam,
Andrew J. Wagner,
Felix Borjans,
Elliot J. Connors,
J. Corrigan,
Matthew J. Curry,
Daniel Keith,
Roza Kotlyar,
Lester F. Lampert,
Mateusz T. Madzik,
Kent Millard,
Fahd A. Mohiyaddin,
Stefano Pellerano,
Ravi Pillarisetty,
Mick Ramsey,
Rostyslav Savytskyy,
Simon Schaal,
Guoji Zheng
, et al. (5 additional authors not shown)
Abstract:
Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient dev…
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Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient device screening and to improve statistical metrics like qubit yield and voltage variation. Spin qubits based on electrons in Si have shown impressive control fidelities but have historically been challenged by yield and process variation. Here we present a testing process using a cryogenic 300 mm wafer prober to collect high-volume data on the performance of hundreds of industry-manufactured spin qubit devices at 1.6 K. This testing method provides fast feedback to enable optimization of the CMOS-compatible fabrication process, leading to high yield and low process variation. Using this system, we automate measurements of the operating point of spin qubits and probe the transitions of single electrons across full wafers. We analyze the random variation in single-electron operating voltages and find that the optimized fabrication process leads to low levels of disorder at the 300 mm scale. Together these results demonstrate the advances that can be achieved through the application of CMOS industry techniques to the fabrication and measurement of spin qubit devices.
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Submitted 3 May, 2024; v1 submitted 10 July, 2023;
originally announced July 2023.
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Efficient self-consistent quantum transport simulator for quantum devices
Authors:
Xujiao Gao,
Denis Mamaluy,
Erik Nielsen,
Ralph W. Young,
Amir Shirkhorshidian,
Michael P. Lilly,
Nathan C. Bishop,
Malcolm S. Carroll,
Richard P. Muller
Abstract:
We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulation of 1D quantum devices. Applying the general CBR approach to 1D open systems results in a set of very simple equations that are derived and given in detail for the first time. The charge self-consistency of the coupled…
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We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulation of 1D quantum devices. Applying the general CBR approach to 1D open systems results in a set of very simple equations that are derived and given in detail for the first time. The charge self-consistency of the coupled CBR-Poisson equations is achieved by using the predictor-corrector iteration scheme with the optional Anderson acceleration. In addition, we introduce a new way to convert an equilibrium electrostatic barrier potential calculated from an external simulator to an effective do** profile, which is then used by the CBR-Poisson code for transport simulation of the barrier under non-zero biases. The code has been applied to simulate the quantum transport in a double barrier structure and across a tunnel barrier in a silicon double quantum dot. Extremely fast self-consistent 1D simulations of the differential conductance across a tunnel barrier in the quantum dot show better qualitative agreement with experiment than non-self-consistent simulations.
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Submitted 28 March, 2014;
originally announced March 2014.
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QCAD Simulation and Optimization of Semiconductor Quantum Dots
Authors:
Xujiao Gao,
Erik Nielsen,
Richard P. Muller,
Ralph W. Young,
Andrew G. Salinger,
Nathan C. Bishop,
Michael P. Lilly,
Malcolm S. Carroll
Abstract:
We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed for quantum bits (qubits). This finite-element simulator has three differentiating features: (i) its core contains nonlinear Poisson, effective mass Schrodinger, and Configuration Interaction solvers that have massively paral…
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We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed for quantum bits (qubits). This finite-element simulator has three differentiating features: (i) its core contains nonlinear Poisson, effective mass Schrodinger, and Configuration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; and (iii) it interfaces directly with the full-featured optimization engine Dakota. In this work, we describe the capabilities and implementation of the QCAD simulation tool, and show how it can be used to both analyze existing experimental QD devices through capacitance calculations, and aid in the design of few-electron multi-QDs. In particular, we observe that computed capacitances are in rough agreement with experiment, and that quantum confinement increases capacitance when the number of electrons is fixed in a quantum dot. Coupling of QCAD with the optimizer Dakota allows for rapid identification and improvement of device layouts that are likely to exhibit few-electron quantum dot characteristics.
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Submitted 28 March, 2014;
originally announced March 2014.
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Spontaneous emission in a silicon charge qubit
Authors:
Khoi T. Nguyen,
N. Tobias Jacobson,
Michael P. Lilly,
Nathaniel C. Bishop,
Erik Nielsen,
Joel R. Wendt,
J. Dominguez,
T. Pluym,
Malcolm S. Carroll
Abstract:
The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double quantum dot (DQD) charge qubit through sensing the charge state's response to non-adiabatic driving of its excited state population. The charge distribution is sens…
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The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double quantum dot (DQD) charge qubit through sensing the charge state's response to non-adiabatic driving of its excited state population. The charge distribution is sensed remotely in the weak measurement regime. We extract emission rates down to kHz frequencies by measuring the variation of the non-equilibrium charge occupancy as a function of amplitude and dwell times between non-adiabatic pulses. Our measurement of the energy-dependent relaxation rate provides a fingerprint of the relaxation mechanism, indicating that relaxation rates for this Si MOS DQD are consistent with coupling to deformation acoustic phonons.
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Submitted 14 March, 2014;
originally announced March 2014.
