Showing 1–12 of 12 results for author: de Leon, N P

Strong Purcell enhancement of an optical magnetic dipole transition

Authors: Sebastian P. Horvath, Christopher M. Phenicie, Salim Ourari, Mehmet T. Uysal, Songtao Chen, Łukasz Dusanowski, Mouktik Raha, Paul Stevenson, Adam T. Turflinger, Robert J. Cava, Nathalie P. de Leon, Jeff D. Thompson

Abstract: Engineering the local density of states with nanophotonic structures is a powerful tool to control light-matter interactions via the Purcell effect. At optical frequencies, control over the electric field density of states is typically used to couple to and manipulate electric dipole transitions. However, it is also possible to engineer the magnetic density of states to control magnetic dipole tra… ▽ More Engineering the local density of states with nanophotonic structures is a powerful tool to control light-matter interactions via the Purcell effect. At optical frequencies, control over the electric field density of states is typically used to couple to and manipulate electric dipole transitions. However, it is also possible to engineer the magnetic density of states to control magnetic dipole transitions. In this work, we experimentally demonstrate the optical magnetic Purcell effect using a single rare earth ion coupled to a nanophotonic cavity. We engineer a new single photon emitter, Er$^{3+}$ in MgO, where the electric dipole decay rate is strongly suppressed by the cubic site symmetry, giving rise to a nearly pure magnetic dipole optical transition. This allows the unambiguous determination of a magnetic Purcell factor $P_m=1040 \pm 30$. We further extend this technique to realize a magnetic dipole spin-photon interface, performing optical spin initialization and readout of a single Er$^{3+}$ electron spin. This work demonstrates the fundamental equivalence of electric and magnetic density of states engineering, and provides a new tool for controlling light-matter interactions for a broader class of emitters. △ Less

Submitted 6 July, 2023; originally announced July 2023.

Indistinguishable telecom band photons from a single erbium ion in the solid state

Authors: Salim Ourari, Łukasz Dusanowski, Sebastian P. Horvath, Mehmet T. Uysal, Christopher M. Phenicie, Paul Stevenson, Mouktik Raha, Songtao Chen, Robert J. Cava, Nathalie P. de Leon, Jeff D. Thompson

Abstract: Atomic defects in the solid state are a key component of quantum repeater networks for long-distance quantum communication. Recently, there has been significant interest in rare earth ions, in particular Er$^{3+}$ for its telecom-band optical transition, but their application has been hampered by optical spectral diffusion precluding indistinguishable single photon generation. In this work we impl… ▽ More Atomic defects in the solid state are a key component of quantum repeater networks for long-distance quantum communication. Recently, there has been significant interest in rare earth ions, in particular Er$^{3+}$ for its telecom-band optical transition, but their application has been hampered by optical spectral diffusion precluding indistinguishable single photon generation. In this work we implant Er$^{3+}$ into CaWO$_4$, a material that combines a non-polar site symmetry, low decoherence from nuclear spins, and is free of background rare earth ions, to realize significantly reduced optical spectral diffusion. For shallow implanted ions coupled to nanophotonic cavities with large Purcell factor, we observe single-scan optical linewidths of 150 kHz and long-term spectral diffusion of 63 kHz, both close to the Purcell-enhanced radiative linewidth of 21 kHz. This enables the observation of Hong-Ou-Mandel interference between successively emitted photons with high visibility, measured after a 36 km delay line. We also observe spin relaxation times $T_1$ = 3.7 s and $T_2$ > 200 $μ$s, with the latter limited by paramagnetic impurities in the crystal instead of nuclear spins. This represents a significant step towards the construction of telecom-band quantum repeater networks with single Er$^{3+}$ ions. △ Less

Submitted 9 January, 2023; originally announced January 2023.

Journal ref: Nature 620, 977 (2023)

Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer

Authors: Srivatsa Chakravarthi, Nicholas S. Yama, Alex Abulnaga, Ding Huang, Christian Pederson, Karine Hestroffer, Fariba Hatami, Nathalie P. de Leon, Kai-Mei C. Fu

Abstract: Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV)… ▽ More Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stam** process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors ($Q$) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with $Q$ of 4100, we observe a three-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of $C = 2$. These results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal. △ Less

Submitted 13 December, 2022; v1 submitted 9 December, 2022; originally announced December 2022.

