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Surface-Sensitive Raman Scattering by Transferable Nanoporous Plasmonic Membranes
Authors:
Roman M. Wyss,
Günter Kewes,
Martin Frimmer,
Karl-Philipp Schlichting,
Markus Parzefall,
Eric Bonvin,
Martin F. Sarott,
Morgan Trassin,
Lala Habibova,
Giorgia Marcelli,
Jan Vermant,
Lukas Novotny,
Mads C. Weber,
Sebastian Heeg
Abstract:
Raman spectroscopy is a powerful technique to characterize materials. It probes non-destructively chemical composition, crystallinity, defects, strain and coupling phenomena. However, the Raman response of surfaces or thin films is often weak and obscured by dominant bulk signals. Here we overcome this limitation by placing a transferable porous gold membrane (PAuM) on top of the surface of intere…
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Raman spectroscopy is a powerful technique to characterize materials. It probes non-destructively chemical composition, crystallinity, defects, strain and coupling phenomena. However, the Raman response of surfaces or thin films is often weak and obscured by dominant bulk signals. Here we overcome this limitation by placing a transferable porous gold membrane (PAuM) on top of the surface of interest. Slot-like nanopores in the membrane act as plasmonic slot antennas and enhance the Raman response of the surface or thin film underneath. Simultaneously, the PAuM suppresses the penetration of the excitation laser into the bulk, efficiently blocking the bulk Raman signal. Using graphene as a model surface, we show that these two simultaneous effects lead to an increase in the surface-to-bulk Raman signal ratio by three orders of magnitude. We find that 90% of the Raman enhancement occurs within the top 2.5 of the material, demonstrating truly surface-sensitive Raman scattering. To validate our approach, we analyze the surface of a LaNiO3 thin film. We observe a Raman mode splitting for the LaNiO3 surface-layer, which is spectroscopic evidence that the surface structure differs from the bulk. This result underpins that PAuM give direct access to Raman signatures of surfaces and their structural properties.
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Submitted 10 January, 2023;
originally announced January 2023.
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Inversion-symmetry engineering in sub-unit-cell-layered oxide thin films
Authors:
J. Nordlander,
M. D. Rossell,
M. Campanini,
M. Fiebig,
M. Trassin
Abstract:
Inversion symmetry breaking is a ubiquitous concept in condensed-matter science. On the one hand, it is a prerequisite for many technologically relevant effects such as piezoelectricity, photovoltaic and nonlinear optical properties and spin-transport phenomena. On the other hand, it may determine abstract properties such as the electronic topology in quantum materials. Therefore, the creation of…
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Inversion symmetry breaking is a ubiquitous concept in condensed-matter science. On the one hand, it is a prerequisite for many technologically relevant effects such as piezoelectricity, photovoltaic and nonlinear optical properties and spin-transport phenomena. On the other hand, it may determine abstract properties such as the electronic topology in quantum materials. Therefore, the creation of materials where inversion symmetry can be turned on or off by design may be the ultimate route towards controlling parity-related phenomena and functionalities. Here, we engineer the symmetry of ultrathin epitaxial oxide films by sub-unit-cell growth control. We reversibly activate and deactivate inversion symmetry in the layered hexagonal manganites, h-RMnO$_3$ with R = Y, Er, Tb. While an odd number of half-unit-cell layers exhibits a breaking of inversion symmetry through its arrangement of MnO$_5$ bipyramids, an even number of such half-unit-cell layers takes on a centrosymmetric structure. Here we control the resulting symmetry by tracking the growth in situ via optical second-harmonic generation. We furthermore demonstrate that our symmetry engineering works independent of the choice of R and even in heterostructures mixing constituents with different R in a two-dimensional growth mode. Symmetry engineering on the atomic level thus suggests a new platform for the controlled activation and deactivation of symmetry-governed functionalities in oxide-electronic epitaxial thin films.
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Submitted 18 May, 2020;
originally announced May 2020.
