Showing 1–21 of 21 results for author: Witzens, J

Silicon Nitride C-Band Grating Coupler with Reduced Waveguide Back-Reflection Using Adaptively Corrected Elliptical Grates

Authors: Ibrahim Ghannam, Florian Merget, Jeremy Witzens

Abstract: We present experimental results for a fully etched C-band grating coupler with reduced back reflection fabricated in an 800 nm silicon nitride platform. Back-reflections are reduced by symmetrically interrupting the first few grates around the center axis of the propagating light. The span of the etched grates is gradually increased until they cover the full width. By interrupting the grates, ligh… ▽ More We present experimental results for a fully etched C-band grating coupler with reduced back reflection fabricated in an 800 nm silicon nitride platform. Back-reflections are reduced by symmetrically interrupting the first few grates around the center axis of the propagating light. The span of the etched grates is gradually increased until they cover the full width. By interrupting the grates, light is reflected back obliquely, which leads to the excitation of higher-order modes that are scattered out of the structure. While this approach has been previously shown in silicon, it comes with a significant penalty in coupling efficiency of around 2.4 dB of extra loss in the layer stack investigated here. In this work, we present the design and measurement results of a grating coupler in which waveguide-to-waveguide back-reflections are suppressed by ~10 dB with this technique, while at the same time mitigating excess insertion losses by resha** the grates as ellipses of varying eccentricity. This helps to compensate the phase front error induced by the interruption of the grates. This correction does not affect the level by which the back-reflection is suppressed, but reduces the insertion loss penalty from 2.4 dB to 1 dB. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Journal ref: The 25th European Conference on Integrated Optics, Springer Proceedings in Physics 402, pp. 571-578, 2024

Focusing Optical Phased Array for Optically Enabled Probing of the Retina with Subcellular Resolution

Authors: Pedram Hosseini, Prachi Agrawal, Alireza Tabatabaei Mashayekh, Sandra Johnen, Jeremy Witzens, Florian Merget

Abstract: We present a silicon-nitride-based optical phased array with built-in focusing and steering capability, that operates at 522 nm and is aimed at complementing a micro-electrode array for joint electrical and optical probing of retinal tissue. It achieves subcellular resolution with a beam diameter of 1.4 um at a focal point located above the chip. Targeted cellular excitation can be achieved by ste… ▽ More We present a silicon-nitride-based optical phased array with built-in focusing and steering capability, that operates at 522 nm and is aimed at complementing a micro-electrode array for joint electrical and optical probing of retinal tissue. It achieves subcellular resolution with a beam diameter of 1.4 um at a focal point located above the chip. Targeted cellular excitation can be achieved by steering the beam through a combination of wavelength tuning and simplified thermo-optical phase shifters with a single electrical input for each of transverse beam steering and selection of the focal plane. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Journal ref: The 25th European Conference on Integrated Optics, Springer Proceedings in Physics 402, pp. 168-175, 2024

External Cavity 637-nm Laser with Increased RSOA-to-PIC Alignment Tolerance and a Filtered Sagnac-Loop Reflector with Single Output Waveguide

Authors: Georgios Sinatkas, Arijit Misra, Florian Merget, Jeremy Witzens

Abstract: The design of a 637-nm wavelength, photonic-integrated-circuit-based external cavity laser (PIC-based ECL) aimed at quantum technology applications is presented together with first experimental results. The PIC is designed to provide relaxed alignment tolerance for coupling to a reflective semiconductor optical amplifier (RSOA) gain chip. This is achieved by using a multi-mode edge coupler (MMEC)… ▽ More The design of a 637-nm wavelength, photonic-integrated-circuit-based external cavity laser (PIC-based ECL) aimed at quantum technology applications is presented together with first experimental results. The PIC is designed to provide relaxed alignment tolerance for coupling to a reflective semiconductor optical amplifier (RSOA) gain chip. This is achieved by using a multi-mode edge coupler (MMEC) in place of the usually employed single-mode coupling schemes. A 1-dB-penalty misalignment tolerance of up to +/- 2.4 um can be achieved in the plane of the chip, creating a path towards reliable flip-chip integration at short wavelengths. The power coupled to the PIC is fed to a Sagnac-loop reflector, filtered by a pair of ring resonators operated in Vernier configuration for providing the required frequency selective optical feedback. The ring resonators are designed to have different loaded Q-factors and they are asymmetrically coupled to bus and drop waveguides with suitably engineered directional couplers to provide single output waveguide emission. Moreover, requirements for high output power and narrow linewidths are balanced. Finally, preliminary measurements strongly suggest lasing in the fabricated devices, with further performance optimization being currently carried out. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Journal ref: The 25th European Conference on Integrated Optics, Springer Proceedings in Physics 402, pp. 8-16, 2024

