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Exploring Charge Transport Dynamics in a Cryogenic P-Type Germanium Detector
Authors:
P. Acharya,
M. Fritts,
D. -M. Mei,
G. -J. Wang,
R. Mahapatra,
M. Platt
Abstract:
This study explores the dynamics of charge transport within a cryogenic P-type Ge particle detector, fabricated from a crystal cultivated at the University of South Dakota (USD). By subjecting the detector to cryogenic temperatures and an Am-241 source, we observe evolving charge dynamics and the emergence of cluster dipole states, leading to the impact ionization process at 40 mK. Our analysis fo…
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This study explores the dynamics of charge transport within a cryogenic P-type Ge particle detector, fabricated from a crystal cultivated at the University of South Dakota (USD). By subjecting the detector to cryogenic temperatures and an Am-241 source, we observe evolving charge dynamics and the emergence of cluster dipole states, leading to the impact ionization process at 40 mK. Our analysis focuses on crucial parameters: the zero-field cross-section of cluster dipole states and the binding energy of these states. For the Ge detector in our investigation, the zero-field cross-section of cluster dipole states is determined to be $8.45 \times 10^{-11}\pm 4.22\times 10^{-12}~cm^2$. Examination of the binding energy associated with cluster dipole states, formed by charge trap** onto dipole states during the freeze-out process, reveals a value of $0.034 \pm 0.0017$ meV. These findings shed light on the intricate charge states influenced by the interplay of temperature and electric field, with potential implications for the sensitivity in detecting low-mass dark matter.
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Submitted 28 February, 2024;
originally announced February 2024.
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Observation of Time-Dependent Internal Charge Amplification in a Planar Germanium Detector at Cryogenic Temperature
Authors:
P. Acharya,
M. Fritts,
D. -M. Mei,
V. Mandic,
G. -J. Wang,
R. Mahapatra,
M. Platt
Abstract:
For the first time, time-dependent internal charge amplification through impact ionization has been observed in a planar germanium (Ge) detector operated at cryogenic temperature. In a time period of 30 and 45 minutes after applying a bias voltage, the charge energy corresponding to a baseline of the 59.54 keV $γ$ rays from a $^{241}$Am source is amplified for a short period of time and then decre…
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For the first time, time-dependent internal charge amplification through impact ionization has been observed in a planar germanium (Ge) detector operated at cryogenic temperature. In a time period of 30 and 45 minutes after applying a bias voltage, the charge energy corresponding to a baseline of the 59.54 keV $γ$ rays from a $^{241}$Am source is amplified for a short period of time and then decreases back to the baseline. The amplification of charge energy depends strongly on the applied positive bias voltage with drifting holes across the detector. No such phenomenon is visible with drifting electrons across the detector. We find that the observed charge amplification is dictated by the impact ionization of charged states, which has a strong correlation with impurity level and applied electric field. We analyze the dominant physics mechanisms that are responsible for the creation and the impact ionization of charged states. Our analysis suggests that the appropriate level of impurity in a Ge detector can enhance charge yield through the impact ionization of charged states to achieve extremely low-energy detection threshold ($<$ 10 meV) for MeV-scale dark matter searches if the charge amplification can be stabilized.
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Submitted 15 March, 2023; v1 submitted 29 November, 2022;
originally announced November 2022.
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Experimental realization of a 218-ion multi-qubit quantum memory
Authors:
R. Yao,
W. -Q. Lian,
Y. -K. Wu,
G. -X. Wang,
B. -W. Li,
Q. -X. Mei,
B. -X. Qi,
L. Yao,
Z. -C. Zhou,
L. He,
L. -M. Duan
Abstract:
Storage lifetime and capacity are two important factors to characterize the performance of a quantum memory. Here we report the stable trap** of above 200 ions in a cryogenic setup, and demonstrate the combination of the multi-qubit capacity and long storage lifetime by measuring the coherence time of randomly chosen ions to be on the order of hundreds of milliseconds. We apply composite microwa…
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Storage lifetime and capacity are two important factors to characterize the performance of a quantum memory. Here we report the stable trap** of above 200 ions in a cryogenic setup, and demonstrate the combination of the multi-qubit capacity and long storage lifetime by measuring the coherence time of randomly chosen ions to be on the order of hundreds of milliseconds. We apply composite microwave pulses to manipulate qubit states globally for efficient characterization of different storage units simultaneously, and we compare the performance of the quantum memory with and without the sympathetic cooling laser, thus unambiguously show the necessity of sympathetic cooling for the long-time storage of multiple ionic qubits.
