Showing 1–4 of 4 results for author: Vasil'ev, P P

Pulse generation with ultra-superluminal pulse propagation in semiconductor heterostructures by superradiant phase transition enhanced by transient coherent population gratings

Authors: Peter P. Vasil'ev, Richard V. Penty, Ian H. White

Abstract: This paper reports the observation of ultra-superluminal pulse propagation in GaAs/AlGaAs multiple contact heterostuctures in a superradiant emission regime, and shows definitively that it is a different class of emission from conventional spontaneous or stimulated emission. It is shown that coherent population gratings induced in the semiconductor medium under strong electrical pum** have great… ▽ More This paper reports the observation of ultra-superluminal pulse propagation in GaAs/AlGaAs multiple contact heterostuctures in a superradiant emission regime, and shows definitively that it is a different class of emission from conventional spontaneous or stimulated emission. It is shown that coherent population gratings induced in the semiconductor medium under strong electrical pum** have great impact in causing a decrease of the group refractive index in the range of 5-40%. This decrease is much greater than that which would be observed due to conventional carrier depletion or chirp mechanisms. The decrease in refractive index in turn causes faster-than-c propagation of femtosecond pulses. The measurement also shows unequivocally the exist of coherent amplification of electromagnetic pulses in semiconductors at room temperature, the coherence being strongly enhanced by interactions of the light with coherent transient gratings locked to carrier gratings. This pulse generation technique can be anticipated to have great potential in applications where highly coherent femtosecond optical pulses must be generated on demand △ Less

Submitted 24 August, 2015; originally announced August 2015.

Comments: 22 pages, 8 Figs

MSC Class: 82C26

Enhanced longitudinal mode spacing in blue-violet InGaN semiconductor laser

Authors: Igor V. Smetanin, Peter P. Vasil'ev

Abstract: A novel explanation of observed enhanced longitudinal mode spacing in InGaN semiconductor lasers has been proposed. It has been demonstrated that e-h plasma oscillations, which can exist in the laser active layer at certain driving conditions, are responsible for mode clustering effect. The resonant excitation of the plasma oscillations occurs due to longitudinal mode beating. The separation of mo… ▽ More A novel explanation of observed enhanced longitudinal mode spacing in InGaN semiconductor lasers has been proposed. It has been demonstrated that e-h plasma oscillations, which can exist in the laser active layer at certain driving conditions, are responsible for mode clustering effect. The resonant excitation of the plasma oscillations occurs due to longitudinal mode beating. The separation of mode clusters is typically by an order of magnitude larger that the individual mode spacing. △ Less

Submitted 13 January, 2012; originally announced January 2012.

Comments: 3 pages, 2 figures

Theory of the ultrafast mode-locked GaN lasers in a large-signal regime

Authors: Igor V. Smetanin, Peter P. Vasil'ev, Dmitri L. Boiko

Abstract: Analytical theory of the high-power passively mode-locked laser with a slow absorber is developed. In distinguishing from previous treatment, our model is valid at pulse energies well exceeding the saturation energy of absorber. This is achieved by solving the mode-locking master equation in the pulse energy-domain representation. The performances of monolithic sub-picosecond blue-violet GaN mode-… ▽ More Analytical theory of the high-power passively mode-locked laser with a slow absorber is developed. In distinguishing from previous treatment, our model is valid at pulse energies well exceeding the saturation energy of absorber. This is achieved by solving the mode-locking master equation in the pulse energy-domain representation. The performances of monolithic sub-picosecond blue-violet GaN mode-locked diode laser in the high-power operation regime are analyzed using the developed approach. △ Less

Submitted 17 April, 2011; originally announced April 2011.

Comments: 6 pages, 2 figures

Journal ref: Optics Express, Vol. 19 (2011), 17114-17120

Femtosecond superradiance in multiple-section InGaN/GaN quantum well laser structures

Authors: D. L. Boiko, P. P. Vasil'ev

Abstract: We analyze theoretically a possibility of the superradiant emission (SR) in GaN-based quantum well (QW) laser heterostructures. Our model is based on travelling wave Maxwell-Bloch equations predicts building up of macroscopic coherences in the ensemble of carriers in the QWs. We show that SR is covered by the Ginzburg-Landau equation for phase transition to coherent matter state. The generation of… ▽ More We analyze theoretically a possibility of the superradiant emission (SR) in GaN-based quantum well (QW) laser heterostructures. Our model is based on travelling wave Maxwell-Bloch equations predicts building up of macroscopic coherences in the ensemble of carriers in the QWs. We show that SR is covered by the Ginzburg-Landau equation for phase transition to coherent matter state. The generation of superradiant pulses as short as 500 fs at peak powers of over 200 W has been predicted for InGaN/GaN heterostructure QWs with the peak emission in the blue/violet wavelength range. △ Less

Submitted 3 April, 2011; v1 submitted 28 March, 2011; originally announced March 2011.

Comments: 4 pages, 3 figures; v2 : misprints in 2-d Eg.(6) and 2-d Eq.(10) are corrected; v2 is submitted to PRL