-
Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell
Authors:
Marius H. Zehender,
Simon. A. Svatek,
Myles A. Steiner,
Iván García,
Pablo García Linares,
Emily L. Warren,
Antonio Martí,
Adele. C. Tamboli,
Elisa Antolín
Abstract:
Here we present the experimental results of an inverted three-terminal heterojunction bipolar transistor solar cell (HBTSC) made of GaInP/GaAs. The inverted growth and processing enable contacting the intermediate layer (base) from the bottom, which improves the cell performance by reducing shadow factor and series resistance at the same time. With this prototype we show that an inverted processin…
▽ More
Here we present the experimental results of an inverted three-terminal heterojunction bipolar transistor solar cell (HBTSC) made of GaInP/GaAs. The inverted growth and processing enable contacting the intermediate layer (base) from the bottom, which improves the cell performance by reducing shadow factor and series resistance at the same time. With this prototype we show that an inverted processing of a three-terminal solar cell is feasible and pave the way for the application of epitaxial lift-off, substrate reuse and mechanical stacking to the HBTSC which can eventually lead to a low-cost high-efficiency III-V-on-Si HBTSC technology.
△ Less
Submitted 7 May, 2021;
originally announced May 2021.
-
III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept
Authors:
E. Antolin,
M. H. Zehender,
S. A. Svatek,
P. G. Linares,
A. Marti
Abstract:
We propose a new triple-junction solar cell structure composed of a III-V heterojunction bipolar transistor solar cell (HBTSC) stacked on top of, and series-connected to, a Si solar cell (III-V-HBTSC-on-Si). The HBTSC is a novel three-terminal device, whose viability has been recently experimentally demonstrated. It has the theoretical efficiency limit of an independently-connected double-junction…
▽ More
We propose a new triple-junction solar cell structure composed of a III-V heterojunction bipolar transistor solar cell (HBTSC) stacked on top of, and series-connected to, a Si solar cell (III-V-HBTSC-on-Si). The HBTSC is a novel three-terminal device, whose viability has been recently experimentally demonstrated. It has the theoretical efficiency limit of an independently-connected double-junction solar cell. Here, we perform detailed balance efficiency limit calculations under one-sun illumination that show that the absolute efficiency limit of a III-V-HBTSC-on-Si device is the same as for the conventional current-matched III-V-on-Si triple-junction (47% assuming black-body spectrum, 49% with AM1.5G). However, the range of band-gap energies for which the efficiency limit is above 40% is much wider in the III-V-HBTSC-on-Si stack case. From a technological point of view, the lattice-matched GaInP/GaAs combination is particularly interesting, which has an AM1.5G efficiency limit of 47% with the HBTSC-on-Si structure and 39% if the current-matched III-V-on-Si triple junction is considered. Moreover, we show that interconnecting the terminals of the HBTSC to achieve a two-terminal GaInP/GaAs-HBTSC-on-Si device only reduces the efficiency limit by three points, to 43%. As a result, the GaInP/GaAs-HBTSC-on-Si solar cell becomes a promising device for two-terminal, high-efficiency one-sun operation. For it to also be cost-effective, low-cost technologies must be applied to the III-V material growth, such as high-throughput epitaxy or sequential growth.
△ Less
Submitted 7 May, 2021;
originally announced May 2021.