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Submitted 30 September, 2022;
originally announced September 2022.
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Evidence of cluster dipole states in germanium detectors operating at temperatures below 10 K
Authors:
D. -M. Mei,
R. Panth,
K. Kooi,
H. Mei,
S. Bhattarai,
M. Raut,
P. Acharya,
G. -J. Wang
Abstract:
By studying charge trap** in germanium (Ge) detectors operating at temperatures below 10 K, we demonstrate for the first time that the formation of cluster dipole states from residual impurities is responsible for charge trap**. Two planar detectors with different impurity levels and types are used in this study. When drifting the localized charge carriers created by $α$ particles from the top…
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By studying charge trap** in germanium (Ge) detectors operating at temperatures below 10 K, we demonstrate for the first time that the formation of cluster dipole states from residual impurities is responsible for charge trap**. Two planar detectors with different impurity levels and types are used in this study. When drifting the localized charge carriers created by $α$ particles from the top surface across a detector under a lower bias voltage, significant charge trap** is observed when compared to operating at a higher bias voltage. The amount of charge trap** shows a strong dependence on the type of charge carriers. Electrons are trapped more than holes in a p-type detector while holes are trapped more than electrons in a n-type detector. When both electrons and holes are drifted simultaneously using the widespread charge carriers created by $γ$ rays inside the detector, the amount of charge trap** shows no dependence on the polarity of bias voltage.
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Submitted 18 May, 2022; v1 submitted 28 March, 2022;
originally announced March 2022.
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Observation of topological Euler insulators with a trapped-ion quantum simulator
Authors:
W. -D. Zhao,
Y. -B. Yang,
Y. Jiang,
Z. -C. Mao,
W. -X. Guo,
L. -Y. Qiu,
G. -X. Wang,
L. Yao,
L. He,
Z. -C. Zhou,
Y. Xu,
L. -M. Duan
Abstract:
Symmetries play a crucial role in the classification of topological phases of matter. Although recent studies have established a powerful framework to search for and classify topological phases based on symmetry indicators, there exists a large class of fragile topology beyond the description. The Euler class characterizing the topology of two-dimensional real wave functions is an archetypal fragi…
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Symmetries play a crucial role in the classification of topological phases of matter. Although recent studies have established a powerful framework to search for and classify topological phases based on symmetry indicators, there exists a large class of fragile topology beyond the description. The Euler class characterizing the topology of two-dimensional real wave functions is an archetypal fragile topology underlying some important properties, such as non-Abelian braiding of crossing nodes and higher-order topology. However, as a minimum model of fragile topology, the two-dimensional topological Euler insulator consisting of three bands remains a significant challenge to be implemented in experiments. Here, we experimentally realize a three-band Hamiltonian to simulate a topological Euler insulator with a trapped-ion quantum simulator. Through quantum state tomography, we successfully evaluate the Euler class, Wilson loop flow and entanglement spectra to show the topological properties of the Hamiltonian. We also measure the Berry phases of the lowest energy band, illustrating the existence of four crossing points protected by the Euler class. The flexibility of the trapped-ion quantum simulator further allows us to probe dynamical topological features including skyrmion-antiskyrmion pairs and Hopf links in momentum-time space from quench dynamics. Our results show the advantage of quantum simulation technologies for studying exotic topological phases and open a new avenue for investigating fragile topological phases in experiments.
