-
Formation and Microwave Losses of Hydrides in Superconducting Niobium Thin Films Resulting from Fluoride Chemical Processing
Authors:
Carlos G. Torres-Castanedo,
Dominic P. Goronzy,
Thang Pham,
Anthony McFadden,
Nicholas Materise,
Paul Masih Das,
Matthew Cheng,
Dmitry Lebedev,
Stephanie M. Ribet,
Mitchell J. Walker,
David A. Garcia-Wetten,
Cameron J. Kopas,
Jayss Marshall,
Ella Lachman,
Nikolay Zhelev,
James A. Sauls,
Joshua Y. Mutus,
Corey Rae H. McRae,
Vinayak P. Dravid,
Michael J. Bedzyk,
Mark C. Hersam
Abstract:
Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potenti…
▽ More
Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potentially negatively impacting microwave loss performance. Here, we present comprehensive materials characterization of Nb hydrides formed in Nb thin films as a function of fluoride chemical treatments. In particular, secondary-ion mass spectrometry, X-ray scattering, and transmission electron microscopy reveal the spatial distribution and phase transformation of Nb hydrides. The rate of hydride formation is determined by the fluoride solution acidity and the etch rate of Nb2O5, which acts as a diffusion barrier for hydrogen into Nb. The resulting Nb hydrides are detrimental to Nb superconducting properties and lead to increased power-independent microwave loss in coplanar waveguide resonators. However, Nb hydrides do not correlate with two-level system loss or device aging mechanisms. Overall, this work provides insight into the formation of Nb hydrides and their role in microwave loss, thus guiding ongoing efforts to maximize coherence time in superconducting quantum devices.
△ Less
Submitted 5 April, 2024;
originally announced April 2024.
-
Disentangling the sources of ionizing radiation in superconducting qubits
Authors:
L. Cardani,
I. Colantoni,
A. Cruciani,
F. De Dominicis,
G. D'Imperio,
M. Laubenstein,
A. Mariani,
L. Pagnanini,
S. Pirro,
C. Tomei,
N. Casali,
F. Ferroni,
D. Frolov,
L. Gironi,
A. Grassellino,
M. Junker,
C. Kopas,
E. Lachman,
C. R. H. McRae,
J. Mutus,
M. Nastasi,
D. P. Pappas,
R. Pilipenko,
M. Sisti,
V. Pettinacci
, et al. (5 additional authors not shown)
Abstract:
Radioactivity was recently discovered as a source of decoherence and correlated errors for the real-world implementation of superconducting quantum processors. In this work, we measure levels of radioactivity present in a typical laboratory environment (from muons, neutrons, and gamma's emitted by naturally occurring radioactive isotopes) and in the most commonly used materials for the assembly an…
▽ More
Radioactivity was recently discovered as a source of decoherence and correlated errors for the real-world implementation of superconducting quantum processors. In this work, we measure levels of radioactivity present in a typical laboratory environment (from muons, neutrons, and gamma's emitted by naturally occurring radioactive isotopes) and in the most commonly used materials for the assembly and operation of state-of-the-art superconducting qubits. We develop a GEANT-4 based simulation to predict the rate of impacts and the amount of energy released in a qubit chip from each of the mentioned sources. We finally propose mitigation strategies for the operation of next-generation qubits in a radio-pure environment.
△ Less
Submitted 24 November, 2022;
originally announced November 2022.
-
Lateral electrodeposition of MoS2 semiconductor over an insulator
Authors:
Nema Abdelazim,
Yasir J Noori,
Shibin Thomas,
Victoria K Greenacre,
Yisong Han,
Danielle E. Smith,
Giacomo Piana,
Nikolay Zhelev,
Andrew L. Hector,
Richard Beanland,
Gillian Reid,
Philip N Bartlett,
Kees de Groot
Abstract:
Develo** novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS2) over an insulating surface is demonstrated using electrochemical deposition. By fabricating a new type of microelectrodes, MoS2 2D films grown from TiN electrodes across opposite sides…
▽ More
Develo** novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS2) over an insulating surface is demonstrated using electrochemical deposition. By fabricating a new type of microelectrodes, MoS2 2D films grown from TiN electrodes across opposite sides have been connected over an insulating substrate, hence, forming a lateral device structure through only one lithography and deposition step. Using a variety of characterization techniques, the growth rate of MoS2 has been shown to be highly anisotropic with lateral to vertical growth ratios exceeding 20-fold. Electronic and photo-response measurements on the device structures demonstrate that the electrodeposited MoS2 layers behave like semiconductors, confirming their potential for photodetection applications. This lateral growth technique paves the way towards room temperature, scalable and site-selective production of various transition metal dichalcogenides and their lateral heterostructures for 2D materials-based fabricated devices.
△ Less
Submitted 26 November, 2021; v1 submitted 1 April, 2021;
originally announced April 2021.
-
Fabrication of micro fluidic cavities using Si-to-glass anodic bonding
Authors:
N. Zhelev,
T. S. Abhilash,
R. G. Bennett,
E. N. Smith,
B. Ilic,
J. M. Parpia,
L. V. Levitin,
X. Rojas,
A. Casey,
J. Saunders
Abstract:
We demonstrate the fabrication of $\sim$1.08 $μ$m deep microfluidic cavities with characteristic size as large as 7 mm $\times$ 11 mm or 11 mm diameter, using a silicon$-$glass anodic bonding technique that does not require posts to act as separators to define cavity height. Since the phase diagram of $^3$He is significantly altered under confinement, posts might act as pinning centers for phase b…
▽ More
We demonstrate the fabrication of $\sim$1.08 $μ$m deep microfluidic cavities with characteristic size as large as 7 mm $\times$ 11 mm or 11 mm diameter, using a silicon$-$glass anodic bonding technique that does not require posts to act as separators to define cavity height. Since the phase diagram of $^3$He is significantly altered under confinement, posts might act as pinning centers for phase boundaries. The previous generation of cavities relied on full wafer-bonding which is more prone to failure and requires dicing post-bonding, whereas the these cavities are made by bonding a pre-cut piece of Hoya SD-2 glass to a patterned piece of silicon in which the cavity is defined by etching. Anodic bonding was carried out at 425 $^{\circ}$C with 200 V, and we observe that pressurizing the cavity to failure ($>$ 30 bar pressure) results in glass breaking, rather than the glass-silicon bond separation. In this article, we discuss the detailed fabrication of the cavity, its edges, and details of the junction between the coin silver fill line and the silicon base of the cavity that enables a low internal-friction joint. This feature is important for mass coupling torsional oscillator experimental assays of the superfluid inertial contribution where a high quality factor ($Q$) improves frequency resolution. The surface preparation that yields well-characterized smooth surfaces to eliminate pinning sites, the use of transparent glass as a cover permitting optical access, low temperature capability and attachment of pressure-capable ports for fluid access may be features that are important in other applications.
△ Less
Submitted 12 June, 2018; v1 submitted 2 May, 2018;
originally announced May 2018.