-
High open-circuit voltage in transition metal dichalcogenide solar cells
Authors:
Simon A. Svatek,
C. Bueno,
Der-Yuh Lin,
James Kerfoot,
Carlos Macías,
Marius H. Zehender,
Ignacio Tobías,
Pablo García-Linares,
Takashi Taniguchi,
Kenji Watanabe,
Peter Beton,
Elisa Antolín
Abstract:
The conversion efficiency of ultra-thin solar cells based on layered materials has been limited by their open-circuit voltage, which is typically pinned to a value under 0.6 V. Here we report an open-circuit voltage of 1.02 V in a 120 nm-thick vertically stacked homojunction fabricated with substitutionally doped MoS2. This high open-circuit voltage is consistent with the band alignment in the MoS…
▽ More
The conversion efficiency of ultra-thin solar cells based on layered materials has been limited by their open-circuit voltage, which is typically pinned to a value under 0.6 V. Here we report an open-circuit voltage of 1.02 V in a 120 nm-thick vertically stacked homojunction fabricated with substitutionally doped MoS2. This high open-circuit voltage is consistent with the band alignment in the MoS2 homojunction, which is more favourable than in widely-used TMDC heterostructures. It is also attributed to the high performance of the substitutionally doped MoS2, in particular the p-type material doped with Nb, which is demonstrated by the observation of electroluminescence from tunnelling graphene/BN/MoS2 structures in spite of the indirect nature of bulk MoS2. We find that illuminating the TMDC/metal contacts decreases the measured open-circuit voltage in MoS2 van der Waals homojunctions because they are photoactive, which points to the need of develo** low-resistance, ohmic contacts to doped MoS2 in order to achieve high efficiency in practical devices. The high open-circuit voltage demonstrated here confirms the potential of layered transition-metal dichalcogenides for the development of highly efficient, ultra-thin solar cells.
△ Less
Submitted 29 September, 2020;
originally announced September 2020.
-
Potential of the three-terminal heterojunction bipolar transistor solar cell for space applications
Authors:
Antonio Martí,
Pablo García-Linares,
Marius Zehender,
Simon A. Svatek,
Irene Artacho,
Ana Belén Cristóbal,
José R. González,
Carsten Baur,
Iñigo Ramiro,
Federica Cappelluti,
Elisa Antolín
Abstract:
Multi-terminal multi-junction solar cells (MJSC) offer higher efficiency potential than series connected (two-terminal) ones. In addition, for terrestrial applications, the efficiency of multi-terminal solar cells is less sensitive to solar spectral variations than the two-terminal series-connected one. In space, generally, cells are always illuminated with AM0 spectrum and no impact is expected f…
▽ More
Multi-terminal multi-junction solar cells (MJSC) offer higher efficiency potential than series connected (two-terminal) ones. In addition, for terrestrial applications, the efficiency of multi-terminal solar cells is less sensitive to solar spectral variations than the two-terminal series-connected one. In space, generally, cells are always illuminated with AM0 spectrum and no impact is expected from spectral variations. Still, in space, the multi-terminal approach offers some advantages in comparison with the series-connected architecture approach derived from a higher end of life (EOL) efficiency. In this work we review the potential of multi-terminal solar cells for achieving extended EOL efficiencies with emphasis in the potential of the three-terminal heterojunction bipolar transistor solar cell, a novel multi-terminal MJSC architecture with a simplified structure not requiring, for example, tunnel junctions.
△ Less
Submitted 14 May, 2020;
originally announced June 2020.
-
Considerations for the design of a heterojunction bipolar transistor solar cell
Authors:
Elisa Antolin,
Marius H. Zehender,
Pablo Garcia-Linares,
Simon A. Svatek,
Antonio Marti
Abstract:
Independent current extraction in multi-junction solar cells has gained attention in recent years because it can deliver higher annual energy yield and can work for more semiconductor material combinations than the more established series-connected multi-junction technology. The heterojunction bipolar transistor solar cell concept (HBTSC) was recently proposed as a simple, compact and cost-effecti…
▽ More
Independent current extraction in multi-junction solar cells has gained attention in recent years because it can deliver higher annual energy yield and can work for more semiconductor material combinations than the more established series-connected multi-junction technology. The heterojunction bipolar transistor solar cell concept (HBTSC) was recently proposed as a simple, compact and cost-effective multi-terminal device structure that allows independent current extraction. It consists of only three main layers: emitter, base and collector. In this work we use a drift-diffusion model to analyze important aspects in the design of an HBTSC structure based on typical III-V semiconductor materials. We find that carrier injection from the emitter into the collector (transistor effect) degrades the open-circuit voltage of the top sub-cell, but this risk can be eliminated by optimizing the base design. We find requirements for the base layer which are, in principle, achievable in the context of current III-V semiconductor technology.
△ Less
Submitted 9 October, 2019;
originally announced October 2019.
