Radiation hardness of GaAs: Cr and Si sensors irradiated by electron beam
Authors:
U. Kruchonak,
S. Abou El-Azm,
K. Afanaciev,
G. Chelkov,
M. Demichev,
M. Gostkin,
A. Guskov,
E. Firu,
V. Kobets,
A. Leyva,
d,
A. Nozdrin,
S. Porokhovoy,
A. Sheremetyeva,
P. Smolyanskiy,
A. Torres,
A. Tyazhev,
O. Tolbanov,
N. Zamyatin,
A. Zarubin,
A. Zhemchugov
Abstract:
The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical materials. High radiation hardness at room temperature stands out and needs to be systematically investigated. In this paper an experimental study of the effect of 20…
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The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical materials. High radiation hardness at room temperature stands out and needs to be systematically investigated. In this paper an experimental study of the effect of 20.9 MeV electrons generated by the LINAC-200 accelerator on some properties of GaAs:Cr based sensors is presented. In parallel, Si sensors were irradiated at the same conditions, measured and analyzed in order to perform a comparative study. The target sensors were irradiated with the dose up to 1.5 MGy. The current-voltage characteristics, resistivity, charge collection efficiency and their dependences on the bias voltage and temperature were measured at different absorbed doses. An analysis of the possible microscopic mechanisms leading to the observed effects in GaAs:Cr sensors is presented in the article.
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Submitted 1 June, 2020;
originally announced June 2020.
Space charge formation in chromium compensated GaAs radiation detectors
Authors:
E. Belas,
R. Grill,
J. Pipek,
P. Praus,
J. Bok,
A. Musiienko,
P. Moravec,
O. Tolbanov,
A. Tyazhev,
A. Zarubin
Abstract:
Space charge formation in chromium-compensated GaAs sensors is investigated by the laser-induced transient current technique applying pulsed and DC bias. Formation of non-standard space charge manifested by an appearance of both negatively and positively charged regions in DC biased sensors was revealed during 5 ms after switching bias. Using Monte Carlo simulations of current transients we determ…
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Space charge formation in chromium-compensated GaAs sensors is investigated by the laser-induced transient current technique applying pulsed and DC bias. Formation of non-standard space charge manifested by an appearance of both negatively and positively charged regions in DC biased sensors was revealed during 5 ms after switching bias. Using Monte Carlo simulations of current transients we determined enhanced electron lifetime τ = 150 ns and electron drift mobility μd = 3650 cm2/Vs. We developed and successfully applied theoretical model based on fast hole trap** in the system with spatially variable hole conductivity.
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Submitted 3 April, 2020; v1 submitted 8 January, 2020;
originally announced January 2020.
