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Kapitza-resistance-like exciton dynamics in atomically flat MoSe$_{2}$-WSe$_{2}$ lateral heterojunction
Authors:
Hassan Lamsaadi,
Dorian Beret,
Ioannis Paradisanos,
Pierre Renucci,
Delphine Lagarde,
Xavier Marie,
Bernhard Urbaszek,
Ziyang Gan,
Antony George,
Kenji Watanabe,
Takashi Taniguchi,
Andrey Turchanin,
Laurent Lombez,
Nicolas Combe,
Vincent Paillard,
Jean-Marie Poumirol
Abstract:
Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challe…
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Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe$_{2}$-WSe$_{2}$) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices.
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Submitted 23 June, 2023;
originally announced June 2023.
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Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors
Authors:
Ana Estrada-Real,
Ioannis Paradisanos,
Peter R. Wiecha,
Jean-Marie Poumirol,
Aurelien Cuche,
Gonzague Agez,
Delphine Lagarde,
Xavier Marie,
Vincent Larrey,
Jonas Müller,
Guilhem Larrieu,
Vincent Paillard,
Bernhard Urbaszek
Abstract:
Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling betw…
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Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling between a MoSe2 monolayer and the near-field of dielectric nanoresonators. Through a comparison of dark-field (DF) scattering spectroscopy and photoluminescence excitation experiments (PLE), we show that the MoSe2 absorption can be enhanced via the near-field of a nanoresonator. We demonstrate spectral tuning of the absorption via the geometry of individual Mie resonators. We show that we indeed access the optical near-field of the nanoresonators, by measuring a spectral shift between the typical near-field resonances in PLE compared to the far-field resonances in DF scattering. Our results prove that using MoSe2 as an active probe allows accessing the optical near-field above photonic nanostructures, without the requirement of highly complex near-field microscopy equipment.
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Submitted 25 October, 2022;
originally announced October 2022.
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Inverse design with flexible design targets via deep learning: Tailoring of electric and magnetic multipole scattering from nano-spheres
Authors:
Ana Estrada-Real,
Abdourahman Khaireh-Walieh,
Bernhard Urbaszek,
Peter R. Wiecha
Abstract:
Deep learning is a promising, ultra-fast approach for inverse design in nano-optics, but despite fast advancement of the field, the computational cost of dataset generation, as well as of the training procedure itself remains a major bottleneck. This is particularly inconvenient because new data need to be generated and a new network needs to be trained for any modification of the problem. We prop…
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Deep learning is a promising, ultra-fast approach for inverse design in nano-optics, but despite fast advancement of the field, the computational cost of dataset generation, as well as of the training procedure itself remains a major bottleneck. This is particularly inconvenient because new data need to be generated and a new network needs to be trained for any modification of the problem. We propose a technique that allows to train a single neural network on a broad range of design targets without any re-training. The key idea of our method is to enrich existing data with random "regions of interest" (ROI) labels. A model trained on such ROI-decorated data becomes capable to operate on a broad range of physical targets, while it learns to focus its design effort on a user-defined ROI, ignoring the rest of the physical domain. We demonstrate the method by training a tandem-network on the design of dielectric core-shell nano-spheres for electric and magnetic dipole and quadrupole scattering over a broad spectral range. The network learns to tailor very distinct, flexible design targets like scattering due to specific multipoles in narrow spectral windows. Varying the design problem does not require any re-training. Our approach is very general and can be directly used with existing datasets. It can be straightforwardly applied to other network architectures and problems.
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Submitted 4 August, 2022; v1 submitted 7 July, 2022;
originally announced July 2022.
