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Observation of an Abrupt 3D-2D Morphological Transition in Thin Al Layers Grown by MBE on InGaAs surface
Authors:
A. Elbaroudy,
B. Khromets,
F. Sfigakis,
E. Bergeron,
Y. Shi,
M. C. A. Tam,
T. Blaikie,
George Nichols,
J. Baugh,
Z. R. Wasilewski
Abstract:
Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, and large Landé g-factor of InAs, coupled with the relatively high value of the in-plane critical magnetic field in thin Al films. However, growing a th…
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Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, and large Landé g-factor of InAs, coupled with the relatively high value of the in-plane critical magnetic field in thin Al films. However, growing a thin, continuous Al layer using the Molecular Beam Epitaxy (MBE) is challenging due to aluminum's high surface mobility and tendency for 3D nucleation on semiconductor surfaces. A study of epitaxial Al thin film growth on In0.75Ga0.25As with MBE is presented, focusing on the effects of the Al growth rate and substrate temperature on the nucleation of Al layers. We find that for low deposition rates, 0.1 Å/s and 0.5 Å/s, the growth continues in 3D mode during the deposition of the nominal 100 Å of Al, resulting in isolated Al islands. However, for growth rates of 1.5 Å/s and above, the 3D growth mode quickly transitions into island coalescence, leading to a uniform 2D Al layer. Moreover, this transition is very abrupt, happening over an Al flux increase of less than 1%. We discuss the growth mechanisms explaining these observations. The results give new insights into the kinetics of Al deposition and show that with sufficiently high Al flux, a 2D growth on substrates at close to room temperature can be achieved already within the first few Al monolayers. This eliminates the need for complex cryogenic substrate cooling and paves the way for the development of high-quality superconductor-semiconductor interfaces in standard MBE systems.
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Submitted 19 April, 2024; v1 submitted 27 January, 2024;
originally announced January 2024.
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Terahertz semiconductor laser source at -12 C
Authors:
Ali Khalatpour,
Man Chun Tam,
Sadhvikas J. Addamane,
John Reno,
Zbig Wasilewski,
Qing Hu
Abstract:
Room temperature operation of Terahertz Quantum Cascade Lasers (THz QCLs) has been a long-pursued goal to realize compact semiconductor THz sources. The progress toward high-temperature operation in THz QCLs has been relatively slow compared to infrared QCLs owing to more significant challenges at THz frequencies. Recently, the maximum operating temperature of THz QCLs was improved to 250 K, and t…
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Room temperature operation of Terahertz Quantum Cascade Lasers (THz QCLs) has been a long-pursued goal to realize compact semiconductor THz sources. The progress toward high-temperature operation in THz QCLs has been relatively slow compared to infrared QCLs owing to more significant challenges at THz frequencies. Recently, the maximum operating temperature of THz QCLs was improved to 250 K, and the achievement revitalized hope in the THz community in pursuit of higher temperature operations. In this paper, we report on further improvement in operating temperature to ~261 K (-12 0C) by judiciously optimizing key parameters and discuss the challenges ahead in achieving room temperature operation.
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Submitted 15 November, 2022;
originally announced November 2022.
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Semiconductor nanowire metamaterial for broadband near-unity absorption
Authors:
Burak Tekcan,
Brad van Kasteren,
Sasan V. Grayli,
Daozhi Shen,
Man Chun Tam,
Dayan Ban,
Zbigniew Wasilewski,
Adam W. Tsen,
Michael E. Reimer
Abstract:
The realization of a semiconductor near-unity absorber in the infrared will provide new capabilities to transform applications in sensing, health, imaging, and quantum information science, especially where portability is required. Typically, commercially available portable single-photon detectors in the infrared are made from bulk semiconductors and have efficiencies well below unity. Here, we des…
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The realization of a semiconductor near-unity absorber in the infrared will provide new capabilities to transform applications in sensing, health, imaging, and quantum information science, especially where portability is required. Typically, commercially available portable single-photon detectors in the infrared are made from bulk semiconductors and have efficiencies well below unity. Here, we design a novel semiconductor nanowire metamaterial, and show that by carefully arranging an InGaAs nanowire array and by controlling their shape, we demonstrate near-unity absorption efficiency at room temperature. We experimentally show an average measured efficiency of 93% (simulated average efficiency of 97%) over an unprecedented wavelength range from 900 nm to 1500 nm. We further show that the near-unity absorption results from the collective response of the nanowire metamaterial, originating from both coupling into leaky resonant waveguide and transverse modes. These coupling mechanisms cause light to be absorbed directly from the top and indirectly as light scatters from one nanowire to neighbouring ones. This work leads to the possible development of a new generation of quantum detectors with unprecedented broadband near-unity absorption in the infrared, while operating near room temperature for a wider range of applications.
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Submitted 27 February, 2022;
originally announced February 2022.
