Three-Photon Absorption Spectra and Bandgap Scaling in Direct-Gap Semiconductors
Authors:
Sepehr Benis,
Claudiu M. Cirloganu,
Nicholas Cox,
Trenton Ensley,
Honghua Hu,
Gero Nootz,
Peter D. Olszak,
Lazaro A. Padilha,
Davorin Peceli,
Matthew Reichert,
Scott Webster,
Milton Woodall,
David J. Hagan,
Eric W. Van Stryland
Abstract:
This paper presents three-photon absorption (3PA) measurement results for nine direct-gap semiconductors, including full 3PA spectra for ZnSe, ZnS, and GaAs. These results, along with our theory of 3PA using an 8-band Kane model (4 bands with double spin degeneracy), help to explain the significant disagreements between experiments and theory in the literature to date. 3PA in the 8-band model exhi…
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This paper presents three-photon absorption (3PA) measurement results for nine direct-gap semiconductors, including full 3PA spectra for ZnSe, ZnS, and GaAs. These results, along with our theory of 3PA using an 8-band Kane model (4 bands with double spin degeneracy), help to explain the significant disagreements between experiments and theory in the literature to date. 3PA in the 8-band model exhibits quantum interference between the various possible pathways that is not observed in previous 2-band theories. We present measurements of degenerate 3PA coefficients in InSb, GaAs, CdTe, CdSe, ZnTe, CdS, ZnSe, ZnO, and ZnS. We examine bandgap, Eg, scaling using 2-band tunneling and perturbation theories that show agreement with the predicted Eg^-7 dependence; however, For those semiconductors for which we measured full 3PA spectra, we observe significant discrepancies with both 2-band theories. On the other hand, our 8-band model shows excellent agreement with the spectral data. We then use our 8-band theory to predict the 3PA spectra for 15 different semiconductors in their zincblende form. These results allow prediction and interpretation of the 3PA coefficients for various narrow to wide bandgap semiconductors.
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Submitted 12 May, 2020;
originally announced May 2020.
In-situ grown single crystal aluminum as a non-alloyed ohmic contact to n-ZnSe by molecular beam epitaxy (MBE)
Authors:
Zongjian Fan,
Ryan Bunk,
Guangying Wang,
Jerry M. Woodall
Abstract:
Novel ohmic contacts to n-ZnSe are demonstrated using single crystal Al films deposited on epitaxially grown ZnSe (100) by molecular beam epitaxy (MBE). Electron Backscatter Diffraction (EBSD) confirmed the single crystalline structure of the Al films. The (110)-oriented Al layer was rotated rotated 45$^\circ$ relative to substrate to match the ZnSe (100) lattice constant. The as-grown Al-ZnSe con…
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Novel ohmic contacts to n-ZnSe are demonstrated using single crystal Al films deposited on epitaxially grown ZnSe (100) by molecular beam epitaxy (MBE). Electron Backscatter Diffraction (EBSD) confirmed the single crystalline structure of the Al films. The (110)-oriented Al layer was rotated rotated 45$^\circ$ relative to substrate to match the ZnSe (100) lattice constant. The as-grown Al-ZnSe contact exhibited nearly ideal ohmic characteristics over a large do** range of n-ZnSe without any additional treatment. The contact resistances are in a range of 10$^{-3}$ $Ω$-cm$^{2}$ for even lightly doped ZnSe ($\sim$10$^{17}$ cm$^{-3}$). Leaky Schottky behavior in lightly doped ZnSe samples suggested Al-ZnSe formed a low barrier height, Schottky limit contact. In-situ grown Al could act as a simple metal contact to n-ZnSe regardless of carrier concentration with lower resistance compared to other reported contacts in literatures. The reported novel metallization method could greatly simplify the ZnSe-based device fabrication complexity as well as lower the cost
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Submitted 21 May, 2020; v1 submitted 31 March, 2020;
originally announced March 2020.