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Generalizing the exact multipole expansion: Density of multipole modes in complex photonic nanostructures
Authors:
Clément Majorel,
Adelin Patoux,
Ana Estrada-Real,
Bernhard Urbaszek,
Christian Girard,
Arnaud Arbouet,
Peter R. Wiecha
Abstract:
The multipole expansion of a nano-photonic structure's electromagnetic response is a versatile tool to interpret optical effects in nano-optics, but it only gives access to the modes that are excited by a specific illumination. In particular the study of various illuminations requires multiple, costly numerical simulations. Here we present a formalism we call "generalized polarizabilities", in whi…
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The multipole expansion of a nano-photonic structure's electromagnetic response is a versatile tool to interpret optical effects in nano-optics, but it only gives access to the modes that are excited by a specific illumination. In particular the study of various illuminations requires multiple, costly numerical simulations. Here we present a formalism we call "generalized polarizabilities", in which we combine the recently developed exact multipole decomposition [Alaee et al., Opt. Comms. 407, 17-21 (2018)] with the concept of a generalized field propagator. After an initial computation step, our approach allows to instantaneously obtain the exact multipole decomposition for any illumination. Most importantly, since all possible illuminations are included in the generalized polarizabilities, our formalism allows to calculate the total density of multipole modes, regardless of a specific illumination, which is not possible with the conventional multipole expansion. Finally, our approach directly provides the optimum illumination field distributions that maximally couple to specific multipole modes. The formalism will be very useful for various applications in nano-optics like illumination-field engineering, or meta-atom design e.g. for Huygens metasurfaces. We provide a numerical open source implementation compatible with the pyGDM python package.
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Submitted 30 June, 2022; v1 submitted 28 April, 2022;
originally announced April 2022.
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Room Temperature Micro-Photoluminescence Studies of Colloidal WS2 Nanosheets
Authors:
André Philipp Frauendorf,
André Niebur,
Lena Harms,
Shivangi Shree,
Bernhard Urbaszek,
Michael Oestreich,
Jens Hübner,
Jannika Lauth
Abstract:
Wet-chemical syntheses for quasi two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as promising methods for straightforward solution-processing of these materials. However, photoluminescence properties of colloidal TMDs are virtually unexplored due to the typically non-emitting synthesis products. In this work, we demonstrate room temperature micro-photoluminescence of deli…
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Wet-chemical syntheses for quasi two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as promising methods for straightforward solution-processing of these materials. However, photoluminescence properties of colloidal TMDs are virtually unexplored due to the typically non-emitting synthesis products. In this work, we demonstrate room temperature micro-photoluminescence of delicate ultrathin colloidal WS2 nanosheets synthesized from WCl6 and elemental sulfur in oleic acid and oleylamine at 320 °C for the first time. Both, mono- and multilayer photoluminescence are observed, revealing comparable characteristics to exfoliated TMD monolayers and underpinning the high quality of colloidal WS2 nanosheets. In addition, a promising long-term air-stability of colloidal WS2 nanosheets is found and the control of photodegradation of the structures under laser excitation is identified as a challenge for further advancing nanosheet monolayers. Our results render colloidal TMDs as easily synthesized and highly promising 2D semiconductors with optical properties fully competitive with conventionally fabricated ultrathin TMDs.
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Submitted 16 July, 2021; v1 submitted 20 May, 2021;
originally announced May 2021.
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Probing dark exciton navigation through a local strain landscape in a WSe$_2$ monolayer
Authors:
Ryan J. Gelly,
Dylan Renaud,
Xing Liao,
Benjamin **ault,
Stefan Bogdanovic,
Giovanni Scuri,
Kenji Watanabe,
Takashi Taniguchi,
Bernhard Urbaszek,
Hongkun Park,
Marko Lončar
Abstract:
Monolayers of transition metal dichalcogenides (TMDs) have recently emerged as a promising optoelectronic platform. To leverage their full potential, however, it is important to understand and engineer the properties of the different exciton species that exist in these monolayers, as well as to control their transport through the material. A promising approach relies on engineering strain landscap…
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Monolayers of transition metal dichalcogenides (TMDs) have recently emerged as a promising optoelectronic platform. To leverage their full potential, however, it is important to understand and engineer the properties of the different exciton species that exist in these monolayers, as well as to control their transport through the material. A promising approach relies on engineering strain landscapes in atomically thin semiconductors that excitons navigate. In WSe$_2$ monolayers, for example, localized strain has been used to control the emission wavelength of excitons, induce exciton funneling and conversion, and even realize single-photon sources and quantum dots. Before these phenomena can be fully leveraged for applications, including quantum information processing, the details of excitons' interaction with the strain landscape must be well understood. To address this, we have developed a cryogenic technique capable of probing the dynamics of both bright and dark excitons in nanoscale strain landscapes in TMDs. In our approach, a nanosculpted tapered optical fiber is used to simultaneously generate strain and probe the near-field optical response of WSe$_2$ monolayers at 5 K. When the monolayer is pushed by the fiber, its lowest energy photoluminescence (PL) peaks red shift by as much as 390 meV, (corresponding to 20% of the bandgap of an unstrained WSe$_2$ monolayer). The red-shifting peaks are polarized perpendicularly to the WSe$_2$ plane and have long rising times (10 ps) and lifetimes (52 ps), indicating that they originate from nominally spin-forbidden dark excitons. Taken together, these observations indicate that dark excitons are funneled to the high-strain regions during their long lifetime and are the principal participants in drift and diffusion at cryogenic temperatures. Our work elucidates the important role that dark excitons play in locally strained WSe$_2$.