An efficient singlet-triplet spin qubit to fiber interface assisted by a photonic crystal cavity

Authors: Kui Wu, Sebastian Kindel, Thomas Descamps, Tobias Hangleiter, Jan Christoph Müller, Rebecca Rodrigo, Florian Merget, Hendrik Bluhm, Jeremy Witzens

Abstract: We introduce a novel optical interface between a singlet-triplet spin qubit and a photonic qubit which would offer new prospects for future quantum communication applications. The interface is based on a 220 nm thick GaAs/Al-GaAs heterostructure membrane and features a gate-defined singlet-triplet qubit, a gate-defined optically active quantum dot, a photonic crystal cavity and a bot-tom gold refl… ▽ More We introduce a novel optical interface between a singlet-triplet spin qubit and a photonic qubit which would offer new prospects for future quantum communication applications. The interface is based on a 220 nm thick GaAs/Al-GaAs heterostructure membrane and features a gate-defined singlet-triplet qubit, a gate-defined optically active quantum dot, a photonic crystal cavity and a bot-tom gold reflector. All essential components can be lithographically defined and deterministically fabricated, which greatly increases the scalability of on-chip in-tegration. According to our FDTD simulations, the interface provides an overall coupling efficiency of 28.7% into a free space Gaussian beam, assuming an SiO2 interlayer filling the space between the reflector and the membrane. The performance can be further increased to 48.5% by undercutting this SiO2 interlayer below the photonic crystal. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Journal ref: The 25th European Conference on Integrated Optics, Springer Proceedings in Physics 402, pp. 365-372, 2024

Modeling of an efficient singlet-triplet spin qubit to photon interface assisted by a photonic crystal cavity

Authors: Kui Wu, Sebastian Kindel, Thomas Descamps, Tobias Hangleiter, Jan Christoph Müller, Rebecca Rodrigo, Florian Merget, Hendrik Bluhm, Jeremy Witzens

Abstract: Efficient interconnection between distant semiconductor spin qubits with the help of photonic qubits would offer exciting new prospects for future quantum communication applications. In this paper, we optimize the extraction efficiency of a novel interface between a singlet-triplet spin qubit and a photonic qubit. The interface is based on a 220 nm thick GaAs/AlGaAs heterostructure membrane and co… ▽ More Efficient interconnection between distant semiconductor spin qubits with the help of photonic qubits would offer exciting new prospects for future quantum communication applications. In this paper, we optimize the extraction efficiency of a novel interface between a singlet-triplet spin qubit and a photonic qubit. The interface is based on a 220 nm thick GaAs/AlGaAs heterostructure membrane and consists of a gate-defined double quantum dot (GDQD) supporting a singlet-triplet qubit, an optically active quantum dot (OAQD) consisting of a gate-defined exciton trap, a photonic crystal cavity providing in-plane optical confinement and efficient out-coupling to an ideal free space Gaussian beam while accommodating the gate wiring of the GDQD and OAQD, and a bottom gold reflector to recycle photons and increase the optical extraction efficiency. All essential components can be lithographically defined and deterministically fabricated on the GaAs/AlGaAs heterostructure membrane, which greatly increases the scalability of on-chip integration. According to our simulations, the interface provides an overall coupling efficiency of 28.7% into a free space Gaussian beam, assuming an SiO2 interlayer filling the space between the reflector and the membrane. The performance can be further increased by undercutting this SiO2 interlayer below the photonic crystal. In this case, the overall efficiency is calculated to be 48.5%. △ Less

Submitted 28 October, 2023; originally announced October 2023.

