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Revisiting Thin Silicon for Photovoltaics: A Technoeconomic Perspective
Authors:
Zhe Liu,
Sarah E. Sofia,
Hannu S. Laine,
Michael Woodhouse,
Sarah Wieghold,
Ian Marius Peters,
Tonio Buonassisi
Abstract:
Adopting thin Si wafers for PV reduces capital expenditure (capex) and manufacturing cost, and accelerates the growth of PV manufacturing. There are two key questions about thin Si today: (a) how much can we still benefit economically from thinning wafers? (b) what are the technological challenges to transition to thin wafers? In this work, we re-evaluate the benefits and challenges of thin Si for…
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Adopting thin Si wafers for PV reduces capital expenditure (capex) and manufacturing cost, and accelerates the growth of PV manufacturing. There are two key questions about thin Si today: (a) how much can we still benefit economically from thinning wafers? (b) what are the technological challenges to transition to thin wafers? In this work, we re-evaluate the benefits and challenges of thin Si for current and future PV modules using a comprehensive techno-economic framework that couples device simulation, bottom-up cost modeling, and a cash-flow growth model. When adopting an advanced technology concept that features sufficiently good surface passivation, similarly high efficiencies are achievable for 50-um wafers as for 160-um ones. We then quantify the economic benefits for thin Si wafers in terms of poly-Si-to-module manufacturing capex, module cost, and levelized cost of electricity (LCOE) for utility PV systems. Particularly, LCOE favors thinner wafers for all investigated device architectures, and can potentially be reduced by more than 5% from the value of 160-um wafers. With further improvements in module efficiency, an advanced thin-wafer device concept with 50-um wafers could reduce manufacturing capex by 48%, module cost by 28%, and LCOE by 24%. Furthermore, we apply a sustainable growth model to investigate PV deployment scenarios in 2030. It is found that the state-of-the-art industry concept could not achieve the climate targets even with very aggressive financial scenarios, therefore the capex reduction benefit of thin wafers is needed to facilitate more rapid PV growth. Lastly, we discuss the remaining technological challenges and areas for innovation to enable high-yield manufacturing of high-efficiency PV modules with thin Si wafers.
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Submitted 24 October, 2019; v1 submitted 16 June, 2019;
originally announced June 2019.
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Triplet-sensitization by lead halide perovskite thin films for near-infrared-to-visible upconversion
Authors:
Lea Nienhaus,
Juan-Pablo Correa-Baena,
Sarah Wieghold,
Markus Einzinger,
Ting-An Lin,
Katherine E. Shulenberger,
Nathan D. Klein,
Mengfei Wu,
Vladimir Bulovic,
Tonio Buonassisi,
Marc A. Baldo,
Moungi G. Bawendi
Abstract:
Lead halide-based perovskite thin films have attracted great attention due to the explosive increase in perovskite solar cell efficiencies. The same optoelectronic properties that make perovskites ideal absorber materials in solar cells are also beneficial in other light-harvesting applications and make them prime candidates as triplet sensitizers in upconversion via triplet-triplet annihilation i…
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Lead halide-based perovskite thin films have attracted great attention due to the explosive increase in perovskite solar cell efficiencies. The same optoelectronic properties that make perovskites ideal absorber materials in solar cells are also beneficial in other light-harvesting applications and make them prime candidates as triplet sensitizers in upconversion via triplet-triplet annihilation in rubrene. In this contribution, we take advantage of long carrier lifetimes and carrier diffusion lengths in perovskite thin films, their high absorption cross sections throughout the visible spectrum, as well as the strong spin-orbit coupling owing to the abundance of heavy atoms to sensitize the upconverter rubrene. Employing bulk perovskite thin films as the absorber layer and spin-mixer in inorganic/organic heterojunction upconversion devices allows us to forego the additional tunneling barrier owing from the passivating ligands required for colloidal sensitizers. Our bilayer device exhibits an upconversion efficiency in excess of 3% under 785 nm illumination.
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Submitted 15 February, 2019;
originally announced February 2019.
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Trap states impact photon upconversion in rubrene sensitized by lead halide perovskite thin films
Authors:
Sarah Wieghold,
Alexander S. Bieber,
Zachary A. VanOrman,
Juan-Pablo Correa-Baena,
Lea Nienhaus
Abstract:
The same optical and electronic properties that make perovskite thin films ideal absorber materials in photovoltaic applications are also beneficial in photon upconversion devices. In this contribution, we investigate the rubrene-triplet sensitization by perovskite thin films based on methylammonium formamidinium lead triiodide (MAFA). To elucidate the role of trap states which affect the free car…
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The same optical and electronic properties that make perovskite thin films ideal absorber materials in photovoltaic applications are also beneficial in photon upconversion devices. In this contribution, we investigate the rubrene-triplet sensitization by perovskite thin films based on methylammonium formamidinium lead triiodide (MAFA). To elucidate the role of trap states which affect the free carrier lifetimes, we fabricate MAFA perovskite thin films with three different thicknesses. By measuring the change in the photoluminescence properties under different excitation fluences, we find that the prevalent recombination mechanism shifts from monomolecular for thinner films to bimolecular recombination for thicker MAFA films, indicating a reduction in shallow trap-assisted recombination. The addition of rubrene shows a passivating effect on the MAFA surface, but adds an additional quenching pathway due to charge transfer to the triplet state of rubrene. We observe that the threshold for efficient triplet-triplet annihilation shifts to lower incident powers with increasing MAFA thickness, which suggests that the charge transfer to the triplet state competes with non-radiative trap filling. Hence, injection of free electrons and holes into the upconverting organic semiconductor can provide a new avenue for sensitization of rubrene, and may allow us to move away from the necessity of efficient excitonic singlet-to-triplet converters.
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Submitted 4 February, 2019;
originally announced February 2019.