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Submitted 23 January, 2022;
originally announced January 2022.
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Development of Planar P-type Point Contact Germanium Detectors for Low-Mass Dark Matter Searches
Authors:
W. -Z. Wei,
H. Mei,
K. Kooi,
D. -M. Mei,
J. Liu,
J. -C. Li,
R. Panth,
G. -J. Wang
Abstract:
The detection of low-energy deposition in the range of sub-eV through ionization using germanium (Ge) with a bandgap of $\sim$0.7 eV requires internal amplification of charge signal. This can be achieved through high electric field which accelerates charge carriers to generate more charge carriers. The minimum electric field required to generate internal charge amplification is derived for differe…
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The detection of low-energy deposition in the range of sub-eV through ionization using germanium (Ge) with a bandgap of $\sim$0.7 eV requires internal amplification of charge signal. This can be achieved through high electric field which accelerates charge carriers to generate more charge carriers. The minimum electric field required to generate internal charge amplification is derived for different temperatures. A point contact Ge detector provides extremely high electric field in proximity to the point contact. We show the development of a planar point contact detector and its performance. The field distribution is calculated for this planar point contact detector. We demonstrate the required electric field can be achieved with a point contact detector.
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Submitted 6 October, 2021; v1 submitted 5 May, 2021;
originally announced May 2021.
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Implication of the Temperature-Dependent Charge Barrier Height of Amorphous Germanium Contact Detector in Searching for Rare Event Physics
Authors:
R. Panth,
W. -Z. Wei,
D. -M. Mei,
J. Liu,
S. Bhattarai,
H. Mei,
M. Raut,
P. Acharya,
K. Kooi,
G. -J. Wang
Abstract:
The exploration of germanium (Ge) detectors with amorphous Ge (a-Ge) contacts has drawn attention to the searches for rare-event physics such as dark matter and neutrinoless double-beta decay. The charge barrier height (CBH) of the a-Ge contacts deposited on the detector surface is crucial to suppress the leakage current of the detector in order to achieve la ow-energy detection threshold and high…
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The exploration of germanium (Ge) detectors with amorphous Ge (a-Ge) contacts has drawn attention to the searches for rare-event physics such as dark matter and neutrinoless double-beta decay. The charge barrier height (CBH) of the a-Ge contacts deposited on the detector surface is crucial to suppress the leakage current of the detector in order to achieve la ow-energy detection threshold and high-energy resolution. The temperature-dependent CBH of a-Ge contacts for three Ge detectors is analyzed to study the bulk leakage current (BLC) characteristics. The detectors were fabricated at the University of South Dakota using homegrown crystals. The CBH is determined from the BLC when the detectors are operated in the reverse bias mode with a guard-ring structure, which separates the BLC from the surface leakage current (SLC). The results show that CBH is temperature dependent. The direct relation of the CBH variation to temperature is related to the barrier inhomogeneities created on the interface of a-Ge and crystalline Ge. The inhomogeneities that occur at the interface were analyzed using the Gaussian distribution model for three detectors. The CBH of a-Ge contact is projected to zero temperature. The implication of the CBH at zero temperature is discussed for Ge detectors with a-Ge contacts in searching for rare-event physics.
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Submitted 2 April, 2021; v1 submitted 22 January, 2021;
originally announced January 2021.
