Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates
Authors:
Connor P Horn,
Christina Wicker,
Antoni Wellisz,
Cyrus Zeledon,
Pavani Vamsi Krishna Nittala,
F Joseph Heremans,
David D Awschalom,
Supratik Guha
Abstract:
We detail several scientific and engineering innovations which enable the controlled spalling of 10 - 50 micron thick films of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an ideal candidate for high-temperature, high-voltage power electronic devices. Moreover, 4H-SiC has been shown to be an ex…
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We detail several scientific and engineering innovations which enable the controlled spalling of 10 - 50 micron thick films of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an ideal candidate for high-temperature, high-voltage power electronic devices. Moreover, 4H-SiC has been shown to be an excellent host of solid-state atomic defect qubits for quantum computing and quantum networking. Because 4H-SiC single crystal substrates are expensive (due to long growth times and limited yield), techniques for removal and transfer of bulk-quality films in the tens-of-microns thickness range are highly desirable to allow for substrate reuse and integration of the separated films. In this work we utilize novel approaches for stressor layer thickness control and spalling crack initiation to demonstrate controlled spalling of 4H-SiC, the highest fracture toughness material spalled to date. Additionally, we demonstrate substrate re-use, bonding of the spalled films to carrier substrates, and explore the spin coherence of the spalled films. In preliminary studies we are able to achieve coherent spin control of neutral divacancy ($VV^{0}$) qubit ensembles and measure a quasi-bulk spin $T_{2}$ of 79.7 $μ$s in such spalled films.
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Submitted 30 June, 2024; v1 submitted 30 April, 2024;
originally announced April 2024.
