Showing 1–12 of 12 results for author: Zajac, M

Optical Control of Adaptive Nanoscale Domain Networks

Authors: Marc Zajac, Tao Zhou, Tiannan Yang, Sujit Das, Yue Cao, Burak Guzelturk, Vladimir Stoica, Mathew Cherukara, John W. Freeland, Venkatraman Gopalan, Ramamoorthy Ramesh, Lane W. Martin, Long-Qing Chen, Martin Holt, Stephan Hruszkewycz, Haidan Wen

Abstract: Adaptive networks can sense and adjust to dynamic environments to optimize their performance. Understanding their nanoscale responses to external stimuli is essential for applications in nanodevices and neuromorphic computing. However, it is challenging to image such responses on the nanoscale with crystallographic sensitivity. Here, the evolution of nanodomain networks in (PbTiO3)n/(SrTiO3)n supe… ▽ More Adaptive networks can sense and adjust to dynamic environments to optimize their performance. Understanding their nanoscale responses to external stimuli is essential for applications in nanodevices and neuromorphic computing. However, it is challenging to image such responses on the nanoscale with crystallographic sensitivity. Here, the evolution of nanodomain networks in (PbTiO3)n/(SrTiO3)n superlattices was directly visualized in real space as the system adapts to ultrafast repetitive optical excitations that emulate controlled neural inputs. The adaptive response allows the system to explore a wealth of metastable states that were previously inaccessible. Their reconfiguration and competition were quantitatively measured by scanning x-ray nanodiffraction as a function of the number of applied pulses, in which crystallographic characteristics were quantitatively assessed by assorted diffraction patterns using unsupervised machine-learning methods. The corresponding domain boundaries and their connectivity were drastically altered by light, holding promise for light-programmable nanocircuits in analogy to neuroplasticity. Phase-field simulations elucidate that the reconfiguration of the domain networks is a result of the interplay between photocarriers and transient lattice temperature. The demonstrated optical control scheme and the uncovered nanoscopic insights open opportunities for remote control of adaptive nanoscale domain networks. △ Less

Submitted 24 June, 2024; originally announced June 2024.

Quantum embedding study of strain and charge induced Stark effects on the NV$^{-}$ center in diamond

Authors: Gabriel I. López-Morales, Joanna M. Zajac, Johannes Flick, Carlos A. Meriles, Cyrus E. Dreyer

Abstract: The NV$^{-}$ color center in diamond has been demonstrated as a powerful nanosensor for quantum metrology, due to the sensitivity of its optical and spin properties to external electric, magnetic, and strain fields. In view of these applications, we use quantum embedding to derive a many-body description of strain and charge induced Stark effects on the NV$^{-}$ center. We quantify how strain long… ▽ More The NV$^{-}$ color center in diamond has been demonstrated as a powerful nanosensor for quantum metrology, due to the sensitivity of its optical and spin properties to external electric, magnetic, and strain fields. In view of these applications, we use quantum embedding to derive a many-body description of strain and charge induced Stark effects on the NV$^{-}$ center. We quantify how strain longitudinal to the axis of NV$^{-}$ shifts the excited states in energy, while strain with a component transverse to the NV axis splits the degeneracies of the $^{3}E$ and $^{1}E$ states. The largest effects are for the optically relevant $^{3}E$ manifold, which splits into $E_{x}$ and $E_{y}$ with transverse strain. From these responses we extract strain susceptibilities for the $E_{x/y}$ states within the quasi-linear regime. Additionally, we study the many-body dipole matrix elements of the NV$^{-}$ and find a permanent dipole 1.64 D at zero strain, which is $\sim 30 \%$ smaller than that obtained from recent density functional theory calculations. We also determine the transition dipole between the $E_{x}$ and $E_{y}$ and how it evolves with strain. △ Less

Submitted 11 June, 2024; originally announced June 2024.

Infrared Nanoimaging of Hydrogenated Perovskite Nickelate Synaptic Devices

Authors: Sampath Gamage, Sukriti Manna, Marc Zajac, Steven Hancock, Qi Wang, Sarabpreet Singh, Mahdi Ghafariasl, Kun Yao, Tom Tiwald, Tae Joon Park, David P. Landau, Haidan Wen, Subramanian Sankaranarayanan, Pierre Darancet, Shriram Ramanathan, Yohannes Abate

Abstract: Solid-state devices made from correlated oxides such as perovskite nickelates are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nick… ▽ More Solid-state devices made from correlated oxides such as perovskite nickelates are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nickel oxide (H-NdNiO3) devices and reveal how an applied field perturbs dopant distribution at the nanoscale. This perturbation leads to stripe phases of varying conductivity perpendicular to the applied field, which define the macroscale electrical characteristics of the devices. Hyperspectral nano-FTIR imaging in conjunction with density functional theory calculations unveil a real-space map of multiple vibrational states of H-NNO associated with OH stretching modes and their dependence on the dopant concentration. Moreover, the localization of excess charges induces an out-of-plane lattice expansion in NNO which was confirmed by in-situ - x-ray diffraction and creates a strain that acts as a barrier against further diffusion. Our results and the techniques presented here hold great potential to the rapidly growing field of memristors and neuromorphic devices wherein nanoscale ion motion is fundamentally responsible for function. △ Less

Submitted 29 August, 2023; originally announced September 2023.

