-
Optical and spin properties of nitrogen vacancy centers formed along the tracks of high energy heavy ions
Authors:
Wei Liu,
Aleksi A. M. Leino,
Arun Persaud,
Qing Ji,
Kaushalya Jhuria,
Edward S. Barnard,
Shaul Aloni,
Christina Trautmann,
Marilena Tomut,
Ralf Wunderlich,
Hunter Ocker,
Nishanth Anand,
Zhao Hao,
Flyura Djurabekova,
Thomas Schenkel
Abstract:
Exposure of nitrogen doped diamond to high energy, heavy ions induces formation of vacancy related color centers aligned along the trajectories of the ions. Quasi 1D chains of coupled NV centers with lengths of a few tens of microns can be building blocks for quantum information processing and they provide insights into harsh radiation-matter interactions. Here, we report on color center formation…
▽ More
Exposure of nitrogen doped diamond to high energy, heavy ions induces formation of vacancy related color centers aligned along the trajectories of the ions. Quasi 1D chains of coupled NV centers with lengths of a few tens of microns can be building blocks for quantum information processing and they provide insights into harsh radiation-matter interactions. Here, we report on color center formation in diamond (1 ppm nitrogen) with 1 GeV gold and uranium ions. Using depth-resolved photoluminescence, we observe direct formation of single vacancy related color centers (GR1 centers) along the ion tracks. Mobile vacancies can form NV-centers with native nitrogen atoms during thermal annealing. Molecular dynamics simulations indicate that both isolated vacancies and defect clusters form along ion trajectory through electronic stop** processes, leading to broad color center profiles that range from the sample surface to a depth of about 25 microns. We quantify the spin properties of NV-centers formed by swift heavy ions through optical detection of magnetic resonance (ODMR) and validate the feasibility of using swift-heavy-ion-generated NV$^{-}$ along quasi 1D chains (for isolated tracks from low fluence irradiations) or in thin sheets of coupled 1D spin chains (formed with higher ion fluences) for NV-based magnetometry and for the exploration of quasi 1D and 2D spin textures in diamond.
△ Less
Submitted 6 March, 2024;
originally announced March 2024.
-
A substitutional quantum defect in WS$_2$ discovered by high-throughput computational screening and fabricated by site-selective STM manipulation
Authors:
John C. Thomas,
Wei Chen,
Yihuang Xiong,
Bradford A. Barker,
Junze Zhou,
Weiru Chen,
Antonio Rossi,
Nolan Kelly,
Zhuohang Yu,
Da Zhou,
Shalini Kumari,
Edward S. Barnard,
Joshua A. Robinson,
Mauricio Terrones,
Adam Schwartzberg,
D. Frank Ogletree,
Eli Rotenberg,
Marcus M. Noack,
Sinéad Griffin,
Archana Raja,
David A. Strubbe,
Gian-Marco Rignanese,
Alexander Weber-Bargioni,
Geoffroy Hautier
Abstract:
Point defects in two-dimensional materials are of key interest for quantum information science. However, the space of possible defects is immense, making the identification of high-performance quantum defects extremely challenging. Here, we perform high-throughput (HT) first-principles computational screening to search for promising quantum defects within WS$_2$, which present localized levels in…
▽ More
Point defects in two-dimensional materials are of key interest for quantum information science. However, the space of possible defects is immense, making the identification of high-performance quantum defects extremely challenging. Here, we perform high-throughput (HT) first-principles computational screening to search for promising quantum defects within WS$_2$, which present localized levels in the band gap that can lead to bright optical transitions in the visible or telecom regime. Our computed database spans more than 700 charged defects formed through substitution on the tungsten or sulfur site. We found that sulfur substitutions enable the most promising quantum defects. We computationally identify the neutral cobalt substitution to sulfur (Co$_{\rm S}^{0}$) as very promising and fabricate it with scanning tunneling microscopy (STM). The Co$_{\rm S}^{0}$ electronic structure measured by STM agrees with first principles and showcases an attractive new quantum defect. Our work shows how HT computational screening and novel defect synthesis routes can be combined to design new quantum defects.
△ Less
Submitted 14 September, 2023;
originally announced September 2023.
-
Effects of Laser-Annealing on Fixed-Frequency Superconducting Qubits
Authors:
Hyunseong Kim,
Christian Jünger,
Alexis Morvan,
Edward S. Barnard,
William P. Livingston,
M. Virginia P. Altoé,
Yosep Kim,
Chengyu Song,
Larry Chen,
John Mark Kreikebaum,
D. Frank Ogletree,
David I. Santiago,
Irfan Siddiqi
Abstract:
As superconducting quantum processors increase in complexity, techniques to overcome constraints on frequency crowding are needed. The recently developed method of laser-annealing provides an effective post-fabrication method to adjust the frequency of superconducting qubits. Here, we present an automated laser-annealing apparatus based on conventional microscopy components and demonstrate preserv…
▽ More
As superconducting quantum processors increase in complexity, techniques to overcome constraints on frequency crowding are needed. The recently developed method of laser-annealing provides an effective post-fabrication method to adjust the frequency of superconducting qubits. Here, we present an automated laser-annealing apparatus based on conventional microscopy components and demonstrate preservation of highly coherent transmons. In one case, we observe a two-fold increase in coherence after laser-annealing and perform noise spectroscopy on this qubit to investigate the change in defect features, in particular two-level system defects. Finally, we present a local heating model as well as demonstrate aging stability for laser-annealing on the wafer scale. Our work constitutes an important first step towards both understanding the underlying physical mechanism and scaling up laser-annealing of superconducting qubits.
△ Less
Submitted 7 June, 2022;
originally announced June 2022.
-
Direct formation of nitrogen-vacancy centers in nitrogen doped diamond along the trajectories of swift heavy ions
Authors:
Russell E. Lake,
Arun Persaud,
Casey Christian,
Edward S. Barnard,
Emory M. Chan,
Andrew A. Bettiol,
Marilena Tomut,
Christina Trautmann,
Thomas Schenkel
Abstract:
We report depth-resolved photoluminescence measurements of nitrogen-vacancy (NV$^-$) centers formed along the tracks of swift heavy ions (SHIs) in type Ib synthetic single crystal diamonds that had been doped with 100 ppm nitrogen during crystal growth. Analysis of the spectra shows that NV$^-$ centers are formed preferentially within regions where electronic stop** processes dominate and not at…
▽ More
We report depth-resolved photoluminescence measurements of nitrogen-vacancy (NV$^-$) centers formed along the tracks of swift heavy ions (SHIs) in type Ib synthetic single crystal diamonds that had been doped with 100 ppm nitrogen during crystal growth. Analysis of the spectra shows that NV$^-$ centers are formed preferentially within regions where electronic stop** processes dominate and not at the end of the ion range where elastic collisions lead to formation of vacancies and defects. Thermal annealing further increases NV yields after irradiation with SHIs preferentially in regions with high vacancy densities. NV centers formed along the tracks of single swift heavy ions can be isolated with lift-out techniques for explorations of color center qubits in quasi-1D registers with an average qubit spacing of a few nanometers and of order 100 color centers per micrometer along 10 to 30 micrometer long percolation chains.
△ Less
Submitted 1 March, 2021; v1 submitted 6 November, 2020;
originally announced November 2020.
