-
Sub-Volt High-Speed Silicon MOSCAP Microring Modulator Driven by High Mobility Conductive Oxide
Authors:
Wei-Che Hsu,
Nabila Nujhat,
Benjamin Kupp,
John F. Conley Jr,
Haisheng Rong,
Ranjeet Kumar,
Alan X. Wang
Abstract:
Low driving voltage (Vpp), high-speed silicon microring modulator plays a critical role in energy-efficient optical interconnect and optical computing systems owing to its ultra-compact footprint and capability for on-chip wavelength-division multiplexing. However, existing silicon microring modulators usually require more than 2 V of Vpp, which is limited by the relatively weak plasma dispersion…
▽ More
Low driving voltage (Vpp), high-speed silicon microring modulator plays a critical role in energy-efficient optical interconnect and optical computing systems owing to its ultra-compact footprint and capability for on-chip wavelength-division multiplexing. However, existing silicon microring modulators usually require more than 2 V of Vpp, which is limited by the relatively weak plasma dispersion effect of silicon and the small capacitance density of the reversed PN-junction. Here we present a highly efficient metal-oxide semiconductor capacitor (MOSCAP) microring modulator through heterogeneous integration between silicon photonics and titanium-doped indium oxide, which is a high-mobility transparent conductive oxide (TCO) material with a strong plasma dispersion effect. The device is co-fabricated by Intel's photonics fab and TCO patterning processes at Oregon State University, which exhibits a high electro-optic modulation efficiency of 117 pm/V with a low VpiL of 0.12 Vcm, and consequently can be driven by an extremely low Vpp of 0.8 V. At a 11 GHz modulation bandwidth where the modulator is limited by the high parasitic capacitance, we obtained 25 Gb/s clear eye diagrams with energy efficiency of 53 fJ/bit and demonstrated 35 Gb/s open eyes with a higher driving voltage. Further optimization of the device is expected to increase the modulation bandwidth up to 52 GHz that can encode data at 100 Gb/s for next-generation, energy-efficient optical communication and computation with sub-volt driving voltage without using any high voltage swing amplifier.
△ Less
Submitted 30 August, 2023;
originally announced August 2023.
-
High-Speed Femto-Joule per Bit Silicon-Conductive Oxide Nanocavity Modulator
Authors:
Erwen Li,
Bokun Zhou,
Yunfei Bo,
Alan X. Wang
Abstract:
By combining the large Purcell effect of photonic crystal nanocavity and the strong plasma dispersion effect of the transparent conductive oxides, ultra-compact silicon modulators with heterogeneously integrated indium-tin-oxide (ITO) can potentially achieve unprecedented energy efficiency to atto-joule per bit. In this article, we report the first high-speed silicon nanocavity modulator driven by…
▽ More
By combining the large Purcell effect of photonic crystal nanocavity and the strong plasma dispersion effect of the transparent conductive oxides, ultra-compact silicon modulators with heterogeneously integrated indium-tin-oxide (ITO) can potentially achieve unprecedented energy efficiency to atto-joule per bit. In this article, we report the first high-speed silicon nanocavity modulator driven by an ITO gate, achieving 2.2 GHz bandwidth. On-off-key modulation is measured up to 5 Gb/s with only 2 V voltage swing and 18.3 fJ/bit energy efficiency. In addition, we perform in-depth analysis of the energy efficiency and high frequency simulation of the nanocavity modulator, revealing the critical role played by the semiconductor conduction path and the overlap** factor between the accumulated free carriers and the cavity resonant mode. Based on our analysis, we propose a strategy to further improve the modulation bandwidth to 23.5 GHz by node-matched do** and reduce the energy consumption to the range of hundreds of atto-joule per bit.
△ Less
Submitted 3 March, 2020;
originally announced April 2020.
-
EO-polymer waveguide based high dynamic range EM wave sensors
Authors:
Che-Yun Lin,
Alan X. Wang,
Xingyu Zhang,
Beom Suk Lee,
Ray T. Chen
Abstract:
In this paper, we present the design and experimental demonstration of a high dynamic range electric field sensor based on electro-optic (EO) polymer directional coupler waveguides that offers the strong and ultra-fast EO response of EO polymer. As compared to conventional photonic electric field sensors, our directional coupler waveguide design offers several advantages such as bias-free operatio…
▽ More
In this paper, we present the design and experimental demonstration of a high dynamic range electric field sensor based on electro-optic (EO) polymer directional coupler waveguides that offers the strong and ultra-fast EO response of EO polymer. As compared to conventional photonic electric field sensors, our directional coupler waveguide design offers several advantages such as bias-free operation, highly linear measurement response up to 70dB, and a wide electric field detection range from 16.7V/m to 750kV/m at a frequency of 1GHz.