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Magnetic properties and domain structure of ultrathin yttrium iron garnet/Pt bilayers
Authors:
Johannes Mendil,
Morgan Trassin,
Qingqing Bu,
Jakob Schaab,
Manuel Baumgartner,
Christoph Murer,
Phuong T. Dao,
Jaianth Vijayakumar,
David Bracher,
Corinne Bouillet,
Carlos A. F. Vaz,
Manfred Fiebig,
Pietro Gambardella
Abstract:
We report on the structure, magnetization, magnetic anisotropy, and domain morphology of ultrathin yttrium iron garnet (YIG)/Pt films with thickness ranging from 3 to 90 nm. We find that the saturation magnetization is close to the bulk value in the thickest films and decreases towards low thickness with a strong reduction below 10 nm. We characterize the magnetic anisotropy by measuring the trans…
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We report on the structure, magnetization, magnetic anisotropy, and domain morphology of ultrathin yttrium iron garnet (YIG)/Pt films with thickness ranging from 3 to 90 nm. We find that the saturation magnetization is close to the bulk value in the thickest films and decreases towards low thickness with a strong reduction below 10 nm. We characterize the magnetic anisotropy by measuring the transverse spin Hall magnetoresistance as a function of applied field. Our results reveal strong easy plane anisotropy fields of the order of 50-100 mT, which add to the demagnetizing field, as well as weaker in-plane uniaxial anisotropy ranging from 10 to 100 $μ$T. The in-plane easy axis direction changes with thickness, but presents also significant fluctuations among samples with the same thickness grown on the same substrate. X-ray photoelectron emission microscopy reveals the formation of zigzag magnetic domains in YIG films thicker than 10 nm, which have dimensions larger than several 100 $μ$m and are separated by achiral Néel-type domain walls. Smaller domains characterized by interspersed elongated features are found in YIG films thinner than 10 nm.
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Submitted 19 March, 2019;
originally announced March 2019.
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High-speed domain wall racetracks in a magnetic insulator
Authors:
Saül Vélez,
Jakob Schaab,
Martin S. Wörnle,
Marvin Müller,
Elzbieta Gradauskaite,
Pol Welter,
Cameron Gutgsell,
Corneliu Nistor,
Christian L. Degen,
Morgan Trassin,
Manfred Fiebig,
Pietro Gambardella
Abstract:
Recent reports of current-induced switching of ferrimagnetic oxides coupled to a heavy metal layer have opened realistic prospects for implementing magnetic insulators into electrically addressable spintronic devices. However, key aspects such as the configuration and dynamics of magnetic domain walls driven by electrical currents in insulating oxides remain unexplored. Here, we investigate the in…
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Recent reports of current-induced switching of ferrimagnetic oxides coupled to a heavy metal layer have opened realistic prospects for implementing magnetic insulators into electrically addressable spintronic devices. However, key aspects such as the configuration and dynamics of magnetic domain walls driven by electrical currents in insulating oxides remain unexplored. Here, we investigate the internal structure of the domain walls in Tm3Fe5O12 (TmIG) and TmIG/Pt bilayers and demonstrate their efficient manipulation by spin-orbit torques with velocities of up to 400 m s$^{-1}$ and minimal current threshold for domain wall flow of 5 x 10$^{6}$ A cm$^{-2}$. Domain wall racetracks embedded in TmIG are defined by the deposition of Pt current lines, which allow us to control the domain propagation and magnetization switching in selected regions of an extended magnetic layer. Scanning nitrogen-vacancy magnetometry reveals that the domain walls of thin TmIG films are Néel walls with left-handed chirality, with the domain wall magnetization rotating towards an intermediate Néel-Bloch configuration upon deposition of Pt. These results indicate the presence of a sizable interfacial Dzyaloshinskii-Moriya interaction in TmIG, which leads to novel possibilities to control the formation of chiral spin textures in magnetic insulators. Ultimately, domain wall racetracks provide an efficient scheme to pattern the magnetic landscape of TmIG in a fast and reversible way
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Submitted 14 February, 2019;
originally announced February 2019.
