Ultralow voltage, High-speed, and Energy-efficient Cryogenic Electro-Optic Modulator
Authors:
Paolo Pintus,
Anshuman Singh,
Weiqiang Xie,
Leonardo Ranzani,
Martin V. Gustafsson,
Minh A. Tran,
Chao Xiang,
Jonathan Peters,
John E. Bowers,
Moe Soltani
Abstract:
Photonic integrated circuits (PICs) at cryogenic temperatures enable a wide range of applications in scalable classical and quantum systems for computing and sensing. A promising application of cryogenic PICs is to provide optical interconnects by up-converting signals from electrical to optical domain, allowing massive data-transfer from 4 K superconducting (SC) electronics to room temperature en…
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Photonic integrated circuits (PICs) at cryogenic temperatures enable a wide range of applications in scalable classical and quantum systems for computing and sensing. A promising application of cryogenic PICs is to provide optical interconnects by up-converting signals from electrical to optical domain, allowing massive data-transfer from 4 K superconducting (SC) electronics to room temperature environment. Such a solution is central to overcome the major bottleneck in the scalability of cryogenic systems, which currently rely on bulky copper cables that suffer from limited bandwidth, large heat load, and do not show any scalability path. A key element for realizing a cryogenic-to-room temperature optical interconnect is a high-speed electro-optic (EO) modulator operating at 4 K with operation voltage at mV scale, compatible with SC electronics. Although several cryogenic EO modulators have been demonstrated, their driving voltages are significantly large compared to the mV scale voltage required for SC circuits. Here, we demonstrate a cryogenic modulator with ~10 mV peak-to-peak driving voltage and gigabits/sec data rate, with ultra-low electric and optical energy consumptions of ~10.4 atto-joules/bit and ~213 femto-joules/bit, respectively. We achieve this record performance by designing a compact optical ring resonator modulator in a heterogeneous InP-on-Silicon platform, where we optimize a multi-quantum well layer of InAIGaAs to achieve a strong EO effect at 4 K. Unlike other semiconductors such as silicon, our platform benefits from the high-carrier mobility and minimal free carrier freezing of III-V compounds at low temperatures, with moderate do** level and low loss (intrinsic resonator Q~272,000). These modulators can pave the path for complex cryogenic photonic functionalities and massive data transmission between cryogenic and room-temperature electronics.
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Submitted 7 July, 2022;
originally announced July 2022.
Ultraprecise optical-frequency stabilization with heterogeneous III-V/Si lasers
Authors:
Liron Stern,
Wei Zhang,
Lin Chang,
Joel Guo,
Chao Xiang,
Minh A. Tran,
Duanni Huang,
Jonathan D. Peters,
David Kinghorn,
John E. Bowers,
Scott B. Papp
Abstract:
Demand for low-noise, continuous-wave, frequency-tunable lasers based on semiconductor integrated photonics has been advancing in support of numerous applications. In particular, an important goal is to achieve narrow spectral linewidth, commensurate with bulk-optic or fiber-optic laser platforms. Here, we report on laser-frequency-stabilization experiments with a heterogeneously integrated III/V-…
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Demand for low-noise, continuous-wave, frequency-tunable lasers based on semiconductor integrated photonics has been advancing in support of numerous applications. In particular, an important goal is to achieve narrow spectral linewidth, commensurate with bulk-optic or fiber-optic laser platforms. Here, we report on laser-frequency-stabilization experiments with a heterogeneously integrated III/V-Si widely tunable laser and a high-finesse, thermal-noise-limited photonic resonator. This hybrid architecture offers a chip-scale optical-frequency reference with an integrated linewidth of 60 Hz and a fractional frequency stability of 2.5e-13 at 1-second integration time. We explore the potential for stabilization with respect to a resonator with lower thermal noise by characterizing laser-noise contributions such as residual amplitude modulation and photodetection noise. Widely tunable, compact and integrated, cost effective, stable and narrow linewidth lasers are envisioned for use in various fields, including communication, spectroscopy, and metrology.
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Submitted 4 July, 2020;
originally announced July 2020.
