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Photonic-Electronic Integrated Circuits for High-Performance Computing and AI Accelerator
Authors:
Shupeng Ning,
Hanqing Zhu,
Chenghao Feng,
Jiaqi Gu,
Zhixing Jiang,
Zhoufeng Ying,
Jason Midkiff,
Sourabh Jain,
May H. Hlaing,
David Z. Pan,
Ray T. Chen
Abstract:
In recent decades, the demand for computational power has surged, particularly with the rapid expansion of artificial intelligence (AI). As we navigate the post-Moore's law era, the limitations of traditional electrical digital computing, including process bottlenecks and power consumption issue, are propelling the search for alternative computing paradigms. Among various emerging technologies, in…
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In recent decades, the demand for computational power has surged, particularly with the rapid expansion of artificial intelligence (AI). As we navigate the post-Moore's law era, the limitations of traditional electrical digital computing, including process bottlenecks and power consumption issue, are propelling the search for alternative computing paradigms. Among various emerging technologies, integrated photonics stands out as a promising solution for the next generation of high-performance computing due to the inherent advantages of light, such as low latency, high bandwidth, and unique multiplexing techniques. Furthermore, the progress in photonic integrated circuits (PICs), which are equipped with abundant photoelectronic components, positions photonic-electronic integrated circuits as a viable solution for high-performance computing and as hardware AI accelerators. In this review, we survey recent advancements in both PIC-based digital and analog computing for AI, exploring the principal benefits and obstacles of implementation. Additionally, we propose a comprehensive analysis of photonic AI from the perspectives of hardware implementation, accelerator architecture, and software-hardware co-design. In the end, acknowledging the existing challenges, we underscore potential strategies for overcoming these issues and offer insights into the future drivers for optical computing.
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Submitted 21 March, 2024;
originally announced March 2024.
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A compact butterfly-style silicon photonic-electronic neural chip for hardware-efficient deep learning
Authors:
Chenghao Feng,
Jiaqi Gu,
Hanqing Zhu,
Zhoufeng Ying,
Zheng Zhao,
David Z. Pan,
Ray T. Chen
Abstract:
The optical neural network (ONN) is a promising hardware platform for next-generation neurocomputing due to its high parallelism, low latency, and low energy consumption. Previous ONN architectures are mainly designed for general matrix multiplication (GEMM), leading to unnecessarily large area cost and high control complexity. Here, we move beyond classical GEMM-based ONNs and propose an optical…
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The optical neural network (ONN) is a promising hardware platform for next-generation neurocomputing due to its high parallelism, low latency, and low energy consumption. Previous ONN architectures are mainly designed for general matrix multiplication (GEMM), leading to unnecessarily large area cost and high control complexity. Here, we move beyond classical GEMM-based ONNs and propose an optical subspace neural network (OSNN) architecture, which trades the universality of weight representation for lower optical component usage, area cost, and energy consumption. We devise a butterfly-style photonic-electronic neural chip to implement our OSNN with up to 7x fewer trainable optical components compared to GEMM-based ONNs. Additionally, a hardware-aware training framework is provided to minimize the required device programming precision, lessen the chip area, and boost the noise robustness. We experimentally demonstrate the utility of our neural chip in practical image recognition tasks, showing that a measured accuracy of 94.16% can be achieved in hand-written digit recognition tasks with 3-bit weight programming precision.
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Submitted 17 July, 2022; v1 submitted 11 November, 2021;
originally announced November 2021.
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Efficient On-Chip Learning for Optical Neural Networks Through Power-Aware Sparse Zeroth-Order Optimization
Authors:
Jiaqi Gu,
Chenghao Feng,
Zheng Zhao,
Zhoufeng Ying,
Ray T. Chen,
David Z. Pan
Abstract:
Optical neural networks (ONNs) have demonstrated record-breaking potential in high-performance neuromorphic computing due to their ultra-high execution speed and low energy consumption. However, current learning protocols fail to provide scalable and efficient solutions to photonic circuit optimization in practical applications. In this work, we propose a novel on-chip learning framework to releas…
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Optical neural networks (ONNs) have demonstrated record-breaking potential in high-performance neuromorphic computing due to their ultra-high execution speed and low energy consumption. However, current learning protocols fail to provide scalable and efficient solutions to photonic circuit optimization in practical applications. In this work, we propose a novel on-chip learning framework to release the full potential of ONNs for power-efficient in situ training. Instead of deploying implementation-costly back-propagation, we directly optimize the device configurations with computation budgets and power constraints. We are the first to model the ONN on-chip learning as a resource-constrained stochastic noisy zeroth-order optimization problem, and propose a novel mixed-training strategy with two-level sparsity and power-aware dynamic pruning to offer a scalable on-chip training solution in practical ONN deployment. Compared with previous methods, we are the first to optimize over 2,500 optical components on chip. We can achieve much better optimization stability, 3.7x-7.6x higher efficiency, and save >90% power under practical device variations and thermal crosstalk.