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Characterization of High-Purity Germanium Detectors with Amorphous Germanium Contacts in Cryogenic Liquids
Authors:
R. Panth,
J. Liu,
I. Abt,
X. Liu,
O. Schulz,
W. -Z. Wei,
H. Mei,
D. -M. Mei,
G. -J. Wang
Abstract:
For the first time, planar high-purity germanium detectors with thin amorphous germanium contacts were successfully operated directly in liquid nitrogen and liquid argon in a cryostat at the Max-Planck-Institut fuer Physics in Munich. The detectors were fabricated at the Lawrence Berkeley National Laboratory and the University of South Dakota, using crystals grown at the University of South Dakota…
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For the first time, planar high-purity germanium detectors with thin amorphous germanium contacts were successfully operated directly in liquid nitrogen and liquid argon in a cryostat at the Max-Planck-Institut fuer Physics in Munich. The detectors were fabricated at the Lawrence Berkeley National Laboratory and the University of South Dakota, using crystals grown at the University of South Dakota. They survived long-distance transportation and multiple thermal cycles in both cryogenic liquids and showed reasonable leakage currents and spectroscopic performance. Also discussed are the pros and cons of using thin amorphous semiconductor materials as an alternative contact technology in large-scale germanium experiments searching for physics beyond the Standard Model.
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Submitted 3 August, 2020; v1 submitted 30 March, 2020;
originally announced March 2020.
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Characterization of High-Purity Germanium (Ge) Crystals for Develo** Novel Ge Detectors
Authors:
M. -S. Raut,
H. Mei,
D. -M. Mei,
S. Bhattarai,
W. -Z. Wei,
R. Panda,
P. Acharya,
G. -J. Wang
Abstract:
High-purity germanium (HPGe) crystals are required to be well-characterized before being fabricated into Ge detectors. The characterization of HPGe crystals is often performed with the Hall Effect system, which measures the carrier concentration, the Hall mobility, and the electrical resistivity. The reported values have a strong dependence on the size of the ohmic contacts and the geometry of the…
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High-purity germanium (HPGe) crystals are required to be well-characterized before being fabricated into Ge detectors. The characterization of HPGe crystals is often performed with the Hall Effect system, which measures the carrier concentration, the Hall mobility, and the electrical resistivity. The reported values have a strong dependence on the size of the ohmic contacts and the geometry of the samples used in conducting the Hall Effect measurements. We conduct a systematic study using four samples cut from the same location in a HPGe crystal made into different sized ohmic contacts or different geometries to study the variation of the measured parameters from the Hall Effect system. The results are compared to the C-V measurements provided by the Ge detector made from the same crystal. We report the systematic errors involved with the Hall Effect system and find a reliable technique that minimizes the systematic error to be only a few percent from the Hall Effect measurements.
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Submitted 22 July, 2020; v1 submitted 17 February, 2020;
originally announced February 2020.
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The Impact of the Charge Barrier Height on Germanium (Ge) Detectors with Amorphous-Ge Contacts for Light Dark Matter Searches
Authors:
W. -Z. Wei,
R. Panth,
J. Liu,
H. Mei,
D. -M. Mei,
G. -J. Wang
Abstract:
Germanium (Ge) detectors with ability of measuring a single electron-hole (e-h) pair are needed in searching for light dark matter (LDM) down to the MeV scale. We investigate the feasibility of Ge detectors with amorphous-Ge (a-Ge) contacts to achieve the sensitivity of measuring a single e-h pair, which requires extremely low leakage current. Three Ge detectors with a-Ge contacts are used to stud…
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Germanium (Ge) detectors with ability of measuring a single electron-hole (e-h) pair are needed in searching for light dark matter (LDM) down to the MeV scale. We investigate the feasibility of Ge detectors with amorphous-Ge (a-Ge) contacts to achieve the sensitivity of measuring a single e-h pair, which requires extremely low leakage current. Three Ge detectors with a-Ge contacts are used to study the charge barrier height for blocking electrons and holes. Using the measured bulk leakage current and the D$\ddot{o}$hler-Brodsky model, we obtain the values for charge barrier height and the density of localized energy states near the Fermi energy level for the top and bottom contacts, respectively. We predict that the bulk leakage current is extremely small and can be neglected at helium temperature ($\sim$4 K). Thus, Ge detectors with a-Ge contacts possess the potential to measure a single e-h pair for detecting LDM particles.
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Submitted 28 April, 2020; v1 submitted 9 February, 2020;
originally announced February 2020.