Chip-to-chip ODDM network with optically enabled equalization

Authors: Andrea Zazzi, Jeremy Witzens

Abstract: We propose and model an optical communication scheme for short distance datacom links based on the distribution of information across a wide comb spectrum. This modulation format, orthogonal delay division multiplexing, allows the multiplexing of data streams from multiple modulators, as well as the deserialization and equalization of the data in the optical domain. A concrete communication system… ▽ More We propose and model an optical communication scheme for short distance datacom links based on the distribution of information across a wide comb spectrum. This modulation format, orthogonal delay division multiplexing, allows the multiplexing of data streams from multiple modulators, as well as the deserialization and equalization of the data in the optical domain. A concrete communication system, that allows the transport of 400 Gb/s across a single CWDM channel with a single 80 GHz cutoff lithium niobate on insulator modulator, is modeled under consideration of all noise sources present in the system and its sensitivity to group velocity dispersion is analyzed. Data is deserialized and equalized at the receiver with a 5-tap optical equalizer. This communication architecture may provide a path forward to implement high-baud-rate signaling in short-reach optical links without requiring high-speed ADCs and electronic deserializers at the receiver, thus maintaining the in-package power consumption at manageable levels. △ Less

Submitted 26 October, 2023; originally announced October 2023.

Scalable orthogonal delay-division multiplexed OEO artificial neural network trained for TI-ADC equalization

Authors: Andrea Zazzi, Arka Dipta Das, Lukas Hüssen, Renato Negra, Jeremy Witzens

Abstract: We propose a new signaling scheme for on-chip optical-electrical-optical artificial neural networks that utilizes orthogonal delay-division multiplexing and pilot-tone based self-homodyne detection. This scheme offers a more efficient scaling of the optical power budget with increasing network complexity. Our simulations, based on a 220 nm SOI silicon photonics technology, suggest that the network… ▽ More We propose a new signaling scheme for on-chip optical-electrical-optical artificial neural networks that utilizes orthogonal delay-division multiplexing and pilot-tone based self-homodyne detection. This scheme offers a more efficient scaling of the optical power budget with increasing network complexity. Our simulations, based on a 220 nm SOI silicon photonics technology, suggest that the network can support 31 x 31 neurons, with 961 links and freely programmable weights, using a single 500 mW optical comb and an SNR of 21.3 dB per neuron. Moreover, it features a low sensitivity to temperature fluctuations, ensuring that it can be operated outside of a laboratory environment. We demonstrate the network's effectiveness in nonlinear equalization tasks by training it to equalize a time-interleaved ADC architecture, achieving an ENOB over 4 over the entire 75 GHz ADC bandwidth. We anticipate that this network architecture will enable broadband and low latency nonlinear signal processing in practical settings such as ultra-broadband data converters and real-time control systems. △ Less

Submitted 19 October, 2023; v1 submitted 10 May, 2023; originally announced May 2023.

Silicon Nitride External Cavity Laser with Alignment Tolerant Multi-Mode RSOA-to-PIC Interface

Authors: Ibrahim Ghannam, Bin Shen, Florian Merget, Jeremy Witzens

Abstract: We demonstrate an external cavity laser formed by combining a silicon nitride photonic integrated circuit with a reflective semiconductor optical amplifier. The laser uses an alignment tolerant edge coupler formed by a multi-mode waveguide splitter right at the edge of the silicon nitride chip that relaxes the required alignment to the III-V gain chip and equally splits the power among its two out… ▽ More We demonstrate an external cavity laser formed by combining a silicon nitride photonic integrated circuit with a reflective semiconductor optical amplifier. The laser uses an alignment tolerant edge coupler formed by a multi-mode waveguide splitter right at the edge of the silicon nitride chip that relaxes the required alignment to the III-V gain chip and equally splits the power among its two output waveguides. Both the ground and first order mode are excited in the coupler and reach the quadrature condition at the waveguide junction, ensuring equal power to be coupled to both. Two high-quality-factor ring resonators arranged in Vernier configuration close a Sagnac loop between the two waveguides. In addition to wideband frequency tuning, they result in a longer effective cavity length. The alignment tolerant coupler increases the alignment tolerance in the two directions parallel to the chip surface by a factor 3 relative to conventional edge couplers, making it ideal for gain chip integration via pick-and-place technology. Lasing is maintained in a misalignment range of $\pm$6 $μ$m in the direction along the edge of the chip. A Lorentzian laser linewidth of 42 kHz is achieved. △ Less