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Submitted 1 March, 2021;
originally announced March 2021.
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Electrical Detection of Light Helicity using a Quantum Dots based Hybrid Device at Zero Magnetic Field
Authors:
Fabian Cadiz,
Delphine Lagarde,
Bingshan Tao,
Julien Frougier,
Bo Xu,
Henri Jaffrès,
Zhanguo Wang,
Xiufeng Han,
Jean Marie George,
Hélène Carrere,
Andrea Balocchi,
Thierry Amand,
Xavier Marie,
Bernhard Urbaszek,
Yuan Lu,
Pierre Renucci
Abstract:
Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron spin relaxation time expected in these nano-objects. In these experiments, no external magnetic field is required thanks to the use of an ultrathin magnetic CoF…
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Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron spin relaxation time expected in these nano-objects. In these experiments, no external magnetic field is required thanks to the use of an ultrathin magnetic CoFeB/MgO electrode, presenting perpendicular magnetic anisotropy (PMA). We observe a clear asymmetry of the photocurrent measured under respective right and left polarized light that follows the hysteresis of the magnetic layer. The amplitude of this asymmetry at zero magnetic field decreases with increasing temperatures and can be controlled with the bias. Polarization-resolved photoluminescence is detected in parallel while the device is operated as a photodetector. This demonstrates the multifunctional capabilities of the device and gives valuable insights into the spin relaxation of the electrons in the quantum dots.
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Submitted 23 July, 2020;
originally announced July 2020.
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Guide to optical spectroscopy of layered semiconductors
Authors:
Shivangi Shree,
Ioannis Paradisanos,
Xavier Marie,
Cedric Robert,
Bernhard Urbaszek
Abstract:
In this technical review we give an introduction to optical spectroscopy for layered materials as a powerful, non-invasive tool to access details of the electronic band structure and crystal quality. Potential applications in photonics and optoelectronics are based on our understanding of the light-matter interaction on an atomic monolayer scale. Here atomically thin transition metal dichalcogenid…
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In this technical review we give an introduction to optical spectroscopy for layered materials as a powerful, non-invasive tool to access details of the electronic band structure and crystal quality. Potential applications in photonics and optoelectronics are based on our understanding of the light-matter interaction on an atomic monolayer scale. Here atomically thin transition metal dichalcogenides, such as MoS2 and WSe2, are model systems for layered semiconductors with a bandgap in the visible region of the optical spectrum. They can be assembled to form heterostructures and combine the unique properties of the constituent monolayers. We review the working principles of micro-photoluminescence spectroscopy and optical absorption experiments. We discuss the physical origin of the main absorption and emission features in the optical spectra and how they can be tuned. We explain key-aspects of practical set-ups for performing experiments in different conditions such as variable temperatures or in applied magnetic fields and how parameters such as detection spot size and excitation laser wavelength impact the optical spectra. We describe the important influence of the direct sample environment, such as substrates and encapsulation layers, on the emission and absorption mechanisms. A survey of optical techniques that probe the coupling between layers and analyse carrier polarisation dynamics for spin- and valleytronics is provided.
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Submitted 30 June, 2020;
originally announced June 2020.
