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Photonic probabilistic machine learning using quantum vacuum noise
Authors:
Seou Choi,
Yannick Salamin,
Charles Roques-Carmes,
Rumen Dangovski,
Di Luo,
Zhuo Chen,
Michael Horodynski,
Jamison Sloan,
Shiekh Zia Uddin,
Marin Soljacic
Abstract:
Probabilistic machine learning utilizes controllable sources of randomness to encode uncertainty and enable statistical modeling. Harnessing the pure randomness of quantum vacuum noise, which stems from fluctuating electromagnetic fields, has shown promise for high speed and energy-efficient stochastic photonic elements. Nevertheless, photonic computing hardware which can control these stochastic…
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Probabilistic machine learning utilizes controllable sources of randomness to encode uncertainty and enable statistical modeling. Harnessing the pure randomness of quantum vacuum noise, which stems from fluctuating electromagnetic fields, has shown promise for high speed and energy-efficient stochastic photonic elements. Nevertheless, photonic computing hardware which can control these stochastic elements to program probabilistic machine learning algorithms has been limited. Here, we implement a photonic probabilistic computer consisting of a controllable stochastic photonic element - a photonic probabilistic neuron (PPN). Our PPN is implemented in a bistable optical parametric oscillator (OPO) with vacuum-level injected bias fields. We then program a measurement-and-feedback loop for time-multiplexed PPNs with electronic processors (FPGA or GPU) to solve certain probabilistic machine learning tasks. We showcase probabilistic inference and image generation of MNIST-handwritten digits, which are representative examples of discriminative and generative models. In both implementations, quantum vacuum noise is used as a random seed to encode classification uncertainty or probabilistic generation of samples. In addition, we propose a path towards an all-optical probabilistic computing platform, with an estimated sampling rate of ~ 1 Gbps and energy consumption of ~ 5 fJ/MAC. Our work paves the way for scalable, ultrafast, and energy-efficient probabilistic machine learning hardware.
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Submitted 7 March, 2024;
originally announced March 2024.
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Measuring Power with a Saturated Photodiode
Authors:
Shiekh Zia Uddin
Abstract:
Accurate measurement of optical power is pivotal in many applications and scientific research. However, traditional power meters are unable to measure power levels beyond a certain saturation point, limiting their usefulness in high-power applications. In this technical note, I discuss how optical power can be measured using a saturated photodiode. I demonstrate that by monitoring both the dc phot…
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Accurate measurement of optical power is pivotal in many applications and scientific research. However, traditional power meters are unable to measure power levels beyond a certain saturation point, limiting their usefulness in high-power applications. In this technical note, I discuss how optical power can be measured using a saturated photodiode. I demonstrate that by monitoring both the dc photocurrent and ac noise, it is possible to accurately measure power levels beyond its saturation point.
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Submitted 7 January, 2023;
originally announced January 2023.
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Inhibited nonradiative decay at all exciton densities in monolayer semiconductors
Authors:
Hyung** Kim,
Shiekh Zia Uddin,
Naoki Higashitarumizu,
Eran Rabani,
Ali Javey
Abstract:
Most optoelectronic devices operate at high photocarrier densities, where all semiconductors suffer from enhanced nonradiative recombination. Nonradiative processes proportionately reduce photoluminescence (PL) quantum yield (QY), a performance metric that directly dictates the maximum device efficiency. Although transition-metal dichalcogenide (TMDC) monolayers exhibit near-unity PL QY at low exc…
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Most optoelectronic devices operate at high photocarrier densities, where all semiconductors suffer from enhanced nonradiative recombination. Nonradiative processes proportionately reduce photoluminescence (PL) quantum yield (QY), a performance metric that directly dictates the maximum device efficiency. Although transition-metal dichalcogenide (TMDC) monolayers exhibit near-unity PL QY at low exciton densities, nonradiative exciton-exciton annihilation (EEA) enhanced by van-Hove singularity (VHS) rapidly degrades their PL QY at high exciton densities and limits their utility in practical applications. Here, by applying small mechanical strain (< 1%), we circumvent VHS resonance and drastically suppress EEA in monolayer TMDCs, resulting in near-unity PL QY at all exciton densities despite the presence of a high native defect density. Our findings can enable light-emitting devices that retain high efficiency at all brightnesses.
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Submitted 22 July, 2021;
originally announced July 2021.
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Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors
Authors:
Der-Hsien Lien,
Shiekh Zia Uddin,
Matthew Yeh,
Matin Amani,
Hyung** Kim,
Joel W. Ager III,
Eli Yablonovitch,
Ali Javey
Abstract:
Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional (2D) transition metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect…
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Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional (2D) transition metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density. We show that the PL QY of as-processed MoS2 and WS2 monolayers reaches near-unity when they are made intrinsic by electrostatic do**, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.
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Submitted 8 May, 2019;
originally announced May 2019.
