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Universal radiation tolerant semiconductor
Authors:
Alexander Azarov,
Javier García Fernández,
Junlei Zhao,
Flyura Djurabekova,
Huan He,
Ru He,
Øystein Prytz,
Lasse Vines,
Umutcan Bektas,
Paul Chekhonin,
Nico Klingner,
Gregor Hlawacek,
Andrej Kuznetsov
Abstract:
Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Speci…
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Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in gamma-Ga2O3. In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the beta-to-gamma Ga2O3 transformation, as a function of the increased disorder in beta-Ga2O3 and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that gamma/beta double polymorph Ga2O3 structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors.
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Submitted 14 August, 2023; v1 submitted 23 March, 2023;
originally announced March 2023.
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Properties of donor qubits in ZnO formed by indium ion implantation
Authors:
Xingyi Wang,
Christian Zimmermann,
Michael Titze,
Vasileios Niaouris,
Ethan R. Hansen,
Samuel H. D'Ambrosia,
Lasse Vines,
Edward S. Bielejec,
Kai-Mei C. Fu
Abstract:
Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, c…
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Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, comparable to the optical linewidth of $\textit{in situ}$ In. Longitudinal spin relaxation times ($T_1$) exceed reported values for $\textit{in situ}$ Ga donors, indicating that residual In implantation damage does not degrade $T_1$. Two laser Raman spectroscopy on the donor spin reveals the hyperfine interaction of the donor electron with the spin-9/2 In nuclei. This work is an important step toward the deterministic formation of In donor qubits in ZnO with optical access to a long-lived nuclear spin memory.
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Submitted 14 June, 2023; v1 submitted 10 December, 2022;
originally announced December 2022.
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Predicting Solid State Material Platforms for Quantum Technologies
Authors:
Oliver Lerstøl Hebnes,
Marianne Etzelmüller Bathen,
Øyvind Sigmundson Schøyen,
Sebastian G. Winther Larsen,
Lasse Vines,
Morten Hjorth-Jensen
Abstract:
Semiconductor materials provide a compelling platform for quantum technologies (QT), and the properties of a vast amount of materials can be found in databases containing information from both experimental and theoretical explorations. However, searching these databases to find promising candidate materials for quantum technology applications is a major challenge. Therefore, we have developed a fr…
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Semiconductor materials provide a compelling platform for quantum technologies (QT), and the properties of a vast amount of materials can be found in databases containing information from both experimental and theoretical explorations. However, searching these databases to find promising candidate materials for quantum technology applications is a major challenge. Therefore, we have developed a framework for the automated discovery of semiconductor host platforms for QT using material informatics and machine learning methods, resulting in a dataset consisting of over $25.000$ materials and nearly $5000$ physics-informed features. Three approaches were devised, named the Ferrenti, extended Ferrenti and the empirical approach, to label data for the supervised machine learning (ML) methods logistic regression, decision trees, random forests and gradient boosting. We find that of the three, the empirical approach relying exclusively on findings from the literature predicted substantially fewer candidates than the other two approaches with a clear distinction between suitable and unsuitable candidates when comparing the two largest eigenvalues in the covariance matrix. In contrast to expectations from the literature and that found for the Ferrenti and extended Ferrenti approaches focusing on band gap and ionic character, the ML methods from the empirical approach highlighted features related to symmetry and crystal structure, including bond length, orientation and radial distribution, as influential when predicting a material as suitable for QT. All three approaches and all four ML methods agreed on a subset of $47$ eligible candidates %(to a probability of $>50 \ \%$) of $8$ elemental, $29$ binary, and $10$ tertiary compounds, and provide a basis for further material explorations towards quantum technology.
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Submitted 30 March, 2022;
originally announced March 2022.