Submitted 1 July, 2021; originally announced July 2021.

Photonic integrated circuits for life sciences

Authors: Jeremy Witzens, Patrick Leisching, Alireza T. Mashayekh, Thomas Klos, Sina Koch, Florian Merget, Douwe Geuzebroek, Edwin Klein, Theo Veenstra, Ronald Dekker

Abstract: We report on the use of silicon nitride (SiN) photonic integrated circuits (PICs) in high-value instrumentation, namely multi-color laser engines (MLEs), a core element of cutting-edge biophotonic systems applied to confocal microscopy, fluorescent microscopy - including super-resolution stimulated emission depletion (STED) microscopy - flow cytometry, optogenetics, genetic analysis and DNA sequen… ▽ More We report on the use of silicon nitride (SiN) photonic integrated circuits (PICs) in high-value instrumentation, namely multi-color laser engines (MLEs), a core element of cutting-edge biophotonic systems applied to confocal microscopy, fluorescent microscopy - including super-resolution stimulated emission depletion (STED) microscopy - flow cytometry, optogenetics, genetic analysis and DNA sequencing, to name just a few. These have in common the selective optical excitation of molecules - fluorophores, or, in the case of optogenetics, light-gated ion channels - with laser radiation falling within their absorption spectrum. Unambiguous identification of molecules or cellular subsets often requires jointly analyzing fluorescent signals from several fluorescent markers, so that MLEs are required to provide excitation wavelengths for several commercially available biocompatible fluorophores. A number of functionalities are required from MLEs in addition to sourcing the required wavelengths: Variable attenuation and/or digital intensity modulation in the Hz to kHz range are required for a number of applications such as optical trap**, lifetime imaging, or fluorescence recovery after photobleaching (FRAP). Moreover, switching of the laser between two fiber outputs can be utilized for example to switch between scanning confocal microscopy and widefield illumination modes, for instance, for conventional fluorescence imaging. △ Less

Submitted 15 December, 2020; originally announced January 2021.

Journal ref: laser + photonics 2020, pp. 24-29

Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors

Authors: Oussama Moutanabbir, Simone Assali, Xiao Gong, Eoin O'Reilly, Chris Broderick, Bahareh Marzban, Jeremy Witzens, Wei Du, Shui-Qing Yu, Alexei Chelnokov, Dan Buca, Donguk Nam

Abstract: (Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real possibility. Notwithstanding the recent exciting developments in (Si)GeSn materials and devices, this family of semiconductors is still facing seriou… ▽ More (Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real possibility. Notwithstanding the recent exciting developments in (Si)GeSn materials and devices, this family of semiconductors is still facing serious limitations that need to be addressed to enable reliable and scalable applications. The main outstanding challenges include the difficulty to grow high crystalline quality layers and heterostructures at the desired Sn content and lattice strain, preserve the material integrity during growth and throughout device processing steps, and control do** and defect density. Other challenges are related to the lack of optimized device designs and predictive theoretical models to evaluate and simulate the fundamental properties and performance of (Si)GeSn layers and heterostructures. This Perspective highlights key strategies to circumvent these hurdles and bring this material system to maturity to create far-reaching new opportunities for Si-compatible infrared photodetectors, sensors, and emitters for applications in free-space communication, infrared harvesting, biological and chemical sensing, and thermal imaging. △ Less

Submitted 8 January, 2021; originally announced January 2021.