Room-temperature photo-chromism of silicon vacancy centers in CVD diamond

Authors: Alexander Wood, Artur Lozovoi, Zi-Huai Zhang, Sachin Sharma, Gabriel I. López-Morales, Harishankar Jayakumar, Nathalie P. de Leon, Carlos A. Meriles

Abstract: The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different photo-luminescence rates. Here, we use confocal fluorescence microscopy to activate and probe charge interconversion between all three charge states un… ▽ More The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different photo-luminescence rates. Here, we use confocal fluorescence microscopy to activate and probe charge interconversion between all three charge states under ambient conditions. In particular, we witness the formation of SiV0 via the two-step capture of diffusing, photo-generated holes, a process we expose both through direct SiV0 fluorescence measurements at low temperatures and confocal microscopy observations in the presence of externally applied electric fields. Further, we show that continuous red illumination induces the converse process, first transforming SiV0 into SiV-, then into SiV2-. Our results shed light on the charge dynamics of SiV and promise opportunities for nanoscale sensing and quantum information processing. △ Less

Submitted 23 November, 2022; originally announced November 2022.

Neutral silicon vacancy centers in undoped diamond via surface control

Authors: Zi-Huai Zhang, Josh A. Zuber, Lila V. H. Rodgers, Xin Gui, Paul Stevenson, Minghao Li, Marietta Batzer, Marcel. li Grimau, Brendan Shields, Andrew M. Edmonds, Nicola Palmer, Matthew L. Markham, Robert J. Cava, Patrick Maletinsky, Nathalie P. de Leon

Abstract: Neutral silicon vacancy centers (SiV0) in diamond are promising candidates for quantum networks because of their long spin coherence times and stable, narrow optical transitions. However, stabilizing SiV0 requires high purity, boron doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage c… ▽ More Neutral silicon vacancy centers (SiV0) in diamond are promising candidates for quantum networks because of their long spin coherence times and stable, narrow optical transitions. However, stabilizing SiV0 requires high purity, boron doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage chemical processing and annealing in a hydrogen environment to realize reversible and highly stable charge state tuning in undoped diamond. The resulting SiV0 centers display optically detected magnetic resonance and bulk-like optical properties. Controlling the charge state tuning via surface termination offers a route for scalable technologies based on SiV0 centers, as well as charge state engineering of other defects. △ Less

Submitted 27 June, 2022; originally announced June 2022.

Biocompatible surface functionalization architecture for a diamond quantum sensor

Authors: Mouzhe Xie, Xiaofei Yu, Lila V. H. Rodgers, Daohong Xu, Ignacio Chi-Duran, Adrien Toros, Niels Quack, Nathalie P. de Leon, Peter C. Maurer

Abstract: Quantum metrology enables some of the most precise measurements. In the life sciences, diamond-based quantum sensing has enabled a new class of biophysical sensors and diagnostic devices that are being investigated as a platform for cancer screening and ultra-sensitive immunoassays. However, a broader application in the life sciences based on nanoscale nuclear magnetic resonance spectroscopy has b… ▽ More Quantum metrology enables some of the most precise measurements. In the life sciences, diamond-based quantum sensing has enabled a new class of biophysical sensors and diagnostic devices that are being investigated as a platform for cancer screening and ultra-sensitive immunoassays. However, a broader application in the life sciences based on nanoscale nuclear magnetic resonance spectroscopy has been hampered by the need to interface highly sensitive quantum bit (qubit) sensors with their biological targets. Here, we demonstrate a new approach that combines quantum engineering with single-molecule biophysics to immobilize individual proteins and DNA molecules on the surface of a bulk diamond crystal that hosts coherent nitrogen vacancy qubit sensors. Our thin (sub-5 nm) functionalization architecture provides precise control over protein adsorption density and results in near-surface qubit coherence approaching 100 μs. The developed architecture remains chemically stable under physiological conditions for over five days, making our technique compatible with most biophysical and biomedical applications. △ Less

Submitted 10 August, 2021; originally announced August 2021.