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Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience
Authors:
Alireza Assar,
Filipe Martinho,
Jes Larsen,
Nishant Saini,
Denver Shearer,
Marcos V. Moro,
Fredrik Stulen,
Sigbjørn Grini,
Sara Engberg,
Eugen Stamate,
Jørgen Schou,
Lasse Vines,
Stela Canulescu,
Charlotte Platzer-Björkman,
Ole Hansen
Abstract:
Multijunction solar cells in a tandem configuration could further lower the costs of electricity if crystalline Si (c-Si) is used as bottom cell. However, for direct monolithic integration on c-Si, only a restricted number of top and bottom cell architectures are compatible, due to either epitaxy or high temperature constraints, where the interface between subcells is subject to a trade-off betwee…
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Multijunction solar cells in a tandem configuration could further lower the costs of electricity if crystalline Si (c-Si) is used as bottom cell. However, for direct monolithic integration on c-Si, only a restricted number of top and bottom cell architectures are compatible, due to either epitaxy or high temperature constraints, where the interface between subcells is subject to a trade-off between transmittance, electrical interconnection, and bottom cell degradation. Using polySi/SiOx passivating contacts for Si, this degradation can be largely circumvented by tuning the polySi/SiOx stacks to promote gettering of contaminants admitted into the Si bottom cell during the top cell synthesis. Applying this concept to the low-cost top cell chalcogenides Cu2ZnSnS4 (CZTS), CuGaSe2 (CGSe) and AgInGaSe2 (AIGSe), fabricated under harsh S or Se atmospheres above 550 °C, we show that increasing the heavily-doped polySi layer thickness from 40 to up to 400 nm prevents a reduction in Si carrier lifetime by one order of magnitude, with final lifetimes above 500 us uniformly across areas up to 20 cm2. In all cases, the increased resilience was correlated with a 99.9% reduction in contaminant concentration in the c-Si bulk, provided by the thick polySi layer, which acts as a buried gettering layer in the tandem structure without compromising the Si passivation quality. The Si resilience decreased as AIGSe > CGSe > CZTS, in accordance with the measured Cu contamination profiles and higher annealing temperatures. An efficiency of up to 7% was achieved for a CZTS/Si tandem, where the Si bottom cell is no longer the limiting factor.
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Submitted 4 November, 2021;
originally announced November 2021.
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Formation of carbon interstitial-related defect levels by thermal injection of carbon into $n$-type 4$H$-SiC
Authors:
Robert Karsthof,
Marianne Etzelmüller Bathen,
Andrej Kuznetsov,
Lasse Vines
Abstract:
Electrical properties of point defects in 4$H$-SiC have been studied extensively, but those related to carbon interstitials (C$_{i}$) have remained surprisingly elusive until now. Indeed, when introduced via ion irradiation or implantation, signatures related to C$_{i}$ observed by deep level transient spectroscopy (DLTS) tend to overlap with those of other primary defects, making the direct ident…
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Electrical properties of point defects in 4$H$-SiC have been studied extensively, but those related to carbon interstitials (C$_{i}$) have remained surprisingly elusive until now. Indeed, when introduced via ion irradiation or implantation, signatures related to C$_{i}$ observed by deep level transient spectroscopy (DLTS) tend to overlap with those of other primary defects, making the direct identification of C$_{i}$-related levels difficult. Recent literature has suggested to assign the so-called M center, often found in as-irradiated 4H-SiC, to charge state transitions of the C$_{i}$ defect in different configurations. In this work, we have introduced excess carbon into low-doped n-type 150 μm thick 4$H$-SiC epilayers by thermal annealing, with a pyrolyzed carbon cap on the sample surface acting as a carbon source. Because the layers exhibited initially low concentrations of carbon vacancies ([V$_{C}$] = 10$^{11}$ cm$^{-3}$), this enabled us to study the case of complete V$_{C}$ annihilation, and formation of defects due to excess carbon, i.e. carbon interstitials C$_{i}$ and their higher-order complexes. We report on the occurrence of several new levels upon C injection which are likely C$_{i}$-related. Their properties are different from those found for the M center, which points towards a different structural identity of the detected levels. This suggests the existence of a rich variety of C$_{i}$-related defects. The study will also help generating new insights into the microscopic process of V$_{C}$ annihilation during carbon injection processes.
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Submitted 1 November, 2021;
originally announced November 2021.
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Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier
Authors:
Alireza Hajijafarassar,
Filipe Martinho,
Fredrik Stulen,
Sigbjørn Grini,
Simón López-Mariño,
Moises Espíndola-Rodríguez,
Max Döbeli,
Stela Canulescu,
Eugen Stamate,
Mungunshagai Gansukh,
Sara Engberg,
Andrea Crovetto,
Lasse Vines,
Jørgen Schou,
Ole Hansen
Abstract:
Following the recent success of monolithically integrated Perovskite/Si tandem solar cells, great interest has been raised in searching for alternative wide bandgap top-cell materials with prospects of a fully earth-abundant, stable and efficient tandem solar cell. Thin film chalcogenides (TFCs) such as the Cu2ZnSnS4 (CZTS) could be suitable top-cell materials. However, TFCs have the disadvantage…
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Following the recent success of monolithically integrated Perovskite/Si tandem solar cells, great interest has been raised in searching for alternative wide bandgap top-cell materials with prospects of a fully earth-abundant, stable and efficient tandem solar cell. Thin film chalcogenides (TFCs) such as the Cu2ZnSnS4 (CZTS) could be suitable top-cell materials. However, TFCs have the disadvantage that generally at least one high temperature step (>500 C) is needed during the synthesis, which could contaminate the Si bottom cell. Here, we systematically investigate the monolithic integration of CZTS on a Si bottom solar cell. A thermally resilient double-sided Tunnel Oxide Passivated Contact (TOPCon) structure is used as bottom cell. A thin (<25 nm) TiN layer between the top and bottom cells, doubles as diffusion barrier and recombination layer. We show that TiN successfully mitigates in-diffusion of CZTS elements into the c-Si bulk during the high temperature sulfurization process, and find no evidence of electrically active deep Si bulk defects in samples protected by just 10 nm TiN. Post-process minority carrier lifetime in Si exceeded 1.5 ,s. i.e., a promising implied open-circuit voltage (i-Voc) of 715 mV after the high temperature sulfurization. Based on these results, we demonstrate a first proof-of-concept two-terminal CZTS/Si tandem device with an efficiency of 1.1% and a Voc of 900 mV. A general implication of this study is that the growth of complex semiconductors on Si using high temperature steps is technically feasible, and can potentially lead to efficient monolithically integrated two-terminal tandem solar cells.
