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A simple mathematical theory for Simple Volatile Memristors and their spiking circuits
Authors:
T. M. Kamsma,
R. van Roij,
C. Spitoni
Abstract:
In pursuit of neuromorphic (brain-inspired) devices, memristors (memory-resistors) have emerged as promising candidates for emulating neuronal circuitry. Here we mathematically define a class of Simple Volatile Memristors (SVMs), which notably includes various fluidic iontronic devices that have recently garnered significant interest due to their unique quality of operating within the same medium…
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In pursuit of neuromorphic (brain-inspired) devices, memristors (memory-resistors) have emerged as promising candidates for emulating neuronal circuitry. Here we mathematically define a class of Simple Volatile Memristors (SVMs), which notably includes various fluidic iontronic devices that have recently garnered significant interest due to their unique quality of operating within the same medium as the brain. We show that symmetric SVMs produce non self-crossing current-voltage hysteresis loops, while simple asymmetric SVMs produce self-crossing loops. Additionally, we derive a general expression for the enclosed area in a loop, providing a relation between the voltage frequency and the SVM memory timescale. These general results are shown to materialise in physical finite-element calculations of microfluidic memristors. An SVM-based circuit has been proposed that exhibits all-or-none and tonic neuronal spiking. We generalise and analyse this spiking circuit, characterising it as a two-dimensional dynamical system. Additionally, we demonstrate that stochastic effects can induce novel neuronal firing modes absent in the deterministic case. Through our analysis, the circuit dynamics are well understood, while retaining its explicit link with the physically plausible underlying system.
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Submitted 26 February, 2024;
originally announced April 2024.
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Brain-inspired computing with fluidic iontronic nanochannels
Authors:
T. M. Kamsma,
J. Kim,
K. Kim,
W. Q. Boon,
C. Spitoni,
J. Park,
R. van Roij
Abstract:
The brain's remarkable and efficient information processing capability is driving research into brain-inspired (neuromorphic) computing paradigms. Artificial aqueous ion channels are emerging as an exciting platform for neuromorphic computing, representing a departure from conventional solid-state devices by directly mimicking the brain's fluidic ion transport. Supported by a quantitative theoreti…
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The brain's remarkable and efficient information processing capability is driving research into brain-inspired (neuromorphic) computing paradigms. Artificial aqueous ion channels are emerging as an exciting platform for neuromorphic computing, representing a departure from conventional solid-state devices by directly mimicking the brain's fluidic ion transport. Supported by a quantitative theoretical model, we present easy to fabricate tapered microchannels that embed a conducting network of fluidic nanochannels between a colloidal structure. Due to transient salt concentration polarisation our devices are volatile memristors (memory resistors) that are remarkably stable. The voltage-driven net salt flux and accumulation, that underpin the concentration polarisation, surprisingly combine into a diffusionlike quadratic dependence of the memory retention time on the channel length, allowing channel design for a specific timescale. We implement our device as a synaptic element for neuromorphic reservoir computing. Individual channels distinguish various time series, that together represent (handwritten) numbers, for subsequent in-silico classification with a simple readout function. Our results represent a significant step towards realising the promise of fluidic ion channels as a platform to emulate the rich aqueous dynamics of the brain.
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Submitted 25 April, 2024; v1 submitted 20 September, 2023;
originally announced September 2023.
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Iontronic Neuromorphic Signaling with Conical Microfluidic Memristors
Authors:
T. M. Kamsma,
W. Q. Boon,
T. ter Rele,
C. Spitoni,
R. van Roij
Abstract:
Experiments have shown that the conductance of conical channels, filled with an aqueous electrolyte, can strongly depend on the history of the applied voltage. These channels hence have a memory and are promising elements in brain-inspired (iontronic) circuits. We show here that the memory of such channels stems from transient concentration polarization over the ionic diffusion time. We derive an…
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Experiments have shown that the conductance of conical channels, filled with an aqueous electrolyte, can strongly depend on the history of the applied voltage. These channels hence have a memory and are promising elements in brain-inspired (iontronic) circuits. We show here that the memory of such channels stems from transient concentration polarization over the ionic diffusion time. We derive an analytic approximation for these dynamics which shows good agreement with full finite-element calculations. Using our analytic approximation, we propose an experimentally realisable Hodgkin-Huxley iontronic circuit where micrometer cones take on the role of sodium and potassium channels. Our proposed circuit exhibits key features of neuronal communication such as all-or-none action potentials upon a pulse stimulus and a spike train upon a sustained stimulus.
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Submitted 27 June, 2023; v1 submitted 15 January, 2023;
originally announced January 2023.