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Impact of Charge Trap** on the Energy Resolution of Ge Detectors for Rare-Event Physics Searches
Authors:
D. -M. Mei,
R. B Mukund,
W. -Z. Wei,
R. Panth,
J. Liu,
H. Mei,
Y. -Y. Li,
P. Acharya,
S. Bhattarai,
K. Kooi,
M-S. Raut,
X. -S. Sun,
A. Kirkvold,
K. -M. Dong,
X. -H. Meng,
G. -J. Wang,
G. Yang
Abstract:
Charge trap** degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trap** processes utilizing nine planar detectors fabricated from USD-grown crystals with well-known net impurity levels. The charge collection efficiency as a function of cha…
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Charge trap** degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trap** processes utilizing nine planar detectors fabricated from USD-grown crystals with well-known net impurity levels. The charge collection efficiency as a function of charge trap** length is derived from the Shockley-Ramo theorem. Furthermore, we develop a model that correlates the energy resolution with the charge collection efficiency. This model is then applied to the experimental data. As a result, charge collection efficiency and charge trap** length are determined accordingly. Utilizing the Lax model (further developed by CDMS collaborators), the absolute impurity levels are determined for nine detectors. The knowledge of these parameters when combined with other traits such as the Fano factor serve as a reliable indicator of the intrinsic nature of charge trap** within the crystals. We demonstrate that electron trap** is more severe than hole trap** in a p-type detector and the charge collection efficiency depends on the absolute impurity level of the Ge crystal when an adequate bias voltage is applied to the detector. Negligible charge trap** is found when the absolute impurity level is less than 1.0$\times$10$^{11}/$cm$^{3}$ for collecting electrons and 2.0$\times$10$^{11}/$cm$^{3}$ for collecting holes.
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Submitted 28 April, 2020; v1 submitted 12 September, 2019;
originally announced September 2019.
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Fabrication and Characterization of High-Purity Germanium Detectors with Amorphous Germanium Contacts
Authors:
X. -H. Meng,
G. -J. Wang,
M. -D. Wagner,
H. Mei,
W. -Z. Wei,
J. Liu,
G. Yang,
D. -M. Mei
Abstract:
Large, high-purity, germanium (HPGe) detectors are needed for neutrinoless double-beta decay and dark matter experiments. Currently, large (> 4 inches in diameter) HPGe crystals can be grown at the University of South Dakota (USD). We verify that the quality of the grown crystals is sufficient for use in large detectors by fabricating and characterizing smaller HPGe detectors made from those cryst…
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Large, high-purity, germanium (HPGe) detectors are needed for neutrinoless double-beta decay and dark matter experiments. Currently, large (> 4 inches in diameter) HPGe crystals can be grown at the University of South Dakota (USD). We verify that the quality of the grown crystals is sufficient for use in large detectors by fabricating and characterizing smaller HPGe detectors made from those crystals. We report the results from eight detectors fabricated over six months using crystals grown at USD. Amorphous germanium (a-Ge) contacts are used for blocking both electrons and holes. Two types of geometry were used to fabricate HPGe detectors. As a result, the fabrication process of small planar detectors at USD is discussed in great detail. The impact of the procedure and geometry on the detector performance was analyzed for eight detectors. We characterized the detectors by measuring the leakage current, capacitance, and energy resolution at 662 keV with a Cs-137 source. Four detectors show good performance, which indicates that crystals grown at USD are suitable for making HPGe detectors.
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Submitted 14 February, 2019; v1 submitted 12 October, 2018;
originally announced October 2018.
