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Broadband Entangled-Photon Pair Generation with Integrated Photonics: Guidelines and A Materials Comparison
Authors:
Liao Duan,
Trevor J. Steiner,
Paolo Pintus,
Lillian Thiel,
Joshua E. Castro,
John E. Bowers,
Galan Moody
Abstract:
Correlated photon-pair sources are key components for quantum computing, networking, and sensing applications. Integrated photonics has enabled chip-scale sources using nonlinear processes, producing high-rate entanglement with sub-100 microwatt power at telecom wavelengths. Many quantum systems operate in the visible or near-infrared ranges, necessitating broadband visible-telecom entangled-pair…
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Correlated photon-pair sources are key components for quantum computing, networking, and sensing applications. Integrated photonics has enabled chip-scale sources using nonlinear processes, producing high-rate entanglement with sub-100 microwatt power at telecom wavelengths. Many quantum systems operate in the visible or near-infrared ranges, necessitating broadband visible-telecom entangled-pair sources for connecting remote systems via entanglement swap** and teleportation. This study evaluates broadband entanglement generation through spontaneous four-wave mixing in various nonlinear integrated photonic materials, including silicon nitride, lithium niobate, aluminum gallium arsenide, indium gallium phosphide, and gallium nitride. We demonstrate how geometric dispersion engineering facilitates phase-matching for each platform and reveals unexpected results, such as robust designs to fabrication variations and a Type-1 cross-polarized phase-matching condition for III-V materials that expands the operational bandwidth. With experimentally attainable parameters, integrated photonic microresonators with optimized designs can achieve pair generation rates greater than ~1 THz/mW$^2$.
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Submitted 5 July, 2024;
originally announced July 2024.
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Wafer-Scale Fabrication of InGaP-on-Insulator for Nonlinear and Quantum Photonic Applications
Authors:
Lillian Thiel,
Joshua E. Castro,
Trevor J. Steiner,
Catherine L. Nguyen,
Audrey Pechilis,
Liao Duan,
Nicholas Lewis,
Garrett D. Cole,
John E. Bowers,
Galan Moody
Abstract:
The development of manufacturable and scalable integrated nonlinear photonic materials is driving key technologies in diverse areas such as high-speed communications, signal processing, sensing, and quantum information. Here, we demonstrate a novel nonlinear platform -- InGaP-on-insulator -- optimized for visible-to-telecommunication wavelength $χ^{\left(2\right)}$ nonlinear optical processes. In…
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The development of manufacturable and scalable integrated nonlinear photonic materials is driving key technologies in diverse areas such as high-speed communications, signal processing, sensing, and quantum information. Here, we demonstrate a novel nonlinear platform -- InGaP-on-insulator -- optimized for visible-to-telecommunication wavelength $χ^{\left(2\right)}$ nonlinear optical processes. In this work, we detail our 100-mm wafer-scale InGaP-on-insulator fabrication process realized via wafer bonding, optical lithography, and dry-etching techniques. The resulting wafers yield 1000s of components in each fabrication cycle, with initial designs that include chip-to-fiber couplers, 12.5-cm-long nested spiral waveguides, and arrays of microring resonators with free-spectral ranges spanning 400-900 GHz. We demonstrate intrinsic resonator quality factors as high as 324,000 (440,000) for single-resonance (split-resonance) modes near 1550 nm corresponding to 1.56 dB cm$^{-1}$ (1.22 dB cm$^{-1}$) propagation loss. We analyze the loss versus waveguide width and resonator radius to establish the operating regime for optimal 775-to-1550 nm phase matching. By combining the high $χ^{\left(2\right)}$ and $χ^{\left(3\right)}$ optical nonlinearity of InGaP with wafer-scale fabrication and low propagation loss, these results open promising possibilities for entangled-photon, multi-photon, and squeezed light generation.
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Submitted 26 June, 2024;
originally announced June 2024.
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Expanding the Quantum Photonic Toolbox in AlGaAsOI
Authors:
Joshua E. Castro,
Trevor J. Steiner,
Lillian Thiel,
Alex Dinkelacker,
Corey McDonald,
Paolo Pintus,
Lin Chang,
John E. Bowers,
Galan Moody
Abstract:
Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large $χ^\left(2\right)$ and $χ^\left(3\right)$ optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it an exciting platform for integrated quantum photonics. With ultrabright sources of quantum light established in AlGaAsOI, the next step is to develop the critical bu…
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Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large $χ^\left(2\right)$ and $χ^\left(3\right)$ optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it an exciting platform for integrated quantum photonics. With ultrabright sources of quantum light established in AlGaAsOI, the next step is to develop the critical building blocks for chip-scale quantum photonic circuits. Here we expand the quantum photonic toolbox for AlGaAsOI by demonstrating edge couplers, 3-dB splitters, tunable interferometers, and waveguide crossings with performance comparable to or exceeding silicon and silicon-nitride quantum photonic platforms. As a demonstration, we demultiplex photonic qubits through an unbalanced interferometer, paving the route toward ultra-efficient and high-rate chip-scale demonstrations of photonic quantum computation and information applications.
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Submitted 13 May, 2022;
originally announced May 2022.
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Target-wavelength-trimmed second harmonic generation with gallium phosphide-on-nitride ring resonators
Authors:
Lillian Thiel,
Alan D. Logan,
Srivatsa Chakravarthi,
Shivangi Shree,
Karine Hestroffer,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between the electron-beam exposure dose and resonant wavelength red-shift enables deterministic, individual trimming of multiple devices on the same chip to within 30 pm…
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We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between the electron-beam exposure dose and resonant wavelength red-shift enables deterministic, individual trimming of multiple devices on the same chip to within 30 pm of a single target wavelength. Second harmonic generation from telecom to near infrared at a target wavelength is shown in multiple devices with quality factors on the order of $10^4$. Post-fabrication tuning is an essential tool for targeted wavelength applications including quantum frequency conversion
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Submitted 8 October, 2021; v1 submitted 7 October, 2021;
originally announced October 2021.