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The physical origins of extreme cross-polarization extinction in confocal microscopy
Authors:
Meryem Benelajla,
Elena Kammann,
Bernhard Urbaszek,
Khaled Karrai
Abstract:
Confocal microscopy is an essential imaging tool for biological systems, in solid-state physics and nano-photonics. Using confocal microscopes allows performing resonant fluorescence experiments, where the emitted light has the same wavelength as the excitation laser. Theses challenging experiments are carried out under linear cross-polarization conditions, rejecting laser light from the detector.…
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Confocal microscopy is an essential imaging tool for biological systems, in solid-state physics and nano-photonics. Using confocal microscopes allows performing resonant fluorescence experiments, where the emitted light has the same wavelength as the excitation laser. Theses challenging experiments are carried out under linear cross-polarization conditions, rejecting laser light from the detector. In this work we uncover the physical mechanisms that are at the origin of the yet unexplained high polarization rejection ratio which makes these measurements possible. We show in both experiment and theory that the use of a reflecting surface (i.e. the beam-splitter and mirrors) placed between the polarizer and analyzer in combination with a confocal arrangement explains the giant cross-polarization extinction ratio of 10^8 and beyond. We map the modal transformation of the polarized optical Gaussian beam. We find an intensity 'hole' in the reflected beam under cross-polarization conditions. We interpret this as a manifestation of the Imbert-Fedorov effect, which deviates the beam depending on its polarization helicity. This implies that this topological effect is amplified here from the usually observed nanometer to the micrometer scale due to our cross-polarization dark field methods. We confirm these experimental findings for a large variety of commercially available mirrors and polarization components, allowing their practical implementation in many experiments.
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Submitted 8 July, 2020; v1 submitted 28 April, 2020;
originally announced April 2020.
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Control of the Exciton Radiative Lifetime in van der Waals Heterostructures
Authors:
H. H. Fang,
B. Han,
C. Robert,
M. A. Semina,
D. Lagarde,
E. Courtade,
T. Taniguchi,
K. Watanabe,
T. Amand,
B. Urbaszek,
M. M. Glazov,
X. Marie
Abstract:
Optical properties of atomically thin transition metal dichalcogenides are controlled by robust excitons characterized by a very large oscillator strength. Encapsulation of monolayers such as MoSe$_2$ in hexagonal boron nitride (hBN) yields narrow optical transitions approaching the homogenous exciton linewidth. We demonstrate that the exciton radiative rate in these van der Waals heterostructures…
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Optical properties of atomically thin transition metal dichalcogenides are controlled by robust excitons characterized by a very large oscillator strength. Encapsulation of monolayers such as MoSe$_2$ in hexagonal boron nitride (hBN) yields narrow optical transitions approaching the homogenous exciton linewidth. We demonstrate that the exciton radiative rate in these van der Waals heterostructures can be tailored by a simple change of the hBN encapsulation layer thickness as a consequence of the Purcell effect. The time-resolved photoluminescence measurements together with cw reflectivity and photoluminescence experiments show that the neutral exciton spontaneous emission time can be tuned by one order of magnitude depending on the thickness of the surrounding hBN layers. The inhibition of the radiative recombination can yield spontaneous emission time up to $10$~ps. These results are in very good agreement with the calculated recombination rate in the weak exciton-photon coupling regime. The analysis shows that we are also able to observe a sizeable enhancement of the exciton radiative decay rate. Understanding the role of these electrodynamical effects allow us to elucidate the complex dynamics of relaxation and recombination for both neutral and charged excitons.
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Submitted 15 July, 2019; v1 submitted 2 February, 2019;
originally announced February 2019.
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Enabling valley selective exciton scattering in monolayer WSe$_2$ through upconversion
Authors:
M. Manca,
M. M. Glazov,
C. Robert,
F. Cadiz,
T. Taniguchi,
K. Watanabe,
E. Courtade,
T. Amand,
P. Renucci,
X. Marie,
G. Wang,
B. Urbaszek
Abstract:
Excitons, Coulomb bound electron-hole pairs, are composite bosons and their interactions in traditional semiconductors lead to condensation and light amplification. The much stronger Coulomb interaction in transition metal dichalcogenides such as WSe$_2$ monolayers combined with the presence of the valley degree of freedom is expected to provide new opportunities for controlling excitonic effects.…
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Excitons, Coulomb bound electron-hole pairs, are composite bosons and their interactions in traditional semiconductors lead to condensation and light amplification. The much stronger Coulomb interaction in transition metal dichalcogenides such as WSe$_2$ monolayers combined with the presence of the valley degree of freedom is expected to provide new opportunities for controlling excitonic effects. But so far the bosonic character of exciton scattering processes remains largely unexplored in these two-dimensional (2D) materials. Here we show that scattering between B-excitons and A-excitons preferably happens within the same valley in momentum space. This leads to power dependent, negative polarization of the hot B-exciton emission. We use a selective upconversion technique for efficient generation of B-excitons in the presence of resonantly excited A-excitons at lower energy, we also observe the excited A-excitons state $2s$. Detuning of the continuous wave, low power laser excitation outside the A-exciton resonance (with a full width at half maximum of 4 meV) results in vanishing upconversion signal.
