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Hardness Descriptor Derived from Symbolic Regression
Authors:
Christian Tantardini,
Hayk A. Zakaryan,
Zhong-Kang Han,
Tariq Altalhi,
Sergey V. Levchenko,
Alexander G. Kvashnin,
Boris I. Yakobson
Abstract:
Hardness is a materials' property with implications in the different industrial fields, including oil and gas, manufacturing, and others. However, the relationship between this macroscale property and atomic (i.e., microscale) properties is unknown and in the last decade several models have tried to give an answer. The understanding of such relationship is of fundamental importance for discovery o…
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Hardness is a materials' property with implications in the different industrial fields, including oil and gas, manufacturing, and others. However, the relationship between this macroscale property and atomic (i.e., microscale) properties is unknown and in the last decade several models have tried to give an answer. The understanding of such relationship is of fundamental importance for discovery of harder materials with specific characteristics to be employed in different fields. In this work, we have found a physical descriptor for Vickers hardness using a symbolic-regression artificial-intelligence approach based on compressed sensing. The approach (SISSO - sure independence screening plus sparsifying operator) combines materials' features (properties), obtained from atomistic simulations, with experimental values of the target property (Vikers hardness) for 635 compounds to develop the descriptor. The experimental values of hardness for binary, ternary, and quaternary transition-metal borides, carbides, nitrides, carbonitrides, carboborides, and boronitrides were included in the dataset. The found descriptor is a non-linear function of the microscopic properties, with the most significant contribution being from a combination of Voigt-averaged bulk modulus, Poisson's ratio, and Reuss-averaged shear modulus. Results of high-throughput screening of 635 candidate materials using the found descriptor suggest the enhancement of material's hardness through mixing with harder yet metastable structures (e.g., metastable VN, TaN, ReN$_2$, Cr$_3$N$_4$, and ZrB$_6$ all exhibit high hardness).
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Submitted 16 January, 2024; v1 submitted 25 April, 2023;
originally announced April 2023.
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Nanoscale probing of image-potential states and electron transfer do** in borophene polymorphs
Authors:
Xiaolong Liu,
Luqing Wang,
Boris I. Yakobson,
Mark C. Hersam
Abstract:
Using field-emission resonance spectroscopy with an ultrahigh vacuum scanning tunneling microscope, we reveal Stark-shifted image-potential states of the v_1/6 and v_1/5 borophene polymorphs on Ag(111) with long lifetimes, suggesting high borophene lattice and interface quality. These image-potential states allow the local work function and interfacial charge transfer of borophene to be probed at…
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Using field-emission resonance spectroscopy with an ultrahigh vacuum scanning tunneling microscope, we reveal Stark-shifted image-potential states of the v_1/6 and v_1/5 borophene polymorphs on Ag(111) with long lifetimes, suggesting high borophene lattice and interface quality. These image-potential states allow the local work function and interfacial charge transfer of borophene to be probed at the nanoscale and test the widely employed self-do** model of borophene. Supported by apparent barrier height measurements and density functional theory calculations, electron transfer do** occurs for both borophene phases from the Ag(111) substrate. In contradiction with the self-do** model, a higher electron transfer do** level occurs for denser v_1/6 borophene compared to v_1/5 borophene, thus revealing the importance of substrate effects on borophene electron transfer.
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Submitted 18 November, 2020;
originally announced November 2020.
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Heterobilayers of 2D materials as a platform for excitonic superfluidity
Authors:
Sunny Gupta,
Alex Kutana,
Boris I. Yakobson
Abstract:
Excitonic condensate has been long-sought within bulk indirect-gap semiconductors, quantum wells, and 2D material layers, all tried as carrying media. Here we propose intrinsically stable 2D semiconductor heterostructures with doubly-indirect overlap** bands as optimal platforms for excitonic condensation. After screening hundreds of 2D materials, we identify candidates where spontaneous exciton…
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Excitonic condensate has been long-sought within bulk indirect-gap semiconductors, quantum wells, and 2D material layers, all tried as carrying media. Here we propose intrinsically stable 2D semiconductor heterostructures with doubly-indirect overlap** bands as optimal platforms for excitonic condensation. After screening hundreds of 2D materials, we identify candidates where spontaneous excitonic condensation mediated by purely electronic interaction should occur, and hetero-pairs Sb2Te2Se/BiTeCl, Hf2N2I2/Zr2N2Cl2, and LiAlTe2/BiTeI emerge promising. Unlike monolayers, where excitonic condensation is hampered by Peierls instability, or other bilayers, where do** by applied voltage is required, rendering them essentially non-equilibrium systems, the chemically-specific heterostructures predicted here are lattice-matched, show no detrimental electronic instability, and display broken type-III gap, thus offering optimal carrier density without any gate voltages, in true-equilibrium. Predicted materials can be used to access different parts of electron-hole phase diagram, including BEC-BCS crossover, enabling tantalizing applications in superfluid transport, Josephson-like tunneling, and dissipationless charge counterflow.