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Submitted 5 September, 2021; v1 submitted 21 December, 2020;
originally announced December 2020.
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Negative compressibility in MoS2 capacitance
Authors:
Ruiyan Gao,
Zhehan Ying,
Liheng An,
Zefei Wu,
Xiangbing Cai,
Shi Wang,
Ziqing Ye,
Xuemeng Feng,
Meizheng Huang,
Ning Wang
Abstract:
Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a newly emerged two-dimensional channel material, molybdenum disulfide (MoS2). The enhancement effects are due to strong electron-electron interaction at the low…
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Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a newly emerged two-dimensional channel material, molybdenum disulfide (MoS2). The enhancement effects are due to strong electron-electron interaction at the low carrier density regime in MoS2. We achieve about 50% capacitance enhancement in monolayer devices and 10% capacitance enhancement in bilayer devices. However, the enhancement effect is not obvious in multilayer (layer number >3) devices. Using the Hartree-Fock approximation, we illustrate the same trend in our inverse compressibility data.
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Submitted 3 February, 2020;
originally announced February 2020.
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No-go theorem for the description of Mott phenomena with conventional Density Functional Theory methods
Authors:
Zu-Jian Ying,
Valentina Brosco,
Giorgia Maria Lopez,
Daniele Varsano,
Paola Gori-Giorgi,
José Lorenzana
Abstract:
Density functional theory provides the most widespread framework for the realistic description of the electronic structure of solids, but the description of strongly-correlated systems has remained so far elusive. Here we consider a particular limit of electrons in a periodic ionic potential in which a one-band description becomes exact all the way from the weakly-correlated metallic regime to the…
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Density functional theory provides the most widespread framework for the realistic description of the electronic structure of solids, but the description of strongly-correlated systems has remained so far elusive. Here we consider a particular limit of electrons in a periodic ionic potential in which a one-band description becomes exact all the way from the weakly-correlated metallic regime to the strongly-correlated Mott-Hubbard regime. We provide a necessary condition a density functional should fulfill to describe Mott-Hubbard behavior and show that it is not satisfied by standard and widely used local, semilocal and hybrid functionals. We illustrate the condition in the case of a few-atom system and provide an analytic approximation to the exact exchange-correlation potential based on a variational wave function which shows explicitly the correct behavior providing a robust scheme to combine lattice and continuum methods.
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Submitted 12 October, 2015;
originally announced October 2015.
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Experimental research on the THGEM-based thermal neutron detector
Authors:
Yang Lei,
Zhou Jian-Rong,
Sun Zhi-Jia,
Zhang Ying,
Huang Chao-Qiang,
Sun Guang-Ai,
Wang Yan-Feng,
Yang Gui-An,
Xu Hong,
Xie Yu-Guang,
Chen Yuan-Bo
Abstract:
A new thermal neutron detector with the domestically produced THGEM (THick Gas Electron Multiplier) was developed as an alternative to 3He to meet the needs of the next generation of neutron facilities. One type of Au-coated THGEM was designed specifically for the neutron detection. A detector prototype had been developed and the preliminary experimental tests were presented, including the perform…
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A new thermal neutron detector with the domestically produced THGEM (THick Gas Electron Multiplier) was developed as an alternative to 3He to meet the needs of the next generation of neutron facilities. One type of Au-coated THGEM was designed specifically for the neutron detection. A detector prototype had been developed and the preliminary experimental tests were presented, including the performance of the Au-coated THGEM working in the Ar/CO2 gas mixtures and the neutron imaging test with 252CF source, which would provide the reference of experimental data for the research in future.
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Submitted 5 August, 2014;
originally announced August 2014.
