Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs
Authors:
Kwan-Ho Kim,
Seyong Oh,
Merrilyn Mercy Adzo Fiagbenu,
Jeffrey Zheng,
Pariasadat Musavigharavi,
Pawan Kumar,
Nicholas Trainor,
Areej Aljarb,
Yi Wan,
Hyong Min Kim,
Keshava Katti,
Zichen Tang,
Vincent C. Tung,
Joan Redwing,
Eric A. Stach,
Roy H. Olsson III,
Deep Jariwala
Abstract:
Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field…
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Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field Effect Transistors (FE-FETs) are a promising candidate but their scalability and performance in a back-end-of-line (BEOL) process remain unattained. Here, we present scalable BEOL compatible FE-FETs using two-dimensional (2D) MoS2 channel and AlScN ferroelectric dielectric. We have fabricated a large array of FE-FETs with memory windows larger than 7.8 V, ON/OFF ratios of greater than 10^7, and ON current density greater than 250 uA/um, all at ~80 nm channel lengths. Our devices show stable retention up to 20000 secs and endurance up to 20000 cycles in addition to 4-bit pulse programmable memory features thereby opening a path towards scalable 3D hetero-integration of 2D semiconductor memory with Si CMOS logic.
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Submitted 6 January, 2022;
originally announced January 2022.