Comments: 30 pages, 5 figures in the main text and 5 figures in the Supplementary Material

X-ray Free Electron Laser Studies of Electron and Phonon Dynamics of Graphene Adsorbed on Copper

Authors: Hirohito Ogasawara, Han Wang, Jörgen Gladh, Alessandro Gallo, Ralph Page, Johannes Voss, Alan Luntz, Elias Diesen, Frank Abild-Pedersen, Anders Nilsson, Markus Soldemo, Marc Zajac, Andrew Attar, Michelle E. Chen, Sang Wan Cho, Abhishek Katoch, Ki-Jeong Kim, Kyung Hwan Kim, Minseok Kim, Soonnam Kwon, Sang Han Park, Henrique Ribeiro, Sami Sainio, Hsin-Yi Wang, Cheolhee Yang , et al. (1 additional authors not shown)

Abstract: We report optical pum** and X-ray absorption spectroscopy experiments at the PAL free electron laser that directly probe the electron dynamics of a graphene monolayer adsorbed on copper in the femtosecond regime. By analyzing the results with ab-initio theory we infer that the excitation of graphene is dominated by indirect excitation from hot electron-hole pairs created in the copper by the opt… ▽ More We report optical pum** and X-ray absorption spectroscopy experiments at the PAL free electron laser that directly probe the electron dynamics of a graphene monolayer adsorbed on copper in the femtosecond regime. By analyzing the results with ab-initio theory we infer that the excitation of graphene is dominated by indirect excitation from hot electron-hole pairs created in the copper by the optical laser pulse. However, once the excitation is created in graphene, its decay follows a similar path as in many previous studies of graphene adsorbed on semiconductors, i e. rapid excitation of SCOPS (Strongly Coupled Optical Phonons) and eventual thermalization. It is likely that the lifetime of the hot electron-hole pairs in copper governs the lifetime of the electronic excitation of the graphene. △ Less

Submitted 1 November, 2022; originally announced November 2022.

Comments: 22 pages, 8 Figures including Supplementary Material

Geometry and solutions of an epidemic SIS model permitting fluctuations and quantization

Authors: Oğul Esen, Eduardo Fernández-Saiz, Cristina Sardón, Marcin Zając

Abstract: Some recent works reveal that there are models of differential equations for the mean and variance of infected individuals that reproduce the SIS epidemic model at some point. This stochastic SIS epidemic model can be interpreted as a Hamiltonian system, therefore we wondered if it could be geometrically handled through the theory of Lie--Hamilton systems, and this happened to be the case. The pri… ▽ More Some recent works reveal that there are models of differential equations for the mean and variance of infected individuals that reproduce the SIS epidemic model at some point. This stochastic SIS epidemic model can be interpreted as a Hamiltonian system, therefore we wondered if it could be geometrically handled through the theory of Lie--Hamilton systems, and this happened to be the case. The primordial result is that we are able to obtain a general solution for the stochastic/ SIS-epidemic model (with fluctuations) in form of a nonlinear superposition rule that includes particular stochastic solutions and certain constants to be related to initial conditions of the contagion process. The choice of these initial conditions will be crucial to display the expected behavior of the curve of infections during the epidemic. We shall limit these constants to nonsingular regimes and display graphics of the behavior of the solutions. As one could expect, the increase of infected individuals follows a sigmoid-like curve. Lie--Hamiltonian systems admit a quantum deformation, so does the stochastic SIS-epidemic model. We present this generalization as well. If one wants to study the evolution of an SIS epidemic under the influence of a constant heat source (like centrally heated buildings), one can make use of quantum stochastic differential equations coming from the so-called quantum deformation. △ Less

Submitted 6 August, 2020; originally announced August 2020.