Hybrid III-V diamond photonic platform for quantum nodes based on neutral silicon vacancy centers in diamond

Authors: Ding Huang, Alex Abulnaga, Sacha Welinski, Mouktik Raha, Jeff D. Thompson, Nathalie P. de Leon

Abstract: Integrating atomic quantum memories based on color centers in diamond with on-chip photonic devices would enable entanglement distribution over long distances. However, efforts towards integration have been challenging because color centers can be highly sensitive to their environment, and their properties degrade in nanofabricated structures. Here, we describe a heterogeneously integrated, on-chi… ▽ More Integrating atomic quantum memories based on color centers in diamond with on-chip photonic devices would enable entanglement distribution over long distances. However, efforts towards integration have been challenging because color centers can be highly sensitive to their environment, and their properties degrade in nanofabricated structures. Here, we describe a heterogeneously integrated, on-chip, III-V diamond platform designed for neutral silicon vacancy (SiV0) centers in diamond that circumvents the need for etching the diamond substrate. Through evanescent coupling to SiV0 centers near the surface of diamond, the platform will enable Purcell enhancement of SiV0 emission and efficient frequency conversion to the telecommunication C-band. The proposed structures can be realized with readily available fabrication techniques. △ Less

Submitted 29 December, 2020; originally announced December 2020.

New material platform for superconducting transmon qubits with coherence times exceeding 0.3 milliseconds

Authors: Alex P. M. Place, Lila V. H. Rodgers, Pranav Mundada, Basil M. Smitham, Mattias Fitzpatrick, Zhaoqi Leng, Anjali Premkumar, Jacob Bryon, Sara Sussman, Guangming Cheng, Trisha Madhavan, Harshvardhan K. Babla, Berthold Jaeck, Andras Gyenis, Nan Yao, Robert J. Cava, Nathalie P. de Leon, Andrew A. Houck

Abstract: The superconducting transmon qubit is a leading platform for quantum computing and quantum science. Building large, useful quantum systems based on transmon qubits will require significant improvements in qubit relaxation and coherence times, which are orders of magnitude shorter than limits imposed by bulk properties of the constituent materials. This indicates that relaxation likely originates f… ▽ More The superconducting transmon qubit is a leading platform for quantum computing and quantum science. Building large, useful quantum systems based on transmon qubits will require significant improvements in qubit relaxation and coherence times, which are orders of magnitude shorter than limits imposed by bulk properties of the constituent materials. This indicates that relaxation likely originates from uncontrolled surfaces, interfaces, and contaminants. Previous efforts to improve qubit lifetimes have focused primarily on designs that minimize contributions from surfaces. However, significant improvements in the lifetime of two-dimensional transmon qubits have remained elusive for several years. Here, we fabricate two-dimensional transmon qubits that have both lifetimes and coherence times with dynamical decoupling exceeding 0.3 milliseconds by replacing niobium with tantalum in the device. We have observed increased lifetimes for seventeen devices, indicating that these material improvements are robust, paving the way for higher gate fidelities in multi-qubit processors. △ Less

Submitted 28 February, 2020; originally announced March 2020.

Narrow optical linewidths in erbium implanted in TiO$_2$

Authors: Christopher M. Phenicie, Paul Stevenson, Sacha Welinski, Brendon C. Rose, Abraham T. Asfaw, Robert J. Cava, Stephen A. Lyon, Nathalie P. de Leon, Jeff D. Thompson

Abstract: Atomic and atom-like defects in the solid-state are widely explored for quantum computers, networks and sensors. Rare earth ions are an attractive class of atomic defects that feature narrow spin and optical transitions that are isolated from the host crystal, allowing incorporation into a wide range of materials. However, the realization of long electronic spin coherence times is hampered by magn… ▽ More Atomic and atom-like defects in the solid-state are widely explored for quantum computers, networks and sensors. Rare earth ions are an attractive class of atomic defects that feature narrow spin and optical transitions that are isolated from the host crystal, allowing incorporation into a wide range of materials. However, the realization of long electronic spin coherence times is hampered by magnetic noise from abundant nuclear spins in the most widely studied host crystals. Here, we demonstrate that Er$^{3+}$ ions can be introduced via ion implantation into TiO$_2$, a host crystal that has not been studied extensively for rare earth ions and has a low natural abundance of nuclear spins. We observe efficient incorporation of the implanted Er$^{3+}$ into the Ti$^{4+}$ site (40% yield), and measure narrow inhomogeneous spin and optical linewidths (20 and 460 MHz, respectively) that are comparable to bulk-doped crystalline hosts for Er$^{3+}$. This work demonstrates that ion implantation is a viable path to studying rare earth ions in new hosts, and is a significant step towards realizing individually addressed rare earth ions with long spin coherence times for quantum technologies. △ Less

Submitted 13 September, 2019; originally announced September 2019.