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Submitted 18 May, 2020; v1 submitted 16 August, 2019;
originally announced August 2019.
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In Pursuit of 2D Materials for Maximum Optical Response
Authors:
Sunny Gupta,
Sharmila N. Shirodkar,
Alex Kutana,
Boris I. Yakobson
Abstract:
Despite being only a few atoms thick, single-layer two-dimensional (2D) materials display strong electron-photon interactions that could be utilized in efficient light modulators on extreme subwavelength scales. In various applications involving light modulation and manipulation, materials with strong optical response at different wavelengths are required. Using qualitative analytical modeling and…
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Despite being only a few atoms thick, single-layer two-dimensional (2D) materials display strong electron-photon interactions that could be utilized in efficient light modulators on extreme subwavelength scales. In various applications involving light modulation and manipulation, materials with strong optical response at different wavelengths are required. Using qualitative analytical modeling and first-principles calculations, we determine the theoretical limit of the maximum optical response such as absorbance (A) and reflectance (R) in 2D materials and also conduct a computational survey to seek out those with best A and R in various frequency ranges, from mid-infrared (IR) to deep ultraviolet (UV). We find that 2D boron has broadband reflectance R >99% for >100 layers, surpassing conventional thin films of bulk metals such as silver. Moreover, we identify 2D monolayer semiconductors with maximum response, for which we obtain quantitative estimates by calculating quasiparticle energies and accounting for excitonic effects by solving the Bethe-Salpeter equation (BSE). We found several monolayer semiconductors with absorbances >30% in different optical ranges which are more than half of the maximum possible value for a 2D material. Our study predicts 2D materials which can potentially be used in ultra-thin reflectors and absorbers for optoelectronic application in various frequency ranges.
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Submitted 17 September, 2018;
originally announced September 2018.
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Electrostatic properties and current transport of two-dimensional Schottky barrier diode
Authors:
Fangbo Xu,
Alex Kutana,
Yang Yang,
Boris I. Yakobson
Abstract:
Recently demonstrated metal-semiconductor heterojunctions with few-atom thickness show their promise as 2D Schottky contacts for future integrated circuits and nanoelectronics. The theory for 3D Schottky contacts, however, fails on these low-dimensional systems. Here, we propose a new model that yields carrier distribution and potential profile across the 2D metal-semiconductor heterojunction unde…
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Recently demonstrated metal-semiconductor heterojunctions with few-atom thickness show their promise as 2D Schottky contacts for future integrated circuits and nanoelectronics. The theory for 3D Schottky contacts, however, fails on these low-dimensional systems. Here, we propose a new model that yields carrier distribution and potential profile across the 2D metal-semiconductor heterojunction under the equilibrium condition, based on the input from first-principle calculations. Our calculation also suggests that, at the same forward bias, the current density of a stack of 2D graphene-phosphorene Schottky diodes may be ten thousand times higher than that of a traditional 3D Schottky diode and offer less energy dissipation.
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Submitted 23 April, 2017;
originally announced April 2017.