Design of a waveguide-coupled GeSn disk laser

Authors: Bahareh Marzban, Jovana Nojic, Daniela Stange, Dan Buca, Jeremy Witzens

Abstract: We report on the design of a waveguide coupled GeSn microdisk-laser cavity in which the germanium virtual substrate serving as a template for GeSn growth is repurposed for the definition of passive on-chip interconnection waveguides. A main challenge resides in transferring the optical power from the upper (Si)GeSn gain stack to the underlying virtual substrate layer and is solved with laser mode… ▽ More We report on the design of a waveguide coupled GeSn microdisk-laser cavity in which the germanium virtual substrate serving as a template for GeSn growth is repurposed for the definition of passive on-chip interconnection waveguides. A main challenge resides in transferring the optical power from the upper (Si)GeSn gain stack to the underlying virtual substrate layer and is solved with laser mode engineering. Designs are based on experimentally realized layer stacks and waveguide outcoupling efficiencies as high as 27% are shown in compact resonator geometries with a small, 7 $μ$m radius, with 42% of the power being recycled in the laser cavity. △ Less

Submitted 13 May, 2020; originally announced June 2020.

Journal ref: in Proc. 2020 IEEE Photon. Soc. Sum. Top. Meet. (SUM)

Silicon Photonics DWDM NLFT Soliton Transmitter

Authors: Jonas Koch, Alvaro Moscoso-Mártir, Juliana Müller, Florian Merget, Stephan Pachnicke, Jeremy Witzens

Abstract: We investigate the transmission of densely multiplexed solitons using a photonic integrated chip and the nonlinear Fourier-transform and analyze required launch conditions, the effect of (de-)multiplexing and noise on the nonlinear spectrum, and equalization techniques that can be used to enhance the transmission performance. We investigate the transmission of densely multiplexed solitons using a photonic integrated chip and the nonlinear Fourier-transform and analyze required launch conditions, the effect of (de-)multiplexing and noise on the nonlinear spectrum, and equalization techniques that can be used to enhance the transmission performance. △ Less

Submitted 7 April, 2020; originally announced April 2020.

Journal ref: in Proc. 21th ITG-Symposium on Photonic Networks, pp. 93-100, Nov. 2020

Semiconductor laser mode locking stabilization with optical feedback from a silicon PIC

Authors: Johannes Hauck, Andrea Zazzi, Alexandre Garreau, François Lelarge, Alvaro Moscoso-Mártir, Florian Merget, Jeremy Witzens

Abstract: Semiconductor mode-locked lasers can be used in a variety of applications ranging from multi-carrier sources for WDM communication systems to time base references for metrology. Their packaging in compact chip- or module-level systems remains however burdened by their strong sensitivity to back-reflections, quickly destroying the coherence of the mode-locking. Here, we investigate the stabilizatio… ▽ More Semiconductor mode-locked lasers can be used in a variety of applications ranging from multi-carrier sources for WDM communication systems to time base references for metrology. Their packaging in compact chip- or module-level systems remains however burdened by their strong sensitivity to back-reflections, quickly destroying the coherence of the mode-locking. Here, we investigate the stabilization of mode-locked lasers directly edge coupled to a silicon photonic integrated circuit, with the objective of moving isolators downstream to the output of the photonic circuit. A 2.77 kHz 3 dB RF linewidth, substantially improved compared to the 15.01 kHz of the free running laser, is obtained in the best case. Even in presence of detrimental reflections from the photonic circuit, substantial linewidth reductions from 20 kHz to 8.82 kHz, from 572 kHz to 14.8 kHz, and from 1.5 MHz to 40 kHz are realized. △ Less

Submitted 14 May, 2019; v1 submitted 30 October, 2018; originally announced December 2018.