Efficient fiber-optical interface for nanophotonic devices

Authors: T. G. Tiecke, K. P. Nayak, J. D. Thompson, T. Peyronel, N. P. de Leon, V. Vuletić, M. D. Lukin

Abstract: We demonstrate a method for efficient coupling of guided light from a single mode optical fiber to nanophotonic devices. Our approach makes use of single-sided conical tapered optical fibers that are evanescently coupled over the last ~10 um to a nanophotonic waveguide. By means of adiabatic mode transfer using a properly chosen taper, single-mode fiber-waveguide coupling efficiencies as high as 9… ▽ More We demonstrate a method for efficient coupling of guided light from a single mode optical fiber to nanophotonic devices. Our approach makes use of single-sided conical tapered optical fibers that are evanescently coupled over the last ~10 um to a nanophotonic waveguide. By means of adiabatic mode transfer using a properly chosen taper, single-mode fiber-waveguide coupling efficiencies as high as 97(1)% are achieved. Efficient coupling is obtained for a wide range of device geometries which are either singly-clamped on a chip or attached to the fiber, demonstrating a promising approach for integrated nanophotonic circuits, quantum optical and nanoscale sensing applications. △ Less

Submitted 26 September, 2014; originally announced September 2014.

Comments: 7 pages, 4 figures, includes supplementary information

Nanophotonic quantum phase switch with a single atom

Authors: T. G. Tiecke, J. D. Thompson, N. P. de Leon, L. R. Liu, V. Vuletić, M. D. Lukin

Abstract: In analogy to transistors in classical electronic circuits, a quantum optical switch is an important element of quantum circuits and quantum networks. Operated at the fundamental limit where a single quantum of light or matter controls another field or material system, it may enable fascinating applications such as long-distance quantum communication, distributed quantum information processing and… ▽ More In analogy to transistors in classical electronic circuits, a quantum optical switch is an important element of quantum circuits and quantum networks. Operated at the fundamental limit where a single quantum of light or matter controls another field or material system, it may enable fascinating applications such as long-distance quantum communication, distributed quantum information processing and metrology, and the exploration of novel quantum states of matter. Here, by strongly coupling a photon to a single atom trapped in the near field of a nanoscale photonic crystal cavity, we realize a system where a single atom switches the phase of a photon, and a single photon modifies the atom's phase. We experimentally demonstrate an atom-induced optical phase shift that is nonlinear at the two-photon level, a photon number router that separates individual photons and photon pairs into different output modes, and a single-photon switch where a single "gate" photon controls the propagation of a subsequent probe field. These techniques pave the way towards integrated quantum nanophotonic networks involving multiple atomic nodes connected by guided light. △ Less

Submitted 22 April, 2014; originally announced April 2014.

Comments: 10 pages, 17 figures, manuscript includes supplementary material

Journal ref: Nature 508, 241-244 (2014)

Tailoring Light-Matter Interaction with a Nanoscale Plasmon Resonator

Authors: Nathalie P. de Leon, Brendan J. Shields, Chun L. Yu, Dirk Englund, Alexey V. Akimov, Mikhail D. Lukin, Hongkun Park

Abstract: We propose and demonstrate a new approach for achieving strong light-matter interactions with quantum emitters. Our approach makes use of a plasmon resonator composed of defect-free, highly crystalline silver nanowires surrounded by patterned dielectric distributed Bragg reflectors (DBRs). These resonators have an effective mode volume (Veff) two orders of magnitude below the diffraction limit and… ▽ More We propose and demonstrate a new approach for achieving strong light-matter interactions with quantum emitters. Our approach makes use of a plasmon resonator composed of defect-free, highly crystalline silver nanowires surrounded by patterned dielectric distributed Bragg reflectors (DBRs). These resonators have an effective mode volume (Veff) two orders of magnitude below the diffraction limit and quality factor (Q) approaching 100, enabling enhancement of spontaneous emission rates by a factor exceeding 75 at the cavity resonance. We also show that these resonators can be used to convert a broadband quantum emitter to a narrowband single-photon source with color-selective emission enhancement. △ Less

Submitted 3 February, 2012; originally announced February 2012.