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Memristive effects in YBa2Cu3O7-x devices with transistor-like structure
Authors:
Aurélien Lagarrigue,
Carolina de Dios,
Salvatore Mesoraca,
Santiago Carreira,
Vincent Humbert,
Javier Briatico,
Juan Trastoy,
Javier E. Villegas
Abstract:
Cuprate superconductors are strongly sensitive materials to disorder and oxygen stoichiometry; even minute variations of those parameters drastically change their electronic properties. Here we exploit this characteristic to engineer a memristive device based on the high-T_C superconductor YBa2Cu3O7-x (YBCO), in which local changes of the oxygen content and induced disorder are exploited to produc…
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Cuprate superconductors are strongly sensitive materials to disorder and oxygen stoichiometry; even minute variations of those parameters drastically change their electronic properties. Here we exploit this characteristic to engineer a memristive device based on the high-T_C superconductor YBa2Cu3O7-x (YBCO), in which local changes of the oxygen content and induced disorder are exploited to produce memory effects. These effects are triggered electrically in a three-terminal device whose structure is reminiscent of a transistor, consisting of a YBCO channel and an Al gate. The Al/YBCO interface, which controls the gate conductance, displays a giant, bipolar, reversible switching across a continuum of non-volatile conductance states that span over two Decades. This phenomenon is controlled by the gate voltage magnitude and is caused by oxygen exchange between YBCO and Al. Concomitantly, the channel shows a gradual, irreversible superconductor-to-insulator transition that retains a memory of the power dissipated in the device, and can be explained by induced bulk disorder. The observed effects, and the understanding of the interplay between the underlying mechanisms, constitute interesting ingredients for the design and realization of novel memristors and switches for superconducting electronics.
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Submitted 21 June, 2023;
originally announced June 2023.
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A High-Speed Waveguide Integrated InSe Photodetector on SiN Photonics for NIR Applications
Authors:
Srinvasa Reddy Tamalampudi,
Juan Esteban Villegas,
Ghada Dushaq,
Raman Sankar,
Bruna Paredes,
Mahmoud Rasras
Abstract:
On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to its ultra-high carrier mobility and outstanding photo-responsivity. Here, we report a high-speed photodetector based on a multilayer 90 nm thick InSe integrated…
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On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to its ultra-high carrier mobility and outstanding photo-responsivity. Here, we report a high-speed photodetector based on a multilayer 90 nm thick InSe integrated on a silicon nitride (SiN) waveguide. The device exhibits a low dark current of 10 nA at 1V bias, a remarkable photoresponsivity of 0.38 AW-1, and high external quantum efficiency of 48.4% measured at 5 V bias. This performance is tested at near-infrared (NIR) 976 nm wavelength under ambient conditions. Furthermore, using numerical and experimental investigations, the estimated absorption coefficient per unit length is 0.11dB/um. To determine the dynamic response of the photodetector, its small and large signal frequency response are also evaluated. A 3-dB radiofrequency (RF) bandwidth of 85 MHz is measured with an open-eye diagram observed at 1 Gbit/s data transmission. Given these outstanding optoelectronic merits, active photonic devices based on integrated multilayer InSe can be realized for a variety of applications including short-reach optical interconnects, LiDAR imaging, and biosensing.
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Submitted 1 May, 2023;
originally announced May 2023.