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Controlled Synthesis of Organic/Inorganic van der Waals Solid for Tunable Light-matter Interactions
Authors:
Lin Niu,
Xinfeng Liu,
Chunxiao Cong,
Chunyang Wu,
Di Wu,
Tay Rong Chang,
Hong Wang,
Qingsheng Zeng,
Jiadong Zhou,
Xingli Wang,
Wei Fu,
Peng Yu,
Qundong Fu,
Sina Najmaei,
Zhuhua Zhang,
Boris I. Yakobson,
Beng Kang Tay,
Wu Zhou,
Horng Tay Jeng,
Hsin Lin,
Tze Chien Sum,
Chuanhong **,
Haiyong He,
Ting Yu,
Zheng Liu
Abstract:
Van der Waals (vdW) solids, as a new type of artificial materials that consist of alternating layers bonded by weak interactions, have shed light on fascinating optoelectronic device concepts. As a result, a large variety of vdW devices have been engineered via layer-by-layer stacking of two-dimensional materials, although shadowed by the difficulties of fabrication. Alternatively, direct growth o…
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Van der Waals (vdW) solids, as a new type of artificial materials that consist of alternating layers bonded by weak interactions, have shed light on fascinating optoelectronic device concepts. As a result, a large variety of vdW devices have been engineered via layer-by-layer stacking of two-dimensional materials, although shadowed by the difficulties of fabrication. Alternatively, direct growth of vdW solids has proven as a scalable and swift way, highlighted by the successful synthesis of graphene/h-BN and transition metal dichalcogenides (TMDs) vertical heterostructures from controlled vapor deposition. Here, we realize high-quality organic and inorganic vdW solids, using methylammonium lead halide (CH3NH3PbI3) as the organic part (organic perovskite) and 2D inorganic monolayers as counterparts. By stacking on various 2D monolayers, the vdW solids behave dramatically different in light emission. Our studies demonstrate that h-BN monolayer is a great complement to organic perovskite for preserving its original optical properties. As a result, organic/h-BN vdW solid arrays are patterned for red light emitting. This work paves the way for designing unprecedented vdW solids with great potential for a wide spectrum of applications in optoelectronics.
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Submitted 18 June, 2015; v1 submitted 10 June, 2015;
originally announced June 2015.
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Kinetically determined shapes of grain boundaries in CVD graphene
Authors:
Ksenia V. Bets,
Vasilii I. Artyukhov,
Boris I. Yakobson
Abstract:
Predicting the shape of grain boundaries is essential to control results of the growth of large graphene crystals. A global energy minimum search predicting the most stable final structure contradicts experimental observations. Here we present Monte Carlo simulation of kinetic formation of grain boundaries (GB) in graphene during collision of two growing graphene flakes. Analysis of the resulting…
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Predicting the shape of grain boundaries is essential to control results of the growth of large graphene crystals. A global energy minimum search predicting the most stable final structure contradicts experimental observations. Here we present Monte Carlo simulation of kinetic formation of grain boundaries (GB) in graphene during collision of two growing graphene flakes. Analysis of the resulting GBs for the full range of misorientation angles $α$ allowed us to identify a hidden (from post facto analysis such as microscopy) degree of freedom - the edge misorientation angle $β$. Edge misorientation characterizes initial structure rather than final structure and therefore provides more information about growth conditions. Use of $β$ enabled us to explain disagreements between the experimental observations and theoretical work. Finally, we report an analysis of an interesting special case of zero-tilt GBs for which structure is determined by two variables describing the relative shift of initial islands. We thereby present analysis of the full range of tilt GB ( $β\neq$ 0) and translational GB ( $β$ = 0). Based on our findings we propose strategies of controlling the GB morphology in experiments, which paves the way to a better control over graphene structure and properties for advanced applications.
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Submitted 14 December, 2014;
originally announced December 2014.
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Why do nanotubes grow chiral?
Authors:
Vasilii I. Artyukhov,
Evgeni S. Penev,
Boris I. Yakobson
Abstract:
Carbon nanotubes (CNT) hold enormous technological promise. It can only be harnessed if one controls in a practical way the CNT chirality, the feature of the tubular carbon topology that governs all the CNT properties---electronic, optical, mechanical. Experiments in catalytic growth over the last decade have repeatedly revealed a puzzling strong preference towards minimally-chiral (near-armchair)…
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Carbon nanotubes (CNT) hold enormous technological promise. It can only be harnessed if one controls in a practical way the CNT chirality, the feature of the tubular carbon topology that governs all the CNT properties---electronic, optical, mechanical. Experiments in catalytic growth over the last decade have repeatedly revealed a puzzling strong preference towards minimally-chiral (near-armchair) CNT, challenging any existing hypotheses and turning chirality control ever more tantalizing yet leaving its understanding elusive. Here we combine the CNT/catalyst interface thermodynamics with the kinetic growth theory to show that the unusual near-armchair peaks emerge from the two antagonistic trends: energetic preference towards achiral CNT/catalyst interfaces vs. faster growth of chiral CNT. This narrow distribution is profoundly related with the peaked behavior of a simple function, x*exp(-x).
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Submitted 29 May, 2014;
originally announced May 2014.