Terahertz-based attosecond metrology of relativistic electron beams

Authors: R. K. Li, M. C. Hoffmann, E. A. Nanni, S. H. Glenzer, A. M. Lindenberg, B. K. Ofori-Okai, A. H. Reid, X. Shen, S. P. Weathersby, J. Yang, M. Zajac, X. J. Wang

Abstract: Photons, electrons, and their interplay are at the heart of photonic devices and modern instruments for ultrafast science [1-10]. Nowadays, electron beams of the highest intensity and brightness are created by photoemission with short laser pulses, and then accelerated and manipulated using GHz radiofrequency electromagnetic fields. The electron beams are utilized to directly map photoinduced dyna… ▽ More Photons, electrons, and their interplay are at the heart of photonic devices and modern instruments for ultrafast science [1-10]. Nowadays, electron beams of the highest intensity and brightness are created by photoemission with short laser pulses, and then accelerated and manipulated using GHz radiofrequency electromagnetic fields. The electron beams are utilized to directly map photoinduced dynamics with ultrafast electron scattering techniques, or further engaged for coherent radiation production at up to hard X-ray wavelengths [11-13]. The push towards improved timing precision between the electron beams and pump optical pulses though, has been stalled at the few tens of femtosecond level, due to technical challenges with synchronizing the high power rf fields with optical sources. Here, we demonstrate attosecond electron metrology using laser-generated single-cycle THz radiation, which is intrinsically phase locked to the optical drive pulses, to manipulate multi-MeV relativistic electron beams. Control and single-shot characterization of bright electron beams at this unprecedented level open up many new opportunities for atomic visualization. △ Less

Submitted 4 May, 2018; originally announced May 2018.

Journal ref: Phys. Rev. Accel. Beams 22, 012803 (2019)

Calculations for electron-impact ionization of magnesium and calcium atoms in the method of interacting configurations in the complex number representation

Authors: V. M. Simulik, Y-N. Y. Tsmur, R. V. Tymchyk, T. M. Zajac

Abstract: Next investigations in our program of transition from the He atom to the complex atoms description have been presented. The method of interacting configurations in the complex number representation is under consideration. The spectroscopic characteristics of the Mg and Ca atoms in the problem of the electron-impact ionization of these atoms are investigated. The energies and the widths of the lowe… ▽ More Next investigations in our program of transition from the He atom to the complex atoms description have been presented. The method of interacting configurations in the complex number representation is under consideration. The spectroscopic characteristics of the Mg and Ca atoms in the problem of the electron-impact ionization of these atoms are investigated. The energies and the widths of the lowest autoionizing states of Mg and Ca atoms are calculated. Few results in the photoionization problem on the autoionizing states above the n=2 threshold of helium-like Be ion are presented. △ Less

Submitted 23 June, 2017; originally announced June 2017.

Comments: 6 pages, 4 tables. arXiv admin note: text overlap with arXiv:1608.04078

MSC Class: 81 ACM Class: F.4.3

Calculations for electron-impact ionization of beryllium in the method of interacting configurations in the complex number representation

Authors: V. M. Simulik, T. M. Zajac, R. V. Tymchyk

Abstract: The beginning of the application of the method of interacting configurations in the complex number representation to the compound atomic systems has been presented. The spectroscopic characteristics of the Be atom in the problem of the electron-impact ionization of this atom are investigated. The energies and the widths of the lowest autoionizing states of Be atom are calculated. The beginning of the application of the method of interacting configurations in the complex number representation to the compound atomic systems has been presented. The spectroscopic characteristics of the Be atom in the problem of the electron-impact ionization of this atom are investigated. The energies and the widths of the lowest autoionizing states of Be atom are calculated. △ Less

Submitted 14 August, 2016; originally announced August 2016.

Comments: 5 pages

MSC Class: 81 ACM Class: F.4.3

Indistinguishable single photons with flexible electronic triggering

Authors: Adetunmise C. Dada, Ted S. Santana, Ralph N. E. Malein, Antonios Koutroumanis, Yong Ma, Joanna M. Zajac, Ju Y. Lim, ** D. Song, Brian D. Gerardot

Abstract: A key ingredient for quantum photonic technologies is an on-demand source of indistinguishable single photons. State-of-the-art indistinguishable single-photon sources typically employ resonant excitation pulses with fixed repetition rates, creating a string of single photons with predetermined arrival times. However, in future applications, an independent electronic signal from a larger quantum c… ▽ More A key ingredient for quantum photonic technologies is an on-demand source of indistinguishable single photons. State-of-the-art indistinguishable single-photon sources typically employ resonant excitation pulses with fixed repetition rates, creating a string of single photons with predetermined arrival times. However, in future applications, an independent electronic signal from a larger quantum circuit or network will trigger the generation of an indistinguishable photon. Further, operating the photon source up to the limit imposed by its lifetime is desirable. Here, we report on the application of a true on-demand approach in which we can electronically trigger the precise arrival time of a single photon as well as control the excitation pulse duration based on resonance fluorescence from a single InAs/GaAs quantum dot. We investigate in detail the effect of the finite duration of an excitation $π$ pulse on the degree of photon antibunching. Finally, we demonstrate that highly indistinguishable single photons can be generated using this on-demand approach, enabling maximum flexibility for future applications. △ Less

Submitted 6 May, 2016; v1 submitted 7 January, 2016; originally announced January 2016.