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A Multi-layered GaGeTe Electro-Optic Device Integrated in Silicon Photonics
Authors:
Srinivasa Reddy Tamalampudi,
Ghada Dushaq,
Juan Esteban Villegas,
Bruna Paredes,
Mahmoud S. Rasras
Abstract:
Electrically tunable devices contribute significantly to key functions of photonics integrated circuits. Here, we demonstrate the tuning of the optical index of refraction based on hybrid integration of multi-layered anisotropic GaGeTe on a silicon micro-ring resonator (Si-MRR). Under static applied (DC) bias and transverse-electric (TE) polarization, the device exhibits a linear resonance shift w…
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Electrically tunable devices contribute significantly to key functions of photonics integrated circuits. Here, we demonstrate the tuning of the optical index of refraction based on hybrid integration of multi-layered anisotropic GaGeTe on a silicon micro-ring resonator (Si-MRR). Under static applied (DC) bias and transverse-electric (TE) polarization, the device exhibits a linear resonance shift without any amplitude modulation. However, for the transverse-magnetic (TM) polarization, both amplitude and phase modulation are observed. The corresponding wavelength shift and half-wave voltage length product (V_π.l) for the TE polarization are 1.78 pm/V and 0.9 V.cm, respectively. These values are enhanced for the TM polarizations and correspond to 6.65 pm/V and 0.28 V.cm, respectively. The dynamic radio frequency (RF) response of the devices was also tested at different bias conditions. Remarkably, the device exhibits a 1.6 MHz and 2.1 MHz response at 0 V and 7 V bias, respectively. Based on these findings, the integration of 2D GaGeTe on the silicon photonics platform has great potential for the next generation of integrated photonic applications such as switches and phase shifters.
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Submitted 3 December, 2022;
originally announced December 2022.
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Anisotropic Van der Waals 2D GeAs Integrated on Silicon Four-Waveguide Crossing
Authors:
Ghada Dushaq,
Juan Esteban Villegas,
Bruna Paredes,
Srinivasa Reddy Tamalampudi,
Mahmoud S. Rasras
Abstract:
In-plane optical anisotropy plays a critical role in manipulating light in a wide range of planner photonic devices. In this study, the strong anisotropy of multilayer 2D GeAs is leveraged and utilized to validate the technical feasibility of on-chip light management. A 2D GeAs is stamped into an ultra-compact silicon waveguide four-way crossing optimized for operation in the O-optical band. The m…
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In-plane optical anisotropy plays a critical role in manipulating light in a wide range of planner photonic devices. In this study, the strong anisotropy of multilayer 2D GeAs is leveraged and utilized to validate the technical feasibility of on-chip light management. A 2D GeAs is stamped into an ultra-compact silicon waveguide four-way crossing optimized for operation in the O-optical band. The measured optical transmission spectra indicated a remarkable discrepancy between the in-plane crystal optical axes with an attenuation ratio of ~ 3.5 (at 1330 nm). Additionally, the effect of GeAs crystal orientation on the electro-optic transmission performance is demonstrated on a straight waveguide. A notable 50 % reduction in responsivity was recorded for devices constructed with cross direction compared to devices with a crystal a-direction parallel to the light polarization. This extraordinary optical anisotropy, combined with a high refractive index ~ 4 of 2D GeAs, opens possibilities for efficient on-chip light manipulation in photonic devices.
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Submitted 2 December, 2022;
originally announced December 2022.
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Superconducting bimodal ionic photo-memristor
Authors:
Ralph El Hage,
Vincent Humbert,
Victor Rouco,
Anke Sander,
Jérôme Charliac,
Salvatore Mesoraca,
Juan Trastoy,
Javier Briatico,
Jacobo Santamaría,
Javier E. Villegas
Abstract:
Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical stimuli, to which they respond by varying their electrical resistance across a continuum of nonvolatile states. Recently, much effort has been devoted to develop…
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Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical stimuli, to which they respond by varying their electrical resistance across a continuum of nonvolatile states. Recently, much effort has been devoted to develo** devices that present an analogous response to optical excitation. Here we realize a new class of device, a tunnelling photo-memristor, whose behaviour is bimodal: both electrical and optical stimuli can trigger the switching across resistance states in a way determined by the dual optical-electrical history. This unique behaviour is obtained in a device of ultimate simplicity: an interface between a high-temperature superconductor and a transparent semiconductor. The microscopic mechanism at play is a reversible nanoscale redox reaction between both materials, whose oxygen content determines the electron tunnelling rate across their interface. Oxygen exchange is controlled here via illumination by exploiting a competition between electrochemistry, photovoltaic effects and photo-assisted ion migration. In addition to their fundamental interest, the unveiled electro-optic memory effects have considerable technological potential. Especially in combination with high-temperature superconductivity which, beyond facilitating the high connectivity required in neuromorphic circuits, brings photo-memristive effects to the realm of superconducting electronics.
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Submitted 20 April, 2022;
originally announced April 2022.