Broadband, Temperature Tolerant and Passively Biased Resonantly Enhanced Mach-Zehnder Modulators

Authors: S. Romero-García, A. Moscoso-Mártir, J. Nojic, S. Sharif-Azadeh, J. Müller, B. Shen, F. Merget, J. Witzens

Abstract: We describe a resonantly enhanced Mach-Zehnder modulator (MZM) that can be operated over a wide temperature range of 55C without being actively biased, while providing a significant resonant enhancement of 6.8 at the nominal wavelength / temperature compared to a linear MZM driven with a distributed driver. More importantly, it enables a ~20X improvement in power consumption compared to a 50 Ω mat… ▽ More We describe a resonantly enhanced Mach-Zehnder modulator (MZM) that can be operated over a wide temperature range of 55C without being actively biased, while providing a significant resonant enhancement of 6.8 at the nominal wavelength / temperature compared to a linear MZM driven with a distributed driver. More importantly, it enables a ~20X improvement in power consumption compared to a 50 Ω matched linear traveling wave modulator with comparable phase shifter technology, drive voltage and output optical modulation amplitude. Passive biasing of the Mach-Zehnder interferometer is further implemented by replacing a splitter element in the MZM with a novel device combining splitting and fiber coupling functionalities in a single, multi-modal structure, that converts permanent fiber placement into a phase correction. Both concepts are combined in a single modulator device, removing the need for any type of active control in a wide temperature operation range. △ Less

Submitted 31 October, 2018; originally announced December 2018.

Comments: Proc. 2018 Int. IEEE Conf. on Nano/Micro Engineered and Molecular Systems (NEMS 2018)

Stabilization and frequency control of a DFB laser with a tunable optical reflector integrated in a Silicon Photonics PIC

Authors: Johannes Hauck, Matthias Schrammen, Sebastían Romero-García, Juliana Müller, Bin Shen, Jens Richter, Florian Merget, Jeremy Witzens

Abstract: We investigate the effect of tunable optical feedback on a commercial DFB laser edge coupled to a Silicon Photonics planar integrated circuit in which a tunable reflector has been implemented by means of a ring resonator based add-drop multiplexer. Controlled optical feedback allows for fine-tuning of the laser oscillation frequency. Under certain conditions it also allows suppression of bifurcati… ▽ More We investigate the effect of tunable optical feedback on a commercial DFB laser edge coupled to a Silicon Photonics planar integrated circuit in which a tunable reflector has been implemented by means of a ring resonator based add-drop multiplexer. Controlled optical feedback allows for fine-tuning of the laser oscillation frequency. Under certain conditions it also allows suppression of bifurcation modes triggered by reflections occurring elsewhere on the chip. A semi-analytical model describing laser dynamics under combined optical feedback from the input facet of the edge coupler and from the tunable on-chip reflector fits the measurements. Compensation of detrimental effects from reflections induced elsewhere on a transceiver chip may allow moving isolators downstream in future communications systems, facilitating direct hybrid laser integration in Silicon Photonics chips, provided a suitable feedback signal for a control system can be identified. Moreover, the optical frequency tuning at lower feedback levels can be used to form a rapidly tunable optical oscillator as part of an optical phase locked loop, circumventing the problem of the thermal to free carrier effect crossover in the FM response of injection current controlled semiconductor laser diodes. △ Less

Submitted 28 July, 2016; originally announced July 2016.

Silicon Photonics WDM Transceiver with SOA and Semiconductor Mode-Locked Laser

Authors: Alvaro Moscoso-Mártir, Juliana Müller, Johannes Hauck, Nicolas Chimot, Rony Setter, Avner Badihi, Daniel E. Rasmussen, Alexandre Garreau, Mads Nielsen, Elmira Islamova, Sebastián Romero-García, Bin Shen, Anna Sandomirsky, Sylvie Rockman, Chao Li, Saeed Sharif Azadeh, Guo-Qiang Lo, Elad Mentovich, Florian Merget, François Lelarge, Jeremy Witzens