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Submitted 20 January, 2017;
originally announced January 2017.
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Ultra-low power threshold for laser induced changes in optical properties of 2D Molybdenum dichalcogenides
Authors:
Fabian Cadiz,
Cedric Robert,
Gang Wang,
Wilson Kong,
Xi Fan,
Mark Blei,
Delphine Lagarde,
Maxime Gay,
Marco Manca,
Takashi Taniguchi,
Kenji Watanabe,
Thierry Amand,
Xavier Marie,
Pierre Renucci,
Sefaattin Tongay,
Bernhard Urbaszek
Abstract:
The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical…
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The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical properties of 2D materials undergo irreversible changes. Most surprisingly these effects take place even at low steady state excitation, which is commonly thought to be non-intrusive. In low temperature photoluminescence (PL) we show for monolayer (ML) MoSe2 samples grown by different techniques that laser treatment increases significantly the trion (i.e. charged exciton) contribution to the emission compared to the neutral exciton emission. Comparison between samples exfoliated onto different substrates shows that laser induced do** is more efficient for ML MoSe2 on SiO2/Si compared to h-BN and gold. For ML MoS2 we show that exposure to laser radiation with an average power in the $μ$W/$μ$m$^2$ range does not just increase the trion-to-exciton PL emission ratio, but may result in the irreversible disappearance of the neutral exciton PL emission and a shift of the main PL peak to lower energy.
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Submitted 30 June, 2016;
originally announced June 2016.
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Controlling the polarization eigenstate of a quantum dot exciton with light
Authors:
Thomas Belhadj,
Claire-Marie Simon,
Thierry Amand,
Pierre Renucci,
Olivier Krebs,
Aristide Lemaitre,
Paul Voisin,
Xavier Marie,
Bernhard Urbaszek
Abstract:
We demonstrate optical control of the polarization eigenstates of a neutral quantum dot exciton without any external fields. By varying the excitation power of a circularly polarized laser in micro-photoluminescence experiments on individual InGaAs quantum dots we control the magnitude and direction of an effective internal magnetic field created via optical pum** of nuclear spins. The adjusta…
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We demonstrate optical control of the polarization eigenstates of a neutral quantum dot exciton without any external fields. By varying the excitation power of a circularly polarized laser in micro-photoluminescence experiments on individual InGaAs quantum dots we control the magnitude and direction of an effective internal magnetic field created via optical pum** of nuclear spins. The adjustable nuclear magnetic field allows us to tune the linear and circular polarization degree of the neutral exciton emission. The quantum dot can thus act as a tunable light polarization converter.
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Submitted 27 March, 2009;
originally announced March 2009.
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Optically monitored nuclear spin dynamics in individual GaAs quantum dots grown by droplet epitaxy
Authors:
Thomas Belhadj,
Takashi Kuroda,
Claire-Marie Simon,
Thierry Amand,
Takaaki Mano,
Kazuaki Sakoda,
Nobuyuki Koguchi,
Xavier Marie,
Bernhard Urbaszek
Abstract:
We report optical orientation experiments in individual, strain free GaAs quantum dots in AlGaAs grown by droplet epitaxy. Circularly polarized optical excitation yields strong circular polarization of the resulting photoluminescence at 4K. Optical injection of spin polarized electrons into a dot gives rise to dynamical nuclear polarization that considerably changes the exciton Zeeman splitting…
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We report optical orientation experiments in individual, strain free GaAs quantum dots in AlGaAs grown by droplet epitaxy. Circularly polarized optical excitation yields strong circular polarization of the resulting photoluminescence at 4K. Optical injection of spin polarized electrons into a dot gives rise to dynamical nuclear polarization that considerably changes the exciton Zeeman splitting (Overhauser shift). We show that the created nuclear polarization is bistable and present a direct measurement of the build-up time of the nuclear polarization in a single GaAs dot in the order of one second.
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Submitted 6 October, 2008; v1 submitted 30 June, 2008;
originally announced June 2008.