Journal ref: Optica 3, 493-498 (2016)

Polariton condensation in a planar microcavity with InGaAs quantum wells

Authors: Pasquale Cilibrizzi, Alexis Askitopoulos, Matteo Silva, Edmund Clarke, Joanna M. Zajac, Wolfgang Langbein, Pavlos G. Lagoudakis

Abstract: Polariton lattice condensates provide a platform for on chip quantum emulations. Interactions in extended polariton lattices are currently limited by the intrinsic photonic disorder of microcavities. Here, we fabricate a strain compensated planar GaAs/AlAs microcavity with embedded InGaAs quantum wells and report on polariton condensation under non-resonant optical excitation. Evidence of polarito… ▽ More Polariton lattice condensates provide a platform for on chip quantum emulations. Interactions in extended polariton lattices are currently limited by the intrinsic photonic disorder of microcavities. Here, we fabricate a strain compensated planar GaAs/AlAs microcavity with embedded InGaAs quantum wells and report on polariton condensation under non-resonant optical excitation. Evidence of polariton condensation is supported spectroscopically both in reflection and transmission geometry, whilst the observation of a second threshold to photon lasing allows us to conclusively distinguish between the strong- and weak-coupling non-linear regimes. △ Less

Submitted 24 July, 2014; originally announced July 2014.

Comments: 3 pages, 3 figures

Journal ref: Appl. Phys. Lett. 105, 191118 (2014)

Structure and zero-dimensional polariton spectrum of natural defects in GaAs/AlAs microcavities

Authors: Joanna M Zajac, Wolfgang Langbein

Abstract: We present a correlative study of structural and optical properties of natural defects in planar semiconductor microcavities grown by molecular beam epitaxy, which are showing a localized polariton spectrum as reported in Zajac et al., Phys. Rev. B 85, 165309 (2012). The three-dimensional spatial structure of the defects was studied using combined focussed ion beam (FIB) and scanning electron micr… ▽ More We present a correlative study of structural and optical properties of natural defects in planar semiconductor microcavities grown by molecular beam epitaxy, which are showing a localized polariton spectrum as reported in Zajac et al., Phys. Rev. B 85, 165309 (2012). The three-dimensional spatial structure of the defects was studied using combined focussed ion beam (FIB) and scanning electron microscopy (SEM). We find that the defects originate from a local increase of a GaAs layer thickness. Modulation heights of up to 140nm for oval defects and 90nm for round defects are found, while the lateral extension is about 2um for oval and 4um for round defects. The GaAs thickness increase is attributed to Ga droplets deposited during growth due to Ga cell spitting. Following the droplet deposition, the thickness modulation expands laterally while reducing its height, yielding oval to round mounds of the interfaces and the surface. With increasing growth temperature, the ellipticity of the mounds is decreasing and their size is increasing. This suggests that the expansion is related to the surface mobility of Ga, which with increasing temperature is increasing and reducing its anisotropy between the [110] and [1-10] crystallographic directions. Comprehensive data consisting of surface profiles of defects measured using differential interference contrast (DIC) microscopy, volume information obtained using FIB/SEM, and characterization of the resulting confined polariton spectrum are presented. △ Less

Submitted 1 August, 2012; originally announced August 2012.

Journal ref: Phys. Rev. B 86,195401(2012)

Polariton states bound to defects in GaAs/AlAs planar microcavities

Authors: Joanna M Zajac, Wolfgang Langbein, Maxime Hugues, Mark Hopkinson

Abstract: We report on polariton states bound to defects in planar GaAs/AlAs microcavities grown by molecular beam epitaxy. The defect types relevant for the spatial polariton dynamics in these structures are cross-hatch misfit dislocations, and point-like defects extended over several micrometers. We attribute the latter defects to Ga droplets emitted occasionally by the Ga cell during the growth. These de… ▽ More We report on polariton states bound to defects in planar GaAs/AlAs microcavities grown by molecular beam epitaxy. The defect types relevant for the spatial polariton dynamics in these structures are cross-hatch misfit dislocations, and point-like defects extended over several micrometers. We attribute the latter defects to Ga droplets emitted occasionally by the Ga cell during the growth. These defects, also known as oval defects, result in a dome-like local modulation of surface, which is translated into the cavity structure and leads to a lateral modulation of the cavity polariton energy of up to 15\,meV. The resulting spatially localized potential landscape for the in-plane polariton motion creates a series of bound states. These states were characterized by spectrally resolved transmission imaging in real and reciprocal space, and reveal the spatial potential created by the defects. Interestingly, the defect states exhibit long lifetimes in the 10ps range, which we attribute to a spatially smooth confinement potential. △ Less

Submitted 25 November, 2011; originally announced November 2011.

Journal ref: Phys. Rev. B 85, 165309 (2012)