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Ultra-low do** and local charge variation in graphene measured by Raman: experiment and simulation
Authors:
Zhuofa Chen,
Nathan Ullberg,
Mounika Vutukuru,
David Barton,
Anna K Swan
Abstract:
Avoiding charge density variations and impurities in graphene is vital for high-quality graphene-based devices. Here, we demonstrate an optical method using Raman 2D peak-split to monitor charge density variations in the range 1-25e10 cm-2. We compare Raman signatures with electrostatically gated Raman and transport measurements to correlate the 2D peak-split with the charge density on graphene wi…
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Avoiding charge density variations and impurities in graphene is vital for high-quality graphene-based devices. Here, we demonstrate an optical method using Raman 2D peak-split to monitor charge density variations in the range 1-25e10 cm-2. We compare Raman signatures with electrostatically gated Raman and transport measurements to correlate the 2D peak-split with the charge density on graphene with high precision. We found that the Raman 2D peak-split and peak areas linearly varies with the charge density, where a lower charge density results in a larger 2D peak-split. We simulate Raman 2D spectra under various do** conditions to study the correlation between Raman 2D peak and charge puddles. These simulations give qualitative agreement with experimental results. Our work provides a simple and non-invasive optical method for estimating the do** level, local charge density variation and transport properties of graphene before fabricating graphene devices, with up to two orders of magnitude higher precision than previously reported optical methods.
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Submitted 8 May, 2020;
originally announced May 2020.
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Monitoring the low do** regime in graphene using Raman 2D peak-splits: Comparison of gated Raman and transport measurements
Authors:
Zhuofa Chen,
Nathan Ullberg,
Mounika Vutukuru,
David Barton,
Anna K Swan
Abstract:
Avoiding charge density fluctuations and impurities in graphene is vital for high-quality graphene-based devices. Traditional characterization methods require device fabrication and electrical transport measurements, which are labor-intensive and time-consuming. Existing optical methods using Raman spectroscopy only work for do** levels higher than ~10^12 cm^-2. Here, we propose an optical metho…
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Avoiding charge density fluctuations and impurities in graphene is vital for high-quality graphene-based devices. Traditional characterization methods require device fabrication and electrical transport measurements, which are labor-intensive and time-consuming. Existing optical methods using Raman spectroscopy only work for do** levels higher than ~10^12 cm^-2. Here, we propose an optical method using Raman 2D peak-splitting (split between the Raman 2D1 and 2D2 peaks at low do** levels). Electrostatically gated Raman measurements combined with transport measurements were used to correlate the 2D peak-split with the charge density on graphene with high precision (2x10^10 cm^-2 per 2D peak-split wavenumber). We found that the Raman 2D peak-split has a strong correlation with the charge density at low do** levels, and that a lower charge density results in a larger 2D peak-split. Our work provides a simple and non-invasive optical method to quantify the do** level of graphene from 10^10 cm^-2 to 10^12 cm^-2, two orders of magnitude higher precision than previously reported optical methods. This method provides a platform for estimating the do** level and quality of graphene before fabricating graphene devices
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Submitted 28 August, 2019;
originally announced August 2019.
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Modeling and Thermal Metrology of Thermally Isolated MEMS Electrothermal Actuators for Strain Engineering of 2D Materials
Authors:
Mounika Vutukuru,
Jason W. Christopher,
Corey Pollock,
David J. Bishop,
Anna K. Swan
Abstract:
We present electrothermal microelectromechanical (MEMS) actuators as a practical platform for straining 2D materials. The advantages of the electrothermal actuator is its high output force and displacement for low input voltage, but its drawback is that it is actuated by generating high amounts of heat. It is crucial to mitigate the high temperatures generated during actuation for reliable 2D mate…
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We present electrothermal microelectromechanical (MEMS) actuators as a practical platform for straining 2D materials. The advantages of the electrothermal actuator is its high output force and displacement for low input voltage, but its drawback is that it is actuated by generating high amounts of heat. It is crucial to mitigate the high temperatures generated during actuation for reliable 2D material strain device implementation. Here, we implement a chevron actuator design that incorporates a thermal isolation stage in order to avoid heating the 2D material from the high temperatures generated during the actuation. By comparing experiment and simulation, we ensure our design does not compromise output displacement, while kee** the 2D material strain device stage cool. We also provide a simple analytical model useful for quickly evaluating different thermal isolation stage designs.
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Submitted 13 November, 2018;
originally announced November 2018.