△ Less
Submitted 6 March, 2014;
originally announced March 2014.
-
Improved performance of traveling wave directional coupler modulator based on electro-optic polymer
Authors:
Xingyu Zhang,
Beomsuk Lee,
Che-yun Lin,
Alan X. Wang,
Amir Hosseini,
Xiaohui Lin,
Ray T. Chen
Abstract:
Polymer based electro-optic modulators have shown great potentials in high frequency analog optical links. Existing commercial LiNibO3 Mach-Zehnder modulators have intrinsic drawbacks in linearity to provide high fidelity communication. In this paper, we present the design, fabrication and characterization of a traveling wave directional coupler modulator based on electro-optic polymer, which is a…
▽ More
Polymer based electro-optic modulators have shown great potentials in high frequency analog optical links. Existing commercial LiNibO3 Mach-Zehnder modulators have intrinsic drawbacks in linearity to provide high fidelity communication. In this paper, we present the design, fabrication and characterization of a traveling wave directional coupler modulator based on electro-optic polymer, which is able to provide high linearity, high speed, and low optical insertion loss. A silver ground electrode is used to reduce waveguide sidewall roughness due to the scattering of UV light in photolithography process in addition to suppressing the RF loss. A 1-to-2 multi-mode interference 3dB-splitter, a photobleached refractive index taper and a quasi-vertical taper are used to reduce the optical insertion loss of the device. The symmetric waveguide structure of the MMI-fed directional coupler is intrinsically bias-free, and the modulation is obtained at the 3-dB point regardless of the ambient temperature. By achieving low RF loss, characteristic impedance matching with 50Ω load, and excellent velocity matching between the RF wave and the optical wave, a travelling wave electrode is designed to function up to 62.5GHz. Domain-inversion poling with push-pull configuration is applied using alternating pulses on a 2-section directional-coupler to achieve a spurious free dynamic range of 110dB/Hz2/3. The 3-dB electrical bandwidth of device is measured to be 10GHz.
△ Less
Submitted 1 March, 2014;
originally announced March 2014.
-
High Dynamic Range Electric Field Sensor for Electromagnetic Pulse Detection
Authors:
Che-Yun Lin,
Alan X. Wang,
Beom Suk Lee,
Xingyu Zhang,
Ray T. Chen
Abstract:
We design a high dynamic range electric field sensor based on domain inverted electro-optic (E-O) polymer Y-fed directional coupler for electromagnetic wave detection. This electrode-less, all optical, wideband electrical field sensor is fabricated using standard processing for E-O polymer photonic devices. Experimental results demonstrate effective detection of electric field from 16.7V/m to 750K…
▽ More
We design a high dynamic range electric field sensor based on domain inverted electro-optic (E-O) polymer Y-fed directional coupler for electromagnetic wave detection. This electrode-less, all optical, wideband electrical field sensor is fabricated using standard processing for E-O polymer photonic devices. Experimental results demonstrate effective detection of electric field from 16.7V/m to 750KV/m at a frequency of 1GHz, and spurious free measurement range of 70dB.
△ Less
Submitted 1 March, 2014;
originally announced March 2014.
-
Highly Linear, Broadband Optical Modulator Based on Electro-optic Polymer
Authors:
Xingyu Zhang,
Beomsuk Lee,
Che-yun Lin,
Alan X. Wang,
Amir Hosseini,
Ray T. Chen
Abstract:
In this paper, we present the design, fabrication and characterization of a traveling wave directional coupler modulator based on electro-optic polymer, which is able to provide both high linearity and broad bandwidth. The high linearity is realized by introducing domain-inversion technique in the two-domain directional coupler. A travelling wave electrode is designed to function with bandwidth-le…
▽ More
In this paper, we present the design, fabrication and characterization of a traveling wave directional coupler modulator based on electro-optic polymer, which is able to provide both high linearity and broad bandwidth. The high linearity is realized by introducing domain-inversion technique in the two-domain directional coupler. A travelling wave electrode is designed to function with bandwidth-length product of 302GHz cm, by achieving low microwave loss, excellent impedance matching and velocity matching, as well as smooth electric field profile transformation. The 3-dB bandwidth of the device is measured to be 10GHz. The spurious free dynamic range of about 110dB Hz^(2/3) is measured over the modulation frequency range 2-8GHz. To the best of our knowledge, such high linearity is first measured at the frequency up to 8GHz. In addition, a 1-to-2 multi-mode interference 3dB-splitter, a photobleached refractive index taper and a quasi-vertical taper are used to reduce the optical insertion loss of the device.
△ Less
Submitted 1 March, 2014;
originally announced March 2014.
