Showing 1–4 of 4 results for author: Weiss, J T

Characterization of Chromium Compensated GaAs as an x-ray Sensor Material for Charge-Integrating Pixel Array Detectors

Authors: Julian Becker, Mark W. Tate, Katherine S. Shanks, Hugh T. Philipp, Joel T. Weiss, Prafull Purohit, Darol Chamberlain, Sol M. Gruner

Abstract: We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and x-ray tube energy. The material is a photoresistor and can be biased to collect either electrons or holes by the pixel circuitry. Both are studied here. Previous studies have shown substantial hole trap**. This trap** and other sensor propertie… ▽ More We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and x-ray tube energy. The material is a photoresistor and can be biased to collect either electrons or holes by the pixel circuitry. Both are studied here. Previous studies have shown substantial hole trap**. This trap** and other sensor properties give rise to several non-ideal effects which include an extended point spread function, variations in the effective pixel size, and rate dependent offset shifts. The magnitude of these effects varies with temperature and bias, mandating good temperature uniformity in the sensor and very good temperature stabilization, as well as a carefully selected bias voltage. △ Less

Submitted 21 November, 2017; v1 submitted 7 July, 2017; originally announced July 2017.

Comments: revised version after 2nd peer review

Sub-Microsecond X-Ray Imaging Using Hole-Collecting Schottky type CdTe with Charge-Integrating Pixel Array Detectors

Authors: Julian Becker, Mark W. Tate, Katherine S. Shanks, Hugh T. Philipp, Joel T. Weiss, Prafull Purohit, Darol Chamberlain, Sol M. Gruner

Abstract: CdTe is increasingly being used as the x-ray sensing material in imaging pixel array detectors for x-rays, generally above 20 keV, where silicon sensors become unacceptably transparent. Unfortunately CdTe suffers from polarization, which can alter the response of the material over time and with accumulated dose. Most prior studies used long integration times or CdTe that was not of the hole-collec… ▽ More CdTe is increasingly being used as the x-ray sensing material in imaging pixel array detectors for x-rays, generally above 20 keV, where silicon sensors become unacceptably transparent. Unfortunately CdTe suffers from polarization, which can alter the response of the material over time and with accumulated dose. Most prior studies used long integration times or CdTe that was not of the hole-collecting Schottky type. We investigated the temporal response of hole-collecting Schottky type CdTe sensors on timescales ranging from tens of nanoseconds to several seconds. We found that the material shows signal persistence on the timescale of hundreds of milliseconds attributed to the detrap** of a shallow trap, and additional persistence on sub-microsecond timescales after polarization. The results show that this type of CdTe can be used for time resolved studies down to approximately 100 ns. However quantitative interpretation of the signal requires careful attention to bias voltages, polarization and exposure history. △ Less

Submitted 15 May, 2017; v1 submitted 6 March, 2017; originally announced March 2017.

Comments: revised version after peer-review

High Dynamic Range X-ray Detector Pixel Architectures Utilizing Charge Removal

Authors: Joel T. Weiss, Katherine S. Shanks, Hugh T. Philipp, Julian Becker, Darol Chamberlain, Prafull Purohit, Mark W. Tate, Sol M. Gruner

Abstract: Several charge integrating CMOS pixel front-ends utilizing charge removal techniques have been fabricated to extend dynamic range for x-ray diffraction applications at synchrotron sources and x-ray free electron lasers (XFELs). The pixels described herein build on the Mixed Mode Pixel Array Detector (MM-PAD) framework, developed previously by our group to perform high dynamic range imaging. These… ▽ More Several charge integrating CMOS pixel front-ends utilizing charge removal techniques have been fabricated to extend dynamic range for x-ray diffraction applications at synchrotron sources and x-ray free electron lasers (XFELs). The pixels described herein build on the Mixed Mode Pixel Array Detector (MM-PAD) framework, developed previously by our group to perform high dynamic range imaging. These new pixels boast several orders of magnitude improvement in maximum flux over the MM-PAD, which is capable of measuring a sustained flux in excess of 10$^{8}$ x-rays/pixel/second while maintaining sensitivity to smaller signals, down to single x-rays. To extend dynamic range, charge is removed from the integration node of the front-end amplifier without interrupting integration. The number of times this process occurs is recorded by a digital counter in the pixel. The parameter limiting full well is thereby shifted from the size of an integration capacitor to the depth of a digital counter. The result is similar to that achieved by counting pixel array detectors, but the integrators presented here are designed to tolerate a sustained flux >10$^{11}$ x-rays/pixel/second. Pixel front-end linearity was evaluated by direct current injection and results are presented. A small-scale readout ASIC utilizing these pixel architectures has been fabricated and the use of these architectures to increase single x-ray pulse dynamic range at XFELs is discussed briefly. △ Less

Submitted 28 October, 2016; originally announced October 2016.

Comments: 6 pages, 7 figures

Characterization of CdTe Sensors with Schottky Contacts Coupled to Charge-Integrating Pixel Array Detectors for X-Ray Science

Authors: Julian Becker, Mark W. Tate, Katherine S. Shanks, Hugh T. Philipp, Joel T. Weiss, Prafull Purohit, Darol Chamberlain, Jacob P. C. Ruff, Sol M. Gruner

Abstract: Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we present characterizations of CdTe sensors hybridized with two different charge-integrating readout chips, the Keck PAD and the Mixed… ▽ More Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we present characterizations of CdTe sensors hybridized with two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame, in-pixel storage elements with framing periods $<$150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/pixel/frame while framing at 1 kHz. Both detector chips consist of a 128$\times$128 pixel array with (150 $μ$m)$^2$ pixels. △ Less

Submitted 28 November, 2016; v1 submitted 12 September, 2016; originally announced September 2016.

Comments: Revised version after 2nd peer-review