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Breaking of symmetry in graphene growth on metal substrates
Authors:
Vasilii I. Artyukhov,
Yufeng Hao,
Rodney S. Ruoff,
Boris I. Yakobson
Abstract:
In graphene growth, island symmetry can become lower than the intrinsic symmetries of both graphene and the substrate. First-principles calculations and Monte Carlo modeling explain the shapes observed in our experiments and earlier studies for various metal surface symmetries. For equilibrium shape, edge energy variations $δE$ manifest in distorted hexagons with different ground-state edge struct…
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In graphene growth, island symmetry can become lower than the intrinsic symmetries of both graphene and the substrate. First-principles calculations and Monte Carlo modeling explain the shapes observed in our experiments and earlier studies for various metal surface symmetries. For equilibrium shape, edge energy variations $δE$ manifest in distorted hexagons with different ground-state edge structures. In growth or nucleation, energy variation enters exponentially as $\sim e^{δE / k_{B} T}$, strongly amplifying the symmetry breaking, up to completely changing the shapes to triangular, ribbon-like, or rhombic.
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Submitted 12 March, 2015; v1 submitted 22 May, 2014;
originally announced May 2014.
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Site-Percolation Threshold of Carbon Nanotube Fibers: Fast Inspection of Percolation with Markov Stochastic Theory
Authors:
Fangbo Xu,
Zhi** Xu,
Boris I. Yakobson
Abstract:
We present a site-percolation model based on a modified FCC lattice, as well as an efficient algorithm of inspecting percolation which takes advantage of the Markov stochastic theory, in order to study the percolation threshold of carbon nanotube (CNT) fibers. Our Markov-chain based algorithm carries out the inspection of percolation by performing repeated sparse matrix-vector multiplications, whi…
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We present a site-percolation model based on a modified FCC lattice, as well as an efficient algorithm of inspecting percolation which takes advantage of the Markov stochastic theory, in order to study the percolation threshold of carbon nanotube (CNT) fibers. Our Markov-chain based algorithm carries out the inspection of percolation by performing repeated sparse matrix-vector multiplications, which allows parallelized computation to accelerate the inspection for a given configuration. With this approach, we determine that the site-percolation transition of CNT fibers occurs at p_c =0.1533+-0.0013, and analyze the dependence of the effective percolation threshold (corresponding to 0.5 percolation probability) on the length and the aspect ratio of a CNT fiber on a finite-size-scaling basis. We also discuss the aspect ratio dependence of percolation probability with various values of p (not restricted to p_c).
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Submitted 8 January, 2014;
originally announced January 2014.
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Intrinsic Magnetism of Grain Boundaries in Two-dimensional Metal Dichalcogenides
Authors:
Zhuhua Zhang,
Xiaolong Zou,
Vincent H. Crespi,
Boris I. Yakobson
Abstract:
Grain boundaries (GBs) are structural imperfections that typically degrade the performance of materials. Here we show that dislocations and GBs in two-dimensional (2D) metal dichalcogenides MX2 (M = Mo, W; X = S, Se) can actually improve the material by giving it a qualitatively new physical property: magnetism. The dislocations studied all have a substantial magnetic moment of ~1 Bohr magneton. I…
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Grain boundaries (GBs) are structural imperfections that typically degrade the performance of materials. Here we show that dislocations and GBs in two-dimensional (2D) metal dichalcogenides MX2 (M = Mo, W; X = S, Se) can actually improve the material by giving it a qualitatively new physical property: magnetism. The dislocations studied all have a substantial magnetic moment of ~1 Bohr magneton. In contrast, dislocations in other well-studied 2D materials are typically non-magnetic. GBs composed of pentagon-heptagon pairs interact ferromagnetically and transition from semiconductor to half-metal or metal as a function of tilt angle and/or do** level. When the tilt angle exceeds 47° the structural energetics favor square-octagon pairs and the GB becomes an antiferromagnetic semiconductor. These exceptional magnetic properties arise from an interplay of dislocation-induced localized states, do**, and locally unbalanced stoichiometry. Purposeful engineering of topological GBs may be able to convert MX2 into a promising 2D magnetic semiconductor.
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Submitted 20 August, 2013;
originally announced August 2013.
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Carbyne from first principles: Chain of C atoms, a nanorod or a nanorope?