Abstract: We demonstrate a complete Silicon Photonics WDM link relying on a single section semiconductor mode-locked laser and a single SOA to support up to 12 multiplexed channels with a bit error rate of 1e-12 at serial data rates of 14 Gbps without channel pre-emphasis, equalization or forward error correction. Individual channels reach error free operation at 25 Gbps and multi-channel operation at 25 Gb… ▽ More We demonstrate a complete Silicon Photonics WDM link relying on a single section semiconductor mode-locked laser and a single SOA to support up to 12 multiplexed channels with a bit error rate of 1e-12 at serial data rates of 14 Gbps without channel pre-emphasis, equalization or forward error correction. Individual channels reach error free operation at 25 Gbps and multi-channel operation at 25 Gbps is shown to be compatible with standard 7% overhead hard decision forward error correction. Silicon Photonics transmitter and receiver chips are hybridly integrated with driver and receiver electronics. A detailed link model is derived and verified. Particular emphasis is placed on accurate system level modeling of laser RIN, SOA amplified spontaneous emission noise and receiver noise. The impact of the electrical receiver bandwidth and non-Gaussian statistics on level dependent amplified spontaneous emission noise are investigated in detail. The channel count scalability as limited by SOA saturation is further analyzed taking cross gain modulation and four wave mixing into account. While semiconductor mode-locked lasers have been identified as a potential light source for low cost Datacom WDM transceivers for some time, this is, to the best of our knowledge, the first comprehensive investigation of the overall link budget in a Silicon Photonics implementation showing this technology to be a credible contender for low latency datacenter interconnects. △ Less

Submitted 27 May, 2016; originally announced May 2016.

Journal ref: A. Moscoso-Mártir et al., "Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser," Sci. Rep., vol. 7, no. 1, Art. ID 13857, 2017

Effect of Electrical Filtering on Level Dependent ASE Noise

Authors: Jeremy Witzens

Abstract: We derive an analytical model describing the effect of filtering on amplified spontaneous emission noise during or after opto-electronic conversion. In particular, we show that electrical filtering results in a further reduction of the signal quality factor associated with an effective increase of the noise levels and can lead to counter-intuitive dependencies of the measured signal quality on the… ▽ More We derive an analytical model describing the effect of filtering on amplified spontaneous emission noise during or after opto-electronic conversion. In particular, we show that electrical filtering results in a further reduction of the signal quality factor associated with an effective increase of the noise levels and can lead to counter-intuitive dependencies of the measured signal quality on the characteristics of the test setup. Closed form equations are compared with numerical models and experiments, showing excellent agreement. △ Less

Submitted 10 May, 2016; originally announced May 2016.

Journal ref: J. Witzens et al., "Modification of Level Dependent ASE-Signal Beat Noise by Optical and Electrical Filtering in Optically Preamplified Direct Detection Receivers," IEEE Photonics J., vol. 10, no. 1, Art. ID 7500416, 2018

High Speed WDM Interconnect Using Silicon Photonics Ring Modulators and Mode-Locked Laser

Authors: Juliana Müller, Johannes Hauck, Alvaro Moscoso-Mártir, Nicolas Chimot, Sebastian Romero-García, Bin Shen, Florian Merget, François Lelarge, Jeremy Witzens

Abstract: We demonstrate an 8 by 14 Gbps compatible WDM link based on a single-section semiconductor mode-locked laser, silicon photonics resonant ring modulators and joint channel reamplification with a semiconductor optical amplifier operated in the linear regime. Individual channels reach a data rate of 25 Gbps with signal quality-factors above 7. We demonstrate an 8 by 14 Gbps compatible WDM link based on a single-section semiconductor mode-locked laser, silicon photonics resonant ring modulators and joint channel reamplification with a semiconductor optical amplifier operated in the linear regime. Individual channels reach a data rate of 25 Gbps with signal quality-factors above 7. △ Less

Submitted 26 October, 2015; originally announced October 2015.

Journal ref: Proc. Europ. Conf. Opt. Comm. (ECOC), Sept. 27-Oct. 1st, 2015

Monolithically integrated waveguide-coupled silica microtoroids

Authors: Jens Richter, Maziar Pourabdollah Nezhad, Jeremy Witzens

Abstract: We report on the design and fabrication of a new type of microtoroid high-Q silica resonators monolithically coupled to on-chip silicon nanowire waveguides. In order to enable monolithic waveguide coupling, the microtoroid geometry is inverted such that the resonator is formed by thermal reflow at the circumference of a hole etched in a suspended SiO2 membrane. This configuration is shown to be co… ▽ More We report on the design and fabrication of a new type of microtoroid high-Q silica resonators monolithically coupled to on-chip silicon nanowire waveguides. In order to enable monolithic waveguide coupling, the microtoroid geometry is inverted such that the resonator is formed by thermal reflow at the circumference of a hole etched in a suspended SiO2 membrane. This configuration is shown to be conducive to integration with a fully functional Silicon Photonics technology platform. △ Less

Submitted 26 October, 2015; originally announced October 2015.