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Submitted 19 October, 2020;
originally announced October 2020.
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Persistent double layer formation in kesterite solar cells: a critical review
Authors:
Filipe Martinho,
Simon Lopez-Marino,
Moises Espíndola-Rodríguez,
Alireza Hajijafarassar,
Fredrik Stulen,
Sigbjørn Grini,
Max Döbeli,
Mungunshagai Gansukh,
Sara Engberg,
Eugen Stamate,
Lasse Vines,
Jørgen Schou,
Ole Hansen,
Stela Canulescu
Abstract:
In kesterite CZTSSe solar cell research, an asymmetric crystallization profile is often obtained after annealing, resulting in a bilayered or double-layered absorber. So far, only segregated pieces of research exist to characterize this double layer, its formation dynamics and its effect on the performance of devices. Here, we review the existing research on double-layered kesterites and evaluate…
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In kesterite CZTSSe solar cell research, an asymmetric crystallization profile is often obtained after annealing, resulting in a bilayered or double-layered absorber. So far, only segregated pieces of research exist to characterize this double layer, its formation dynamics and its effect on the performance of devices. Here, we review the existing research on double-layered kesterites and evaluate the different mechanisms proposed. Using a cosputtering-based approach, we show that the two layers can differ significantly in morphology, composition and optoelectronic properties, and complement the results with a statistical dataset of over 850 individual CZTS solar cells. By reducing the absorber thickness from above 1000 nm to 300 nm, we show that the double layer segregation is alleviated. In turn, we see a progressive improvement in the device performance for lower thickness, which alone would be inconsistent with the known case of ultrathin CIGS solar cells. By comparing the results with CZTS grown on monocrystalline Si substrates, without a native Na supply, we show that the alkali metal supply does not determine the double layer formation, but merely reduces the threshold for its occurrence. Instead, we propose that the main formation mechanism is the early migration of Cu to the surface during annealing and formation of Cu2-xS phases, in a self-regulating process akin to the Kirkendall effect. We comment on the generality of the mechanism proposed, comparing our results to other synthesis routes, including our own in-house results from solution processing and pulsed laser deposition of sulfide and oxide-based targets. Although the double layer occurrence largely depends on the kesterite synthesis route, the common factors determining the double layer occurrence appear to be the presence of metallic Cu and/or a chalcogen deficiency in the precursor matrix.
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Submitted 16 October, 2020;
originally announced October 2020.
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Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS
Authors:
Filipe Martinho,
Alireza Hajijafarassar,
Simón Lopez-Marino,
Moises Espíndola-Rodríguez,
Sara Engberg,
Mungunshagai Gansukh,
Fredrik Stulen,
Sigbjørn Grini,
Stela Canulescu,
Eugen Stamate,
Andrea Crovetto,
Lasse Vines,
Jørgen Schou,
Ole Hansen
Abstract:
The monolithic tandem integration of third-generation solar energy materials on silicon holds great promise for photoelectrochemistry and photovoltaics. However, this can be challenging when it involves high-temperature reactive processes, which would risk damaging the Si bottom cell. One such case is the high-temperature sulfurization/selenization in thin film chalcogenide solar cells, of which t…
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The monolithic tandem integration of third-generation solar energy materials on silicon holds great promise for photoelectrochemistry and photovoltaics. However, this can be challenging when it involves high-temperature reactive processes, which would risk damaging the Si bottom cell. One such case is the high-temperature sulfurization/selenization in thin film chalcogenide solar cells, of which the kesterite Cu2ZnSnS4 (CZTS) is an example. Here, by using very thin (<10 nm) TiN-based diffusion barriers at the interface, with different composition and properties, we demonstrate on a device level that the protection of the Si bottom cell is largely dependent on the barrier layer engineering. Several monolithic CZTS/Si tandem solar cells with open-circuit voltages (Voc) up to 1.06 V and efficiencies up to 3.9% are achieved, indicating a performance comparable to conventional interfacial layers based on transparent conductive oxides, and pointing to a promising alternative design in solar energy conversion devices.
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Submitted 16 October, 2020;
originally announced October 2020.