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Investigation of Amorphous Germanium Contact Properties with Planar Detectors Made from Home-Grown Germanium Crystals
Authors:
W. -Z. Wei,
X. -H. Meng,
Y. -Y. Yang,
J. Liu,
G. -J. Wang,
H. Mei,
G. Gang,
D. -M. Mei,
C. Zhang
Abstract:
The characterization of detectors fabricated from home-grown crystals is the most direct way to study crystal properties. We fabricated planar detectors from high-purity germanium (HPGe) crystals grown at the University of South Dakota (USD). In the fabrication process, a HPGe crystal slice cut from a USD-grown crystal was coated with a high resistivity thin film of amorphous Ge (a-Ge) followed by…
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The characterization of detectors fabricated from home-grown crystals is the most direct way to study crystal properties. We fabricated planar detectors from high-purity germanium (HPGe) crystals grown at the University of South Dakota (USD). In the fabrication process, a HPGe crystal slice cut from a USD-grown crystal was coated with a high resistivity thin film of amorphous Ge (a-Ge) followed by depositing a thin layer of aluminum on top of the a-Ge film to define the physical area of the contacts. We investigated the detector performance including the $I$-$V$ characteristics, $C$-$V$ characteristics and spectroscopy measurements for a few detectors. The results document the good quality of the USD-grown crystals and electrical contacts.
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Submitted 13 December, 2018; v1 submitted 11 September, 2018;
originally announced September 2018.
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The Large Enriched Germanium Experiment for Neutrinoless Double Beta Decay (LEGEND)
Authors:
LEGEND Collaboration,
N. Abgrall,
A. Abramov,
N. Abrosimov,
I. Abt,
M. Agostini,
M. Agartioglu,
A. Ajjaq,
S. I. Alvis,
F. T. Avignone III,
X. Bai,
M. Balata,
I. Barabanov,
A. S. Barabash,
P. J. Barton,
L. Baudis,
L. Bezrukov,
T. Bode,
A. Bolozdynya,
D. Borowicz,
A. Boston,
H. Boston,
S. T. P. Boyd,
R. Breier,
V. Brudanin
, et al. (208 additional authors not shown)
Abstract:
The observation of neutrinoless double-beta decay (0$νββ$) would show that lepton number is violated, reveal that neutrinos are Majorana particles, and provide information on neutrino mass. A discovery-capable experiment covering the inverted ordering region, with effective Majorana neutrino masses of 15 - 50 meV, will require a tonne-scale experiment with excellent energy resolution and extremely…
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The observation of neutrinoless double-beta decay (0$νββ$) would show that lepton number is violated, reveal that neutrinos are Majorana particles, and provide information on neutrino mass. A discovery-capable experiment covering the inverted ordering region, with effective Majorana neutrino masses of 15 - 50 meV, will require a tonne-scale experiment with excellent energy resolution and extremely low backgrounds, at the level of $\sim$0.1 count /(FWHM$\cdot$t$\cdot$yr) in the region of the signal. The current generation $^{76}$Ge experiments GERDA and the MAJORANA DEMONSTRATOR utilizing high purity Germanium detectors with an intrinsic energy resolution of 0.12%, have achieved the lowest backgrounds by over an order of magnitude in the 0$νββ$ signal region of all 0$νββ$ experiments. Building on this success, the LEGEND collaboration has been formed to pursue a tonne-scale $^{76}$Ge experiment. The collaboration aims to develop a phased 0$νββ$ experimental program with discovery potential at a half-life approaching or at $10^{28}$ years, using existing resources as appropriate to expedite physics results.
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Submitted 6 September, 2017;
originally announced September 2017.