Authors:
Mingjie Liu,
Vasilii I. Artyukhov,
Hoonkyung Lee,
Fangbo Xu,
Boris I. Yakobson
Abstract:
We report an extensive study of the properties of carbyne using first-principles calculations. We investigate carbyne's mechanical response to tension, bending, and torsion deformations. Under tension, carbyne is about twice as stiff as the stiffest known materials and has an unrivaled specific strength of up to 7.5*10^7 Nm/kg, requiring a force of ~10 nN to break a single atomic chain. Carbyne ha…
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We report an extensive study of the properties of carbyne using first-principles calculations. We investigate carbyne's mechanical response to tension, bending, and torsion deformations. Under tension, carbyne is about twice as stiff as the stiffest known materials and has an unrivaled specific strength of up to 7.5*10^7 Nm/kg, requiring a force of ~10 nN to break a single atomic chain. Carbyne has a fairly large room-temperature persistence length of about 14 nm. Surprisingly, the torsional stiffness of carbyne can be zero but can be 'switched on' by appropriate functional groups at the ends. Further, under appropriate termination, carbyne can be switched into a magnetic-semiconductor state by mechanical twisting. We reconstruct the equivalent continuum-elasticity representation, providing the full set of elastic moduli for carbyne, showing its extreme mechanical performance (e.g. a nominal Young's modulus of 32.7 TPa with an effective mechanical thickness of 0.772 A). We also find an interesting coupling between strain and band gap of carbyne, which is strongly increased under tension, from 3.2 to 4.4 eV under a 10% strain. Finally, we study the performance of carbyne as a nanoscale electrical cable, and estimate its chemical stability against self-aggregation, finding an activation barrier of 0.6 eV for the carbyne-carbyne cross-linking reaction and an equilibrium cross-link density for two parallel carbyne chains of 1 cross-link per 17 C atoms (2.2 nm).
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Submitted 2 December, 2013; v1 submitted 9 August, 2013;
originally announced August 2013.
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Mechanically induced metal-insulator transition in carbyne
Authors:
Vasilii I. Artyukhov,
Mingjie Liu,
Boris I. Yakobson
Abstract:
First-principles calculations for carbyne under strain predict that the Peierls transition from symmetric cumulene to broken-symmetry polyyne structure is enhanced as the material is stretched. Interpretation within a simple and instructive analytical model suggests that this behavior is valid for arbitrary 1D metals. Further, numerical calculations of the anharmonic quantum vibrational structure…
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First-principles calculations for carbyne under strain predict that the Peierls transition from symmetric cumulene to broken-symmetry polyyne structure is enhanced as the material is stretched. Interpretation within a simple and instructive analytical model suggests that this behavior is valid for arbitrary 1D metals. Further, numerical calculations of the anharmonic quantum vibrational structure of carbyne show that zero-point atomic vibrations alone eliminate the Peierls distortion in a mechanically free chain, preserving the cumulene symmetry. The emergence and increase of Peierls dimerization under tension then implies a qualitative transition between the two forms, which our computations place around 3% strain. Thus, zero-point vibrations and mechanical strain jointly produce a change in symmetry resulting in the transition from metallic to insulating state. In any practical realization, it is important that the effect is also chemically modulated by the choice of terminating groups. Our findings are promising for applications such as electromechanical switching and band gap tuning via strain, and besides carbyne itself, they directly extend to numerous other systems that show Peierls distortion.
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Submitted 1 June, 2013; v1 submitted 28 February, 2013;
originally announced February 2013.
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Graphene Nucleation on Transition Metal Surface: Structure Transformation and Role of the Metal Step Edge
Authors:
Junfeng Gao,
Joanne Yip,
Jijun Zhao,
Boris I. Yakobson,
Feng Ding
Abstract:
The nucleation of graphene on a transition metal (TM) surface, either on a terrace or near a step edge, is systematically explored using density functional theory (DFT) calculations and applying the two-dimensional (2D) crystal nucleation theory. Careful optimization of the supported carbon clusters, CN (with size N ranging from 1 to 24), on the Ni(111) surface indicates a ground state structure t…
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The nucleation of graphene on a transition metal (TM) surface, either on a terrace or near a step edge, is systematically explored using density functional theory (DFT) calculations and applying the two-dimensional (2D) crystal nucleation theory. Careful optimization of the supported carbon clusters, CN (with size N ranging from 1 to 24), on the Ni(111) surface indicates a ground state structure transformation from a one-dimensional (1D) C chain to a two-dimensional (2D) sp2 C network at N ~ 10-12. Furthermore, the crucial parameters controlling graphene growth on the metal surface, nucleation barrier, nucleus size, and the nucleation rate on a terrace or near a step edge, are calculated. In agreement with numerous experimental observations, our analysis shows that graphene nucleation near a metal step edge is superior to that on a terrace. Based on our analysis, we propose the use of seeded graphene to synthesize high-quality graphene in large area.
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Submitted 31 March, 2011;
originally announced April 2011.
