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Ferroelectric HfO$_2$ Memory Transistors with High-$κ$ Interfacial Layer and Write Endurance Exceeding $10^{10}$ Cycles
Authors:
Ava Jiang Tan,
Yu-Hung Liao,
Li-Chen Wang,
Jong-Ho Bae,
Chenming Hu,
Sayeef Salahuddin
Abstract:
We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding $10^{10}$ cycles. The ferroelectric transistors (FeFETs) incorporate a high-$κ$ interfacial layer (IL) of thermally grown silicon nitride (SiN$_x$) and a thin 4.5 nm layer of Zr-doped FE-HfO$_2$ on a $\sim$30 nm SOI channel. The device shows a $\sim$ 1V memory window in a DC sweep of just…
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We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding $10^{10}$ cycles. The ferroelectric transistors (FeFETs) incorporate a high-$κ$ interfacial layer (IL) of thermally grown silicon nitride (SiN$_x$) and a thin 4.5 nm layer of Zr-doped FE-HfO$_2$ on a $\sim$30 nm SOI channel. The device shows a $\sim$ 1V memory window in a DC sweep of just $\pm$ 2.5V, and can be programmed and erased with voltage pulses of $V_G= \pm$ 3V at a pulse width of 250 ns. The device also shows very good retention behavior. These results indicate that appropriate engineering of the IL layer could substantially improve FeFET device performance and reliability.
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Submitted 15 March, 2021;
originally announced March 2021.
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Anomalous Subthreshold Behaviors in Negative Capacitance Transistors
Authors:
Yu-Hung Liao,
Daewoong Kwon,
Suraj Cheema,
Ava J. Tan,
Ming-Yen Kao,
Li-Chen Wang,
Chenming Hu,
Sayeef Salahuddin
Abstract:
Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, subthreshold swing was found to decrease with increased gate bias in the subthreshold region for devices measured over multiple gate lengths down to 30 nm. In addition, improvement in the subthreshold swing relative to con…
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Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, subthreshold swing was found to decrease with increased gate bias in the subthreshold region for devices measured over multiple gate lengths down to 30 nm. In addition, improvement in the subthreshold swing relative to control devices showed a non-monotonic dependence on the gate length. In this paper, using a Landau-Khanatnikov ferroelectric gate stack model calibrated with measured Capacitance-Voltage, we show that both these anomalous behaviors can be quantitatively reproduced with TCAD simulations.
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Submitted 3 June, 2020;
originally announced June 2020.
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Fast magneto-ionic switching of interface anisotropy using yttria-stabilized zirconia gate oxide
Authors:
Ki-Young Lee,
Su** Jo,
Aik Jun Tan,
Mantao Huang,
Dongwon Choi,
Jung Hoon Park,
Ho-Il Ji,
Ji-Won Son,
Joonyeon Chang,
Geoffrey S. D. Beach,
Seonghoon Woo
Abstract:
Voltage control of interfacial magnetism has been greatly highlighted in spintronics research for many years, as it might enable ultra-low power technologies. Among few suggested approaches, magneto-ionic control of magnetism has demonstrated large modulation of magnetic anisotropy. Moreover, the recent demonstration of magneto-ionic devices using hydrogen ions presented relatively fast magnetizat…
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Voltage control of interfacial magnetism has been greatly highlighted in spintronics research for many years, as it might enable ultra-low power technologies. Among few suggested approaches, magneto-ionic control of magnetism has demonstrated large modulation of magnetic anisotropy. Moreover, the recent demonstration of magneto-ionic devices using hydrogen ions presented relatively fast magnetization toggle switching, tsw ~ 100 ms, at room temperature. However, the operation speed may need to be significantly improved to be used for modern electronic devices. Here, we demonstrate that the speed of proton-induced magnetization toggle switching largely depends on proton-conducting oxides. We achieve ~1 ms reliable (> 103 cycles) switching using yttria-stabilized zirconia (YSZ), which is ~ 100 times faster than the state-of-the-art magneto-ionic devices reported to date at room temperature. Our results suggest further engineering of the proton-conducting materials could bring substantial improvement that may enable new low-power computing scheme based on magneto-ionics.
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Submitted 5 May, 2020;
originally announced May 2020.
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Understanding the role of transport velocity in biomotor-powered microtubule spool assembly
Authors:
Amanda J. Tan,
Dail E. Chapman,
Linda S. Hirst,
**g Xu
Abstract:
We examined the sensitivity of microtubule spools to transport velocity. Perhaps surprisingly, we determined that the steady-state number and size of spools remained constant over a seven-fold range of velocities. Our data on the kinetics of spool assembly further suggest that the main mechanisms underlying spool growth vary during assembly.
We examined the sensitivity of microtubule spools to transport velocity. Perhaps surprisingly, we determined that the steady-state number and size of spools remained constant over a seven-fold range of velocities. Our data on the kinetics of spool assembly further suggest that the main mechanisms underlying spool growth vary during assembly.
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Submitted 6 October, 2016;
originally announced October 2016.