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Direct Detection of MeV-Scale Dark Matter Utilizing Germanium Internal Amplification for the Charge Created by the Ionization of Impurities
Authors:
D. -M. Mei,
G. -J. Wang,
H. Mei,
G. Yang,
J. Liu,
M. Wagner,
R. Panth,
K. Kooi,
Y. -Y. Li,
W. -Z. Wei
Abstract:
Light, MeV-scale dark matter (DM) is an exciting DM candidate that is undetectable by current experiments. A germanium (Ge) detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is a promising new technology with experimental sensitivity for detecting MeV-scale DM. We analyze the physics mechanisms of the signal formation, charge creation,…
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Light, MeV-scale dark matter (DM) is an exciting DM candidate that is undetectable by current experiments. A germanium (Ge) detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is a promising new technology with experimental sensitivity for detecting MeV-scale DM. We analyze the physics mechanisms of the signal formation, charge creation, charge internal amplification, and the projected sensitivity for directly detecting MeV-scale DM particles. We present a design for a novel Ge detector at helium temperature ($\sim$4 K) enabling ionization of impurities from DM impacts. With large localized E-fields, the ionized excitations can be accelerated to kinetic energies larger than the Ge bandgap at which point they can create additional electron-hole pairs, producing intrinsic amplification to achieve an ultra-low energy threshold of $\sim$0.1 eV for detecting low-mass DM particles in the MeV scale. Correspondingly, such a Ge detector with 1 kg-year exposure will have high sensitivity to a DM-nucleon cross section of $\sim$5$\times$10$^{-45}$ cm$^{2}$ at a DM mass of $\sim$10 MeV/c$^{2}$ and a DM-electron cross section of $\sim$5$\times$10$^{-46}$cm$^{2}$ at a DM mass of $\sim$1 MeV/c$^2$.
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Submitted 22 August, 2017;
originally announced August 2017.
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The impact of neutral impurity concentration on charge drift mobility in n-type germanium
Authors:
H. Mei,
G. -J. Wang,
G. Yang,
D. -M. Mei
Abstract:
The impact of neutral impurity scattering of electrons on the charge drift mobility in high purity n-type germanium crystals at 77 Kelvin is investigated. We calculated the contributions from ionized impurity scattering, lattice scattering, and neutral impurity scattering to the total charge drift mobility using theoretical models. The experimental data such as charge carrier concentration, mobili…
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The impact of neutral impurity scattering of electrons on the charge drift mobility in high purity n-type germanium crystals at 77 Kelvin is investigated. We calculated the contributions from ionized impurity scattering, lattice scattering, and neutral impurity scattering to the total charge drift mobility using theoretical models. The experimental data such as charge carrier concentration, mobility and resistivity are measured by Hall Effect system at 77 Kelvin. The neutral impurity concentration is derived from the Matthiessen's rule using the measured Hall mobility and ionized impurity concentration. The radial distribution of the neutral impurity concentration in the self-grown crystals is determined. Consequently, we demonstrated that neutral impurity scattering is a significant contribution to the charge drift mobility, which has a dependence on the concentration of neutral impurities in high purity n-type germanium crystal.
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Submitted 24 May, 2017;
originally announced May 2017.
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The impact of neutral impurity concentration on charge drift mobility in germanium
Authors:
H. Mei,
D. -M. Mei,
G. -J. Wang,
G. Yang
Abstract:
We reported a new result of the neutral impurity scattering of holes that has impact on the charge drift mobility in high purity p-type germanium crystals at 77 Kelvin. The charge carrier concentration, mobility and resistivity are measured by Hall Effect system at 77 Kelvin. We investigated the contribution to the total charge drift mobility from ionized impurity scattering, lattice scattering, a…
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We reported a new result of the neutral impurity scattering of holes that has impact on the charge drift mobility in high purity p-type germanium crystals at 77 Kelvin. The charge carrier concentration, mobility and resistivity are measured by Hall Effect system at 77 Kelvin. We investigated the contribution to the total charge drift mobility from ionized impurity scattering, lattice scattering, and neutral impurity scattering with the best theoretical models and experimental data. Several samples with measured Hall mobility from the grown crystals are used for this investigation. With the measured Hall mobility and ionized impurity concentration as well as the theoretical models, we calculated the neutral impurity concentration by the Matthiessen's rule. As a result, the distributions of the neutral impurity concentrations with respect to the radius of the crystals are obtained. Consequently, we demonstrated that neutral impurity scattering is a significant contribution to the charge drift mobility, which has dependence on the concentration of neutral impurities in a given germanium crystal.
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Submitted 20 December, 2016; v1 submitted 8 July, 2016;
originally announced July 2016.