Journal ref: Proc. Opto-Electron. Comm. Conf. (OECC), June 28-July 2nd, 2015

High frequency electro-optic measurement of strained silicon racetrack resonators

Authors: M. Borghi, M. Mancinelli, F. Merget, J. Witzens, M. Bernard, M. Ghulinyan, G. Pucker, L. Pavesi

Abstract: The observation of the electro-optic effect in strained silicon waveguides has been considered as a direct manifestation of an induced $χ^{(2)}$ non-linearity in the material. In this work, we perform high frequency measurements on strained silicon racetrack resonators. Strain is controlled by a mechanical deformation of the waveguide. It is shown that any optical modulation vanishes independently… ▽ More The observation of the electro-optic effect in strained silicon waveguides has been considered as a direct manifestation of an induced $χ^{(2)}$ non-linearity in the material. In this work, we perform high frequency measurements on strained silicon racetrack resonators. Strain is controlled by a mechanical deformation of the waveguide. It is shown that any optical modulation vanishes independently of the applied strain when the applied voltage varies much faster than the carrier effective lifetime, and that the DC modulation is also largely independent of the applied strain. This demonstrates that plasma carrier dispersion is responsible for the observed electro-optic effect. After normalizing out free carrier effects, our results set an upper limit of $8\,pm/V$ to the induced high-speed $χ^{(2)}_{eff,zzz}$ tensor element at an applied stress of $-0.5\,GPa$. This upper limit is about one order of magnitude lower than the previously reported values for static electro-optic measurements. △ Less

Submitted 17 September, 2015; originally announced September 2015.

Edge Couplers with relaxed Alignment Tolerance for Pick-and-Place Hybrid Integration of III-V Lasers with SOI Waveguides

Authors: Sebastian Romero-García, Bahareh Marzban, Florian Merget, Bin Shen, Jeremy Witzens

Abstract: We report on two edge-coupling and power splitting devices for hybrid integration of III-V lasers with sub-micrometric silicon-on-insulator (SOI) waveguides. The proposed devices relax the horizontal alignment tolerances required to achieve high coupling efficiencies and are suitable for passively aligned assembly with pick-and-place tools. Light is coupled to two on-chip single mode SOI waveguide… ▽ More We report on two edge-coupling and power splitting devices for hybrid integration of III-V lasers with sub-micrometric silicon-on-insulator (SOI) waveguides. The proposed devices relax the horizontal alignment tolerances required to achieve high coupling efficiencies and are suitable for passively aligned assembly with pick-and-place tools. Light is coupled to two on-chip single mode SOI waveguides with almost identical power coupling efficiency, but with a varying relative phase accommodating the lateral misalignment between the laser diode and the coupling devices, and is suitable for the implementation of parallel optics transmitters. Experimental characterization with both a lensed fiber and a Fabry-Pérot semiconductor laser diode has been performed. Excess insertion losses (in addition to the 3 dB splitting) taken as the worst case over both waveguides of respectively 2 dB and 3.1 dB, as well as excellent 1 dB horizontal loss misalignment ranges of respectively 2.8 um and 3.8 um (worst case over both in-plane axes) have been measured for the two devices. Back-reflections to the laser are below -20 dB for both devices within the 1 dB misalignment range. Devices were fabricated with 193 nm DUV optical lithography and are compatible with mass-manufacturing with mainstream CMOS technology. △ Less

Submitted 6 October, 2013; originally announced October 2013.

Journal ref: J. Sel. Top. Quant. Elect., vol. 20 issue 4, 2014